MAC12D, MAC12M, MAC12N
Preferred Device
Triacs
Silicon Bidirectional Thyristors
Designed for high performance full−wave ac control applications
where high noise immunity and commutating di/dt are required.
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Features
•
•
•
•
•
•
•
•
Blocking Voltage to 800 Volts
On−State Current Rating of 12 Amperes RMS at 70°C
Uniform Gate Trigger Currents in Three Quadrants, Q1, Q2, and Q3
High Immunity to dv/dt − 250 V/ms Minimum at 125°C
High Commutating di/dt − 6.5 A/ms Minimum at 125°C
Industry Standard TO−220 AB Package
High Surge Current Capability − 100 Amperes
Pb−Free Packages are Available*
TRIACS
12 AMPERES RMS
400 thru 800 VOLTS
MT2
G
MT1
MARKING
DIAGRAM
MAXIMUM RATINGS
(T
J
= 25°C unless otherwise noted)
Rating
Peak Repetitive Off−State Voltage (Note 1)
(T
J
= −40 to 125°C, Sine Wave,
50 to 60 Hz, Gate Open)
MAC12D
MAC12M
MAC12N
On-State RMS Current
(All Conduction Angles; T
C
= 70°C)
Peak Non-Repetitive Surge Current
(One Full Cycle, 60 Hz, T
J
= 125°C)
Circuit Fusing Consideration (t = 8.33 ms)
Peak Gate Power
(Pulse Width
≤
1.0
ms,
T
C
= 80°C)
Average Gate Power
(t = 8.3 ms, T
C
= 80°C)
Operating Junction Temperature Range
Storage Temperature Range
Symbol
V
DRM,
V
RRM
400
600
800
I
T(RMS)
I
TSM
I
2
t
P
GM
P
G(AV)
T
J
T
stg
12
100
41
16
0.35
−40 to +125
−40 to +150
A
A
A
2
sec
W
x
A
Y
WW
G
= D, M, or N
= Assembly Location
= Year
= Work Week
= Pb−Free Package
Value
Unit
V
MAC12xG
AYWW
1
2
TO−220AB
CASE 221A−09
STYLE 4
3
PIN ASSIGNMENT
W
°C
°C
1
2
3
4
Main Terminal 1
Main Terminal 2
Gate
Main Terminal 2
Maximum ratings are those values beyond which device damage can occur.
Maximum ratings applied to the device are individual stress limit values (not
normal operating conditions) and are not valid simultaneously. If these limits are
exceeded, device functional operation is not implied, damage may occur and
reliability may be affected.
1. V
DRM
and V
RRM
for all types can be applied on a continuous basis. Blocking
voltages shall not be tested with a constant current source such that the
voltage ratings of the devices are exceeded.
ORDERING INFORMATION
Device
MAC12D
MAC12DG
MAC12M
MAC12MG
MAC12N
MAC12NG
Package
TO−220AB
TO−220AB
(Pb−Free)
TO−220AB
TO−220AB
(Pb−Free)
TO−220AB
TO−220AB
(Pb−Free)
Shipping
50 Units / Rail
50 Units / Rail
50 Units / Rail
50 Units / Rail
50 Units / Rail
50 Units / Rail
*For additional information on our Pb−Free strategy and soldering details, please
download the ON Semiconductor Soldering and Mounting Techniques
Reference Manual, SOLDERRM/D.
©
Semiconductor Components Industries, LLC, 2005
Preferred
devices are recommended choices for future use
and best overall value.
1
December, 2005 − Rev. 4
Publication Order Number:
MAC12/D
MAC12D, MAC12M, MAC12N
THERMAL CHARACTERISTICS
Characteristic
Thermal Resistance,
Junction−to−Case
Junction−to−Ambient
Symbol
R
qJC
R
qJA
T
L
Value
2.2
62.5
260
Unit
°C/W
°C
Maximum Lead Temperature for Soldering Purposes 1/8″ from Case for 10 Seconds
ELECTRICAL CHARACTERISTICS
(T
J
= 25°C unless otherwise noted; Electricals apply in both directions)
Characteristic
OFF CHARACTERISTICS
Peak Repetitive Blocking Current
(V
D
= Rated V
DRM
, V
RRM
, Gate Open)
ON CHARACTERISTICS
Peak On−State Voltage (Note 2) (I
TM
=
"17
A)
Gate Trigger Current (Continuous dc) (V
D
= 12 V, R
L
= 100
W)
MT2(+), G(+)
MT2(+), G(−)
MT2(−), G(−)
Hold Current (V
D
= 12 V, Gate Open, Initiating Current =
"150
mA)
Latch Current (V
D
= 24 V, I
G
= 35 mA)
MT2(+), G(+)
MT2(+), G(−)
MT2(−), G(−)
Gate Trigger Voltage (Continuous dc) (V
D
= 12 V, R
L
= 100
W)
MT2(+), G(+)
MT2(+), G(−)
MT2(−), G(−)
DYNAMIC CHARACTERISTICS
Rate of Change of Commutating Current
(V
D
= 400 V, ITM = 4.4A, Commutating dv/dt = 18 V/ms, Gate Open,
T
J
= 125°C, f = 250 Hz, No Snubber)
Critical Rate of Rise of Off−State Voltage
(V
D
= Rated V
DRM
, Exponential Waveform, Gate Open, T
J
= 125°C)
Repetitive Critical Rate of Rise of On-State Current
IPK = 50 A; PW = 40
msec;
diG/dt = 200 mA/msec; f = 60 Hz
2. Pulse Test: Pulse Width
≤
2.0 ms, Duty Cycle
≤
2%.
(di/dt)c
6.5
−
−
A/ms
V
TM
I
GT
5.0
5.0
5.0
I
H
I
L
−
−
−
V
GT
0.5
0.5
0.5
0.78
0.70
0.71
1.5
1.5
1.5
20
30
20
50
80
50
V
−
13
13
13
20
35
35
35
40
mA
mA
−
−
1.85
V
mA
T
J
= 25°C
T
J
= 125°C
I
DRM
,
I
RRM
−
−
−
−
0.01
2.0
mA
Symbol
Min
Typ
Max
Unit
dv/dt
di/dt
250
−
500
−
−
10
V/ms
A/ms
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MAC12D, MAC12M, MAC12N
Voltage Current Characteristic of Triacs
(Bidirectional Device)
+ Current
Quadrant 1
MainTerminal 2 +
Symbol
V
DRM
I
DRM
V
RRM
I
RRM
V
TM
I
H
Parameter
Peak Repetitive Forward Off State Voltage
Peak Forward Blocking Current
Peak Repetitive Reverse Off State Voltage
Peak Reverse Blocking Current
Maximum On State Voltage
Holding Current
Quadrant 3
MainTerminal 2 −
I
H
V
TM
I
RRM
at V
RRM
on state
I
H
V
TM
off state
+ Voltage
I
DRM
at V
DRM
Quadrant Definitions for a Triac
MT2 POSITIVE
(Positive Half Cycle)
+
(+) MT2
(+) MT2
Quadrant II
(−) I
GT
GATE
MT1
REF
(+) I
GT
GATE
MT1
REF
Quadrant I
I
GT
−
(−) MT2
(−) MT2
+ I
GT
Quadrant III
(−) I
GT
GATE
MT1
REF
(+) I
GT
GATE
MT1
REF
Quadrant IV
−
MT2 NEGATIVE
(Negative Half Cycle)
All polarities are referenced to MT1.
With in−phase signals (using standard AC lines) quadrants I and III are used.
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3
MAC12D, MAC12M, MAC12N
100
VGT, GATE TRIGGER VOLTAGE (VOLT)
5 20 35 50 65 80 95
T
J
, JUNCTION TEMPERATURE (°C)
110
125
IGT, GATE TRIGGER CURRENT (mA)
1.10
1.00 Q3
0.90 Q1
0.80 Q2
0.70
0.60
0.50
0.40
−40 −25 −10
5
20 35 50 65 80 95
T
J
, JUNCTION TEMPERATURE (°C)
110
125
Q3
Q2
Q1
10
1
−40 −25 −10
Figure 1. Typical Gate Trigger Current
versus Junction Temperature
100
100
Figure 2. Typical Gate Trigger Voltage
versus Junction Temperature
LATCHING CURRENT (mA)
HOLDING CURRENT (mA)
MT2 POSITIVE
Q2
Q1
10
Q3
10
MT2 NEGATIVE
1
−40 −25 −10
5
20 35 50 65 80 95
T
J
, JUNCTION TEMPERATURE (°C)
110
125
1
−40 −25 −10
5
20 35 50
65 80 95
T
J
, JUNCTION TEMPERATURE (°C)
110 125
Figure 3. Typical Holding Current
versus Junction Temperature
P(AV), AVERAGE POWER DISSIPATION (WATTS)
125
TC, CASE TEMPERATURE ( C)
°
120°, 90°, 60°, 30°
20
18
16
14
12
10
8
6
4
2
0
0
Figure 4. Typical Latching Current
versus Junction Temperature
DC
180°
120°
110
95
180°
80
DC
65
0
2
4
6
8
10
I
T(RMS)
, RMS ON-STATE CURRENT (AMP)
12
60°
30°
90°
2
4
6
8
10
I
T(AV)
, AVERAGE ON-STATE CURRENT (AMP)
12
Figure 5. Typical RMS Current Derating
Figure 6. On-State Power Dissipation
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4
MAC12D, MAC12M, MAC12N
I T, INSTANTANEOUS ON-STATE CURRENT (AMP)
r(t), TRANSIENT THERMAL RESISTANCE
(NORMALIZED)
100
TYPICAL @
T
J
= 25°C
1
MAXIMUM @ T
J
= 125°C
10
0.1
1
MAXIMUM @ T
J
= 25°C
0.01
0.1
1
10
100
t, TIME (ms)
1000
10000
Figure 8. Typical Thermal Response
0.1
0
0.5
1
1.5
2
2.5
3
3.5
4
4.5
V
T
, INSTANTANEOUS ON-STATE VOLTAGE (VOLTS)
5
Figure 7. Typical On-State Characteristics
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