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SFAS802GC0

产品描述Rectifier Diode, 1 Phase, 1 Element, 8A, 100V V(RRM), Silicon, TO-263AB, D2PAK-3/2
产品类别分立半导体    二极管   
文件大小363KB,共4页
制造商Taiwan Semiconductor
官网地址http://www.taiwansemi.com/
标准
下载文档 详细参数 全文预览

SFAS802GC0概述

Rectifier Diode, 1 Phase, 1 Element, 8A, 100V V(RRM), Silicon, TO-263AB, D2PAK-3/2

SFAS802GC0规格参数

参数名称属性值
是否Rohs认证符合
包装说明R-PSSO-G2
Reach Compliance Codecompliant
ECCN代码EAR99
Is SamacsysN
其他特性LOW POWER LOSS
应用EFFICIENCY
外壳连接CATHODE
配置SINGLE
二极管元件材料SILICON
二极管类型RECTIFIER DIODE
最大正向电压 (VF)0.95 V
JEDEC-95代码TO-263AB
JESD-30 代码R-PSSO-G2
最大非重复峰值正向电流125 A
元件数量1
相数1
端子数量2
最高工作温度150 °C
最低工作温度-55 °C
最大输出电流8 A
封装主体材料PLASTIC/EPOXY
封装形状RECTANGULAR
封装形式SMALL OUTLINE
最大重复峰值反向电压100 V
最大反向电流10 µA
最大反向恢复时间0.035 µs
表面贴装YES
端子形式GULL WING
端子位置SINGLE
Base Number Matches1

文档预览

下载PDF文档
SFAS801G - SFAS808G
Taiwan Semiconductor
CREAT BY ART
FEATURES
- Glass passivated junction chip
- Ideal for automated placement
- High efficiency, low VF
- High surge current capability
- Low power loss
- Moisture sensitivity level: level 1, per J-STD-020
- Compliant to RoHS Directive 2011/65/EU and
in accordance to WEEE 2002/96/EC
- Halogen-free according to IEC 61249-2-21 definition
Surface Mount Super Fast Rectifiers
MECHANICAL DATA
Case:
TO-263AB (D
2
PAK)
Molding compound, UL flammability classification rating 94V-0
Base P/N with suffix "G" on packing code - halogen-free
Base P/N with prefix "H" on packing code - AEC-Q101 qualified
Terminal:
Matte tin plated leads, solderable per JESD22-B102
Meet JESD 201 class 1A whisker test
with prefix "H" on packing code meet JESD 201 class 2 whisker test
Polarity:
As marked
Weight:
1.33 g (approximately)
2
TO-263AB (D PAK)
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
(T
A
=25°C unless otherwise noted)
PARAMETER
Maximum repetitive peak reverse voltage
Maximum RMS voltage
Maximum DC blocking voltage
Maximum average forward rectified current
Peak forward surge current, 8.3 ms single half sine-wave
superimposed on rated load
Maximum instantaneous forward voltage
I
F
= 8 A
Maximum reverse current @ rated V
R
Maximum reverse recovery time (Note 1)
Typical junction capacitance (Note 2)
Typical thermal resistance
Operating junction temperature range
Storage temperature range
T
J
=25°C
T
J
=100°C
SYMBOL
V
RRM
V
RMS
V
DC
I
F(AV)
I
FSM
V
F
I
R
t
rr
C
J
R
θJC
T
J
T
STG
80
2.2
- 55 to +150
- 55 to +150
0.95
10
400
35
60
SFAS SFAS SFAS SFAS SFAS SFAS SFAS SFAS
801G 802G 803G 804G 805G 806G 807G 808G
50
35
50
100
70
100
150
105
150
200
140
200
8
125
1.3
1.7
300
210
300
400
280
400
500
350
500
600
420
600
Unit
V
V
V
A
A
V
μA
ns
pF
°C/W
°C
°C
Note 1: Reverse Recovery Test Conditions: I
F
=0.5A, I
R
=1.0A, I
RR
=0.25A
Note 2: Measured at 1 MHz and Applied Reverse Voltage of 4.0V D.C.
Document Number: DS_D1405074
Version: L14

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