Datasheet> 器件分类 > 分立半导体> 二极管> UF2001

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UF2001: 产品描述Rectifier Diode, 1 Phase, 1 Element, 2A, 50V V(RRM), Silicon, DO-15,; 产品类别分立半导体二极管; 文件大小47KB，共4页; 制造商Vishay(威世); 官网地址http://www.vishay.com

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UF2001概述

Rectifier Diode, 1 Phase, 1 Element, 2A, 50V V(RRM), Silicon, DO-15,

UF2001规格参数

参数名称	属性值
Reach Compliance Code	unknown
其他特性	UL RECOGNIZED
应用	EFFICIENCY
外壳连接	ISOLATED
配置	SINGLE
二极管元件材料	SILICON
二极管类型	RECTIFIER DIODE
JEDEC-95代码	DO-15
JESD-30 代码	O-LALF-W2
最大非重复峰值正向电流	60 A
元件数量	1
相数	1
端子数量	2
最高工作温度	150 °C
最低工作温度	-65 °C
最大输出电流	2 A
封装主体材料	GLASS
封装形状	ROUND
封装形式	LONG FORM
认证状态	Not Qualified
最大重复峰值反向电压	50 V
最大反向恢复时间	0.05 µs
表面贴装	NO
端子形式	WIRE
端子位置	AXIAL
Base Number Matches	1

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UF2001–UF2007

Vishay Lite–On Power Semiconductor

2.0A Ultra–Fast Rectifier

Features

Diffused junction

Ultra–fast switching for high efficiency

High current capability and low forward voltage

drop

Surge overload rating to 60A peak

Low reverse leakage current

Plastic material – UL Recognition flammability

classification 94V–0

14 421

Absolute Maximum Ratings

= 25

Parameter

Repetitive peak reverse voltage

=Working peak reverse voltage

=DC Bl ki voltage

DC Blocking lt

Test Conditions

Type

UF2001

UF2002

UF2003

UF2004

UF2005

UF2006

UF2007

Symbol

RRM

RWM

Value

100

200

400

600

800

1000

–65...+150

Unit

Peak forward surge current

Average forward current

=50

Junction and storage temperature range

FSM

FAV

stg

Electrical Characteristics

= 25

Parameter

Forward voltage

Test Conditions

=2A

Type

UF2001–2003

UF2004

UF2005–2007

Symbol

thJA

Min

Typ

Max

1.3

1.7

100

Unit

K/W

Reverse current

Reverse recovery time

Diode capacitance

Thermal resistance

junction to ambient

=25

=100

=1A, I

=0.5A,

=0.25A

=4V, f=1MHz

UF2001–2004

UF2005–2007

UF2001–2004

UF2005–2007

Rev. A2, 24-Jun-98

1 (4)

UF2001–UF2007

Vishay Lite–On Power Semiconductor

Ozone Depleting Substances Policy Statement

It is the policy of

Vishay Semiconductor GmbH

1. Meet all present and future national and international statutory requirements.

2. Regularly and continuously improve the performance of our products, processes, distribution and operating

systems with respect to their impact on the health and safety of our employees and the public, as well as

their impact on the environment.

It is particular concern to control or eliminate releases of those substances into the atmosphere which are known

as ozone depleting substances ( ODSs ).

The Montreal Protocol ( 1987 ) and its London Amendments ( 1990 ) intend to severely restrict the use of ODSs and

forbid their use within the next ten years. Various national and international initiatives are pressing for an earlier ban

on these substances.

Vishay Semiconductor GmbH

has been able to use its policy of continuous improvements to eliminate the use

of ODSs listed in the following documents.

1. Annex A, B and list of transitional substances of the Montreal Protocol and the London Amendments respectively

2 . Class I and II ozone depleting substances in the Clean Air Act Amendments of 1990 by the Environmental

Protection Agency ( EPA ) in the USA

3. Council Decision 88/540/EEC and 91/690/EEC Annex A, B and C ( transitional substances ) respectively.

Vishay Semiconductor GmbH

can certify that our semiconductors are not manufactured with ozone depleting

substances and do not contain such substances.

We reserve the right to make changes to improve technical design and may do so without further notice.

Parameters can vary in different applications. All operating parameters must be validated for each customer

application by the customer. Should the buyer use Vishay-Telefunken products for any unintended or unauthorized

application, the buyer shall indemnify Vishay-Telefunken against all claims, costs, damages, and expenses, arising out

of, directly or indirectly, any claim of personal damage, injury or death associated with such unintended or

unauthorized use.

Vishay Semiconductor GmbH, P.O.B. 3535, D-74025 Heilbronn, Germany

Telephone: 49 ( 0 ) 7131 67 2831, Fax number: 49 ( 0 ) 7131 67 2423

4 (4)

Rev. A2, 24-Jun-98

UF2001相似产品对比

	UF2001	UF2002	UF2003	UF2007	UF2004	UF2006
描述	Rectifier Diode, 1 Phase, 1 Element, 2A, 50V V(RRM), Silicon, DO-15,	Rectifier Diode, 1 Phase, 1 Element, 2A, 100V V(RRM), Silicon, DO-15,	Rectifier Diode, 1 Phase, 1 Element, 2A, 200V V(RRM), Silicon, DO-15,	Rectifier Diode, 1 Phase, 1 Element, 2A, 1000V V(RRM), Silicon, DO-15,	Rectifier Diode, 1 Phase, 1 Element, 2A, 400V V(RRM), Silicon, DO-15,	Rectifier Diode, 1 Phase, 1 Element, 2A, 800V V(RRM), Silicon, DO-15,
Reach Compliance Code	unknown	unknown	unknown	unknown	unknown	unknown
其他特性	UL RECOGNIZED	UL RECOGNIZED	UL RECOGNIZED	UL RECOGNIZED	UL RECOGNIZED	UL RECOGNIZED
应用	EFFICIENCY	EFFICIENCY	EFFICIENCY	EFFICIENCY	EFFICIENCY	EFFICIENCY
外壳连接	ISOLATED	ISOLATED	ISOLATED	ISOLATED	ISOLATED	ISOLATED
配置	SINGLE	SINGLE	SINGLE	SINGLE	SINGLE	SINGLE
二极管元件材料	SILICON	SILICON	SILICON	SILICON	SILICON	SILICON
二极管类型	RECTIFIER DIODE	RECTIFIER DIODE	RECTIFIER DIODE	RECTIFIER DIODE	RECTIFIER DIODE	RECTIFIER DIODE
JEDEC-95代码	DO-15	DO-15	DO-15	DO-15	DO-15	DO-15
JESD-30 代码	O-LALF-W2	O-LALF-W2	O-LALF-W2	O-LALF-W2	O-LALF-W2	O-LALF-W2
最大非重复峰值正向电流	60 A	60 A	60 A	60 A	60 A	60 A
元件数量	1	1	1	1	1	1
相数	1	1	1	1	1	1
端子数量	2	2	2	2	2	2
最高工作温度	150 °C	150 °C	150 °C	150 °C	150 °C	150 °C
最低工作温度	-65 °C	-65 °C	-65 °C	-65 °C	-65 °C	-65 °C
最大输出电流	2 A	2 A	2 A	2 A	2 A	2 A
封装主体材料	GLASS	GLASS	GLASS	GLASS	GLASS	GLASS
封装形状	ROUND	ROUND	ROUND	ROUND	ROUND	ROUND
封装形式	LONG FORM	LONG FORM	LONG FORM	LONG FORM	LONG FORM	LONG FORM
认证状态	Not Qualified	Not Qualified	Not Qualified	Not Qualified	Not Qualified	Not Qualified
最大重复峰值反向电压	50 V	100 V	200 V	1000 V	400 V	800 V
最大反向恢复时间	0.05 µs	0.05 µs	0.05 µs	0.075 µs	0.05 µs	0.075 µs
表面贴装	NO	NO	NO	NO	NO	NO
端子形式	WIRE	WIRE	WIRE	WIRE	WIRE	WIRE
端子位置	AXIAL	AXIAL	AXIAL	AXIAL	AXIAL	AXIAL

UF2001

UF2001概述

UF2001规格参数

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