Datasheet> 器件分类 > 分立半导体> 晶体管> RN2116MFV,LF3(T

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RN2116MFV,LF3(T: 产品描述Small Signal Bipolar Transistor; 产品类别分立半导体晶体管; 文件大小763KB，共8页; 制造商Toshiba(东芝); 官网地址http://toshiba-semicon-storage.com/

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RN2116MFV,LF3(T概述

Small Signal Bipolar Transistor

RN2116MFV,LF3(T规格参数

参数名称	属性值
包装说明	,
Reach Compliance Code	unknown
Base Number Matches	1

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RN2114MFV to RN2118MFV

TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT Process)(Bias Resistor built-in Transistor)

RN2114MFV, RN2115MFV, RN2116MFV

RN2117MFV, RN2118MFV

Unit: mm

Switching Applications

Inverter Circuit Applications

Interface Circuit Applications

Driver Circuit Applications



Ultra-small package, suited to very high density mounting



Incorporating a bias resistor into the transistor reduces the number of parts,

so enabling the manufacture of ever more compact equipment and lowering

assembly cost.



A wide range of resistor values is available for use in various circuits.



Complementary to the RN1114MFV to RN1118MFV

Equivalent Circuit and Bias Resistor Values

Type No.

RN2114MFV

RN2115MFV

RN2116MFV

RN2117MFV

RN2118MFV

R1 (kΩ)

2.2

4.7

R2 (kΩ)

4.7

1.BASE

2.EMITTER

3.COLLECTOR

VESM

JEDEC

―

JEITA

―

TOSHIBA

1-1Q1S

Weight: 1.5 mg (typ.)

Absolute Maximum Ratings

(Ta = 25°C)

Characteristic

Collector-base voltage

Collector-emitter voltage

RN2114MFV

RN2118MFV

RN2114MFV

RN2115MFV

Emitter-base voltage

RN2116MFV

RN2117MFV

RN2118MFV

Collector current

Collector power dissipation

Junction temperature

Storage temperature range

RN2114MFV

RN2118MFV

(Note1)

stg

EBO

Symbol

CBO

CEO

Rating

−50

−5

−6

−7

−15

−25

−100

150

−55

to 150

°C

Unit

Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant

change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating

conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings.

Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling

Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test report and estimated

failure rate, etc).

Note 1: Mounted on an FR4 board (25.4 mm

25.4 mm

1.6 mm)

Start of commercial production

2005-02

Toshiba Electronic Devices & Storage Corporation

2019-01-07

RN2116MFV,LF3(T相似产品对比

	RN2116MFV,LF3(T	RN2116MFV(TL3,T)
描述	Small Signal Bipolar Transistor	Small Signal Bipolar Transistor
Reach Compliance Code	unknown	unknown
Base Number Matches	1	1

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