NTE482概述

RF Power Bipolar Transistor, 1-Element, Ultra High Frequency Band, Silicon, NPN

NTE482规格参数

参数名称	属性值
包装说明	FLANGE MOUNT, R-CDFM-F6
Reach Compliance Code	unknown
ECCN代码	EAR99
Is Samacsys	N
最大集电极电流 (IC)	7 A
集电极-发射极最大电压	16 V
配置	SINGLE
最小直流电流增益 (hFE)	20
最高频带	ULTRA HIGH FREQUENCY BAND
JESD-30 代码	R-CDFM-F6
元件数量	1
端子数量	6
封装主体材料	CERAMIC, METAL-SEALED COFIRED
封装形状	RECTANGULAR
封装形式	FLANGE MOUNT
极性/信道类型	NPN
功耗环境最大值	46 W
最大功率耗散 (Abs)	46 W
认证状态	Not Qualified
表面贴装	YES
端子形式	FLAT
端子位置	DUAL
晶体管应用	AMPLIFIER
晶体管元件材料	SILICON
Base Number Matches	1

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NTE482相似产品对比

	NTE482	NTE485	NTE481	NTE474
描述	RF Power Bipolar Transistor, 1-Element, Ultra High Frequency Band, Silicon, NPN	RF Power Bipolar Transistor, 1-Element, Ultra High Frequency Band, Silicon, NPN	RF Power Bipolar Transistor, 1-Element, Ultra High Frequency Band, Silicon, NPN	RF Power Bipolar Transistor, 1-Element, Very High Frequency Band, Silicon, NPN, TO-202, TO-202, 3 PIN
包装说明	FLANGE MOUNT, R-CDFM-F6	FLANGE MOUNT, R-CDFM-F6	FLANGE MOUNT, O-CRFM-F4	FLANGE MOUNT, R-PSFM-T3
Reach Compliance Code	unknown	unknown	unknown	unknown
ECCN代码	EAR99	EAR99	EAR99	EAR99
最大集电极电流 (IC)	7 A	7.5 A	5 A	0.6 A
集电极-发射极最大电压	16 V	18 V	16 V	18 V
配置	SINGLE	SINGLE	SINGLE	SINGLE
最小直流电流增益 (hFE)	20	15	20	5
最高频带	ULTRA HIGH FREQUENCY BAND	ULTRA HIGH FREQUENCY BAND	ULTRA HIGH FREQUENCY BAND	VERY HIGH FREQUENCY BAND
JESD-30 代码	R-CDFM-F6	R-CDFM-F6	O-CRFM-F4	R-PSFM-T3
元件数量	1	1	1	1
端子数量	6	6	4	3
封装主体材料	CERAMIC, METAL-SEALED COFIRED	CERAMIC, METAL-SEALED COFIRED	CERAMIC, METAL-SEALED COFIRED	PLASTIC/EPOXY
封装形状	RECTANGULAR	RECTANGULAR	ROUND	RECTANGULAR
封装形式	FLANGE MOUNT	FLANGE MOUNT	FLANGE MOUNT	FLANGE MOUNT
极性/信道类型	NPN	NPN	NPN	NPN
功耗环境最大值	46 W	70 W	28 W	9.5 W
最大功率耗散 (Abs)	46 W	70 W	28 W	9.5 W
认证状态	Not Qualified	Not Qualified	Not Qualified	Not Qualified
表面贴装	YES	YES	NO	NO
端子形式	FLAT	FLAT	FLAT	THROUGH-HOLE
端子位置	DUAL	DUAL	RADIAL	SINGLE
晶体管应用	AMPLIFIER	AMPLIFIER	AMPLIFIER	AMPLIFIER
晶体管元件材料	SILICON	SILICON	SILICON	SILICON
Base Number Matches	1	1	1	1
Is Samacsys	N	N	N	-

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