DATA SHEET
MOS FIELD EFFECT TRANSISTOR
2SK3355
SWITCHING
N-CHANNEL POWER MOS FET
INDUSTRIAL USE
5
DESCRIPTION
The 2SK3355 is N-channel MOS Field Effect Transistor
designed for high current switching applications.
ORDERING INFORMATION
PART NUMBER
2SK3355
2SK3355-S
2SK3355-ZJ
2SK3355-Z
PACKAGE
TO-220AB
TO-262
TO-263
TO-220SMD
Note
FEATURES
•
Super low on-state resistance:
R
DS(on)1
= 5.8 mΩ MAX. (V
GS
= 10 V, I
D
= 42 A)
R
DS(on)2
= 8.8 mΩ MAX. (V
GS
= 4.0 V, I
D
= 42 A)
•
Low C
iss
: C
iss
= 9800 pF TYP.
•
Built-in gate protection diode
Note
TO-220SMD package is produced only
in Japan.
(TO-220AB)
ABSOLUTE MAXIMUM RATINGS (T
A
= 25°C)
Drain to Source Voltage
Gate to Source Voltage
Drain Current (DC)
Drain Current (pulse)
Note1
Total Power Dissipation (T
C
= 25°C)
Total Power Dissipation (T
A
= 25°C)
Channel Temperature
Storage Temperature
Single Avalanche Current
Note2
Single Avalanche Energy
Note2
V
DSS
V
GSS(AC)
I
D(DC)
I
D(pulse)
P
T
P
T
T
ch
T
stg
I
AS
E
AS
60
±20
±83
±332
100
1.5
150
–55 to +150
75
562
V
V
A
A
W
W
°C
°C
A
mJ
(TO-262)
Notes 1.
PW
≤
10
µ
s, Duty cycle
≤
1 %
2.
Starting T
ch
= 25 °C, R
G
= 25
Ω,
V
GS
= 20 V
→
0 V
(TO-263, TO-220SMD)
THERMAL RESISTANCE
Channel to Case
Channel to Ambient
R
th(ch-C)
R
th(ch-A)
1.25
83.3
°C/W
°C/W
The information in this document is subject to change without notice. Before using this document, please
confirm that this is the latest version.
Not all devices/types available in every country. Please check with local NEC representative for
availability and additional information.
Document No.
D14132EJ2V0DS00 (2nd edition)
Date Published May 2000 NS CP(K)
Printed in Japan
The mark
5
shows major revised points.
©
1999, 2000
2SK3355
ELECTRICAL CHARACTERISTICS (T
A
= 25 °C)
CHARACTERISTICS
Drain to Source On-state Resistance
SYMBOL
R
DS(on)1
R
DS(on)2
Gate to Source Cut-off Voltage
Forward Transfer Admittance
Drain Leakage Current
Gate to Source Leakage Current
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Turn-on Delay Time
Rise Time
Turn-off Delay Time
Fall Time
Total Gate Charge
Gate to Source Charge
Gate to Drain Charge
Body Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge
V
GS(off)
| y
fs
|
I
DSS
I
GSS
C
iss
C
oss
C
rss
t
d(on)
t
r
t
d(off)
t
f
Q
G
Q
GS
Q
GD
V
F(S-D)
t
rr
Q
rr
I
F
= 83 A, V
GS
= 0 V
I
F
= 83 A, V
GS
= 0 V,
di/dt = 100 A/
µ
s
I
D
= 83 A , V
DD
= 48 V, V
GS
= 10 V
I
D
= 42 A, V
GS(on)
= 10 V, V
DD
= 30 V,
R
G
= 10
Ω
TEST CONDITIONS
V
GS
= 10 V, I
D
= 42 A
V
GS
= 4.0 V, I
D
= 42 A
V
DS
= 10 V, I
D
= 1 mA
V
DS
= 10 V, I
D
= 42 A
V
DS
= 60 V, V
GS
= 0 V
V
GS
= ±20 V, V
DS
= 0 V
V
DS
= 10 V, V
GS
= 0 V, f = 1 MHz
9800
1500
630
130
1450
510
510
170
28
46
0.99
64
130
1.5
39
MIN.
TYP.
4.6
6.1
2.0
77
10
±10
MAX.
5.8
8.8
2.5
UNIT
mΩ
mΩ
V
S
µ
A
µ
A
pF
pF
pF
ns
ns
ns
ns
nC
nC
nC
V
ns
nC
TEST CIRCUIT 1 AVALANCHE CAPABILITY
D.U.T.
R
G
= 25
Ω
PG.
V
GS
= 20
→
0 V
BV
DSS
V
DS
V
GS
0
50
Ω
L
V
DD
TEST CIRCUIT 2 SWITCHING TIME
D.U.T.
R
L
PG.
R
G
V
DD
I
D
90 %
90 %
V
GS
V
GS
Wave Form
0
10 %
V
GS
(on)
90 %
I
AS
I
D
V
DD
I
D
I
D
Wave Form
0 10 %
10 %
τ
τ
= 1
µ
s
Duty Cycle
≤
1 %
t
d(on)
t
on
t
r
t
d(off)
t
off
t
f
Starting T
ch
TEST CIRCUIT 3 GATE CHARGE
D.U.T.
I
G
= 2 mA
50
Ω
R
L
V
DD
PG.
2
Data Sheet D14132EJ2V0DS00
2SK3355
5
TYPICAL CHARACTERISTICS (T
A
= 25 °C )
DERATING FACTOR OF FORWARD BIAS
SAFE OPERATING AREA
140
TOTAL POWER DISSIPATION vs.
CASE TEMPERATURE
dT - Percentage of Rated Power - %
P
T
- Total Power Dissipation - W
0
20
40
60
80
100
120 140
160
100
80
60
40
20
0
120
100
80
60
40
20
0
0
20
40
60
80
100
120 140
160
T
ch
- Channel Temperature -
˚C
T
C
- Case Temperature -
˚C
FORWARD BIAS SAFE OPERATING AREA
1000
I
D(pulse)
PW
=1
0
µ
s
I
D
- Drain Current - A
100
d
ite )
m V
Li 10
)
I
D(DC)
=
on
S
S(
R
D
t V
G
(a
10
0
µ
s
1m
s
10
m
s
DC
10
Di
ss
ipa
tio
n
Lim
ite
d
T
C
= 25˚C
Single Pulse
1
0.1
1
10
100
V
DS
- Drain to Source Voltage - V
TRANSIENT THERMAL RESISTANCE vs. PULSE WIDTH
1000
r
th(t)
- Transient Thermal Resistance -
˚C/W
100
R
th(ch-A)
= 83.3
˚C/W
10
1
R
th(ch-C)
= 1.25
˚C/W
0.1
Single Pulse
0.01
10
µ
100
µ
1m
10 m
100 m
1
10
100
1000
PW - Pulse Width - s
Data Sheet D14132EJ2V0DS00
3
2SK3355
FORWARD TRANSFER CHARACTERISTICS
1000 Pulsed
DRAIN CURRENT vs.
DRAIN TO SOURCE VOLTAGE
500
I
D
- Drain Current - A
I
D
- Drain Current - A
100
T
A
=
−50˚C
25˚C
75˚C
150˚C
400
V
GS
=10 V
300
200
100
4.0 V
10
1
0.1
1
2
3
4
V
DS
= 10 V
5
6
Pulsed
0
1.0
2.0
3.0
4.0
V
GS
- Gate to Source Voltage - V
V
DS
- Drain to Source Voltage - V
FORWARD TRANSFER ADMITTANCE vs.
DRAIN CURRENT
| y
fs
| - Forward Transfer Admittance - S
R
DS(on)
- Drain to Source On-state Resistance - mΩ
DRAIN TO SOURCE ON-STATE RESISTANCE vs.
GATE TO SOURCE VOLTAGE
10
Pulsed
100 V
DS
= 10 V
Pulsed
10
1
T
A
= 150˚C
75˚C
25˚C
−50˚C
5
I
D
= 42 A
0.1
0.01
0.01
0
0.1
1
10
100
0
5
10
15
20
I
D
- Drain Current - A
V
GS
- Gate to Source Voltage - V
R
DS(on)
- Drain to Source On-state Resistance - mΩ
15
Pulsed
V
GS(th)
- Gate to Source Threshold Voltage - V
DRAIN TO SOURCE ON-STATE
RESISTANCE vs. DRAIN CURRENT
GATE TO SOURCE THRESHOLD VOLTAGE vs.
CHANNEL TEMPERATURE
3.0
V
DS
= 10 V
I
D
= 1 mA
2.5
2.0
1.5
1.0
0.5
0
−50
10
V
GS
= 4.0 V
5
10 V
0
1
10
100
1000
0
50
100
150
I
D
- Drain Current - A
T
ch
- Channel Temperature -
˚C
4
Data Sheet D14132EJ2V0DS00
2SK3355
R
DS(on)
- Drain to Source On-state Resistance - mΩ
DRAIN TO SOURCE ON-STATE RESISTANCE vs.
CHANNEL TEMPERATURE
12
10
8
6
4
2
0
−50
0
50
100
I
D
= 42 A
150
V
GS
= 4.0 V
10 V
Pulsed
I
SD
- Diode Forward Current - A
SOURCE TO DRAIN DIODE
FORWARD VOLTAGE
1000
Pulsed
V
GS
= 10 V
100
V
GS
= 0 V
10
1
0.1
0
0.5
1.0
1.5
T
ch
- Channel Temperature -
˚C
V
SD
- Source to Drain Voltage - V
CAPACITANCE vs. DRAIN TO
SOURCE VOLTAGE
100000
C
iss
, C
oss
, C
rss
- Capacitance - pF
t
d(on)
, t
r
, t
d(off)
, t
f
- Switching Time - ns
SWITCHING CHARACTERISTICS
10000
t
r
1000
t
d(off)
t
f
100
t
d(on)
V
GS
= 0 V
f = 1 MHz
10000
C
iss
1 000
C
oss
C
rss
100
0.1
1
10
100
10
0.1
1
10
100
V
DS
- Drain to Source Voltage - V
I
D
- Drain Current - A
REVERSE RECOVERY TIME vs.
DRAIN CURRENT
1000
t
rr
- Reverse Recovery Time - ns
V
DS
- Drain to Source Voltage - V
di/dt = 100 A/
µ
s
V
GS
= 0 V
DYNAMIC INPUT/OUTPUT CHARACTERISTICS
100
V
GS
80
60
V
DD
= 48 V
30 V
12 V
8
10
V
GS
- Gate to Source Voltage - V
100
6
4
40
V
DS
10
20
0
0
2
I
D
= 83 A
100 120 140 160
1
0.1
1.0
10
100
20
40
60
80
I
F
- Drain Current - A
Q
G
- Gate Charge - nC
Data Sheet D14132EJ2V0DS00
5
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