PD - 90574
REPETITIVE A ALANCHE AND dv/dt RATED
V
HEXFET TRANSISTORS
THRU-HOLE (TO-204AA/AE)
Product Summary
Part Number
IRFAE50
IRFAE50
800V, N-CHANNEL
BVDSS
800V
R
DS(on)
1.2Ω
I
D
7.1Α
The HEXFET technology is the key to International
Rectifier’s advanced line of power MOSFET transistors.
The efficient geometry and unique processing of this latest
“State of the Art” design achieves: very low on-state resis-
tance combined with high transconductance; superior re-
verse energy and diode recovery dv/dt capability.
The HEXFET transistors also feature all of the well estab-
lished advantages of MOSFETs such as voltage control,
very fast switching, ease of paralleling and temperature
stability of the electrical parameters.
They are well suited for applications such as switching
power supplies, motor controls, inverters, choppers, audio
amplifiers and high energy pulse circuits.
TO-3
Features:
n
n
n
n
n
Repetitive Avalanche Ratings
Dynamic dv/dt Rating
Hermetically Sealed
Simple Drive Requirements
Ease of Paralleling
Absolute Maximum Ratings
Parameter
ID @ VGS = 0V, TC = 25°C
ID @ VGS = 0V, TC = 100°C
I DM
PD @ TC = 25°C
VGS
EAS
IAR
EAR
dv/dt
TJ
T STG
Continuous Drain Current
Continuous Drain Current
Pulsed Drain Current
➀
Max. Power Dissipation
Linear Derating Factor
Gate-to-Source Voltage
Single Pulse Avalanche Energy
➁
Avalanche Current
➀
Repetitive Avalanche Energy
➀
Peak Diode Recovery dv/dt
➂
Operating Junction
Storage Temperature Range
Lead Temperature
Weight
For footnotes refer to the last page
7.1
4.5
28
150
1.2
±20
830
7.1
15
2.0
-55 to 150
o
Units
A
W
W/°C
V
mJ
A
mJ
V/ns
C
g
300 (0.063 in. (1.6mm) from case for 10s)
11.5(typical)
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01/24/01
IRFAE50
Electrical Characteristics
Parameter
BVDSS
∆BV
DSS/∆TJ
RDS(on)
VGS(th)
gfs
IDSS
@ Tj = 25°C (Unless Otherwise Specified)
Min
800
—
—
—
2.0
5.9
—
—
—
—
84
6.6
48
—
—
—
—
—
Typ Max Units
—
0.98
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
6.1
—
—
V
V/°C
Test Conditions
VGS = 0V, ID = 1.0mA
Reference to 25°C, ID = 1.0mA
VGS = 10V, ID = 4.5A➃
VGS = 10V, ID = 7.1A
➃
VDS = VGS, ID = 250µA
VDS > 15V, IDS = 4.5A
➃
VDS=640V ,VGS = 0V
VDS = 640V
VGS = 0V, TJ = 125°C
VGS = 20V
VGS = -20V
VGS =10V, ID=7.1A
VDS = 400V
VDD = 400V, ID = 7.1A,
RG =2.35Ω
Drain-to-Source Breakdown Voltage
Temperature Coefficient of Breakdown
Voltage
Static Drain-to-Source On-State
Resistance
Gate Threshold Voltage
Forward Transconductance
Zero Gate Voltage Drain Current
IGSS
I GSS
Qg
Qgs
Qgd
td
(on)
tr
td
(off)
tf
LS + LD
Gate-to-Source Leakage Forward
Gate-to-Source Leakage Reverse
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain (‘Miller’) Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Total Inductance
100
-100
190
15
110
32
68
78
24
—
nA
nC
ns
nH
Ciss
Coss
Crss
Input Capacitance
Output Capacitance
Reverse
—
—
2800
400
200
—
pF
Source-Drain Diode Ratings and Characteristics
Parameter
IS
ISM
VSD
t rr
QRR
ton
Continuous Source Current (Body Diode)
Pulse Source Current (Body Diode)
➀
Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge
Forward Turn-On Time
Min Typ Max Units
—
—
—
—
—
—
—
—
—
—
7.1
28
1.8
1600
13
A
V
nS
µC
Intrinsic turn-on time is negligible. Turn-on speed is substantially controlled by LS + LD.
Thermal Resistance
Parameter
RthJC
R thJA
Junction to Case
Junction to Ambient
Min Typ Max Units
—
—
—
—
0.83
30
°C/W
For footnotes refer to the last page
2
Ω
1.2
Ω
1.4
4.0
V
—S ( )
25
µA
250
Measured from drain lead (6mm/0.25in. from
package) to source lead (6mm/0.25in. from
package)
VGS = 0V, VDS = 25V
f = 1.0MHz
Test Conditions
T
j
= 25°C, IS =7.1A, VGS = 0V
➃
Tj = 25°C, IF =7.1A, di/dt
≤
100A/µs
VDD
≤
50V
➃
Test Conditions
Typical socket mount
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IRFAE50
Fig 1.
Typical Output Characteristics
Fig 2.
Typical Output Characteristics
Fig 3.
Typical Transfer Characteristics
Fig 4.
Normalized On-Resistance
Vs. Temperature
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IRFAE50
13 a& b
Fig 5.
Typical Capacitance Vs.
Drain-to-Source Voltage
Fig 6.
Typical Gate Charge Vs.
Gate-to-Source Voltage
Fig 7.
Typical Source-Drain Diode
Forward Voltage
Fig 8.
Maximum Safe Operating Area
4
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IRFAE50
V
DS
V
GS
R
G
R
D
D.U.T.
+
-
V
DD
10V
Pulse Width
≤ 1
µs
Duty Factor
≤ 0.1 %
Fig 10a.
Switching Time Test Circuit
V
DS
90%
10%
V
GS
Fig 9.
Maximum Drain Current Vs.
Case Temperature
t
d(on)
t
r
t
d(off)
t
f
Fig 10b.
Switching Time Waveforms
Fig 11.
Maximum Effective Transient Thermal Impedance, Junction-to-Case
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