Datasheet> 器件分类 > 分立半导体> 晶体管> RN2410(TE85R)

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RN2410(TE85R): 产品描述TRANSISTOR 100 mA, 50 V, PNP, Si, SMALL SIGNAL TRANSISTOR, 2-3F1A, 3 PIN, BIP General Purpose Small Signal; 产品类别分立半导体晶体管; 文件大小323KB，共5页; 制造商Toshiba(东芝); 官网地址http://toshiba-semicon-storage.com/

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RN2410(TE85R)概述

TRANSISTOR 100 mA, 50 V, PNP, Si, SMALL SIGNAL TRANSISTOR, 2-3F1A, 3 PIN, BIP General Purpose Small Signal

RN2410(TE85R)规格参数

参数名称	属性值
包装说明	SMALL OUTLINE, R-PDSO-G3
针数	3
Reach Compliance Code	unknown
ECCN代码	EAR99
其他特性	BUILT-IN BIAS RESISTOR
最大集电极电流 (IC)	0.1 A
集电极-发射极最大电压	50 V
配置	SINGLE WITH BUILT-IN RESISTOR
最小直流电流增益 (hFE)	120
JESD-30 代码	R-PDSO-G3
元件数量	1
端子数量	3
封装主体材料	PLASTIC/EPOXY
封装形状	RECTANGULAR
封装形式	SMALL OUTLINE
极性/信道类型	PNP
认证状态	Not Qualified
表面贴装	YES
端子形式	GULL WING
端子位置	DUAL
晶体管应用	SWITCHING
晶体管元件材料	SILICON
标称过渡频率 (fT)	200 MHz
Base Number Matches	1

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RN2410,RN2411

TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT Process)

RN2410, RN2411

Switching, Inverter Circuit, Interface Circuit

And Driver Circuit Applications

With built-in bias resistors

Simplified circuit design

Reduce a quantity of parts and manufacturing process

Complementary to RN1410, RN1411

Unit: mm

Equivalent Circuit

Absolute Maximum Ratings

(Ta = 25°C)

Characterisstic

Collector-base voltage

Collector-emitter voltage

Emitter-base voltage

Collector current

Collector power dissipation

Junction temperature

Storage temperature range

Symbol

CBO

CEO

EBO

stg

Rating

−50

−5

−100

200

150

−55~150

Unit

°C

JEDEC

TO-236MOD

EIAJ

SC-59

TOSHIBA

2-3F1A

Weight: 0.012g

Electrical Characteristics

(Ta

25°C)

Characteristic

Collector cut-off current

Emitter cut-off current

DC current gain

Collector-emitter saturation voltage

Translation frequency

Collector output capacitance

Input resistor

RN2410

RN2411

Symbol

CBO

EBO

CE (sat)

Test

Circuit

―

Test Condition

−50

V, I

= 0

−5

V, I

= 0

−5

V, I

−1

−5

mA, I

−0.25

−10

V, I

−5

−10

V, I

= 0, f = 1 MHz

―

Min

―

120

―

3.29

Typ.

―

−0.1

200

4.7

Max

−100

400

−0.3

―

6.11

Unit

―

MHz

kΩ

2006-03-14

RN2410(TE85R)相似产品对比

	RN2410(TE85R)	RN2410(TE85R2)	RN2410(TE85L)	RN2410(TE85L2)
描述	TRANSISTOR 100 mA, 50 V, PNP, Si, SMALL SIGNAL TRANSISTOR, 2-3F1A, 3 PIN, BIP General Purpose Small Signal	TRANSISTOR 100 mA, 50 V, PNP, Si, SMALL SIGNAL TRANSISTOR, 2-3F1A, 3 PIN, BIP General Purpose Small Signal	TRANSISTOR 100 mA, 50 V, PNP, Si, SMALL SIGNAL TRANSISTOR, 2-3F1A, 3 PIN, BIP General Purpose Small Signal	TRANSISTOR 100 mA, 50 V, PNP, Si, SMALL SIGNAL TRANSISTOR, 2-3F1A, 3 PIN, BIP General Purpose Small Signal
包装说明	SMALL OUTLINE, R-PDSO-G3	SMALL OUTLINE, R-PDSO-G3	SMALL OUTLINE, R-PDSO-G3	SMALL OUTLINE, R-PDSO-G3
针数	3	3	3	3
Reach Compliance Code	unknown	unknown	unknown	unknown
ECCN代码	EAR99	EAR99	EAR99	EAR99
其他特性	BUILT-IN BIAS RESISTOR	BUILT-IN BIAS RESISTOR	BUILT-IN BIAS RESISTOR	BUILT-IN BIAS RESISTOR
最大集电极电流 (IC)	0.1 A	0.1 A	0.1 A	0.1 A
集电极-发射极最大电压	50 V	50 V	50 V	50 V
配置	SINGLE WITH BUILT-IN RESISTOR	SINGLE WITH BUILT-IN RESISTOR	SINGLE WITH BUILT-IN RESISTOR	SINGLE WITH BUILT-IN RESISTOR
最小直流电流增益 (hFE)	120	120	120	120
JESD-30 代码	R-PDSO-G3	R-PDSO-G3	R-PDSO-G3	R-PDSO-G3
元件数量	1	1	1	1
端子数量	3	3	3	3
封装主体材料	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY
封装形状	RECTANGULAR	RECTANGULAR	RECTANGULAR	RECTANGULAR
封装形式	SMALL OUTLINE	SMALL OUTLINE	SMALL OUTLINE	SMALL OUTLINE
极性/信道类型	PNP	PNP	PNP	PNP
认证状态	Not Qualified	Not Qualified	Not Qualified	Not Qualified
表面贴装	YES	YES	YES	YES
端子形式	GULL WING	GULL WING	GULL WING	GULL WING
端子位置	DUAL	DUAL	DUAL	DUAL
晶体管应用	SWITCHING	SWITCHING	SWITCHING	SWITCHING
晶体管元件材料	SILICON	SILICON	SILICON	SILICON
标称过渡频率 (fT)	200 MHz	200 MHz	200 MHz	200 MHz

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