KM616FV2000, KM616FS2000, KM616FR2000 Family
ocument Title
CMOS SRAM
128K x16 bit Super Low Power and Low Voltage Full CMOS Static RAM
Revision History
Revision No. History
0.0
0.1
Design target
Initial draft
- Add KM616FV2000 Family
- Erase KM616FU1000 Family and KM616FS1000 Family supprot
2.3~3.3V operating Vcc.
- Concept change high power version to low low power version
I
SB1
=10µA(Max)
- Add super low power version with special handling
I
SB1
=2.0µA(Max)
- Reduce Icc & Icc1
Write : 25mA to 20mA at Vcc=3.6V(Max)
Finalize
- Change datasheet format
- Erase reverse type package
Draft Date
October 2, 1996
December 1, 1996
Remark
Advance
Preliminary
1.0
March 4, 1998
Final
The attached datasheets are provided by SAMSUNG Electronics. SAMSUNG Electronics CO., LTD. reserve the right to change the specifications and
products. SAMSUNG Electronics will answer to your questions about device. If you have any questions, please contact the SAMSUNG branch offices.
1
Revision 1.0
March 1998
KM616FV2000, KM616FS2000, KM616FR2000 Family
FEATURES
•
Process Technology : Full CMOS
•
Organization : 128Kx16
•
Power Supply Voltage
KM616FV2000 Family : 3.0V ~ 3.6V
KM616FS2000 Family : 2.3V ~ 3.3V
KM616FR2000 Family : 1.8V ~ 2.7V
•
Low Data Retention Voltage : 1.5V(Min)
•
Three state output status and TTL Compatible
•
Package Type : 44-TSOP2-400F
CMOS SRAM
128Kx16 bit Super Low Power and Low Voltage Full CMOS Static RAM
GENERAL DESCRIPTION
The KM616FV2000, KM616FS2000 and KM616FR2000
families are fabricated by SAMSUNG′s advanced Full
CMOS process technology. The families support various
operating temperature ranges for user flexibility of system
design. The families also support low data retention voltage
for battery back-up operation with low data retention current.
PRODUCT FAMILY
Power Dissipation
Product Family
KM616FV2000
KM616FS2000
KM616FR2000
KM616FV2000I
KM616FS2000I
KM616FR2000I
1. The parameter is measured with 30pF test load.
2. Super low power product=2µA with special handling.
Operating Temperature
Vcc Range
3.0~3.6V
Speed(ns)
70
1)
/85@V
CC
=3.3±0.3V
85@V
CC
=3.0±0.3V
120
1)
/150@V
CC
=2.5±0.2V
Standby
(I
SB1
, Max)
Operating
(I
CC2
, Max)
80mA
80mA
50mA
PKG Type
Commercial(0~70°C)
2.3~3.3V
1.8~2.7V
3.0~3.6V
300
1)
@V
CC
=2.0±0.2V
70
1)
/85@V
CC
=3.3±0.3V
85@V
CC
=3.0±0.3V
120
1)
/150@V
CC
=2.5±0.2V
10µA
2)
20mA
80mA
80mA
50mA
20mA
44-TSOP2-
Forward
Industrial(-40~85°C)
2.3~3.3V
1.8~2.7V
300
1)
@V
CC
=2.0±0.2V
PIN DESCRIPTION
A4
A3
A2
A1
A0
CS
I/OI
I/O2
I/O3
I/O4
Vcc
Vss
I/O5
I/O6
I/O7
I/O8
WE
A16
A15
A14
A13
A12
1
2
3
4
5
6
7
8
9
10
11
12
13
14
15
16
17
18
19
20
21
22
44
43
42
41
40
39
38
37
36
35
34
33
32
31
30
29
28
27
26
25
24
23
A5
A6
A7
OE
UB
LB
I/O16
I/O15
I/O14
I/O13
Vss
Vcc
I/O12
I/O11
I/O10
I/O9
N.C
A8
A9
A10
A11
N.C
FUNCTIONAL BLOCK DIAGRAM
Clk gen.
A4
A3
A2
A1
A0
A16
A14
A15
A12
A13
I/O
1
~I/O
8
Precharge circuit.
Vcc
Vss
Memory array
1024 rows
128×16 columns
44-TSOP2
Forward
Row
select
Data
cont
Data
cont
Data
cont
I/O Circuit
Column select
I/O
9
~I/O
16
Name
CS
OE
WE
A
0
~A
16
Function
Chip Select Input
Output Enable Input
Write Enable Input
Address Inputs
Name
LB
UB
Vcc
Vss
N.C.
Function
Lower Byte(I/O
1
~
8
)
Upper Byte(I/O
9
~
16
)
Power
Ground
No Connection
WE
OE
UB
A9 A8 A5 A6 A7 A11 A10
I/O
1
~I/O
16
Data Inputs/Outputs
Control
logic
LB
CS
SAMSUNG ELECTRONICS CO., LTD.
reserves the right to change products and specifications without notice.
2
Revision 1.0
March 1998
KM616FV2000, KM616FS2000, KM616FR2000 Family
PRODUCT LIST
Commercial Temperature Products(0~70°C)
Part Name
KM616FV2000T-7
KM616FV2000T-8
KM616FS2000T-12
KM616FS2000T-15
KM616FR2000T-30
Function
44-TSOP2 F, 70ns, 3.3V, LL
44-TSOP2 F, 85ns, 3.3V, LL
44-TSOP2 F, 120/85ns, 2.5/3.0V, LL
44-TSOP2 F, 150/85ns, 2.5/3.0V, LL
44-TSOP2 F, 300ns, 2.0/2.5V, LL
CMOS SRAM
Industrial Temperature Products(-40~85°C)
Part Name
KM616FV2000TI-7
KM616FV2000TI-8
KM616FS2000TI-12
KM616FS2000TI-15
KM616FR2000TI-30
Function
44-TSOP2 F, 70ns, 3.3V, LL
44-TSOP2 F, 85ns, 3.3V, LL
44-TSOP2 F, 120/85ns, 2.5/3.0V, LL
44-TSOP2 F, 150/85ns, 2.5/3.0V, LL
44-TSOP2 F, 300ns, 2.0/2.5V, LL
FUNCTIONAL DESCRIPTION
CS
H
L
L
L
L
L
L
L
L
OE
X
1)
H
X
1)
L
L
L
X
1)
X
1)
X
1)
WE
X
1)
H
X
1)
H
H
H
L
L
L
LB
X
1)
X
1)
H
L
H
L
L
H
L
UB
X
1)
X
1)
H
H
L
L
H
L
L
I/O
1~8
High-Z
High-Z
High-Z
Dout
High-Z
Dout
Din
High-Z
Din
I/O
9~16
High-Z
High-Z
High-Z
High-Z
Dout
Dout
High-Z
Din
Din
Mode
Deselected
Output Disabled
Output Disabled
Lower Byte Read
Upper Byte Read
Word Read
Lower Byte Write
Upper Byte Write
Word Write
Power
Standby
Active
Active
Active
Active
Active
Active
Active
Active
1. X means don′t care. (Must be in low or high state)
ABSOLUTE MAXIMUM RATINGS
1)
Item
Voltage on any pin relative to Vss
Voltage on Vcc supply relative to Vss
Power Dissipation
Storage temperature
Operating Temperature
Symbol
V
IN
,V
OUT
V
CC
P
D
T
STG
T
A
Ratings
-0.2 to 3.6V
2)
-0.2 to 4.0V
3)
1.0
-55 to 150
0 to 70
-40 to 85
Soldering temperature and time
T
SOLDER
260°C, 5sec (Lead Only)
Unit
V
V
W
°C
°C
°C
-
Remark
-
-
-
-
KM616FV2000, KM616FS2000, KM616FR2000
KM616FV2000I, KM616FS2000I, KM616FR2000I
-
1. Stresses greater than those listed under "Absolute Maximum Ratings" may cause permanent damage to the device. Functional operation should be
restricted to recommended operating condition. Exposure to absolute maximum rating conditions for extended periods may affect reliability.
2. V
IN
/V
OUT
=-0.2 to 3.9V for KM616FV2000 Family.
3. V
CC
=-0.2 to 4.6V for KM616FV2000 Family
3
Revision 1.0
March 1998
KM616FV2000, KM616FS2000, KM616FR2000 Family
RECOMMENDED DC OPERATING CONDITIONS
1)
Item
Symbol
Product
KM616FV2000 Family
Supply voltage
Vcc
KM616FS2000 Family
KM616FR2000 Family
Ground
Vss
All Family
KM616FV2000 Family
KM616FS2000 Family
Vcc=3.3±0.3V
Vcc=3.0±0.3V
Vcc=2.5±0.2V
KM616FR2000 Family
Input low voltage
V
IL
All Family
Vcc=2.5±0.2V
Vcc=2.0±0.2V
Min
3.0
2.3
1.8
0
2.2
2.2
2.0
2.0
1.6
-0.2
3)
-
-
Typ
3.3
2.5/3.0
2.0/2.5
0
CMOS SRAM
Max
3.6
3.3
2.7
0
V
V
Unit
Input high voltage
V
IH
Vcc+0.2
2)
V
0.4
V
Note
1 Commercial Product : T
A
=0 to 70°C, unless otherwise specified
Industrial Product : T
A
=-40 to 85°C, unless otherwise specified
2. Overshoot : Vcc + 1.0V in case of pulse width
≤20ns
3. Undershoot : -1.0V in case of pulse width
≤20ns
4. Overshoot and undershoot are sampled, not 100% tested.
CAPACITANCE
1)
(f=1MHz, T
A
=25°C)
Item
Input capacitance
Input/Output capacitance
1. Capacitance is sampled, not 100% tested
Symbol
C
IN
C
IO
Test Condition
V
IN
=0V
V
IO
=0V
Min
-
-
Max
8
10
Unit
pF
pF
DC AND OPERATING CHARACTERISTICS
Item
Input leakage current
Output leakage current
Operating power supply current
Symbol
I
LI
I
LO
I
CC
I
CC1
Average operating current
I
CC2
Cycle time=Min, 100% duty,
I
IO
=0mA, CS=V
IL
, V
IN
=V
IL
or V
IH
2.1mA at Vcc=3.0/3.3V
Output low voltage
V
OL
I
OL
0.5mA at Vcc=2.5V
0.33mA at Vcc=2.0V
-1.0mA at Vcc=3.0/3.3V
Output high voltage
V
OH
I
OH
-0.5mA at Vcc=2.5V
-0.44mA at Vcc=2.0V
Standby Current(TTL)
Standby Current(CMOS)
I
SB
I
SB1
CS=V
IH
, Other inputs=V
IL
or V
IH
CS≥Vcc-0.2V, Other inputs=0~Vcc
V
IN
=Vss to Vcc
CS=V
IH
or OE=V
IH
or WE=V
IL
, V
IO
=Vss to Vcc
I
IO
=0mA, CS=V
IL
, V
IN
=V
IL
or V
IH
, Read
Cycle time=1µs, 100% duty, I
IO
=0mA,
CS≤0.2V, V
IN
≤0.2V
or V
IN
≥V
CC
-0.2V
Read
Write
Test Conditions
Min
-1
-1
-
-
-
-
-
-
-
-
-
2.4
2.0
1.6
-
-
Typ
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
Max
1
1
3
7
20
70
60
20
0.4
0.4
0.4
-
-
-
0.3
10
1)
mA
µA
V
V
mA
Unit
µA
µA
mA
mA
Vcc=3.3V@70ns
Vcc=2.7V@120ns
Vcc=2.2V@300ns
1. Super low power product=2µA with special handling.
4
Revision 1.0
March 1998
KM616FV2000, KM616FS2000, KM616FR2000 Family
AC OPERATING CONDITIONS
TEST CONDITIONS
(Test Load and Test Input/Output Reference)
Input pulse level : 0.4 to 2.2V for Vcc=3.3V, 3.0V, 2.5V
0.4 to 1.8V for Vcc=2.0V
Input rising and falling time : 5ns
Input and output reference voltage : 1.5V for Vcc=3.3V, 3.0V
1.1V for Vcc=2.5V
0.9V for Vcc=2.0V
Output load (See right) : C
L
=100pF+1TTL
C
L
=30pF+1TTL
CMOS SRAM
V
TM
3)
R
1
2)
C
L
1)
R
2
3)
1. Including scope and jig capacitance
2. R
1
=3070Ω
,
R
2
=3150Ω
3. V
TM
=2.8V for V
CC
=3.0/3.3V
=2.3V for V
CC
=2.5V
=1.8V for V
CC
=2.0V
AC CHARACTERISTICS
(Commercial product :T
A
=0 to 70°C, Industrial product : T
A
=-40 to 85°C
KM616FV2000 Family : Vcc=3.0~3.6V, KM616FS2000 Family : Vcc=2.3~3.3V,
KM616FR2000 Family : Vcc=1.8~2.7V)
Speed Bins
Parameter List
Symbol
70ns
Min
Read cycle time
Address access time
Chip select to output
Output enable to valid output
Read
UB, LB Access Time
Chip select to low-Z output
Output enable to low-Z output
Chip disable to high-Z output
Output disable to high-Z output
Output hold from address change
Write cycle time
Chip select to end of write
Address set-up time
Address valid to end of write
Write pulse width
Write UB, LB Valid to End of Write
Write recovery time
Write to output high-Z
Data to write time overlap
Data hold from write time
End write to output low-Z
t
RC
t
AA
t
CO
t
OE
t
BA
t
LZ
t
OLZ
, t
BLZ
t
HZ
t
OHZ
, t
BHZ
t
OH
t
WC
t
CW
t
AS
t
AW
t
WP
t
BW
t
WR
t
WHZ
t
DW
t
DH
t
OW
70
-
-
-
-
10
5
0
0
10
70
60
0
65
55
65
0
0
30
0
5
Max
-
70
70
35
35
-
-
25
25
-
-
-
-
-
-
-
-
25
-
-
-
85ns
Min
85
-
-
-
-
10
5
0
0
15
85
70
0
70
60
70
0
0
35
0
5
Max
-
85
85
45
45
-
-
25
25
-
-
-
-
-
-
-
-
25
-
-
-
120ns
Min
120
-
-
-
-
20
20
0
0
15
120
100
0
100
80
100
0
0
50
0
5
Max
-
120
120
60
60
-
-
35
35
-
-
-
-
-
-
-
-
35
-
-
-
150ns
Min
150
-
-
-
-
20
20
0
0
15
150
120
0
120
100
120
0
0
60
0
5
Max
-
150
150
75
75
-
-
40
40
-
-
-
-
-
-
-
-
40
-
-
-
300ns
Min
300
-
-
-
-
50
30
0
0
30
300
300
0
300
200
300
0
0
120
0
20
Max
-
300
300
150
150
-
-
60
60
-
-
-
-
-
-
-
-
60
-
-
-
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
Units
DATA RETENTION CHARACTERISTICS
Item
Vcc for data retention
Data retention current
Data retention set-up time
Recovery time
Symbol
V
DR
I
DR
t
SDR
t
RDR
Test Condition
CS≥Vcc-0.2V
Vcc=3.0V, CS≥Vcc-0.2V
See data retention waveform
Min
1.5
-
0
t
RC
Typ
-
-
-
-
Max
3.6
10
1)
-
-
Unit
V
µA
ns
1. Super low power product=2µA
with special handling.
5
Revision 1.0
March 1998
电源技术
京公网安备 11010802033920号
Copyright © 2005-2026 EEWORLD.com.cn, Inc. All rights reserved
电子工程世界
