IDT54/74FCT827AT/BT/CT/DT, IDT54/74FCT2827AT/BT/CT
HIGH-PERFORMANCE CMOS BUFFERS
MILITARY AND COMMERCIAL TEMPERATURE RANGES
FAST CMOS 10-BIT
BUFFERS
Integrated Device Technology, Inc.
IDT54/74FCT827AT/BT/CT/DT
IDT54/74FCT2827AT/BT/CT
FEATURES:
• Common features:
– Low input and output leakage
≤1µA
(max.)
– CMOS power levels
– True TTL input and output compatibility
– V
OH
= 3.3V (typ.)
– V
OL
= 0.3V (typ.)
– Meets or exceeds JEDEC standard 18 specifications
– Product available in Radiation Tolerant and Radiation
Enhanced versions
– Military product compliant to MIL-STD-883, Class B
and DESC listed (dual marked)
– Available in DIP, SOIC, SSOP, QSOP, CERPACK
and LCC packages
• Features for FCT827T:
– A, B, C and D speed grades
– High drive outputs (-15mA I
OH
, 48mA I
OL
)
• Features for FCT2827T:
– A, B and C speed grades
– Resistor outputs (-15mA I
OH
, 12mA I
OL
Com.)
(-12mA I
OH
, 12mA I
OL
Mil.)
– Reduced system switching noise
DESCRIPTION:
The FCT827T is built using an advanced dual metal CMOS
technology.
The FCT827T/FCT2827T 10-bit bus drivers provide high-
performance bus interface buffering for wide data/address
paths or buses carrying parity. The 10-bit buffers have NAND-
ed output enables for maximum control flexibility.
All of the FCT827T high-performance interface family are
designed for high-capacitance load drive capability, while
providing low-capacitance bus loading at both inputs and
outputs. All inputs have clamp diodes to ground and all outputs
are designed for low-capacitance bus loading in high-imped-
ance state.
The FCT2827T has balanced output drive with current
limiting resistors. This offers low ground bounce, minimal
undershoot and controlled output fall times-reducing the need
for external series terminating resistors. FCT2827T parts are
plug-in replacements for FCT827T parts.
FUNCTIONAL BLOCK DIAGRAM
Y
0
Y
1
Y
2
Y
3
Y
4
Y
5
Y
6
Y
7
Y
8
Y
9
D
0
D
1
D
2
D
3
D
4
D
5
D
6
D
7
D
8
D
9
OE
1
OE
2
2573 drw 01
The IDT logo is a registered trademark of Integrated Device Technology, Inc.
MILITARY AND COMMERCIAL TEMPERATURE RANGES
©1995
Integrated Device Technology, Inc.
AUGUST 1995
DSC-4217/5
6.22
6.22
1
1
IDT54/74FCT827AT/BT/CT/DT, IDT54/74FCT2827AT/BT/CT
HIGH-PERFORMANCE CMOS BUFFERS
MILITARY AND COMMERCIAL TEMPERATURE RANGES
PIN CONFIGURATIONS
INDEX
2573 drw 02
D
8
D
9
GND
NC
OE
2
Y
9
Y
8
OE
1
D
0
D
1
D
2
D
3
D
4
D
5
D
6
D
7
D
8
D
9
GND
1
2
3 P24-1
4 D24-1
5 SO24-2
6 SO24-7
7 SO24-8
&
8
E24-1
9
10
11
12
24
23
22
21
20
19
18
17
16
15
14
13
V
CC
Y
0
Y
1
Y
2
Y
3
Y
4
Y
5
Y
6
Y
7
Y
8
Y
9
OE
2
D
2
D
3
D
4
NC
D
5
D
6
D
7
4 3 2
1 28 27 26
25
5
24
6
23
7
8
22
L28-1
9
21
20
10
19
11
1213 14 15 16 17 18
D
1
D
0
OE
1
NC
V
CC
Y
0
Y
1
Y
2
Y
3
Y
4
NC
Y
5
Y
6
Y
7
2573 drw 03
DIP/SOIC/SSOP/QSOP/CERPACK
TOP VIEW
LCC
TOP VIEW
PIN DESCRIPTION
Names
I/O
FUNCTION TABLE
(1)
Inputs
Output
D
I
L
H
X
X
Y
I
L
H
Z
Z
Function
Transparent
Three-State
2573 tbl 02
OE
I
D
I
Y
I
I
I
O
Description
When both are LOW the outputs are
enabled. When either one or both are
HIGH the outputs are High Z.
10-bit data input.
10-bit data output.
2573 tbl 01
OE
1
L
L
H
X
OE
2
L
L
X
H
NOTE:
1. H = HIGH, L = LOW, X = Don’t Care, Z = High Impedance
ABSOLUTE MAXIMUM RATINGS
(1)
Symbol
Rating
Commercial
V
TERM(2)
Terminal Voltage
–0.5 to +7.0
with Respect to
GND
V
TERM(3)
Terminal Voltage
–0.5 to
with Respect to
V
CC
+0.5
GND
T
A
Operating
0 to +70
Temperature
T
BIAS
Temperature
–55 to +125
Under Bias
T
STG
Storage
–55 to +125
Temperature
P
T
Power Dissipation
0.5
I
OUT
DC Output
Current
–60 to +120
Military
–0.5 to +7.0
Unit
V
CAPACITANCE
(T
A
= +25°C, f = 1.0MHz)
Symbol
Parameter
(1)
C
IN
Input
Capacitance
C
OUT
Output
Capacitance
Conditions
V
IN
= 0V
V
OUT
= 0V
Typ.
6
8
Max. Unit
10
pF
12
pF
2573 lnk 04
–0.5 to
V
CC
+0.5
–55 to +125
–65 to +135
–65 to +150
0.5
–60 to +120
V
°C
°C
°C
W
mA
NOTE:
1. This parameter is measured at characterization but not tested.
2573 lnk 03
NOTES:
1. Stresses greater than those listed under ABSOLUTE MAXIMUM RAT-
INGS may cause permanent damage to the device. This is a stress rating
only and functional operation of the device at these or any other conditions
above those indicated in the operational sections of this specification is
not implied. Exposure to absolute maximum rating conditions for
extended periods may affect reliability. No terminal voltage may exceed
V
CC
by +0.5V unless otherwise noted.
2. Input and V
CC
terminals only.
3. Outputs and I/O terminals only.
6.22
2
IDT54/74FCT827AT/BT/CT/DT, IDT54/74FCT2827AT/BT/CT
HIGH-PERFORMANCE CMOS BUFFERS
MILITARY AND COMMERCIAL TEMPERATURE RANGES
DC ELECTRICAL CHARACTERISTICS OVER OPERATING RANGE
Following Conditions Apply Unless Otherwise Specified:
Commercial: T
A
= 0°C to +70°C, V
CC
= 5.0V
±
5%; Military: T
A
= –55°C to +125°C, V
CC
= 5.0V
±
10%
Symbol
V
IH
V
IL
I
I H
I
I L
I
OZH
I
OZL
I
I
V
IK
V
H
I
CC
Parameter
Input HIGH Level
Input LOW Level
Input HIGH Current
(4)
Input LOW Current
(4)
High Impedance Output Current
(3-State Output pins)
(4)
Input HIGH Current
(4)
Clamp Diode Voltage
Input Hysteresis
Quiescent Power Supply Current
V
CC
= Min., I
IN
= –18mA
—
Test Conditions
(1)
Guaranteed Logic HIGH Level
Guaranteed Logic LOW Level
V
CC
= Max.
V
CC
= Max.
V
I
= 2.7V
V
I
= 0.5V
V
O
= 2.7V
V
O
= 0.5V
V
CC
= Max., V
I
= V
CC
(Max.)
Min.
2.0
—
—
—
—
—
—
—
—
—
Typ.
(2)
—
—
—
—
—
—
—
–0.7
200
0.01
Max.
—
0.8
±1
±1
±1
±1
±1
–1.2
—
1
Unit
V
V
µA
µA
µA
V
mV
mA
2573 lnk 05
V
CC
= Max., V
IN
= GND or V
CC
OUTPUT DRIVE CHARACTERISTICS FOR FCT827T
Symbol
V
OH
Parameter
Output HIGH Voltage
Test Conditions
(1)
V
CC
= Min.
I
OH
= –6mA MIL.
V
IN
= V
IH
or V
IL
I
OH
= –8mA COM'L.
I
OH
= –12mA MIL.
I
OH
= –15mA COM'L.
V
CC
= Min.
I
OL
= 32mA MIL.
V
IN
= V
IH
or V
IL
I
OL
= 48mA COM'L.
(3)
V
CC
= Max., V
O
= GND
Min.
2.4
2.0
—
–60
Typ.
(2)
3.3
3.0
0.3
–120
Max.
—
—
0.5
–225
Unit
V
V
V
mA
2573 lnk 06
V
OL
I
OS
Output LOW Voltage
Short Circuit Current
OUTPUT DRIVE CHARACTERISTICS FOR FCT2827T
Symbol
I
ODL
I
ODH
V
OH
V
OL
Parameter
Output LOW Current
Output HIGH Current
Output HIGH Voltage
Output LOW Voltage
Test Conditions
(1)
V
CC
= 5V, V
IN
= V
IH
or V
IL,
V
OUT
= 1.5V
(3)
V
CC
= 5V, V
IN
= V
IH
or V
IL,
V
OUT
= 1.5V
(3)
V
CC
= Min.
V
IN
= V
IH
or V
IL
V
CC
= Min.
V
IN
= V
IH
or V
IL
I
OH
= –12mA MIL.
I
OH
= –15mA COM'L.
I
OL
= 12mA
Min.
16
–16
2.4
—
Typ.
(2)
48
–48
3.3
0.3
Max.
—
—
—
0.50
Unit
mA
mA
V
V
2573 lnk 07
NOTES:
1. For conditions shown as Max. or Min., use appropriate value specified under Electrical Characteristics for the applicable device type.
2. Typical values are at Vcc = 5.0V, +25°C ambient.
3. Not more than one output should be shorted at one time. Duration of the short circuit test should not exceed one second.
4. The test limit for this parameter is
±5µA
at T
A
= –55°C.
6.22
3
IDT54/74FCT827AT/BT/CT/DT, IDT54/74FCT2827AT/BT/CT
HIGH-PERFORMANCE CMOS BUFFERS
MILITARY AND COMMERCIAL TEMPERATURE RANGES
POWER SUPPLY CHARACTERISTICS
Symbol
∆I
CC
I
CCD
Parameter
Quiescent Power Supply Current
TTL Inputs HIGH
Test Conditions
(1)
V
CC
= Max.
V
IN
= 3.4V
(3)
V
CC
= Max.
Outputs Open
OE
1
=
OE
2
= GND
One Input Toggling
50% Duty Cycle
V
CC
= Max.
Outputs Open
fi = 10MHz
50% Duty Cycle
Min.
—
—
—
Typ.
(2)
0.5
0.15
0.06
Max.
2.0
0.25
0.12
Unit
mA
mA/
MHz
Dynamic Power Supply Current
(4)
V
IN
= V
CC
FCT827T
V
IN
= GND
FCT2827T
I
C
Total Power Supply Current
(6)
V
IN
= V
CC
FCT827T
—
—
—
—
—
—
—
—
1.5
0.6
1.8
0.9
3.0
1.2
5.0
3.2
3.5
2.2
4.5
3.2
6.0
(5)
3.4
(5)
14.0
(5)
11.4
(5)
mA
V
IN
= GND FCT2827T
V
IN
= 3.4V
FCT827T
OE
1
=
OE
2
= GND
One Bit Toggling
V
CC
= Max.
Outputs Open
fi = 2.5MHz
50% Duty Cycle
V
IN
= GND FCT2827T
V
IN
= V
CC
FCT827T
V
IN
= GND FCT2827T
V
IN
= 3.4V
FCT827T
OE
1
=
OE
2
= GND
Eight Bits Toggling
V
IN
= GND FCT2827T
NOTES:
1. For conditions shown as Max. or Min., use appropriate value specified under Electrical Characteristics for the applicable device type.
2. Typical values are at V
CC
= 5.0V, +25°C ambient.
3. Per TTL driven input (V
IN
= 3.4V). All other inputs at V
CC
or GND.
4. This parameter is not directly testable, but is derived for use in Total Power Supply Calculations.
5. Values for these conditions are examples of the I
CC
formula. These limits are guaranteed but not tested.
6. I
C
= I
QUIESCENT
+ I
INPUTS
+ I
DYNAMIC
I
C
= I
CC
+
∆I
CC
D
H
N
T
+ I
CCD
(f
CP/
2 + f
i
N
i
)
I
CC
= Quiescent Current
∆I
CC
= Power Supply Current for a TTL High Input (V
IN
= 3.4V)
D
H
= Duty Cycle for TTL Inputs High
N
T
= Number of TTL Inputs at D
H
I
CCD
= Dynamic Current Caused by an Input Transition Pair (HLH or LHL)
f
CP
= Clock Frequency for Register Devices (Zero for Non-Register Devices)
f
i
= Input Frequency
N
i
= Number of Inputs at f
i
All currents are in milliamps and all frequencies are in megahertz.
2573 tbl 08
6.22
4
IDT54/74FCT827AT/BT/CT/DT, IDT54/74FCT2827AT/BT/CT
HIGH-PERFORMANCE CMOS BUFFERS
MILITARY AND COMMERCIAL TEMPERATURE RANGES
SWITCHING CHARACTERISTICS OVER OPERATING RANGE
FCT827AT/FCT2827AT
Com'l.
Symbol
Parameter
Condition
(1)
Min.
(2)
Max.
Mil.
Min.
(2)
Max.
FCT827BT/FCT2827BT
Com'l.
Min.
(2)
Max.
Mil.
Min.
(2)
Max.
Unit
t
PLH
t
PHL
Propagation Delay
D
I
to Y
I
t
PZH
t
PZL
Output Enable Time
OE
I
to Y
I
t
PHZ
t
PLZ
Output Disable Time
OE
I
to Y
I
C
L
= 50pF
R
L
= 500Ω
C
L
= 300pF
(3)
R
L
= 500Ω
C
L
= 50pF
R
L
= 500Ω
C
L
= 300pF
(3)
R
L
= 500Ω
C
L
= 5pF
(3)
R
L
= 500Ω
C
L
= 50pF
R
L
= 500Ω
1.5
1.5
1.5
1.5
1.5
1.5
8.0
15.0
12.0
23.0
9.0
10.0
1.5
1.5
1.5
1.5
1.5
1.5
9.0
17.0
13.0
25.0
9.0
10.0
1.5
1.5
1.5
1.5
1.5
1.5
5.0
13.0
8.0
15.0
6.0
7.0
1.5
1.5
1.5
1.5
1.5
1.5
6.5
14.0
9.0
16.0
7.0
8.0
ns
ns
ns
2573 tbl 09
FCT827CT/FCT2827CT
Com'l.
Symbol
Parameter
Condition
(1)
Min.
(2)
Max.
Mil.
Min.
(2)
Max.
Com'l.
Min.
(2)
FCT827DT
Mil.
Min.
(2)
Max.
Unit
Max.
t
PLH
t
PHL
Propagation Delay
D
I
to Y
I
t
PZH
t
PZL
Output Enable Time
OE
I
to Y
I
t
PHZ
t
PLZ
Output Disable Time
OE
I
to Y
I
C
L
= 50pF
R
L
= 500Ω
C
L
= 300pF
(3)
R
L
= 500Ω
C
L
= 50pF
R
L
= 500Ω
C
L
= 300pF
(3)
R
L
= 500Ω
C
L
= 5pF
(3)
R
L
= 500Ω
C
L
= 50pF
R
L
= 500Ω
1.5
1.5
1.5
1.5
1.5
1.5
4.4
10.0
7.0
14.0
5.7
6.0
1.5
1.5
1.5
1.5
1.5
1.5
5.0
11.0
8.0
15.0
6.7
7.0
1.5
1.5
1.5
1.5
1.5
1.5
3.8
7.5
5.0
9.0
4.3
4.3
—
—
—
—
—
—
—
—
—
—
—
—
ns
ns
ns
NOTES:
1. See test circuit and waveforms.
2. Minimum limits are guaranteed but not tested on Propagation Delays.
3. These conditions are guaranteed but not tested.
2573 tbl 10
6.22
5
嵌入式系统
京公网安备 11010802033920号
Copyright © 2005-2026 EEWORLD.com.cn, Inc. All rights reserved
电子工程世界
