RN4983AFS
TOSHIBA Transistor Silicon NPN/PNP Epitaxial Type
(PCT Process) (Transistor with Built-in Bias Resistor)
RN4983AFS
Switching, Inverter Circuit, Interface Circuit and
Driver Circuit Applications
1.0±0.05
Unit: mm
•
•
0.35 0.35
Incorporating a bias resistor into the transistor reduces the number of
parts, so enabling the manufacture of ever more compact equipment and
lowering assembly cost.
1.0±0.05
0.7±0.05
1
2
3
6
5
4
0.1±0.05
Q1
C
Q2
C
0.48
-0.04
+0.02
Equivalent Circuit and Bias Resistor Values
B
R1
R2
B
R1
R2
fS6
JEDEC
JEITA
1. EMITTER1
2. BASE1
3. COLLECTOR2
4. EMITTER2
5. BASE2
6. COLLECTOR1
(E1)
(B1)
(C2)
(E2)
(B2)
(C1)
E
E
―
―
2-1F1D
R1: 22 kΩ
R2: 22 kΩ
(Q1, Q2 common)
TOSHIBA
Weight: 0.001g (typ.)
Equivalent Circuit
(top view)
6
5
4
Marking
Type name
Q1
Q2
V2
1
2
3
1
2007-11-01
0.15±0.05
Two devices are incorporated into a fine-pitch, small-mold (6-pin)
package.
0.1±0.05
0.8±0.05
0.1±0.05
RN4983AFS
Absolute Maximum Ratings
(Ta =25°C) (Q1)
Characteristic
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Symbol
V
CBO
V
CEO
V
EBO
I
C
Rating
50
50
10
80
Unit
V
V
V
mA
Absolute Maximum Ratings
(Ta = 25°C) (Q2)
Characteristic
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Symbol
V
CBO
V
CEO
V
EBO
I
C
Rating
−50
−50
−10
−80
Unit
V
V
V
mA
Absolute Maximum Ratings
(Ta = 25°C) (Q1, Q2 common)
Characteristic
Collector power dissipation
Junction temperature
Storage temperature range
Symbol
P
C
(Note 1)
T
j
T
stg
Rating
50
150
−55~150
Unit
mW
°C
°C
Note:
Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the
significant change in temperature, etc.) may cause this product to decrease in the reliability significantly
even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute
maximum ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
(“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test
report and estimated failure rate, etc).
Note 1: Total rating
2
2007-11-01
RN4983AFS
Electrical Characteristics
(Ta = 25°C) (Q1)
Characteristic
Collector cutoff current
Emitter cutoff current
DC current gain
Collector-emitter saturation voltage
Input voltage (ON)
Input voltage (OFF)
Collector output capacitance
Symbol
I
CBO
I
CEO
I
EBO
h
FE
V
CE (sat)
V
I (ON)
V
I (OFF)
C
ob
Test Condition
V
CB
=
50 V, I
E
=
0
V
CE
=
50 V, I
B
=
0
V
EB
=
10 V, I
C
=
0
V
CE
=
5 V, I
C
=
10 mA
I
C
=
5 mA, I
B
=
0.25 mA
V
CE
=
0.2 V, I
C
=
5 mA
V
CE
=
5 V, I
C
=
0.1 mA
V
CB
=
10 V, I
E
=
0, f
=
1 MHz
Min
⎯
⎯
0.18
70
⎯
1.3
0.8
⎯
Typ.
⎯
⎯
⎯
⎯
⎯
⎯
⎯
0.7
Max
100
500
0.29
⎯
0.15
3.5
1.5
⎯
V
V
V
pF
Unit
nA
mA
Electrical Characteristics
(Ta = 25°C) (Q2)
Characteristic
Collector cutoff current
Emitter cutoff current
DC current gain
Collector-emitter saturation voltage
Input voltage (ON)
Input voltage (OFF)
Collector output capacitance
Symbol
I
CBO
I
CEO
I
EBO
h
FE
V
CE (sat)
V
I (ON)
V
I (OFF)
C
ob
Test Condition
V
CB
= −50
V, I
E
=
0
V
CE
= −50
V, I
B
=
0
V
EB
= −10
V, I
C
=
0
V
CE
= −5
V, I
C
= −10
mA
I
C
= −5
mA, I
B
= −0.25
mA
V
CE
= −0.2
V, I
C
= −5
mA
V
CE
= −5
V, I
C
= −0.1
mA
V
CB
= −10
V, I
E
=
0, f
=
1 MHz
Min
⎯
⎯
−0.18
70
⎯
−1.3
−0.8
⎯
Typ.
⎯
⎯
⎯
⎯
⎯
⎯
⎯
0.9
Max
−100
−500
−0.29
⎯
−0.15
−3.5
−1.5
⎯
V
V
V
pF
Unit
nA
mA
Electrical Characteristics
(Ta = 25°C) (Q1, Q2 common)
Characteristic
Input resistor
Resistor ratio
Symbol
R1
R1/R2
Test Condition
⎯
⎯
Min
17.6
0.8
Typ.
22
1.0
Max
26.4
1.2
Unit
kΩ
3
2007-11-01
RN4983AFS
Q1
IC - VI (ON)
100
COLLECTOR CURRENT IC (mA)
COMMON EMMITER
VCE = 0.2 V
10000
COLLECTOR CURRENT IC (uA)
COMMON EMMITER
VCE= 5V
IC - VI (OFF)
10
Ta = 100°C
25
1
-25
1000
Ta = 100°C
25
-25
100
0.1
0.1
1
10
INPUT VOLTAGE
VI (ON) (V)
100
10
0.4
0.8
1.2
1.6
2
2.4
INPUT VOLTAGE
VI (OFF) (V)
hFE - IC
1000
COLLECTOR-EMITTER SATURATION
VOLTAGE VCE (sat) ( V)
COMMON EMMITER
VCE= 5V
DC CURRENT GAIN
hFE
1
VCE (sat) - IC
COMMON EMMITER
IC / IB = 20
Ta = 100°C
100
-25
25
Ta = 100°C
0.1
-25
25
10
1
10
COLLECTOR CURRENT
IC (mA)
100
0.01
1
10
COLLECTOR CURRENT
IC (mA)
100
4
2007-11-01
RN4983AFS
Q2
IC - VI (ON)
-100
COLLECTOR CURRENT IC (mA)
COMMON EMITTER
VCE = -0.2 V
-10000
COMMON EMITTER
VCE = -5 V
IC - VI (OFF)
-10
COLLECTOR CURRENT IC (uA)
-1000
25
Ta = 100°C
-100
-25
Ta = 100°C
-1
25
-25
-0.1
-0.1
-1
-10
-100
-10
-0.2
-0.6
-1
-1.4
-1.8
-2.2
INPUT VOLTAGE
VI (ON) (V)
INPUT VOLTAGE
VI (OFF) (V)
hFE- IC
1000
COLLECTOR-EMITTER SATURATION
VOLTAGE VCE (sat) ( V)
COMMON EMITTER
VCE = -5 V
DC CURRENT GAIN
hFE
-1
VCE (sat) - IC
COMMON EMITTER
IC / IB = 20
Ta = 100°C
100
-25
25
-0.1
Ta = 100°C
-25
25
10
-1
-10
COLLECTOR CURRENT
IC (mA)
-100
-0.01
-1
-10
COLLECTOR CURRENT
IC (mA)
-100
5
2007-11-01
京公网安备 11010802033920号
Copyright © 2005-2026 EEWORLD.com.cn, Inc. All rights reserved
电子工程世界
