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RN2904(TE85L,F): 产品描述PRE-BIASED "DIGITAL" TRANSISTOR,50V V(BR)CEO,100MA I(C),TSOP; 产品类别分立半导体晶体管; 文件大小575KB，共7页; 制造商Toshiba(东芝); 官网地址http://toshiba-semicon-storage.com/; 标准

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RN2904(TE85L,F)概述

PRE-BIASED "DIGITAL" TRANSISTOR,50V V(BR)CEO,100MA I(C),TSOP

RN2904(TE85L,F)规格参数

参数名称	属性值
是否Rohs认证	符合
包装说明	,
Reach Compliance Code	unknown
最大集电极电流 (IC)	0.1 A
最小直流电流增益 (hFE)	80
元件数量	2
极性/信道类型	PNP
最大功率耗散 (Abs)	0.2 W
表面贴装	YES
晶体管元件材料	SILICON
Base Number Matches	1

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RN2901~RN2906

TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT Process) (Bias Resistor Built-in Transistor)

RN2901,RN2902,RN2903,RN2904,RN2905,RN2906

Switching, Inverter Circuit, Interface Circuit

and Driver Circuit Applications

Unit : mm

Including two devices in US6 (ultra super mini type with 6 leads)

With built-in bias resistors

Simplify circuit design

Reduce a quantity of parts and manufacturing process

Complementary to RN1901 to RN1906

Equivalent Circuit and Bias Resistor Values

Type No.

RN2901

RN2902

RN2903

RN2904

RN2905

RN2906

R1 (kΩ)

4.7

2.2

4.7

R2 (kΩ)

4.7

US6

―

JEDEC

―

JEITA

2-2J1A

TOSHIBA

Weight: 6.8 mg (typ.)

Absolute Maximum Ratings

(Ta = 25°C) (Q1, Q2 Common)

Characteristic

Collector-base voltage

Collector-emitter voltage

Emitter-base voltage

Collector current

Collector power dissipation

Junction temperature

Storage temperature range

RN2901 to 2906

RN2901 to 2904

RN2905, 2906

Symbol

CBO

CEO

EBO

stg

Rating

−50

−10

−5

−100

200

150

−55~150

Unit

°C

Equivalent Circuit

(Top View)

Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the

significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even

if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum

ratings.

Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook

(“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test

report and estimated failure rate, etc).

* : Total rating

2010-07-09

RN2904(TE85L,F)相似产品对比

	RN2904(TE85L,F)	RN2905(TE85L,F)	RN2901(TE85L,F)	RN2902(TE85L,F)
描述	PRE-BIASED "DIGITAL" TRANSISTOR,50V V(BR)CEO,100MA I(C),TSOP	PRE-BIASED "DIGITAL" TRANSISTOR,50V V(BR)CEO,100MA I(C),TSOP	PRE-BIASED "DIGITAL" TRANSISTOR,50V V(BR)CEO,100MA I(C),TSOP	PRE-BIASED \"DIGITAL\" TRANSISTOR,50V V(BR)CEO,100MA I(C),TSOP
是否Rohs认证	符合	符合	符合	符合
Reach Compliance Code	unknown	unknown	unknown	unknown
最大集电极电流 (IC)	0.1 A	0.1 A	0.1 A	0.1 A
最小直流电流增益 (hFE)	80	80	30	50
元件数量	2	2	2	2
极性/信道类型	PNP	PNP	PNP	PNP
最大功率耗散 (Abs)	0.2 W	0.2 W	0.2 W	0.2 W
表面贴装	YES	YES	YES	YES
晶体管元件材料	SILICON	SILICON	SILICON	SILICON
Base Number Matches	1	1	1	-

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