RN2131MFV,RN2132MFV
TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT Process) (Bias Resistor built-in Transistor)
RN2131MFV, RN2132MFV
0.22±0.05
0.8±0.05
1.2±0.05
0.8±0.05
Simplify circuit design
Reduce a quantity of parts and manufacturing process
Complementary to RN1131MFV, RN1132MFV
0.4
With built-in bias resistors
1
2
3
0.4
0.5±0.05
Equivalent Circuit
VESM
JEDEC
JEITA
1: BASE
2: EMITTER
3: COLLECTOR
―
―
2-1L1A
Absolute Maximum Ratings
(Ta
=
25°C)
Characteristic
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Collector power dissipation
Junction temperature
Storage temperature range
Symbol
V
CBO
V
CEO
V
EBO
I
C
P
C
(Note1)
T
j
T
stg
Rating
−50
−50
−5
−100
150
150
−55
to 150
Unit
V
V
V
mA
mW
°C
°C
TOSHIBA
Weight : 1.5 mg (typ.)
Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the
significant change in temperature, etc.) may cause this product to decrease in the reliability significantly
even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute
maximum ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
(“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test
report and estimated failure rate, etc).
Note1
:
Mounted on FR4 board
(25.4
mm
×
25.4 mm
×
1.6 mmt)
Note:
Land Pattern Example
0.5
0.45
Unit : mm
1.15
0.4
0.45
0.4
0.4
Start of commercial production
2005-04
1
2014-03-01
0.13±0.05
0.32±0.05
Switching Applications
Inverter Circuit Applications
Interface Circuit Applications
Driver Circuit Applications
Unit: mm
1.2±0.05
RN2131MFV,RN2132MFV
Electrical Characteristics
(Ta = 25°C)
Characteristic
Collector cut-off current
Emitter cut-off current
DC current gain
Collector-emitter saturation voltage
Collector output capacitance
Input resistor
RN2131MFV
RN2132MFV
Symbol
I
CBO
I
EBO
h
FE
V
CE (sat)
C
ob
R1
Test
Circuit
―
―
―
―
―
―
Test Condition
V
CB
=
−50
V, I
E
= 0
V
EB
=
−5
V, I
C
= 0
V
CE
=
−5
V, I
C
=
−1
mA
I
C
=
−5
mA, I
B
=
−0.5
mA
V
CB
=
−10
V, I
E
= 0, f = 1 MH
z
―
Min
―
―
120
―
―
70
140
Typ.
―
―
―
−0.1
0.9
100
200
Max
−100
−100
400
−0.3
―
130
260
V
pF
kΩ
Unit
nA
nA
2
2014-03-01
RN2131MFV,RN2132MFV
IC - VI(ON)
-10000
COLLECTOR CURRENT IC (μA)
COMMON EMITTER
VCE = -0.2V
IC - VI(OFF)
RN2131MFV
-100
COLLECTOR CURRENT IC (mA)
RN2131MFV
-10
Ta = 100°C
-25
25
-1
-1000
-25
25
-100
Ta = 100°C
COMMON EMITTER
VCE = -5V
-10
0-0
-1
-2
-3
-4
-5
-0.1
-0.1
-1
-10
-100
INPUT VOLTAGE
VI(ON) ( V)
INPUT VOLTAGE
VI(OFF) ( V)
RN2131MFV
1000
hFE - IC
-1
COLLECTOR-EMITTER SATURATION
VOLTAGE VCE(sat) ( V)
RN2131MFV
VCE(sat) - IC
Ta = 100°C
DC CURRENT GAIN hFE
COMMON EMITTER
IC/IB = 10
-25
100
25
-0.1
Ta = 100°C
COMMON EMITTER
VCE = -5V
10
-0.1
-1
-10
-100
-25
-0.01
-0.1
25
-1
-10
-100
COLLECTOR CURRENT
IC (mA)
COLLECTOR CURRENT
IC (mA)
3
2014-03-01
RN2131MFV,RN2132MFV
RN2132MFV
-100
COLLECTOR CURRENT IC (mA)
IC - VI(ON)
-10000
COLLECTOR CURRENT IC (μA)
RN2132MFV
IC - VI(OFF)
COMMON EMITTER
VCE = -0.2V
-10
Ta = 100°C
-25
-1
25
-1000
-25
25
-100
Ta = 100°C
COMMON EMITTER
VCE = -5V
-10
0 -0
-2
-4
-6
-8
-10
-0.1
-0.1
-1
-10
-100
INPUT VOLTAGE
VI(ON) ( V)
INPUT VOLTAGE
VI(OFF) ( V)
RN2132MFV
1000
hFE - IC
-1
COLLECTOR-EMITTER SATURATION
VOLTAGE VCE(sat) ( V)
Ta = 100°C
RN2132MFV
VCE(sat) - IC
COMMON EMITTER
IC/IB = 10
DC CURRENT GAIN hFE
-25
100
25
-0.1
Ta = 100°C
COMMON EMITTER
VCE = -5V
10
-0.1
-1
-10
-100
-25
-0.01
-0.1
25
-1
COLLECTOR CURRENT
IC (mA)
-10
COLLECTOR CURRENT
IC (mA)
4
2014-03-01
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