DACO SEMICONDUCTOR CO.,LTD
.
Features
High surge Capability
Types Up to 100V V
RRM
Isolation Type Package
Electrically Isolation base plate
MBRT12020(R)
THRU
MBRT120100(R)
SCHOTTKY DIODE MODULE TYPES 120A
120 Amp Rectifier
20~100 Volts
THREE TOWER
A
B
G
K
G
C
G
Maximum Ratings
Operating Temperature: -55℃ to+150
℃
Storage Temperature: -55℃ to+150
℃
G
M
J
G
F
N
Part Number
MBRT12020(R)
MBRT12030(R)
MBRT12035(R)
MBRT12040(R)
MBRT12045(R)
MBRT12060(R)
MBRT12080(R)
MBRT120100(R)
Maximum
Recurrent
Peak Reverse
Voltage
20V
30V
35V
40V
45V
60V
80V
100V
Maximum
RMS Voltage
14V
21V
25V
28V
32V
42V
56V
70V
Maximum DC
Blocking
Voltage
20V
30V
35V
40V
45V
60V
80V
100V
Commom Center
Common Cathode
N-Type
LUG
Teminal
Anode 1
NAME PLATE
H
G
E
LUG
LUG
Teminal Teminal
Catode 2 Anode 3
LUG
LUG
Teminal
Teminal
Cathode 1 Anode 2
LUG
Teminal
Cathode 3
Common Center
R=Common Anode
P-Type
Inches
Millimeters
Max
NOM
1.585
.800
.132
REF
3.65
.73
Min
80.01
39.75
17.78
3.02
33.72
90.17
-----
Max
NOM
40.26
20.32
3.35
REF
92.71
18.30
Electrcal Characteristics @ 25℃ Unless Otherwise Specified
Average Forward
Current
(Per pkg)
Peak Forward Surge
(Per leg)
Current
Maximum
(Per leg)
20V~45V
50V~60V
Instantaneous
80V~100V
Forward Voltage
NOTE (1)
Maximum
Instantaneous
Reverse Current At
Rated DC Blocking
(Per leg)
Voltage
Maximum Thermal
Resistance Junction
To Case
(Per leg)
I
F(AV)
I
FSM
V
F
120A
800A
0.70V
0.75V
0.84V
DIM
A
B
C
E
F
G
H
J
K
Min
3.150
1.565
.700
.119
1.327
3.55
-----
T
C
=125
8.3ms,half sine
I
FM=60A;T
J
=25
T
J
= 25
T
J
=100
T
J
=150
I
R
1 mA
10 mA
30 mA
0.80
/W
R jc
.472
.275
2.38
M
N
1/4-20 UNC FULL
-----
.511
12
-----
-----
.295
6.99
2.46
60.5
13
7.49
62.5
NOTE :
(1)
Pulse Test: Pulse Width 300
μsec
,Duty<2%
WWW.dacosemi.com.tw
-1-
DACO SEMICONDUCTOR CO.,LTD.
MBRT12020(R) THRU MBRT120100(R)
Figure.1-Typical Forward Characteristics
90
Average Forward Rectified Current-Ampere
Figure.2-Forward Derating Curve
100
T
J
= 25
75
Instantaneous Forward Current-Ampere
Amp Per lge
80
70
60
55
35
MBRT12060(R)
MBRT12020(R)
MBRT12030(R)
MBRT12035(R)
MBRT12040(R)
MBRT12045(R)
60
Per lge
Amp
45
30
15
Single Phase,Half Wave
-60Hz Res istive or Inductive Load
10
6.0
4.0
2.0
1.0
0
MBRT12080(R)
MBRT120100(R)
0
30
60
150
90
120
℃
Case Temperature -
℃
180
0
0.2
0.4
0.6
0.8
1.0
1.2
Vo lts
Instantaneous Forward Voltage -Volts
100
60
40
20
10
Figure.4-Typical Reverse Characteristics
T
J
=150
m
A
Figupre.3-Peak Forward Surge Current
1200
6
4
T
J
=100
Instantaneous Reverse Leakage Current-
Peak Forward Surge Current-Ampere
m
A
1000
800
600
400
200
0
8.3ms Single Half
Sine Wave
JEDEC method T
J
=25
2
1
0.6
0.4
0.2
0.1
.06
.04
.02
T
J
=25
Amp
Per lge
1
2
4
6
8 10
20
40
60 80 100
.01
Cycles
Number Of Cycles At60Hz -Cycles
20
30
40
60
70
80
Volts
Revers Voltage - Volts(%)
50
90
100
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-2-
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