PTVA120501EA
Thermally-Enhanced High Power RF LDMOS FET
50 W, 50 V, 1200 – 1400 MHz
Description
The PTVA120501EA LDMOS FET is designed for use in power ampli-
fier applications in the 1200 to 1400 MHz frequency band. Features
include high gain and thermally-enhanced package with bolt-down
flange. Manufactured with Infineon's advanced LDMOS process, this
device provides excellent thermal performance and superior reliability.
PTVA120501EA
Package H-36265-2
Features
Power Sweep, Pulsed RF
V
DD
= 50 V, I
DQ
= 50 mA, T
CASE
= 25°C,
300
μs
pulse width, 10% duty cycle
60
55
Efficiency
•
•
•
70
60
50
Broadband input matching
High gain and efficiency
Typical Pulsed CW performance, 1200 – 1400MHz,
50 V, 300 µs pulse width, 10% duty cycle, class AB
- Output power at P
1dB
= 54 W
- Efficiency = 55%
- Gain = 16 dB
Integrated ESD protection
Low thermal resistance
Pb-free and RoHS compliant
Capable of withstanding a
10:1 load
mismatch
(all phase angles) at 50 W peak under RF pulse,
300 µS, 10% duty cycle.
Drain Efficiency (%)
P
OUT
(dBm)
50
45
40
35
30
18
22
26
30
34
Output Power
•
•
•
•
40
30
20
10
38
1200 MHz
1300 MHz
1400 MHz
a120501ea_g1-1
P
IN
(dBm)
RF Characteristics
Pulsed RF Performance
(tested in Infineon test fixture)
V
DD
= 50 V, I
DQ
= 50 mA, P
OUT
= 50 W, ƒ
1
= 1200 MHz, ƒ
2
= 1300 MHz,
ƒ
3
= 1400 MHz, 300 µs pulse width, 10% duty
cycle
Characteristic
Gain
Drain Efficiency
Return Loss
Symbol
G
ps
Min
16.5
46
—
Typ
17
50
–10
Max
—
—
–7
Unit
dB
%
dB
η
D
IRL
All published data at T
CASE
= 25°C unless otherwise indicated
ESD:
Electrostatic discharge sensitive device—observe handling precautions!
Data Sheet
1 of 10
Rev. 02, 2013-09-24
PTVA120501EA
RF Characteristics
Typical RF Performance
(not subject to production test, verified by design/characterization in Infineon test fixture)
V
DD
= 50 V, I
DQ
= 50 mA, Input signal (t
r
= 7 ns, t
f
= 8 ns), 300 µs pulse width,
10%
duty cycle, class AB test
P
1dB
Mode of Op-
eration
Pulsed RF
Pulsed RF
Pulsed RF
ƒ
(MHz)
1200
1300
1400
IRL
(dB)
–8
–10
–8
Gain
(dB)
16
16
16
Eff
(%)
56
57
55
P
OUT
(W)
60
60
54
Gain
(dB)
14
14
14
P
3dB
Eff
(%)
58
58
57
P
OUT
(W)
78
78
57
Max
P
droop (pulse)
dB @ 50 W
0.20
0.20
0.15
t
r (ns)
@
50 W*
5
5
5
t
f (ns)
@
50 W*
<2
<2
<2
* Note = t
r
and t
f
are defined as
Δ
between input and output rise and fall times
Typical RF Performance
(not subject to production test, verified by design/characterization in Infineon test fixture)
V
DD
= 50 V, I
DQ
= 50 mA, 30 ms pulse width, 33% duty cycle, class AB test
Mode of Op-
eration
Pulsed RF
Pulsed RF
Pulsed RF
ƒ
(MHz)
1200
1300
1400
P
1dB
Gain
(dB)
16
16
16
Eff
(%)
57
56
49
P
OUT
(W)
57
55
50
Gain
(dB)
14
14
14
P
3dB
Eff
(%)
59
58
50
P
OUT
(W)
75
75
55
P
droop (pulse)
dB @ 50 W
0.3
0.3
0.2
DC Characteristics
Characteristic
Drain-Source Breakdown Voltage
Drain Leakage Current
Conditions
V
GS
= 0 V, I
DS
= 10 mA
V
DS
= 50 V, V
GS
= 0 V
V
DS
= 105 V, V
GS
= 0 V
Symbol
V(
BR)DSS
I
DSS
I
DSS
R
DS(on)
V
GS
I
GSS
Min
105
—
—
—
3.0
—
Typ
—
—
—
0.4
3.5
—
Max
—
1
10
—
4.0
1
Unit
V
µA
µA
Ω
V
µA
On-State Resistance
Operating Gate Voltage
Gate Leakage Current
V
GS
= 10 V, V
DS
= 0.1 V
V
DS
= 50 V, I
DQ
= 50 mA
V
GS
= 10 V, V
DS
= 0 V
Data Sheet
2 of 10
Rev. 02, 2013-09-24
PTVA120501EA
Maximum Ratings
Parameter
Drain-Source Voltage
Gate-Source Voltage
Junction Temperature
Storage Temperature Range
Thermal Resistance
(T
CASE
= 70°C, 50 W CW)
Symbol
V
DSS
V
GS
T
J
T
STG
R
θJC
Value
105
–6 to +12
200
–65 to +150
1.37
Unit
V
V
°C
°C
°C/W
Ordering Information
Type and Version
PTVA120501EA V1
PTVA120501EA V1 R250
Order Code
PTVA120501EAV1XWSA1
PTVA120501EAV1R250XTMA1
Package Description
H-36265-2, bolt-down
H-36265-2, bolt-down
Shipping
Tray
Tape & Reel, 250 pcs
Typical Performance
(data taken in a production test fixture)
Pulsed CW Performance
V
DD
= 50 V, I
DQ
= 50 mA
Small Signal CW Performance
Gain & Input Return Loss
V
DD
= 50 V, I
DQ
= 1.5 A
70
19
Gain
19
18
-1
-5
-9
-13
-17
-21
1550
Efficiency (%)
60
Gain
17
Gain (dB)
17
16
15
50
40
30
1400 MHz
1200 MHz
15
13
11
9
950
1050
1150
1250
1350
14
Efficiency
20
10
48
IRL
13
36
38
40
42
1300 MHz
a120501ea_gcw-1
44
46
a120501ea_gcw-2
1450
Output Power (dBm)
Frequency (MHz)
Data Sheet
3 of 10
Rev. 02, 2013-09-24
Input Return Loss (dB)
Power Gain (dB)
PTVA120501EA
Typical Performance
(cont.)
Power Sweep, Pulsed RF
V
DD
= 50 V, I
DQ
= 50 mA, T
CASE
= 25°C,
300
μs
pulse width, 10% duty cycle
60
55
Efficiency
Power Sweep, Pulsed RF
V
DD
= 50 V, I
DQ
= 50 mA, T
CASE
= 25°C,
300
μs
pulse width, 10% duty cycle
70
60
50
19
18
Gain
P
OUT
(dBm)
Gain (dB)
50
45
40
35
30
18
22
26
30
34
Output Power
Drain Efficiency (%)
17
16
1200 MHz
40
30
20
10
38
1200 MHz
1300 MHz
1400 MHz
a120501ea_g1-1
15
14
18
22
1300 MHz
1400 MHz
a120501ea_g1-2
26
30
34
38
P
IN
(dBm)
P
IN
(dBm)
Power Sweep, Pulsed RF
V
DD
= 50 V, I
DQ
= 50 mA, P
OUT
= 50 W,
300
μs
pulse width, 10% duty cycle
18.0
Gain
Power Sweep, Pulsed RF
V
DD
= 50 V, I
DQ
= 50 mA, P
OUT
= 50 W,
300
μs
pulse width, 10% duty cycle
58
0.25
-5
-10
-15
-20
IRL
Drain Efficiency (%)
17.8
56
Power Droop (dB)
0.20
0.15
0.10
0.05
0.00
1150
Power Droop
Gain (dB)
17.6
54
17.4
Efficiency
52
-25
-30
1450
17.2
1150
a120501ea_g1-3
1200
1250
1300
1350
1400
50
1450
a120501ea_g1-4
1200
1250
1300
1350
1400
Frequency (MHz)
Frequency (MHz)
Data Sheet
4 of 10
Rev. 02, 2013-09-24
IRL (dB)
PTVA120501EA
Typical Performance
(cont.)
Power Sweep, Pulsed RF
V
DD
= 50 V, I
DQ
= 50 mA, T
CASE
= 25°C,
16 ms pulse width, 50% duty cycle
60
55
Efficiency
Power Sweep, Pulsed RF
V
DD
= 50 V, I
DQ
= 50 mA, T
CASE
= 25°C,
16 ms pulse width, 50% duty cycle
70
19
Drain Efficiency (%)
60
50
18
Gain
P
OUT
(dBm)
Gain (dB)
50
45
40
35
30
18
22
26
30
34
Output Power
17
16
1200 MHz
40
30
20
10
1200 MHz
1300 MHz
1400 MHz
a120501ea_g4-1
15
14
18
22
1300 MHz
1400 MHz
a120501ea_g4-2
38
26
30
34
38
P
IN
(dBm)
P
IN
(dBm)
Power Sweep, Pulsed RF
V
DD
= 50 V, I
DQ
= 50 mA, P
OUT
= 50 W,
16 ms pulse width, 50% duty cycle
17.4
Gain
Power Sweep, Pulsed RF
V
DD
= 50 V, I
DQ
= 50 mA, P
OUT
= 50 W,
16 ms pulse width, 50% duty cycle
60
0.25
Power Droop
-5
-10
-15
-20
IRL
17.2
58
Drain Efficiency (%)
Power Droop (dB)
0.20
0.15
0.10
0.05
0.00
1150
Gain (dB)
17.0
56
16.8
Efficiency
54
-25
-30
1450
16.6
1150
a120501ea_g4-3
1200
1250
1300
1350
1400
52
1450
a120501ea_g4-4
1200
1250
1300
1350
1400
Frequency (MHz)
Frequency (MHz)
Data Sheet
5 of 10
Rev. 02, 2013-09-24
IRL (dB)
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