MAC212A8, MAC212A10
Preferred Device
Triacs
Silicon Bidirectional Thyristors
Designed primarily for full-wave ac control applications, such as
light dimmers, motor controls, heating controls and power supplies; or
wherever full-wave silicon gate controlled solid-state devices are
needed. Triac type thyristors switch from a blocking to a conducting
state for either polarity of applied anode voltage with positive or
negative gate triggering.
Features
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•
Blocking Voltage to 800 Volts
•
All Diffused and Glass Passivated Junctions for Greater Parameter
Uniformity and Stability
•
Small, Rugged, Thermowatt Construction for Low Thermal
Resistance, High Heat Dissipation and Durability
•
Gate Triggering Guaranteed in Four Modes
•
Pb−Free Packages are Available*
MAXIMUM RATINGS
(T
J
= 25°C unless otherwise noted)
Rating
Peak Repetitive Off−State Voltage (Note 1)
(T
J
= −40 to +125°C, Sine Wave 50 to 60 Hz,
Gate Open)
MAC212A8
MAC212A10
On-State RMS Current (T
C
= +85°C)
Full Cycle Sine Wave 50 to 60 Hz
Peak Non−repetitive Surge Current (One
Full Cycle Sine Wave, 60 Hz, T
C
= +25°C)
Preceded and followed by rated current
Circuit Fusing Considerations (t = 8.3 ms)
Peak Gate Power
(T
C
= +85°C, Pulse Width = 10
ms)
Average Gate Power
(T
C
= +85°C, t = 8.3 ms)
Peak Gate Current
(T
C
= +85°C, Pulse Width = 10
ms)
Operating Junction Temperature Range
Storage Temperature Range
Symbol
V
DRM,
V
RRM
600
800
I
T(RMS)
I
TSM
12
100
A
A
Value
Unit
V
TRIACS
12 AMPERES RMS
600 thru 800 VOLTS
MT2
G
MT1
MARKING
DIAGRAM
MAC212AxG
AYWW
TO−220AB
CASE 221A−07
STYLE 4
x
A
Y
WW
G
= 8 or 10
= Assembly Location
= Year
= Work Week
= Pb−Free Package
1
2
3
I
2
t
P
GM
P
G(AV)
I
GM
T
J
T
stg
40
20
0.35
2.0
−40 to +125
−40 to +150
A
2
s
W
PIN ASSIGNMENT
W
A
°C
°C
1
2
3
4
Main Terminal 1
Main Terminal 2
Gate
Main Terminal 2
Maximum ratings are those values beyond which device damage can occur.
Maximum ratings applied to the device are individual stress limit values (not
normal operating conditions) and are not valid simultaneously. If these limits are
exceeded, device functional operation is not implied, damage may occur and
reliability may be affected.
1. V
DRM
and V
RRM
for all types can be applied on a continuous basis. Blocking
voltages shall not be tested with a constant current source such that the
voltage ratings of the devices are exceeded.
ORDERING INFORMATION
Device
MAC212A8D
MAC212A8DG
MAC212A10
MAC212A10G
Package
TO−220AB
TO−220AB
(Pb−Free)
TO−220AB
TO−220AB
(Pb−Free)
Shipping
500 Units / Box
500 Units / Box
500 Units / Box
500 Units / Box
*For additional information on our Pb−Free strategy and soldering details, please
download the ON Semiconductor Soldering and Mounting Techniques
Reference Manual, SOLDERRM/D.
©
Semiconductor Components Industries, LLC, 2005
Preferred
devices are recommended choices for future use
and best overall value.
1
December, 2005 − Rev. 2
Publication Order Number:
MAC212A8/D
MAC212A8, MAC212A10
THERMAL CHARACTERISTICS
Characteristic
Thermal Resistance,
r
Junction−to−Case
Junction−to−Ambient
Symbol
R
qJC
R
qJA
T
L
Value
2.0
62.5
260
Unit
°C/W
°C
Maximum Lead Temperature for Soldering Purposes 1/8″ from Case for 10 Secs
ELECTRICAL CHARACTERISTICS
(T
C
= 25°C unless otherwise noted; Electricals apply in both directions)
Characteristic
OFF CHARACTERISTICS
Peak Repetitive Blocking Current
(V
D
= Rated V
DRM
, V
RRM
; Gate Open)
T
J
= 25°C
T
J
= +125°C
I
DRM
,
I
RRM
−
−
−
−
10
2.0
mA
mA
Symbol
Min
Typ
Max
Unit
ON CHARACTERISTICS
Peak On-State Voltage
I
TM
=
"17
A Peak; Pulse Width = 1 to 2 ms, Duty Cycle
p
2%
Gate Trigger Current (Continuous dc)
(Main Terminal Voltage = 12 Vdc, R
L
= 100
W)
MT2(+), G(+)
MT2(+), G(−)
MT2(−), G(−)
MT2(−), G(+)
Gate Trigger Voltage (Continuous dc)
(Main Terminal Voltage = 12 Vdc, R
L
= 100
W)
MT2(+), G(+)
MT2(+), G(−)
MT2(−), G(−)
MT2(−), G(+)
Gate Non−Trigger Voltage (Continuous dc)
(Main Terminal Voltage = 12 V, R
L
= 100
W,
T
J
= +125°C)
All Four Quadrants
Holding Current
(Main Terminal Voltage = 12 Vdc, Gate Open,
Initiating Current =
"200
mA)
Turn-On Time
(V
D
= Rated V
DRM
, I
TM
= 17 A, I
GT
= 120 mA,
Rise Time = 0.1
ms,
Pulse Width = 2
ms)
DYNAMIC CHARACTERISTICS
Critical Rate of Rise of Commutation Voltage
(V
D
= Rated V
DRM
, I
TM
= 17 A, Commutating di/dt = 6.1 A/ms,
Gate Unenergized, T
C
= +85°C)
Critical Rate of Rise of Off-State Voltage
(V
D
= Rated V
DRM
, Exponential Voltage Rise, Gate Open, T
C
= +85°C)
dv/dt
(c)
−
5.0
−
V/ms
V
TM
I
GT
−
−
−
−
V
GT
−
−
−
−
V
GD
0.2
I
H
−
−
6.0
−
50
mA
0.9
0.9
1.1
1.4
2.0
2.0
2.0
2.5
V
12
12
20
35
50
50
50
75
V
−
1.3
1.75
V
mA
t
gt
−
1.5
−
ms
dv/dt
−
100
−
V/ms
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2
MAC212A8, MAC212A10
Voltage Current Characteristic of Triacs
(Bidirectional Device)
+ Current
Quadrant 1
MainTerminal 2 +
Symbol
V
DRM
I
DRM
V
RRM
I
RRM
V
TM
I
H
Parameter
Peak Repetitive Forward Off State Voltage
Peak Forward Blocking Current
Peak Repetitive Reverse Off State Voltage
Peak Reverse Blocking Current
Maximum On State Voltage
Holding Current
Quadrant 3
MainTerminal 2 −
I
H
V
TM
I
RRM
at V
RRM
on state
I
H
V
TM
off state
+ Voltage
I
DRM
at V
DRM
Quadrant Definitions for a Triac
MT2 POSITIVE
(Positive Half Cycle)
+
(+) MT2
(+) MT2
Quadrant II
(−) I
GT
GATE
MT1
REF
(+) I
GT
GATE
MT1
REF
Quadrant I
I
GT
−
(−) MT2
(−) MT2
+ I
GT
Quadrant III
(−) I
GT
GATE
MT1
REF
(+) I
GT
GATE
MT1
REF
Quadrant IV
−
MT2 NEGATIVE
(Negative Half Cycle)
All polarities are referenced to MT1.
With in−phase signals (using standard AC lines) quadrants I and III are used.
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MAC212A8, MAC212A10
TC , MAXIMUM ALLOWABLE CASE TEMPERATURE (
°
C)
PD(AV), AVERAGE POWER DISSIPATION (WATT)
125
28
24
20
16
12
8.0
4.0
0
0
2.0
4.0
6.0
8.0
10
12
14
α
α
= CONDUCTION ANGLE
α
dc
α
= 180°
90°
60°
30°
115
α
= 30°
α
α
85
α
= CONDUCTION ANGLE
60°
90°
180°
dc
105
95
75
0
2.0
4.0
6.0
8.0
10
12
14
I
T(RMS)
, RMS ON-STATE CURRENT (AMP)
I
T(RMS)
, RMS ON-STATE CURRENT (AMP)
Figure 1. Current Derating
Figure 2. Power Dissipation
100
IT, INSTANTANEOUS ON-STATE CURRENT (AMPS)
50
20
10
5.0
T
J
= 25°C
T
J
= 125°C
100
ITSM , PEAK SURGE CURRENT (AMP)
80
60
40
CYCLE
T
C
= 70°C
f = 60 Hz
Surge is preceded and followed by rated current
2.0
3.0
NUMBER OF CYCLES
5.0
7.0
10
20
0
1.0
2.0
1.0
0.5
0.2
0.1
0.4 0.8 1.2 1.6 2.0 2.4 2.8 3.2 3.6 4.0 4.4
V
T
, INSTANTANEOUS ON-STATE VOLTAGE (VOLTS)
Figure 4. Maximum Non−Repetitive Surge Current
VGT , GATE TRIGGER VOLTAGE (NORMALIZED)
2.0
1.6
MAIN TERMINAL VOLTAGE = 12 Vdc
ALL QUADRANTS
Figure 3. Maximum On−State Voltage
Characteristics
1.2
0.8
0.4
0
−60
−40
−20
0
20
40
60
80
T
C
, CASE TEMPERATURE (°C)
Figure 5. Typical Gate Trigger Voltage
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4
MAC212A8, MAC212A10
I GT, GATE TRIGGER CURRENT (NORMALIZED)
2.0
IH , HOLDING CURRENT (NORMALIZED)
MAIN TERMINAL VOLTAGE = 12 Vdc
ALL QUADRANTS
2.8
2.4
2.0
1.6
1.2
0.8
0.4
0
−60
−40
−20
0
20
40
60
80
MAIN TERMINAL VOLTAGE = 12 Vdc
ALL QUADRANTS
1.6
1.2
0.8
0.4
0
−60
−40
−20
0
20
40
60
80
T
C
, CASE TEMPERATURE (°C)
T
C
, CASE TEMPERATURE (°C)
Figure 6. Typical Gate Trigger Current
r(t), TRANSIENT THERMAL RESISTANCE (NORMALIZED)
Figure 7. Typical Holding Current
1.0
0.5
0.2
Z
qJC(t)
= r(t)
•
R
qJC
0.1
0.05
0.02
0.01
0.1
0.2
0.5
1.0
2.0
5.0
20
50
t, TIME (ms)
100
200
500
1.0 k
2.0 k
5.0 k
10 k
Figure 8. Thermal Response
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