Power Field-Effect Transistor, 30A I(D), 100V, 0.065ohm, 2-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, HERMETIC SEALED, METAL, SIP-6
| 参数名称 | 属性值 |
| 是否Rohs认证 | 不符合 |
| 包装说明 | FLANGE MOUNT, R-MSFM-P6 |
| 针数 | 6 |
| Reach Compliance Code | unknown |
| ECCN代码 | EAR99 |
| 其他特性 | HIGH RELIABILITY |
| 外壳连接 | ISOLATED |
| 配置 | SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE |
| 最小漏源击穿电压 | 100 V |
| 最大漏极电流 (Abs) (ID) | 30 A |
| 最大漏极电流 (ID) | 30 A |
| 最大漏源导通电阻 | 0.065 Ω |
| FET 技术 | METAL-OXIDE SEMICONDUCTOR |
| JESD-30 代码 | R-MSFM-P6 |
| 湿度敏感等级 | 1 |
| 元件数量 | 2 |
| 端子数量 | 6 |
| 工作模式 | ENHANCEMENT MODE |
| 最高工作温度 | 150 °C |
| 封装主体材料 | METAL |
| 封装形状 | RECTANGULAR |
| 封装形式 | FLANGE MOUNT |
| 峰值回流温度(摄氏度) | 225 |
| 极性/信道类型 | N-CHANNEL |
| 最大功率耗散 (Abs) | 125 W |
| 最大脉冲漏极电流 (IDM) | 140 A |
| 认证状态 | Not Qualified |
| 表面贴装 | NO |
| 端子形式 | PIN/PEG |
| 端子位置 | SINGLE |
| 处于峰值回流温度下的最长时间 | NOT SPECIFIED |
| 晶体管应用 | SWITCHING |
| 晶体管元件材料 | SILICON |
| Base Number Matches | 1 |

| OM6214SS | OM6214SST | OM6214SSV | OM6215SS | OM6215SSV | OM6216SS | OM6217SS | OM6217SST | OM6217SSV | |
|---|---|---|---|---|---|---|---|---|---|
| 描述 | Power Field-Effect Transistor, 30A I(D), 100V, 0.065ohm, 2-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, HERMETIC SEALED, METAL, SIP-6 | Power Field-Effect Transistor, 30A I(D), 100V, 0.065ohm, 2-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, HERMETIC SEALED, SIP-6 | Power Field-Effect Transistor, 30A I(D), 100V, 0.065ohm, 2-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, HERMETIC SEALED, SIP-6 | Power Field-Effect Transistor, 25A I(D), 200V, 0.095ohm, 2-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, HERMETIC SEALED, METAL, SIP-6 | Power Field-Effect Transistor, 25A I(D), 200V, 0.095ohm, 2-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, HERMETIC SEALED, SIP-6 | Power Field-Effect Transistor, 15A I(D), 400V, 0.3ohm, 2-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, HERMETIC SEALED, METAL, SIP-6 | Power Field-Effect Transistor, 13A I(D), 500V, 0.4ohm, 2-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, HERMETIC SEALED, METAL, SIP-6 | Power Field-Effect Transistor, 13A I(D), 500V, 0.4ohm, 2-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, HERMETIC SEALED, SIP-6 | Power Field-Effect Transistor, 13A I(D), 500V, 0.4ohm, 2-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, HERMETIC SEALED, SIP-6 |
| 是否Rohs认证 | 不符合 | 不符合 | 不符合 | 不符合 | 不符合 | 不符合 | 不符合 | 不符合 | 不符合 |
| 包装说明 | FLANGE MOUNT, R-MSFM-P6 | FLANGE MOUNT, R-MSFM-P6 | FLANGE MOUNT, R-MSFM-P6 | FLANGE MOUNT, R-MSFM-P6 | FLANGE MOUNT, R-MSFM-P6 | FLANGE MOUNT, R-MSFM-P6 | FLANGE MOUNT, R-MSFM-P6 | FLANGE MOUNT, R-MSFM-P6 | FLANGE MOUNT, R-MSFM-P6 |
| Reach Compliance Code | unknown | compliant | compliant | unknown | compliant | unknown | unknown | compliant | compliant |
| 其他特性 | HIGH RELIABILITY | HIGH RELIABILITY | HIGH RELIABILITY | HIGH RELIABILITY | HIGH RELIABILITY | HIGH RELIABILITY | HIGH RELIABILITY | HIGH RELIABILITY | HIGH RELIABILITY |
| 外壳连接 | ISOLATED | ISOLATED | ISOLATED | ISOLATED | ISOLATED | ISOLATED | ISOLATED | ISOLATED | ISOLATED |
| 配置 | SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE | SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE | SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE | SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE | SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE | SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE | SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE | SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE | SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE |
| 最小漏源击穿电压 | 100 V | 100 V | 100 V | 200 V | 200 V | 400 V | 500 V | 500 V | 500 V |
| 最大漏极电流 (ID) | 30 A | 30 A | 30 A | 25 A | 25 A | 15 A | 13 A | 13 A | 13 A |
| 最大漏源导通电阻 | 0.065 Ω | 0.065 Ω | 0.065 Ω | 0.095 Ω | 0.095 Ω | 0.3 Ω | 0.4 Ω | 0.4 Ω | 0.4 Ω |
| FET 技术 | METAL-OXIDE SEMICONDUCTOR | METAL-OXIDE SEMICONDUCTOR | METAL-OXIDE SEMICONDUCTOR | METAL-OXIDE SEMICONDUCTOR | METAL-OXIDE SEMICONDUCTOR | METAL-OXIDE SEMICONDUCTOR | METAL-OXIDE SEMICONDUCTOR | METAL-OXIDE SEMICONDUCTOR | METAL-OXIDE SEMICONDUCTOR |
| JESD-30 代码 | R-MSFM-P6 | R-MSFM-P6 | R-MSFM-P6 | R-MSFM-P6 | R-MSFM-P6 | R-MSFM-P6 | R-MSFM-P6 | R-MSFM-P6 | R-MSFM-P6 |
| 元件数量 | 2 | 2 | 2 | 2 | 2 | 2 | 2 | 2 | 2 |
| 端子数量 | 6 | 6 | 6 | 6 | 6 | 6 | 6 | 6 | 6 |
| 工作模式 | ENHANCEMENT MODE | ENHANCEMENT MODE | ENHANCEMENT MODE | ENHANCEMENT MODE | ENHANCEMENT MODE | ENHANCEMENT MODE | ENHANCEMENT MODE | ENHANCEMENT MODE | ENHANCEMENT MODE |
| 最高工作温度 | 150 °C | 150 °C | 150 °C | 150 °C | 150 °C | 150 °C | 150 °C | 150 °C | 150 °C |
| 封装主体材料 | METAL | METAL | METAL | METAL | METAL | METAL | METAL | METAL | METAL |
| 封装形状 | RECTANGULAR | RECTANGULAR | RECTANGULAR | RECTANGULAR | RECTANGULAR | RECTANGULAR | RECTANGULAR | RECTANGULAR | RECTANGULAR |
| 封装形式 | FLANGE MOUNT | FLANGE MOUNT | FLANGE MOUNT | FLANGE MOUNT | FLANGE MOUNT | FLANGE MOUNT | FLANGE MOUNT | FLANGE MOUNT | FLANGE MOUNT |
| 峰值回流温度(摄氏度) | 225 | NOT SPECIFIED | NOT SPECIFIED | 225 | NOT SPECIFIED | 225 | 225 | NOT SPECIFIED | NOT SPECIFIED |
| 极性/信道类型 | N-CHANNEL | N-CHANNEL | N-CHANNEL | N-CHANNEL | N-CHANNEL | N-CHANNEL | N-CHANNEL | N-CHANNEL | N-CHANNEL |
| 最大脉冲漏极电流 (IDM) | 140 A | 140 A | 140 A | 100 A | 100 A | 60 A | 52 A | 52 A | 52 A |
| 认证状态 | Not Qualified | Not Qualified | Not Qualified | Not Qualified | Not Qualified | Not Qualified | Not Qualified | Not Qualified | Not Qualified |
| 表面贴装 | NO | NO | NO | NO | NO | NO | NO | NO | NO |
| 端子形式 | PIN/PEG | PIN/PEG | PIN/PEG | PIN/PEG | PIN/PEG | PIN/PEG | PIN/PEG | PIN/PEG | PIN/PEG |
| 端子位置 | SINGLE | SINGLE | SINGLE | SINGLE | SINGLE | SINGLE | SINGLE | SINGLE | SINGLE |
| 处于峰值回流温度下的最长时间 | NOT SPECIFIED | NOT SPECIFIED | NOT SPECIFIED | NOT SPECIFIED | NOT SPECIFIED | NOT SPECIFIED | NOT SPECIFIED | NOT SPECIFIED | NOT SPECIFIED |
| 晶体管应用 | SWITCHING | SWITCHING | SWITCHING | SWITCHING | SWITCHING | SWITCHING | SWITCHING | SWITCHING | SWITCHING |
| 晶体管元件材料 | SILICON | SILICON | SILICON | SILICON | SILICON | SILICON | SILICON | SILICON | SILICON |
| 针数 | 6 | - | - | 6 | 6 | 6 | 6 | 6 | 6 |
| ECCN代码 | EAR99 | EAR99 | EAR99 | EAR99 | EAR99 | - | - | - | - |
| 是否无铅 | - | 含铅 | 含铅 | - | 含铅 | - | - | 含铅 | 含铅 |
| JESD-609代码 | - | e0 | e0 | e0 | e0 | - | - | e0 | e0 |
| 端子面层 | - | TIN LEAD | TIN LEAD | TIN LEAD | TIN LEAD | - | - | TIN LEAD | TIN LEAD |
| 厂商名称 | - | - | - | International Rectifier ( Infineon ) | International Rectifier ( Infineon ) | International Rectifier ( Infineon ) | International Rectifier ( Infineon ) | International Rectifier ( Infineon ) | International Rectifier ( Infineon ) |
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