IC,EPROM,32KX8,CMOS,DIP,28PIN,CERAMIC
| 参数名称 | 属性值 |
| 是否Rohs认证 | 不符合 |
| 包装说明 | DIP, DIP28,.6 |
| Reach Compliance Code | unknown |
| 最长访问时间 | 70 ns |
| I/O 类型 | COMMON |
| JESD-30 代码 | R-XDIP-T28 |
| JESD-609代码 | e0 |
| 内存密度 | 262144 bit |
| 内存集成电路类型 | UVPROM |
| 内存宽度 | 8 |
| 端子数量 | 28 |
| 字数 | 32768 words |
| 字数代码 | 32000 |
| 最高工作温度 | 70 °C |
| 最低工作温度 | |
| 组织 | 32KX8 |
| 输出特性 | 3-STATE |
| 封装主体材料 | CERAMIC |
| 封装代码 | DIP |
| 封装等效代码 | DIP28,.6 |
| 封装形状 | RECTANGULAR |
| 封装形式 | IN-LINE |
| 电源 | 5 V |
| 编程电压 | 12.75 V |
| 认证状态 | Not Qualified |
| 标称供电电压 (Vsup) | 5 V |
| 表面贴装 | NO |
| 技术 | CMOS |
| 温度等级 | COMMERCIAL |
| 端子面层 | Tin/Lead (Sn/Pb) |
| 端子形式 | THROUGH-HOLE |
| 端子节距 | 2.54 mm |
| 端子位置 | DUAL |
| Base Number Matches | 1 |
| NMC27C256CQ70 | NMC27C256CQ55 | NMC27C256CQ90 | NM27C256V150 | NM27C256VE150 | NM27C256VE200 | |
|---|---|---|---|---|---|---|
| 描述 | IC,EPROM,32KX8,CMOS,DIP,28PIN,CERAMIC | IC,EPROM,32KX8,CMOS,DIP,28PIN,CERAMIC | IC,EPROM,32KX8,CMOS,DIP,28PIN,CERAMIC | 32K X 8 OTPROM, 150 ns, PQCC32 | 32K X 8 OTPROM, 150 ns, PQCC32 | 32K X 8 OTPROM, 200 ns, PQCC32 |
| 是否Rohs认证 | 不符合 | 不符合 | 不符合 | 不符合 | 不符合 | 不符合 |
| 包装说明 | DIP, DIP28,.6 | DIP, DIP28,.6 | DIP, DIP28,.6 | QCCJ, LDCC32,.5X.6 | QCCJ, LDCC32,.5X.6 | QCCJ, LDCC32,.5X.6 |
| Reach Compliance Code | unknown | unknown | unknown | unknown | unknown | unknown |
| 最长访问时间 | 70 ns | 55 ns | 90 ns | 150 ns | 150 ns | 200 ns |
| I/O 类型 | COMMON | COMMON | COMMON | COMMON | COMMON | COMMON |
| JESD-30 代码 | R-XDIP-T28 | R-XDIP-T28 | R-XDIP-T28 | R-PQCC-J32 | R-PQCC-J32 | R-PQCC-J32 |
| JESD-609代码 | e0 | e0 | e0 | e0 | e0 | e0 |
| 内存密度 | 262144 bit | 262144 bit | 262144 bit | 262144 bit | 262144 bit | 262144 bit |
| 内存集成电路类型 | UVPROM | UVPROM | UVPROM | OTP ROM | OTP ROM | OTP ROM |
| 内存宽度 | 8 | 8 | 8 | 8 | 8 | 8 |
| 端子数量 | 28 | 28 | 28 | 32 | 32 | 32 |
| 字数 | 32768 words | 32768 words | 32768 words | 32768 words | 32768 words | 32768 words |
| 字数代码 | 32000 | 32000 | 32000 | 32000 | 32000 | 32000 |
| 最高工作温度 | 70 °C | 70 °C | 70 °C | 70 °C | 85 °C | 85 °C |
| 组织 | 32KX8 | 32KX8 | 32KX8 | 32KX8 | 32KX8 | 32KX8 |
| 输出特性 | 3-STATE | 3-STATE | 3-STATE | 3-STATE | 3-STATE | 3-STATE |
| 封装主体材料 | CERAMIC | CERAMIC | CERAMIC | PLASTIC/EPOXY | PLASTIC/EPOXY | PLASTIC/EPOXY |
| 封装代码 | DIP | DIP | DIP | QCCJ | QCCJ | QCCJ |
| 封装等效代码 | DIP28,.6 | DIP28,.6 | DIP28,.6 | LDCC32,.5X.6 | LDCC32,.5X.6 | LDCC32,.5X.6 |
| 封装形状 | RECTANGULAR | RECTANGULAR | RECTANGULAR | RECTANGULAR | RECTANGULAR | RECTANGULAR |
| 封装形式 | IN-LINE | IN-LINE | IN-LINE | CHIP CARRIER | CHIP CARRIER | CHIP CARRIER |
| 电源 | 5 V | 5 V | 5 V | 5 V | 5 V | 5 V |
| 编程电压 | 12.75 V | 12.75 V | 12.75 V | 12.75 V | 12.75 V | 12.75 V |
| 认证状态 | Not Qualified | Not Qualified | Not Qualified | Not Qualified | Not Qualified | Not Qualified |
| 标称供电电压 (Vsup) | 5 V | 5 V | 5 V | 5 V | 5 V | 5 V |
| 表面贴装 | NO | NO | NO | YES | YES | YES |
| 技术 | CMOS | CMOS | CMOS | CMOS | CMOS | CMOS |
| 温度等级 | COMMERCIAL | COMMERCIAL | COMMERCIAL | COMMERCIAL | INDUSTRIAL | INDUSTRIAL |
| 端子面层 | Tin/Lead (Sn/Pb) | Tin/Lead (Sn/Pb) | Tin/Lead (Sn/Pb) | Tin/Lead (Sn/Pb) | Tin/Lead (Sn/Pb) | Tin/Lead (Sn/Pb) |
| 端子形式 | THROUGH-HOLE | THROUGH-HOLE | THROUGH-HOLE | J BEND | J BEND | J BEND |
| 端子节距 | 2.54 mm | 2.54 mm | 2.54 mm | 1.27 mm | 1.27 mm | 1.27 mm |
| 端子位置 | DUAL | DUAL | DUAL | QUAD | QUAD | QUAD |
| Base Number Matches | 1 | 1 | 1 | 1 | - | - |
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