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OM6214SS

产品描述Power Field-Effect Transistor, 30A I(D), 100V, 0.065ohm, 2-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, HERMETIC SEALED, METAL, SIP-6
产品类别分立半导体    晶体管   
文件大小43KB,共4页
制造商International Rectifier ( Infineon )
官网地址http://www.irf.com/
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OM6214SS概述

Power Field-Effect Transistor, 30A I(D), 100V, 0.065ohm, 2-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, HERMETIC SEALED, METAL, SIP-6

OM6214SS规格参数

参数名称属性值
是否Rohs认证不符合
包装说明FLANGE MOUNT, R-MSFM-P6
针数6
Reach Compliance Codeunknown
ECCN代码EAR99
其他特性HIGH RELIABILITY
外壳连接ISOLATED
配置SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE
最小漏源击穿电压100 V
最大漏极电流 (Abs) (ID)30 A
最大漏极电流 (ID)30 A
最大漏源导通电阻0.065 Ω
FET 技术METAL-OXIDE SEMICONDUCTOR
JESD-30 代码R-MSFM-P6
湿度敏感等级1
元件数量2
端子数量6
工作模式ENHANCEMENT MODE
最高工作温度150 °C
封装主体材料METAL
封装形状RECTANGULAR
封装形式FLANGE MOUNT
峰值回流温度(摄氏度)225
极性/信道类型N-CHANNEL
最大功率耗散 (Abs)125 W
最大脉冲漏极电流 (IDM)140 A
认证状态Not Qualified
表面贴装NO
端子形式PIN/PEG
端子位置SINGLE
处于峰值回流温度下的最长时间NOT SPECIFIED
晶体管应用SWITCHING
晶体管元件材料SILICON
Base Number Matches1

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OM6214SS OM6216SS
OM6215SS OM6217SS
TWO POWER MOSFETS IN HERMETIC
ISOLATED SIP PACKAGE
100V Thru 500V, Dual High Current,
N-Channel MOSFETs
FEATURES
Two Isolated MOSFETs In A Hermetic Metal Package
Fast Switching, Low Drive Current
Ease of Paralleling For Added Power
Low R
DS(on)
Available Screened To MIL-S-19500, TX, TXV And S Levels
DESCRIPTION
This series of hermetically packaged products feature the latest advanced MOSFET
and packaging technology. They are ideally suited for Military requirements where
small size, high performance and high reliability are required, and in applications
such as switching power supplies, motor controls, inverters, choppers, audio
amplifiers and high energy pulse circuits.
MAXIMUM RATINGS
PART NUMBER
OM6214SS
OM6215SS
OM6216SS
OM6217SS
V
DS
100V
200V
400V
500V
R
DS(ON)
.065
.095
.3
.4
I
D(MAX)
30A
25A
15A
13A
3.1
SCHEMATIC
CONNECTION DIAGRAM
FET#1
D
S
G
G
FET#2
S
D
4 11 R4
Supersedes 1 07 R3
3.1 - 109

OM6214SS相似产品对比

OM6214SS OM6214SST OM6214SSV OM6215SS OM6215SSV OM6216SS OM6217SS OM6217SST OM6217SSV
描述 Power Field-Effect Transistor, 30A I(D), 100V, 0.065ohm, 2-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, HERMETIC SEALED, METAL, SIP-6 Power Field-Effect Transistor, 30A I(D), 100V, 0.065ohm, 2-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, HERMETIC SEALED, SIP-6 Power Field-Effect Transistor, 30A I(D), 100V, 0.065ohm, 2-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, HERMETIC SEALED, SIP-6 Power Field-Effect Transistor, 25A I(D), 200V, 0.095ohm, 2-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, HERMETIC SEALED, METAL, SIP-6 Power Field-Effect Transistor, 25A I(D), 200V, 0.095ohm, 2-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, HERMETIC SEALED, SIP-6 Power Field-Effect Transistor, 15A I(D), 400V, 0.3ohm, 2-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, HERMETIC SEALED, METAL, SIP-6 Power Field-Effect Transistor, 13A I(D), 500V, 0.4ohm, 2-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, HERMETIC SEALED, METAL, SIP-6 Power Field-Effect Transistor, 13A I(D), 500V, 0.4ohm, 2-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, HERMETIC SEALED, SIP-6 Power Field-Effect Transistor, 13A I(D), 500V, 0.4ohm, 2-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, HERMETIC SEALED, SIP-6
是否Rohs认证 不符合 不符合 不符合 不符合 不符合 不符合 不符合 不符合 不符合
包装说明 FLANGE MOUNT, R-MSFM-P6 FLANGE MOUNT, R-MSFM-P6 FLANGE MOUNT, R-MSFM-P6 FLANGE MOUNT, R-MSFM-P6 FLANGE MOUNT, R-MSFM-P6 FLANGE MOUNT, R-MSFM-P6 FLANGE MOUNT, R-MSFM-P6 FLANGE MOUNT, R-MSFM-P6 FLANGE MOUNT, R-MSFM-P6
Reach Compliance Code unknown compliant compliant unknown compliant unknown unknown compliant compliant
其他特性 HIGH RELIABILITY HIGH RELIABILITY HIGH RELIABILITY HIGH RELIABILITY HIGH RELIABILITY HIGH RELIABILITY HIGH RELIABILITY HIGH RELIABILITY HIGH RELIABILITY
外壳连接 ISOLATED ISOLATED ISOLATED ISOLATED ISOLATED ISOLATED ISOLATED ISOLATED ISOLATED
配置 SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE
最小漏源击穿电压 100 V 100 V 100 V 200 V 200 V 400 V 500 V 500 V 500 V
最大漏极电流 (ID) 30 A 30 A 30 A 25 A 25 A 15 A 13 A 13 A 13 A
最大漏源导通电阻 0.065 Ω 0.065 Ω 0.065 Ω 0.095 Ω 0.095 Ω 0.3 Ω 0.4 Ω 0.4 Ω 0.4 Ω
FET 技术 METAL-OXIDE SEMICONDUCTOR METAL-OXIDE SEMICONDUCTOR METAL-OXIDE SEMICONDUCTOR METAL-OXIDE SEMICONDUCTOR METAL-OXIDE SEMICONDUCTOR METAL-OXIDE SEMICONDUCTOR METAL-OXIDE SEMICONDUCTOR METAL-OXIDE SEMICONDUCTOR METAL-OXIDE SEMICONDUCTOR
JESD-30 代码 R-MSFM-P6 R-MSFM-P6 R-MSFM-P6 R-MSFM-P6 R-MSFM-P6 R-MSFM-P6 R-MSFM-P6 R-MSFM-P6 R-MSFM-P6
元件数量 2 2 2 2 2 2 2 2 2
端子数量 6 6 6 6 6 6 6 6 6
工作模式 ENHANCEMENT MODE ENHANCEMENT MODE ENHANCEMENT MODE ENHANCEMENT MODE ENHANCEMENT MODE ENHANCEMENT MODE ENHANCEMENT MODE ENHANCEMENT MODE ENHANCEMENT MODE
最高工作温度 150 °C 150 °C 150 °C 150 °C 150 °C 150 °C 150 °C 150 °C 150 °C
封装主体材料 METAL METAL METAL METAL METAL METAL METAL METAL METAL
封装形状 RECTANGULAR RECTANGULAR RECTANGULAR RECTANGULAR RECTANGULAR RECTANGULAR RECTANGULAR RECTANGULAR RECTANGULAR
封装形式 FLANGE MOUNT FLANGE MOUNT FLANGE MOUNT FLANGE MOUNT FLANGE MOUNT FLANGE MOUNT FLANGE MOUNT FLANGE MOUNT FLANGE MOUNT
峰值回流温度(摄氏度) 225 NOT SPECIFIED NOT SPECIFIED 225 NOT SPECIFIED 225 225 NOT SPECIFIED NOT SPECIFIED
极性/信道类型 N-CHANNEL N-CHANNEL N-CHANNEL N-CHANNEL N-CHANNEL N-CHANNEL N-CHANNEL N-CHANNEL N-CHANNEL
最大脉冲漏极电流 (IDM) 140 A 140 A 140 A 100 A 100 A 60 A 52 A 52 A 52 A
认证状态 Not Qualified Not Qualified Not Qualified Not Qualified Not Qualified Not Qualified Not Qualified Not Qualified Not Qualified
表面贴装 NO NO NO NO NO NO NO NO NO
端子形式 PIN/PEG PIN/PEG PIN/PEG PIN/PEG PIN/PEG PIN/PEG PIN/PEG PIN/PEG PIN/PEG
端子位置 SINGLE SINGLE SINGLE SINGLE SINGLE SINGLE SINGLE SINGLE SINGLE
处于峰值回流温度下的最长时间 NOT SPECIFIED NOT SPECIFIED NOT SPECIFIED NOT SPECIFIED NOT SPECIFIED NOT SPECIFIED NOT SPECIFIED NOT SPECIFIED NOT SPECIFIED
晶体管应用 SWITCHING SWITCHING SWITCHING SWITCHING SWITCHING SWITCHING SWITCHING SWITCHING SWITCHING
晶体管元件材料 SILICON SILICON SILICON SILICON SILICON SILICON SILICON SILICON SILICON
针数 6 - - 6 6 6 6 6 6
ECCN代码 EAR99 EAR99 EAR99 EAR99 EAR99 - - - -
是否无铅 - 含铅 含铅 - 含铅 - - 含铅 含铅
JESD-609代码 - e0 e0 e0 e0 - - e0 e0
端子面层 - TIN LEAD TIN LEAD TIN LEAD TIN LEAD - - TIN LEAD TIN LEAD
厂商名称 - - - International Rectifier ( Infineon ) International Rectifier ( Infineon ) International Rectifier ( Infineon ) International Rectifier ( Infineon ) International Rectifier ( Infineon ) International Rectifier ( Infineon )
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