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HB52D88GB-A6FL: 产品描述Synchronous DRAM Module, 8MX16, 6ns, CMOS, MICRO, DIMM-144; 产品类别存储存储; 文件大小88KB，共22页; 制造商Hitachi （Renesas ）; 官网地址http://www.renesas.com/eng/

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HB52D88GB-A6FL概述

Synchronous DRAM Module, 8MX16, 6ns, CMOS, MICRO, DIMM-144

HB52D88GB-A6FL规格参数

参数名称	属性值
零件包装代码	DIMM
包装说明	DIMM, DIMM144,20
针数	144
Reach Compliance Code	unknown
ECCN代码	EAR99
访问模式	SINGLE BANK PAGE BURST
最长访问时间	6 ns
其他特性	AUTO/SELF REFRESH; LG-MAX; WD-MAX; SEATED HGT-NOM
最大时钟频率 (fCLK)	100 MHz
I/O 类型	COMMON
JESD-30 代码	R-XDMA-N144
长度	42 mm
内存密度	134217728 bit
内存集成电路类型	SYNCHRONOUS DRAM MODULE
内存宽度	16
功能数量	1
端口数量	1
端子数量	144
字数	8388608 words
字数代码	8000000
工作模式	SYNCHRONOUS
最高工作温度	65 °C
最低工作温度
组织	8MX16
输出特性	3-STATE
封装主体材料	UNSPECIFIED
封装代码	DIMM
封装等效代码	DIMM144,20
封装形状	RECTANGULAR
封装形式	MICROELECTRONIC ASSEMBLY
电源	3.3 V
认证状态	Not Qualified
刷新周期	4096
座面最大高度	30 mm
自我刷新	YES
最大待机电流	0.008 A
最大压摆率	0.88 mA
最大供电电压 (Vsup)	3.6 V
最小供电电压 (Vsup)	3 V
标称供电电压 (Vsup)	3.3 V
表面贴装	NO
技术	CMOS
温度等级	COMMERCIAL
端子形式	NO LEAD
端子节距	0.5 mm
端子位置	DUAL
宽度	3.8 mm
Base Number Matches	1

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HB52D88GB-F

64 MB Unbuffered SDRAM Micro DIMM

8-Mword

64-bit, 100 MHz Memory Bus, 1-Bank Module

(4 pcs of 8 M

16 components)

PC100 SDRAM

ADE-203-1148A (Z)

Rev. 1.0

Jul. 4, 2000

Description

The HB52D88GB is a 8M

1 banks Synchronous Dynamic RAM Micro Dual In-line Memory Module

(Micro DIMM), mounted 4 pieces of 128-Mbit SDRAM (HM5212165FTD) sealed in TSOP package and 1

piece of serial EEPROM (2-kbit EEPROM) for Presence Detect (PD). An outline of the product is 144-pin

Zig Zag Dual tabs socket type compact and thin package. Therefore, it makes high density mounting possible

without surface mount technology. It provides common data inputs and outputs. Decoupling capacitors are

mounted beside TSOP on the module board.

Features

•

144-pin Zig Zag Dual tabs socket type



Outline: 38.00 mm (Length)

30.00 mm (Height)

3.80 mm (Thickness)



Lead pitch: 0.50 mm

•

3.3 V power supply

•

Clock frequency: 100 MHz (max)

•

LVTTL interface

•

Data bus width:

64 Non parity

•

Single pulsed

RAS

•

4 Banks can operates simultaneously and independently

•

Burst read/write operation and burst read/single write operation capability

•

Programmable burst length : 1/2/4/8/full page

•

2 variations of burst sequence



Sequential (BL = 1/2/4/8/full page)



Interleave (BL = 1/2/4/8)

HB52D88GB-A6FL相似产品对比

	HB52D88GB-A6FL	HB52D88GB-A6F	HB52D88GB-B6FL	HB52D88GB-B6F
描述	Synchronous DRAM Module, 8MX16, 6ns, CMOS, MICRO, DIMM-144	Synchronous DRAM Module, 8MX16, 6ns, CMOS, MICRO, DIMM-144	Synchronous DRAM Module, 8MX16, 6ns, CMOS, MICRO, DIMM-144	Synchronous DRAM Module, 8MX16, 6ns, CMOS, MICRO, DIMM-144
零件包装代码	DIMM	DIMM	DIMM	DIMM
包装说明	DIMM, DIMM144,20	DIMM, DIMM144,20	DIMM, DIMM144,20	DIMM, DIMM144,20
针数	144	144	144	144
Reach Compliance Code	unknown	unknown	unknown	unknown
ECCN代码	EAR99	EAR99	EAR99	EAR99
访问模式	SINGLE BANK PAGE BURST	SINGLE BANK PAGE BURST	SINGLE BANK PAGE BURST	SINGLE BANK PAGE BURST
最长访问时间	6 ns	6 ns	6 ns	6 ns
其他特性	AUTO/SELF REFRESH; LG-MAX; WD-MAX; SEATED HGT-NOM	AUTO/SELF REFRESH; LG-MAX; WD-MAX; SEATED HGT-NOM	AUTO/SELF REFRESH; LG-MAX; WD-MAX; SEATED HGT-NOM	AUTO/SELF REFRESH; LG-MAX; WD-MAX; SEATED HGT-NOM
最大时钟频率 (fCLK)	100 MHz	100 MHz	100 MHz	100 MHz
I/O 类型	COMMON	COMMON	COMMON	COMMON
JESD-30 代码	R-XDMA-N144	R-XDMA-N144	R-XDMA-N144	R-XDMA-N144
长度	42 mm	42 mm	42 mm	42 mm
内存密度	134217728 bit	134217728 bit	134217728 bit	134217728 bit
内存集成电路类型	SYNCHRONOUS DRAM MODULE	SYNCHRONOUS DRAM MODULE	SYNCHRONOUS DRAM MODULE	SYNCHRONOUS DRAM MODULE
内存宽度	16	16	16	16
功能数量	1	1	1	1
端口数量	1	1	1	1
端子数量	144	144	144	144
字数	8388608 words	8388608 words	8388608 words	8388608 words
字数代码	8000000	8000000	8000000	8000000
工作模式	SYNCHRONOUS	SYNCHRONOUS	SYNCHRONOUS	SYNCHRONOUS
最高工作温度	65 °C	65 °C	65 °C	65 °C
组织	8MX16	8MX16	8MX16	8MX16
输出特性	3-STATE	3-STATE	3-STATE	3-STATE
封装主体材料	UNSPECIFIED	UNSPECIFIED	UNSPECIFIED	UNSPECIFIED
封装代码	DIMM	DIMM	DIMM	DIMM
封装等效代码	DIMM144,20	DIMM144,20	DIMM144,20	DIMM144,20
封装形状	RECTANGULAR	RECTANGULAR	RECTANGULAR	RECTANGULAR
封装形式	MICROELECTRONIC ASSEMBLY	MICROELECTRONIC ASSEMBLY	MICROELECTRONIC ASSEMBLY	MICROELECTRONIC ASSEMBLY
电源	3.3 V	3.3 V	3.3 V	3.3 V
认证状态	Not Qualified	Not Qualified	Not Qualified	Not Qualified
刷新周期	4096	4096	4096	4096
座面最大高度	30 mm	30 mm	30 mm	30 mm
自我刷新	YES	YES	YES	YES
最大待机电流	0.008 A	0.008 A	0.008 A	0.008 A
最大压摆率	0.88 mA	0.88 mA	0.88 mA	0.88 mA
最大供电电压 (Vsup)	3.6 V	3.6 V	3.6 V	3.6 V
最小供电电压 (Vsup)	3 V	3 V	3 V	3 V
标称供电电压 (Vsup)	3.3 V	3.3 V	3.3 V	3.3 V
表面贴装	NO	NO	NO	NO
技术	CMOS	CMOS	CMOS	CMOS
温度等级	COMMERCIAL	COMMERCIAL	COMMERCIAL	COMMERCIAL
端子形式	NO LEAD	NO LEAD	NO LEAD	NO LEAD
端子节距	0.5 mm	0.5 mm	0.5 mm	0.5 mm
端子位置	DUAL	DUAL	DUAL	DUAL
宽度	3.8 mm	3.8 mm	3.8 mm	3.8 mm
Base Number Matches	1	1	1	-

HB52D88GB-A6FL

HB52D88GB-A6FL概述

HB52D88GB-A6FL规格参数

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