电子工程世界电子工程世界电子工程世界

关键词

搜索

型号

搜索

IDT72131L50CB

产品描述FIFO, 2KX9, 18ns, Synchronous, CMOS, CDIP28, 0.600 INCH, SIDE BRAZED, CERAMIC, DIP-28
产品类别存储    存储   
文件大小127KB,共13页
制造商IDT (Integrated Device Technology)
下载文档 详细参数 选型对比 全文预览

IDT72131L50CB概述

FIFO, 2KX9, 18ns, Synchronous, CMOS, CDIP28, 0.600 INCH, SIDE BRAZED, CERAMIC, DIP-28

IDT72131L50CB规格参数

参数名称属性值
是否Rohs认证不符合
零件包装代码DIP
包装说明0.600 INCH, SIDE BRAZED, CERAMIC, DIP-28
针数28
Reach Compliance Codenot_compliant
ECCN代码EAR99
最长访问时间18 ns
其他特性RETRANSMIT
最大时钟频率 (fCLK)15.4 MHz
周期时间25 ns
JESD-30 代码R-CDIP-T28
JESD-609代码e0
长度35.687 mm
内存密度18432 bit
内存集成电路类型OTHER FIFO
内存宽度9
功能数量1
端子数量28
字数2048 words
字数代码2000
工作模式SYNCHRONOUS
最高工作温度125 °C
最低工作温度-55 °C
组织2KX9
输出特性3-STATE
可输出NO
封装主体材料CERAMIC, METAL-SEALED COFIRED
封装代码DIP
封装等效代码DIP28,.6
封装形状RECTANGULAR
封装形式IN-LINE
并行/串行SERIAL
电源5 V
认证状态Not Qualified
筛选级别38535Q/M;38534H;883B
座面最大高度4.826 mm
最大待机电流0.004 A
最大压摆率0.16 mA
最大供电电压 (Vsup)5.5 V
最小供电电压 (Vsup)4.5 V
标称供电电压 (Vsup)5 V
表面贴装NO
技术CMOS
温度等级MILITARY
端子面层Tin/Lead (Sn/Pb)
端子形式THROUGH-HOLE
端子节距2.54 mm
端子位置DUAL
宽度15.24 mm
Base Number Matches1

文档预览

下载PDF文档
CMOS PARALLEL-TO-SERIAL FIFO
2048
X
9
4096
X
9
Integrated Device Technology, Inc.
IDT72131
IDT72141
FEATURES:
• 35ns parallel port access time, 45ns cycle time
• 50MHz serial port shift rate
• Expandable in depth and width with no external
components
• Programmable word lengths including 7-9, 16-18, 32-36
bit using Flexishift™ serial output without using any
additional components
• Multiple status flags: Full, Almost-Full (1/8 from full),
Half-Full, Almost Empty (1/8 from empty), and Empty
• Asynchronous and simultaneous read and write
operations
• Dual-Port zero fall-through architecture
• Retransmit capability in single device mode
• Produced with high-performance, low power CMOS
technology
• Available in 28-pin ceramic and plastic DIP.
• Military product compliant to MlL-STD-883, Class B
DESCRIPTION:
The IDT72131/72141 are high-speed, low power parallel-
to-serial FIFOs. These FIFOs are ideally suited to serial
communications applications, tape/disk controllers, and local
area networks (LANs). The IDT72131/72141 can be config-
ured with the IDTs serial-to-parallel FIFOs (IDT72132/72142)
for bidirectional serial data buffering.
The FIFO has a 9-bit parallel input port and a serial output
port. Wider and deeper parallel-to-serial data buffers can be
built using multiple IDT72131/72141 chips. IDTs unique
Flexishift serial expansion logic (SOX,
NR
) makes width
expansion possible with no additional components. These
FIFOs will expand to a variety of word widths including 8, 9, 16,
and 32 bits. The IDT72131/141 can also be directly connected
for depth expansion.
Five flags are provided to monitor the FIFO. The full and
empty flags prevent any FIFO data overflow or underflow
conditions. The almost-full (7/8), half-full, and almost empty
(1/8) flags signal memory utilization within the FIFO.
The IDT72131/72141 is fabricated using IDTs high-speed
submicron CMOS technology. Military grade product is manu-
factured in compliance with the latest revision of MIL-STD-
883, Class B.
FUNCTIONAL BLOCK DIAGRAM
D
0
-D
8
PIN CONFIGURATION
W
D
4
D
3
D
2
D
1
NEXT READ
POINTER
NR
1
2
3
4
5
6
7
8
9
10
11
12
13
14
28
27
26
25
24
Vcc
D
5
D
6
D
7
D
8
EF
FLAG
LOGIC
AEF
/HF
FF
WRITE
POINTER
RAM ARRAY
2048 x 9
4096 x 9
W
D
0
XI
SOX
SOCP
SO
P28-1
&
C28-3
23
22
21
20
19
18
17
16
15
FL/RT
RS
EF
XO/HF
GND
Q
8
Q
7
Q
6
RS
FL/RT
RESET LOGIC
SOCP
EXPANSION
LOGIC
SERIAL OUTPUT
CIRCUITRY
SOX
SO
AEF
FF
Q
4
GND
XI
XO/
NR
Q
4
Q
6
Q
7
Q
8
2751 drw 01
DIP
TOP VIEW
2751 drw 02a
The IDT logo is a registered trademark of Integrated Device Technology, Inc.
MILITARY AND COMMERCIAL TEMPERATURE RANGES
©1996
Integrated Device Technology, Inc.
DECEMBER 1995
DSC-2751/5
5.35
1

IDT72131L50CB相似产品对比

IDT72131L50CB IDT72141L35CB IDT72141L35C IDT72141L40CB IDT72131L40CB IDT72141L40P IDT72131L35C IDT72131L50C IDT72141L50C IDT72141L50CB
描述 FIFO, 2KX9, 18ns, Synchronous, CMOS, CDIP28, 0.600 INCH, SIDE BRAZED, CERAMIC, DIP-28 FIFO, 4KX9, 35ns, Asynchronous, CMOS, CDIP28 FIFO, 4KX9, 18ns, Synchronous, CMOS, CDIP28, 0.600 INCH, SIDE BRAZED, CERAMIC, DIP-28 FIFO, 4KX9, 18ns, Synchronous, CMOS, CDIP28, 0.600 INCH, SIDE BRAZED, CERAMIC, DIP-28 FIFO, 2KX9, 18ns, Synchronous, CMOS, CDIP28, 0.600 INCH, SIDE BRAZED, CERAMIC, DIP-28 FIFO, 4KX9, 40ns, Asynchronous, CMOS, PDIP28 FIFO, 2KX9, 18ns, Synchronous, CMOS, CDIP28, 0.600 INCH, SIDE BRAZED, CERAMIC, DIP-28 FIFO, 2KX9, 18ns, Synchronous, CMOS, CDIP28, 0.600 INCH, SIDE BRAZED, CERAMIC, DIP-28 FIFO, 4KX9, 18ns, Synchronous, CMOS, CDIP28, 0.600 INCH, SIDE BRAZED, CERAMIC, DIP-28 FIFO, 4KX9, 18ns, Synchronous, CMOS, CDIP28, 0.600 INCH, SIDE BRAZED, CERAMIC, DIP-28
是否Rohs认证 不符合 不符合 不符合 不符合 不符合 不符合 不符合 不符合 不符合 不符合
Reach Compliance Code not_compliant not_compliant not_compliant not_compliant not_compliant not_compliant not_compliant not_compliant not_compliant not_compliant
ECCN代码 EAR99 EAR99 EAR99 EAR99 EAR99 EAR99 EAR99 EAR99 EAR99 EAR99
最长访问时间 18 ns 35 ns 18 ns 18 ns 18 ns 40 ns 18 ns 18 ns 18 ns 18 ns
最大时钟频率 (fCLK) 15.4 MHz 22.2 MHz 22.2 MHz 20 MHz 20 MHz 20 MHz 22.2 MHz 15.4 MHz 15.4 MHz 15.4 MHz
JESD-30 代码 R-CDIP-T28 R-XDIP-T28 R-CDIP-T28 R-CDIP-T28 R-CDIP-T28 R-PDIP-T28 R-CDIP-T28 R-CDIP-T28 R-CDIP-T28 R-CDIP-T28
JESD-609代码 e0 e0 e0 e0 e0 e0 e0 e0 e0 e0
内存密度 18432 bit 36864 bit 36864 bit 36864 bit 18432 bit 36864 bit 18432 bit 18432 bit 36864 bit 36864 bit
内存集成电路类型 OTHER FIFO OTHER FIFO OTHER FIFO OTHER FIFO OTHER FIFO OTHER FIFO OTHER FIFO OTHER FIFO OTHER FIFO OTHER FIFO
内存宽度 9 9 9 9 9 9 9 9 9 9
端子数量 28 28 28 28 28 28 28 28 28 28
字数 2048 words 4096 words 4096 words 4096 words 2048 words 4096 words 2048 words 2048 words 4096 words 4096 words
字数代码 2000 4000 4000 4000 2000 4000 2000 2000 4000 4000
工作模式 SYNCHRONOUS ASYNCHRONOUS SYNCHRONOUS SYNCHRONOUS SYNCHRONOUS ASYNCHRONOUS SYNCHRONOUS SYNCHRONOUS SYNCHRONOUS SYNCHRONOUS
最高工作温度 125 °C 125 °C 70 °C 125 °C 125 °C 70 °C 70 °C 70 °C 70 °C 125 °C
组织 2KX9 4KX9 4KX9 4KX9 2KX9 4KX9 2KX9 2KX9 4KX9 4KX9
封装主体材料 CERAMIC, METAL-SEALED COFIRED CERAMIC CERAMIC, METAL-SEALED COFIRED CERAMIC, METAL-SEALED COFIRED CERAMIC, METAL-SEALED COFIRED PLASTIC/EPOXY CERAMIC, METAL-SEALED COFIRED CERAMIC, METAL-SEALED COFIRED CERAMIC, METAL-SEALED COFIRED CERAMIC, METAL-SEALED COFIRED
封装代码 DIP DIP DIP DIP DIP DIP DIP DIP DIP DIP
封装等效代码 DIP28,.6 DIP28,.6 DIP28,.6 DIP28,.6 DIP28,.6 DIP28,.6 DIP28,.6 DIP28,.6 DIP28,.6 DIP28,.6
封装形状 RECTANGULAR RECTANGULAR RECTANGULAR RECTANGULAR RECTANGULAR RECTANGULAR RECTANGULAR RECTANGULAR RECTANGULAR RECTANGULAR
封装形式 IN-LINE IN-LINE IN-LINE IN-LINE IN-LINE IN-LINE IN-LINE IN-LINE IN-LINE IN-LINE
电源 5 V 5 V 5 V 5 V 5 V 5 V 5 V 5 V 5 V 5 V
认证状态 Not Qualified Not Qualified Not Qualified Not Qualified Not Qualified Not Qualified Not Qualified Not Qualified Not Qualified Not Qualified
最大待机电流 0.004 A 0.004 A 0.002 A 0.004 A 0.004 A 0.002 A 0.002 A 0.002 A 0.002 A 0.004 A
最大压摆率 0.16 mA 0.16 mA 0.14 mA 0.16 mA 0.16 mA 0.14 mA 0.14 mA 0.14 mA 0.14 mA 0.16 mA
标称供电电压 (Vsup) 5 V 5 V 5 V 5 V 5 V 5 V 5 V 5 V 5 V 5 V
表面贴装 NO NO NO NO NO NO NO NO NO NO
技术 CMOS CMOS CMOS CMOS CMOS CMOS CMOS CMOS CMOS CMOS
温度等级 MILITARY MILITARY COMMERCIAL MILITARY MILITARY COMMERCIAL COMMERCIAL COMMERCIAL COMMERCIAL MILITARY
端子面层 Tin/Lead (Sn/Pb) Tin/Lead (Sn/Pb) Tin/Lead (Sn/Pb) Tin/Lead (Sn/Pb) Tin/Lead (Sn/Pb) Tin/Lead (Sn85Pb15) Tin/Lead (Sn/Pb) Tin/Lead (Sn/Pb) Tin/Lead (Sn/Pb) Tin/Lead (Sn/Pb)
端子形式 THROUGH-HOLE THROUGH-HOLE THROUGH-HOLE THROUGH-HOLE THROUGH-HOLE THROUGH-HOLE THROUGH-HOLE THROUGH-HOLE THROUGH-HOLE THROUGH-HOLE
端子节距 2.54 mm 2.54 mm 2.54 mm 2.54 mm 2.54 mm 2.54 mm 2.54 mm 2.54 mm 2.54 mm 2.54 mm
端子位置 DUAL DUAL DUAL DUAL DUAL DUAL DUAL DUAL DUAL DUAL
零件包装代码 DIP - DIP DIP DIP - DIP DIP DIP DIP
包装说明 0.600 INCH, SIDE BRAZED, CERAMIC, DIP-28 - 0.600 INCH, SIDE BRAZED, CERAMIC, DIP-28 0.600 INCH, SIDE BRAZED, CERAMIC, DIP-28 0.600 INCH, SIDE BRAZED, CERAMIC, DIP-28 - 0.600 INCH, SIDE BRAZED, CERAMIC, DIP-28 0.600 INCH, SIDE BRAZED, CERAMIC, DIP-28 0.600 INCH, SIDE BRAZED, CERAMIC, DIP-28 0.600 INCH, SIDE BRAZED, CERAMIC, DIP-28
针数 28 - 28 28 28 - 28 28 28 28
其他特性 RETRANSMIT - RETRANSMIT RETRANSMIT RETRANSMIT - RETRANSMIT RETRANSMIT RETRANSMIT RETRANSMIT
周期时间 25 ns - 20 ns 20 ns 20 ns - 20 ns 25 ns 25 ns 25 ns
长度 35.687 mm - 35.687 mm 35.687 mm 35.687 mm - 35.687 mm 35.687 mm 35.687 mm 35.687 mm
功能数量 1 - 1 1 1 - 1 1 1 1
输出特性 3-STATE - 3-STATE 3-STATE 3-STATE - 3-STATE 3-STATE 3-STATE 3-STATE
可输出 NO - NO NO NO - NO NO NO NO
并行/串行 SERIAL - SERIAL SERIAL SERIAL - SERIAL SERIAL SERIAL SERIAL
座面最大高度 4.826 mm - 4.826 mm 4.826 mm 4.826 mm - 4.826 mm 4.826 mm 4.826 mm 4.826 mm
最大供电电压 (Vsup) 5.5 V - 5.5 V 5.5 V 5.5 V - 5.5 V 5.5 V 5.5 V 5.5 V
最小供电电压 (Vsup) 4.5 V - 4.5 V 4.5 V 4.5 V - 4.5 V 4.5 V 4.5 V 4.5 V
宽度 15.24 mm - 15.24 mm 15.24 mm 15.24 mm - 15.24 mm 15.24 mm 15.24 mm 15.24 mm
厂商名称 - IDT (Integrated Device Technology) IDT (Integrated Device Technology) IDT (Integrated Device Technology) - IDT (Integrated Device Technology) IDT (Integrated Device Technology) IDT (Integrated Device Technology) IDT (Integrated Device Technology) IDT (Integrated Device Technology)

 
EEWorld订阅号

 
EEWorld服务号

 
汽车开发圈

 
机器人开发圈

About Us 关于我们 客户服务 联系方式 器件索引 网站地图 最新更新 手机版

站点相关: 大学堂 TI培训 Datasheet 电子工程 索引文件: 2746  2636  2128  353  2566  2  19  50  1  20 

器件索引   0 1 2 3 4 5 6 7 8 9 A B C D E F G H I J K L M N O P Q R S T U V W X Y Z

北京市海淀区中关村大街18号B座15层1530室 电话:(010)82350740 邮编:100190

电子工程世界版权所有 京B2-20211791 京ICP备10001474号-1 电信业务审批[2006]字第258号函 京公网安备 11010802033920号 Copyright © 2005-2026 EEWORLD.com.cn, Inc. All rights reserved