High Performance Isolated
Collector Silicon Bipolar
Transistor
Technical Data
HBFP-0420
Features
• Ideal for High Gain, Low
Noise Applications
• Transition Frequency
f
T
= 25 GHz
• Typical Performance at
1.8 GHz
Associated Gain of 17 dB
and Noise Figure of 1.1 dB
at 2 V and 5 mA
P
1dB
of 12 dBm at 2 V and
20 mA
• Can be Used Without
Impedance Matching
Surface Mount Plastic
Description
Package/ SOT-343 (SC-70)
Agilent’s HBFP-0420 is a high
Outline 4T
performance isolated collector
silicon bipolar junction transistor
housed in a 4-lead SC-70
(SOT-343) surface mount plastic
package.
HBFP-0420 provides an associated
gain of 17 dB, noise figure of
1.1 dB, and P
1dB
of 12 dBm at
1.8 GHz. Because of high gain and
low current characteristics,
HBFP-0420 is ideal for
cellular/
PCS handsets
as well as for
C-Band and Ku-Band
applications.
This product is based on a 25 GHz
transition frequency fabrication
process, which enables the
products to be used for high
performance, low noise applica-
tions at 900 MHz, 1.9 GHz,
2.4 GHz, and beyond.
Pin Configuration
Base
Applications
• LNA, Oscillator, Driver
Amplifier, Buffer Amplifier,
and Down Converter for
Cellular and PCS Handsets
and Cordless Telephones
• Oscillator for
TV Delivery
and TVRO Systems up to
10 GHz
Emitter
03x
Emitter
Collector
Note:
Package marking provides orientation
and identification.
03 = Device code
x = Date code character. A new
character is assigned for each
month, year
2
HBFP-0420 Absolute Maximum Ratings
Symbol
V
EBO
V
CBO
V
CEO
I
C
P
T
T
j
T
STG
Parameter
Emitter-Base Voltage
Collector-Base Voltage
Collector-Emitter Voltage
Collector Current
Power Dissipation
[2]
Junction Temperature
Storage Temperature
Units
V
V
V
mA
mW
°C
°C
Absolute
Maximum
[1]
1.5
15.0
4.5
36
162
150
-65 to 150
Thermal Resistance:
θ
jc
= 300°C/W
Notes:
1. Permanent damage may occur if
any of these limits are exceeded.
2. P
T
limited by maximum ratings.
Electrical Specifications, T
C
= 25°C
Symbol
Parameters and Test Conditions
I
C
= 1 mA, open base
V
CB
= 5 V, I
E
= 0
V
EB
= 1.5 V, I
C
= 0
V
CE
= 2 V, I
C
= 5 mA
I
C
= 5 mA, V
CE
= 2 V, f = 1.8 GHz
I
C
= 5 mA, V
CE
= 2 V, f = 1.8 GHz
I
C
= 20 mA, V
CE
= 2 V, f = 1.8 GHz
Units
V
nA
µA
—
dB
dB
dB
15.5
50
80
1.1
17
17
12
Min.
4.5
200
35
150
1.4
Typ.
Max.
DC Characteristics
BV
CEO
Collector-Emitter Breakdown Voltage
I
CBO
I
EBO
h
FE
Collector-Cutoff Current
Emitter-Base Cutoff Current
DC Current Gain
RF Characteristics
F
MIN
Minimum Noise Figure
G
a
|S
21
|
2
P
-1 dB
Associated Gain
Insertion Power Gain
Power Output @ 1 dB
Compression Point
I
C
= 20 mA, V
CE
= 2 V, f = 1.8 GHz dBm
3
HBFP-0420 Typical Scattering Parameters,
V
CE
= 2 V, I
C
= 5 mA, T
C
= 25°C
Freq.
GHz
S
11
Mag
Ang
dB
S
21
Mag
Ang
dB
S
12
Mag
Ang
Mag
S
22
Ang
0.1
0.5
0.9
1.0
1.5
1.8
2.0
2.5
3.0
3.5
4.0
4.5
5.0
5.5
6.0
6.5
7.0
7.5
8.0
8.5
9.0
9.5
10.0
0.746
0.682
0.607
0.585
0.532
0.512
0.502
0.490
0.483
0.480
0.479
0.482
0.487
0.497
0.513
0.532
0.553
0.575
0.592
0.609
0.623
0.635
0.648
-11.9
-55.6
-90.1
-97.5
-128.3
-143.1
-151.6
-169.8
-174.6
161.4
149.2
137.6
126.5
115.4
105.0
94.6
84.0
74.5
66.0
58.2
50.7
43.0
34.5
23.4
21.9
19.9
19.3
16.8
15.5
14.7
12.9
11.6
10.3
9.3
8.4
7.6
6.9
6.2
5.6
5.0
4.4
3.9
3.3
2.9
2.4
1.9
14.853
12.473
9.909
9.181
6.918
5.952
5.453
4.422
3.786
3.286
2.908
2.629
2.389
2.205
2.040
1.902
1.778
1.662
1.559
1.469
1.393
1.312
1.248
171.0
139.8
116.8
112.2
93.1
83.4
78.4
65.8
55.2
45.2
35.7
26.5
17.4
8.3
-0.8
-9.8
-18.7
-27.5
-36.1
-44.4
-52.6
-60.8
-69.1
-41.4
-28.5
-25.0
-24.5
-22.9
-22.3
-21.9
-21.2
-20.5
-19.8
-19.2
-18.5
-17.9
-17.3
-16.8
-16.3
-15.8
-15.3
-14.9
-14.6
-14.2
-13.9
-13.6
0.009
0.038
0.056
0.059
0.072
0.077
0.080
0.088
0.095
0.102
0.110
0.118
0.127
0.136
0.145
0.153
0.162
0.171
0.179
0.186
0.195
0.202
0.209
84.8
63.6
49.3
46.9
37.2
33.2
31.2
26.9
23.4
19.8
16.3
12.5
8.1
3.5
-1.5
-7.1
-12.6
-18.2
-24.0
-29.8
-35.4
-41.6
-48.0
0.985
0.861
0.696
0.661
0.516
0.450
0.419
0.359
0.314
0.286
0.266
0.248
0.233
0.209
0.189
0.161
0.134
0.115
0.110
0.113
0.120
0.127
0.130
-6.6
-29.4
-46.6
-49.3
-62.2
-67.7
-71.6
-78.4
-86.3
-92.5
-98.1
-104.1
-110.5
-117.9
-126.4
-137.1
-152.0
-171.2
167.1
147.2
130.6
118.0
103.9
HBFP-0420
Noise Parameters:
V
CE
= 2 V, I
C
= 5 mA
Freq.
GHz
0.9
1.0
1.5
1.8
2.0
2.5
3.0
3.5
4.0
4.5
5.0
5.5
6.0
6.5
7.0
7.5
8.0
8.5
9.0
9.5
10.0
F
min
dB
1.00
1.02
1.10
1.14
1.18
1.25
1.32
1.39
1.49
1.58
1.63
1.75
1.88
1.94
2.05
2.15
2.23
2.47
2.59
2.63
2.74
Mag
0.281
0.266
0.187
0.175
0.154
0.184
0.226
0.254
0.292
0.312
0.355
0.375
0.416
0.453
0.486
0.506
0.532
0.556
0.589
0.610
0.624
Γ
opt
Ang
28.8
36.6
68.3
94.1
118.4
146.5
165.9
-176.8
-162.3
-147.3
-135.5
-121.0
-108.5
-98.1
-84.4
-74.8
-65.0
-56.8
-48.4
-40.4
-31.0
R
N
G
a
dB
22.19
21.39
18.30
16.92
16.21
14.34
13.00
11.79
10.79
9.95
9.22
8.55
7.99
7.47
6.99
6.49
6.04
5.65
5.32
4.91
4.56
Ω
9.6
9.2
7.6
6.8
6.1
5.4
5.0
4.9
5.0
6.0
6.8
9.3
12.3
15.8
21.4
26.8
33.6
41.7
50.4
58.2
68.3
S and noise parameters are measured
on a microstrip line made on
0.025 inch thick alumina carrier. The
input reference plane is at the end of
the base lead, the output reference
plane is at the end of the collector
lead. S and noise parameters include
the effect of four plated through via
holes connecting emitter landing pads
on the top of test carrier to the
microstrip ground plane on the
bottom side of the carrier. Two
0.020 inch diameter via holes are
placed within 0.010 inch from each
emitter lead contact point, one via on
each side of that point.
4
HBFP-0420 Typical Scattering Parameters,
V
CE
= 2 V, I
C
= 15 mA, T
C
= 25°C
Freq.
GHz
S
11
Mag
Ang
dB
S
21
Mag
Ang
dB
S
12
Mag
Ang
Mag
S
22
Ang
0.1
0.5
0.9
1.0
1.5
1.8
2.0
2.5
3.0
3.5
4.0
4.5
5.0
5.5
6.0
6.5
7.0
7.5
8.0
8.5
9.0
9.5
10.0
0.481
0.437
0.416
0.414
0.415
0.418
0.421
0.428
0.435
0.439
0.442
0.447
0.455
0.467
0.484
0.504
0.527
0.552
0.572
0.590
0.604
0.616
0.630
-22.1
-91.4
-131.0
-138.0
-163.4
-174.6
178.9
165.4
153.6
143.2
133.3
123.7
114.1
104.6
95.5
86.0
76.7
68.0
60.4
53.3
46.4
39.2
31.4
29.1
26.0
22.6
21.9
18.7
17.2
16.3
14.4
12.9
11.6
10.5
9.6
8.8
8.0
7.3
6.7
6.1
5.5
4.9
4.4
3.9
3.4
3.0
28.438
19.969
13.526
12.378
8.619
7.254
6.549
5.262
4.418
3.811
3.362
3.024
2.749
2.522
2.327
2.163
2.014
1.880
1.765
1.658
1.565
1.484
1.406
166.1
124.7
101.9
97.8
81.9
74.2
69.7
59.3
49.9
41.0
32.4
23.9
15.4
6.8
-1.8
-10.4
-18.9
-27.4
-35.5
-43.6
-51.6
-59.6
-67.7
-43.0
-31.2
-28.2
-27.7
-25.5
-24.4
-23.7
-22.3
-21.0
-19.9
-18.9
-18.1
-17.3
-16.6
-16.0
-15.4
-14.9
-14.5
-14.1
-13.8
-13.4
-13.1
-12.9
0.007
0.027
0.039
0.041
0.053
0.060
0.065
0.077
0.089
0.101
0.113
0.125
0.137
0.148
0.159
0.169
0.179
0.188
0.197
0.205
0.213
0.221
0.228
82.3
60.7
53.4
52.9
49.6
47.9
46.6
42.9
38.8
34.1
29.0
23.7
17.9
11.8
5.4
-1.0
-7.6
-14.3
-20.6
-27.1
-33.6
-40.3
-47.2
0.959
0.702
0.500
0.465
0.341
0.292
0.269
0.226
0.196
0.177
0.163
0.152
0.138
0.120
0.100
0.077
0.059
0.060
0.077
0.096
0.112
0.123
0.134
-10.5
-41.4
-57.2
-59.6
-69.8
-74.4
-77.6
-84.1
-91.1
-96.8
-102.1
-107.2
-113.4
-121.1
-131.4
-148.2
-178.2
144.1
116.6
100.7
89.0
77.9
66.5
HBFP-0420
Noise Parameters:
V
CE
= 2 V, I
C
= 15 mA
Freq.
GHz
0.9
1.0
1.5
1.8
2.0
2.5
3.0
3.5
4.0
4.5
5.0
5.5
6.0
6.5
7.0
7.5
8.0
8.5
9.0
9.5
10.0
F
min
dB
1.57
1.58
1.63
1.67
1.74
1.72
1.76
1.84
1.89
1.97
2.03
2.15
2.28
2.36
2.42
2.54
2.65
2.83
2.96
3.10
3.14
Mag
0.033
0.054
0.169
0.252
0.234
0.306
0.343
0.365
0.383
0.407
0.431
0.463
0.483
0.513
0.538
0.560
0.581
0.602
0.621
0.640
0.653
Γ
opt
Ang
-135.5
-151.8
-155.2
-148.1
-158.3
-149.2
-142.2
-133.5
-124.4
-115.6
-106.3
-96.8
-87.3
-77.3
-67.8
-59.2
-51.4
-44.6
-37.2
-29.9
-21.8
R
N
G
a
dB
23.88
23.04
19.79
18.34
17.52
15.71
14.24
12.97
11.89
11.01
10.22
9.53
8.89
8.32
7.79
7.30
6.85
6.42
5.99
5.61
5.23
Ω
8.0
7.8
6.7
6.3
6.4
6.1
6.5
7.7
9.4
11.5
14.1
17.8
22.9
28.7
35.5
43.0
51.7
61.3
71.0
81.1
90.5
S and noise parameters are measured
on a microstrip line made on
0.025 inch thick alumina carrier. The
input reference plane is at the end of
the base lead, the output reference
plane is at the end of the collector
lead. S and noise parameters include
the effect of four plated through via
holes connecting emitter landing pads
on the top of test carrier to the
microstrip ground plane on the
bottom side of the carrier. Two
0.020 inch diameter via holes are
placed within 0.010 inch from each
emitter lead contact point, one via on
each side of that point.
5
HBFP-0420 Typical Performance
25
2 mA
5 mA
10 mA
15 mA
4
30
25
20
15
10
5
0
ASSOCIATED GAIN (dB)
20
ASSOCIATED GAIN (dB)
15
NOISE FIGURE (dB)
3
2
10
1
5
0
0
2
4
6
8
10
FREQUENCY (GHz)
0
0
2
4
6
FREQUENCY (GHz)
2 mA
5 mA
10 mA
15 mA
8
10
0.9 GHz
1.8 GHz
2.5 GHz
3 GHz
4 GHz
5 GHz
6 GHz
0
5
10
15
20
25
COLLECTOR CURRENT (mA)
Figure 1. Associated Gain vs.
Frequency and Collector Current
at 2 V.
3.00
2.50
NOISE FIGURE (dB)
Figure 2. Noise Figure vs.
Frequency and Collector Current at
2 V.
25
0.9 GHz
2.5 GHz
15
3 GHz
4 GHz
10
5 GHz
6 GHz
5
0
25
0
1
2
3
4
5
6
VOLTAGE (V)
NOISE FIGURE (dB)
Figure 3. Associated Gain vs.
Collector Current and Frequency
at 2 V.
2.5
ASSOCIATED GAIN (dB)
20
1.8 GHz
2.0
2.00
1.50
1.00
0.50
0
0
5
10
15
0.9 GHz
1.8 GHz
2.5 GHz
3 GHz
4 GHz
5 GHz
6 GHz
20
COLLECTOR CURRENT (mA)
1.5
1.0
0.5
0
0
1
2
3
4
5
VOLTAGE (V)
0.9 GHz
1.8 GHz
2.5 GHz
3 GHz
4 GHz
5 GHz
6 GHz
6
Figure 4. Noise Figure vs. Collector
Current and Frequency at 2 V.
Figure 5. Associated Gain vs. Voltage
(V
CE
) at 5 mA.
Figure 6. Noise Figure vs. Voltage
(V
CE
) at 5 mA.
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