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Datasheet> 器件分类 > 分立半导体> 晶体管> RN1707JE(TE85L,F)

RN1707JE(TE85L,F): 产品描述PRE-BIASED "DIGITAL" TRANSISTOR,50V V(BR)CEO,100MA I(C),SOT-353VAR; 产品类别分立半导体晶体管; 文件大小329KB，共6页; 制造商Toshiba(东芝); 官网地址http://toshiba-semicon-storage.com/; 标准

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RN1707JE(TE85L,F)概述

PRE-BIASED "DIGITAL" TRANSISTOR,50V V(BR)CEO,100MA I(C),SOT-353VAR

RN1707JE(TE85L,F)规格参数

参数名称	属性值
是否Rohs认证	符合
包装说明	,
Reach Compliance Code	unknown
Is Samacsys	N
最大集电极电流 (IC)	0.1 A
最小直流电流增益 (hFE)	80
元件数量	2
极性/信道类型	NPN
最大功率耗散 (Abs)	0.1 W
表面贴装	YES
晶体管元件材料	SILICON
Base Number Matches	1

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RN1707JE~RN1709JE

TOSHIBA Transistor

Silicon NPN Epitaxial Type (PCT Process) (Bias Resistor Built-in Transistor)

RN1707JE,RN1708JE,RN1709JE

Switching, Inverter Circuit, Interface Circuit and

Driver Circuit Applications

•

Two devices are incorporated into an Extreme-Super-Mini (5-pin)

package.

Incorporating a bias resistor into a transistor reduces parts count.

Reducing the parts count enables the manufacture of ever more

compact equipment and lowers assembly cost.

•

A wide range of resistor values is available to use in various circuit

designs.

Complementary to RN2707JE to RN2709JE

1.BASE1

(B1)

2.EMITTER

(E)

3.BASE2

(B2)

4.COLLECTOR2 (C2)

5.COLLECTOR1 (C1)

R2 (kΩ)

Unit: mm

Equivalent Circuit and Bias Resistor Values

Type No.

RN1707JE

RN1708JE

R1 (kΩ)

JEDEC

JEITA

TOSHIBA

Weight:3mg (typ.)

―

2-2P1D

RN1709JE

Equivalent Circuit

Absolute Maximum Ratings

(Ta = 25°C)

(Q1, Q2 common)

Characteristics

Collector-base voltage

Collector-emitter voltage

RN1707JE to 1709JE

RN1707JE

Emitter-base voltage

RN1708JE

RN1709JE

Collector current

Collector power dissipation

Junction temperature

Storage temperature range

RN1707JE to 1709JE

(Note 1)

stg

EBO

Symbol

CBO

CEO

Rating

100

150

−55

to150

°C

Unit

(top view)

Note:

Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the

significant change in temperature, etc.) may cause this product to decrease in the reliability significantly

even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute

maximum ratings.

Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook

(“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test

report and estimated failure rate, etc).

Note 1: Total rating

2010-05-19

RN1707JE(TE85L,F)相似产品对比

	RN1707JE(TE85L,F)	RN1707JE(TE85L)	RN1707JE(TPL3,F)	RN1708JE(TE85L)	RN1708JE(TE85L,F)	RN1708JE(TPL3)	RN1709JE(TE85L)	RN1709JE(TPL3,F)	RN1709JE(TE85L,F)
描述	PRE-BIASED "DIGITAL" TRANSISTOR,50V V(BR)CEO,100MA I(C),SOT-353VAR	RN1707JE(TE85L)	PRE-BIASED "DIGITAL" TRANSISTOR,50V V(BR)CEO,100MA I(C),SOT-353VAR	RN1708JE(TE85L)	PRE-BIASED "DIGITAL" TRANSISTOR,50V V(BR)CEO,100MA I(C),SOT-353VAR	PRE-BIASED "DIGITAL" TRANSISTOR,50V V(BR)CEO,100MA I(C),SOT-353VAR	RN1709JE(TE85L)	PRE-BIASED \"DIGITAL\" TRANSISTOR,50V V(BR)CEO,100MA I(C),SOT-353VAR	PRE-BIASED \"DIGITAL\" TRANSISTOR,50V V(BR)CEO,100MA I(C),SOT-353VAR
Reach Compliance Code	unknown	unknown	unknown	unknown	unknown	unknown	unknown	unknown	unknown
是否Rohs认证	符合	-	符合	-	符合	不符合	-	符合	符合
最大集电极电流 (IC)	0.1 A	-	0.1 A	-	0.1 A	0.1 A	-	0.1 A	0.1 A
最小直流电流增益 (hFE)	80	-	80	-	80	80	-	70	70
元件数量	2	-	2	-	2	2	-	2	2
极性/信道类型	NPN	-	NPN	-	NPN	NPN	-	NPN	NPN
最大功率耗散 (Abs)	0.1 W	-	0.1 W	-	0.1 W	0.1 W	-	0.1 W	0.1 W
表面贴装	YES	-	YES	-	YES	YES	-	YES	YES
晶体管元件材料	SILICON	-	SILICON	-	SILICON	SILICON	-	SILICON	SILICON
Base Number Matches	1	1	1	1	1	1	-	-	-

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