SV15..F
SV15..F
Fast Recovery Diode
Replaces March 1998 version, DS4209-2.2
DS4209-3.0 January 2000
APPLICATIONS
s
Induction Heating
s
A.C. Motor Drives
s
Snubber Diode
s
Welding
s
High Frequency Rectification
s
UPS
KEY PARAMETERS
V
RRM
1600V
I
F(AV)
205A
I
FSM
3000A
Q
r
35
µ
C
t
rr
3.2
µ
s
FEATURES
s
Thermal Fatigue Free Pressure Contact
s
High Surge Capability
s
Low Recovery Charge
VOLTAGE RATINGS
Type Number
Repetitive Peak
Reverse Voltage
V
RRM
V
Conditions
SV15 16F M or K
V
RSM
= V
RRM
+ 100V
1600
SV15 14F M or K
1400
SV15 12F M or K
1200
SV15 10F M or K
1000
SV15 08F M or K
800
SV15 06F M or K
600
For 1/2" 20 UNF thread, add suffix K, e.g. SV15 16FK.
For M12 thread, add suffix M, e.g. SV15 16FM.
For stud anode add 'R' to type number, e.g. SV15 16FMR.
For outline DO8C add suffix 'C' to typ number,
e.g. SV15 16FKC.
Outline type codes: DO8 and DO8C.
See Package Details for further information.
CURRENT RATINGS
Symbol
I
F(AV)
I
F(RMS)
Parameter
Mean forward current
RMS value
Conditions
Half wave resistive load, T
case
= 65
o
C
T
case
= 65
o
C
Max.
205
236
Units
A
A
1/7
SV15..F
SURGE RATINGS
Symbol
I
FSM
I
2
t
I
FSM
It
2
Parameter
Surge (non-repetitive) forward current
Conditions
Max.
3.0
Units
kA
A
2
s
kA
A
2
s
10ms half sine; with 0% V
RRM,
T
j
= 150
o
C
I
2
t for fusing
Surge (non-repetitive) forward current
10ms half sine; with 50% V
RRM,
T
j
= 150 C
I t for fusing
2
o
45 x 10
3
-
-
THERMAL AND MECHANICAL DATA
Symbol
R
th(j-c)
R
th(c-h)
T
vj
T
stg
-
Parameter
Thermal resistance - junction to case
Thermal resistance - case to heatsink
Virtual junction temperature
Storage temperature range
Mounting torque
Mounting torque 15Nm
with mounting compound
On-state (conducting)
Conditions
dc
Min.
-
-
-
-55
12.0
Max.
0.23
0.02
150
200
15.0
Units
o
C/W
o
C/W
o
C
C
o
Nm
CHARACTERISTICS
Symbol
V
FM
I
RRM
t
rr
Q
RA1
I
RM
K
V
TO
r
T
V
FRM
Forward voltage
Peak reverse current
Reverse recovery time
Recovered charge (50% chord)
Reverse recovery current
Soft factor
Threshold voltage
Slope resistance
Forward recovery voltage
At T
vj
= 150
o
C
At T
vj
= 150
o
C
di/dt = 1000A/µs, T
j
= 125
o
C
I
F
= 450A, di
RR
/dt = 10A/µs
T
case
= 125
o
C, V
R
= 100V
Parameter
Conditions
At 450A peak, T
case
= 25
o
C
At V
RRM
, T
case
= 150
o
C
Typ.
-
-
-
-
-
-
-
-
-
Max.
1.6
20
3.2
35
21
-
1.0
1.33
-
Units
V
mA
µs
µC
A
-
V
mΩ
V
2/7
SV15..F
DEFINITION OF K FACTOR AND Q
RA1
Q
RA1
= 0.5x I
RR
(t
1
+ t
2
)
dI
R
/dt
0.5x I
RR
I
RR
t
1
t
2
k = t
1
/t
2
τ
CURVES
3000
Measured under pulse conditions
2500
Instantaneous forward current I
F
- (A)
2000
T
j
= 25˚C
1500
T
j
= 150˚C
1000
500
1.0
2.0
3.0
4.0
5.0
Instantaneous forward voltage V
F
- (V)
Fig.1 Maximum (limit) forward characteristics
3/7
SV15..F
500
Measured under pulse conditions
400
Instantaneous forward current I
F
- (A)
300
200
T
j
= 150˚C
T
j
= 25˚C
100
0
1.0
1.2
1.4
1.6
1.8
Instantaneous forward voltage V
F
- (V)
Fig.2 Maximum (limit) forward characteristics
10000
I
F
Q
S
=
∫
50µs
0
Conditions:
T
j
= 150˚C,
QS
V
R
= 100V
Reverse recovered charge Q
S
- (µC)
1000
t
p
= 1ms
dI
R
/dt
I
RR
I
F
= 2000
I
F
= 1000
I
F
= 200
I
F
= 500
100
I
F
= 100
10
1
10
100
Rate of rise of reverse current dI
R
/dt - (A/µs)
Fig.3 Recovered charge
1000
4/7
SV15..F
1000
Conditions:
T
j
= 150˚C,
V
R
= 100V
I
F
= 2000A
Reverse recovery current I
RR
- (A)
I
F
= 1000A
I
F
= 500A
I
F
= 200A
100
I
F
= 100A
10
1
10
100
Rate of rise of reverse current dI
R
/dt - (A/µs)
1000
Fig.4 Typical reverse recovery current vs rate of rise of reverse current
0.1
Thermal impedance - (˚C/W)
d.c.
0.01
0.001
0.01
0.1
1
Time - (s)
10
100
Fig.5 Maximum (limit) transient thermal impedance - junction to case - (˚C/W)
5/7
京公网安备 11010802033920号
Copyright © 2005-2026 EEWORLD.com.cn, Inc. All rights reserved
电子工程世界
