CD4073BMS, CD4081BMS
CD4082BMS
January 1993
CMOS AND Gate
Pinout
CD4073BMS
TOP VIEW
Features
• High-Voltage Types (20V Rating)
• CD4073BMS Triple 3-Input AND Gate
• CD4081BMS Quad 2-Input AND Gate
• CD4082BMS Dual 4-Input AND Gate
• Medium Speed Operation:
- tPLH, tPHL = 60ns (typ) at VDD = 10V
• 100% Tested for Quiescent Current at 20V
• Maximum Input Current of 1µA at 18V Over Full Pack-
age Temperature Range; 100nA at 18V and +25
o
C
• Noise Margin (Over Full Package Temperature Range):
- 1V at VDD = 5V
- 2V at VDD = 10V
- 2.5V at VDD = 15V
• Standardized Symmetrical Output Characteristics
• 5V, 10V and 15V Parametric Ratings
A 1
B 2
D 3
E 4
F 5
K=D
•
E
•
F 6
VSS 7
14 VDD
13 G
12 H
11 I
10 L = G
•
H
•
I
9 J=A
•
B
•
C
8 C
CD4081BMS
TOP VIEW
A 1
14 VDD
13 H
12 G
11 M = G
•
H
10 L = E
•
F
9 F
8 E
• Meets All Requirements of JEDEC Tentative Standard
No. 13B, “Standard Specifications for Description of
‘B’ Series CMOS Devices”
B 2
J=A
•
B 3
K=C
•
D 4
Description
CD4073BMS, CD4081BMS and CD4082BMS AND gates
provide the system designer with direct implementation of
the AND function and supplement the existing family of
CMOS gates.
The CD4073BMS, CD4081BMS and CD4082BMS are supplied
in these 14 lead outline packages:
Braze Seal DIP
Frit Seal DIP
Ceramic Flatpack
*CD4073B, CD4081B
*H4Q
*H1B
*H3W
†CD4082B
†H4H
C 5
D 6
VSS 7
CD4082BMS
TOP VIEW
J=A
•
B
•
C
•
D 1
D 2
C 3
B 4
A 5
NC 6
VSS 7
14 VDD
13 K = E
•
F
•
G
•
H
12 H
11 G
10 F
9 E
8 NC
NC = NO CONNECTION
CAUTION: These devices are sensitive to electrostatic discharge; follow proper IC Handling Procedures.
1-888-INTERSIL or 321-724-7143 | Copyright © Intersil Corporation 1999
File Number
3324
7-433
CD4073BMS, CD4081BMS, CD4082BMS
Functional Diagram
VDD
14
A
B
C
D
E
8
3
4
6
K
1
2
9
J
5
F
11
I
12
H
13
G
7
VSS
10
L
CD4073BMS
VDD
14
A
B
C
D
E
F
G
H
1
2
5
6
8
9
12
13
3
4
J
K
L
M
10
11
7
VSS
CD4081BMS
VDD
14
D
C
B
A
2
3
4
5
1
J
9
E
10
F
11
G
12
H
7
VSS
13
K
CD4082BMS
7-434
Specifications CD4073BMS, CD4081BMS, CD4082BMS
Absolute Maximum Ratings
DC Supply Voltage Range, (VDD) . . . . . . . . . . . . . . . -0.5V to +20V
(Voltage Referenced to VSS Terminals)
Input Voltage Range, All Inputs . . . . . . . . . . . . .-0.5V to VDD +0.5V
DC Input Current, Any One Input
. . . . . . . . . . . . . . . . . . . . . . . .±10mA
Operating Temperature Range . . . . . . . . . . . . . . . . -55
o
C to +125
o
C
Package Types D, F, K, H
Storage Temperature Range (TSTG) . . . . . . . . . . . -65
o
C to +150
o
C
Lead Temperature (During Soldering) . . . . . . . . . . . . . . . . . +265
o
C
At Distance 1/16
±
1/32 Inch (1.59mm
±
0.79mm) from case for
10s Maximum
Reliability Information
Thermal Resistance . . . . . . . . . . . . . . . .
θ
ja
θ
jc
Ceramic DIP and FRIT Package . . . . . 80
o
C/W
20
o
C/W
Flatpack Package . . . . . . . . . . . . . . . . 70
o
C/W
20
o
C/W
Maximum Package Power Dissipation (PD) at +125
o
C
For TA = -55
o
C to +100
o
C (Package Type D, F, K) . . . . . . 500mW
For TA = +100
o
C to +125
o
C (Package Type D, F, K) . . . . . Derate
Linearity at 12mW/
o
C to 200mW
Device Dissipation per Output Transistor . . . . . . . . . . . . . . . 100mW
For TA = Full Package Temperature Range (All Package Types)
Junction Temperature . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . +175
o
C
TABLE 1. DC ELECTRICAL PERFORMANCE CHARACTERISTICS
GROUP A
SUBGROUPS
1
2
VDD = 18V, VIN = VDD or GND
Input Leakage Current
IIL
VIN = VDD or GND
VDD = 20
VDD = 18V
Input Leakage Current
IIH
VIN = VDD or GND
VDD = 20
VDD = 18V
Output Voltage
Output Voltage
Output Current (Sink)
Output Current (Sink)
Output Current (Sink)
Output Current (Source)
Output Current (Source)
Output Current (Source)
Output Current (Source)
N Threshold Voltage
P Threshold Voltage
Functional
VOL15
VOH15
IOL5
IOL10
IOL15
IOH5A
IOH5B
IOH10
IOH15
VNTH
VPTH
F
VDD = 15V, No Load
VDD = 15V, No Load (Note 3)
VDD = 5V, VOUT = 0.4V
VDD = 10V, VOUT = 0.5V
VDD = 15V, VOUT = 1.5V
VDD = 5V, VOUT = 4.6V
VDD = 5V, VOUT = 2.5V
VDD = 10V, VOUT = 9.5V
VDD = 15V, VOUT = 13.5V
VDD = 10V, ISS = -10µA
VSS = 0V, IDD = 10µA
VDD = 2.8V, VIN = VDD or GND
VDD = 20V, VIN = VDD or GND
VDD = 18V, VIN = VDD or GND
VDD = 3V, VIN = VDD or GND
Input Voltage Low
(Note 2)
Input Voltage High
(Note 2)
Input Voltage Low
(Note 2)
Input Voltage High
(Note 2)
VIL
VIH
VIL
VIH
VDD = 5V, VOH > 4.5V, VOL < 0.5V
VDD = 5V, VOH > 4.5V, VOL < 0.5V
VDD = 15V, VOH > 13.5V,
VOL < 1.5V
VDD = 15V, VOH > 13.5V,
VOL < 1.5V
3
1
2
3
1
2
3
1, 2, 3
1, 2, 3
1
1
1
1
1
1
1
1
1
7
7
8A
8B
1, 2, 3
1, 2, 3
1, 2, 3
1, 2, 3
+25
o
C,
LIMITS
TEMPERATURE
+25
o
C
+125
o
C
-55
o
C
PARAMETER
Supply Current
SYMBOL
IDD
CONDITIONS
(NOTE 1)
VDD = 20V, VIN = VDD or GND
MIN
-
-
-
-100
-1000
-100
-
-
-
-
14.95
0.53
1.4
3.5
-
-
-
-
-2.8
0.7
MAX
.5
50
.5
-
-
-
100
1000
100
50
-
-
-
-
-0.53
-1.8
-1.4
-3.5
-0.7
2.8
UNITS
µA
µA
µA
nA
nA
nA
nA
nA
nA
mV
V
mA
mA
mA
mA
mA
mA
mA
V
V
V
+25
o
C
+125 C
-55
o
C
+25
o
C
+125
o
C
-55
o
C
+25
o
C, +125
o
C, -55
o
C
+125
o
C,
+25
o
C
+25
o
C
+25
o
C
+25
o
C
+25
o
C
+25
o
C
+25
o
C
+25
o
C
+25
o
C
+25
o
C
+25 C
+125
o
C
-55
o
C
+25
o
C, +125
o
C, -55
o
C
+25
o
C, +125
o
C, -55
o
C
+25
o
C, +125
o
C, -55
o
C
+25
o
C, +125
o
C, -55
o
C
o
o
-55
o
C
VOH > VOL <
VDD/2 VDD/2
-
3.5
-
11
1.5
-
4
-
V
V
V
V
NOTES: 1. All voltages referenced to device GND, 100% testing being
implemented.
2. Go/No Go test with limits applied to inputs.
3. For accuracy, voltage is measured differentially to VDD. Limit
is 0.050V max.
7-435
Specifications CD4073BMS, CD4081BMS, CD4082BMS
TABLE 2. AC ELECTRICAL PERFORMANCE CHARACTERISTICS
GROUP A
SUBGROUPS TEMPERATURE
9
10, 11
VDD = 5V, VIN = VDD or GND
9
10, 11
+25
o
C
+125
o
C, -55
o
C
+25
o
C
+125
o
C, -55
o
C
LIMITS
MIN
-
-
-
-
MAX
250
338
200
270
UNITS
ns
ns
ns
ns
PARAMETER
Propagation Delay
SYMBOL
TPHL
TPLH
TTHL
TTLH
CONDITIONS
(NOTES 1, 2)
VDD = 5V, VIN = VDD or GND
Transition Time
NOTES:
1. CL = 50pF, RL = 200K, Input TR, TF < 20ns.
2. -55
o
C and +125
o
C limits guaranteed, 100% testing being implemented.
TABLE 3. ELECTRICAL PERFORMANCE CHARACTERISTICS
LIMITS
PARAMETER
Supply Current
SYMBOL
IDD
CONDITIONS
VDD = 5V, VIN = VDD or GND
NOTES
1, 2
TEMPERATURE
-55
o
C, +25
o
C
+125
o
C
VDD = 10V, VIN = VDD or GND
1, 2
-55
o
C, +25
o
C
+125
o
C
VDD = 15V, VIN = VDD or GND
1, 2
-55
o
C, +25
o
C
+125
o
C
Output Voltage
Output Voltage
Output Voltage
Output Voltage
Output Current (Sink)
VOL
VOL
VOH
VOH
IOL5
VDD = 5V, No Load
VDD = 10V, No Load
VDD = 5V, No Load
VDD = 10V, No Load
VDD = 5V, VOUT = 0.4V
1, 2
1, 2
1, 2
1, 2
1, 2
+25
o
C, +125
o
C,
-55
o
C
+25
o
C, +125
o
C,
-55
o
C
+25
o
C, +125
o
C,
-55
o
C
+25
o
C, +125
o
C,
-55
o
C
+125
o
C
-55
o
C
Output Current (Sink)
IOL10
VDD = 10V, VOUT = 0.5V
1, 2
+125
o
C
-55
o
C
Output Current (Sink)
IOL15
VDD = 15V, VOUT = 1.5V
1, 2
+125
o
C
-55
o
C
Output Current (Source)
IOH5A
VDD = 5V, VOUT = 4.6V
1, 2
+125
o
C
-55
o
C
Output Current (Source)
IOH5B
VDD = 5V, VOUT = 2.5V
1, 2
+125
o
C
-55
o
C
Output Current (Source)
IOH10
VDD = 10V, VOUT = 9.5V
1, 2
+125
o
C
-55
o
C
Output Current (Source)
IOH15
VDD =15V, VOUT = 13.5V
1, 2
+125
o
C
-55
o
C
Input Voltage Low
Input Voltage High
Propagation Delay
VIL
VIH
TPHL
TPLH
VDD = 10V, VOH > 9V, VOL < 1V
VDD = 10V, VOH > 9V, VOL < 1V
VDD = 10V
VDD = 15V
1, 2
1, 2
1, 2, 3
1, 2, 3
+25
o
C, +125
o
C,
-55
o
C
+25
o
C, +125
o
C,
-55
o
C
+25
o
C
+25
o
C
MIN
-
-
-
-
-
-
-
-
4.95
9.95
0.36
0.64
0.9
1.6
2.4
4.2
-
-
-
-
-
-
-
-
-
7
-
-
MAX
.25
7.5
.5
15
.5
30
50
50
-
-
-
-
-
-
-
-
-0.36
-0.64
-1.15
-2.0
-0.9
-2.6
-2.4
-4.2
3
-
120
90
UNITS
µA
µA
µA
µA
µA
µA
mV
mV
V
V
mA
mA
mA
mA
mA
mA
mA
mA
mA
mA
mA
mA
mA
mA
V
V
ns
ns
7-436
Specifications CD4073BMS, CD4081BMS, CD4082BMS
TABLE 3. ELECTRICAL PERFORMANCE CHARACTERISTICS
(Continued)
LIMITS
PARAMETER
Transition Time
SYMBOL
TTHL
TTLH
CIN
CONDITIONS
VDD = 10V
VDD = 15V
Any Input
NOTES
1, 2, 3
1, 2, 3
1, 2
TEMPERATURE
+25
o
C
+25
o
C
+25
o
C
MIN
-
-
-
MAX
100
80
7.5
UNITS
ns
ns
pF
Input Capacitance
NOTES:
1. All voltages referenced to device GND.
2. The parameters listed on Table 3 are controlled via design or process and are not directly tested. These parameters are characterized
on initial design release and upon design changes which would affect these characteristics.
3. CL = 50pF, RL = 200K, Input TR, TF < 20ns.
TABLE 4. POST IRRADIATION ELECTRICAL PERFORMANCE CHARACTERISTICS
LIMITS
PARAMETER
Supply Current
N Threshold Voltage
N Threshold Voltage
Delta
P Threshold Voltage
P Threshold Voltage
Delta
Functional
SYMBOL
IDD
VNTH
∆VTN
VTP
∆VTP
F
CONDITIONS
VDD = 20V, VIN = VDD or GND
VDD = 10V, ISS = -10µA
VDD = 10V, ISS = -10µA
VSS = 0V, IDD = 10µA
VSS = 0V, IDD = 10µA
VDD = 18V, VIN = VDD or GND
VDD = 3V, VIN = VDD or GND
Propagation Delay Time
TPHL
TPLH
VDD = 5V
1, 2, 3, 4
+25
o
C
NOTES
1, 4
1, 4
1, 4
1, 4
1, 4
1
TEMPERATURE
+25
o
C
+25
o
C
+25
o
C
+25
o
C
+25
o
C
+25
o
C
MIN
-
-2.8
-
0.2
-
VOH >
VDD/2
-
MAX
2.5
-0.2
±1
2.8
±1
VOL <
VDD/2
1.35 x
+25
o
C
Limit
UNITS
µA
V
V
V
V
V
ns
NOTES: 1. All voltages referenced to device GND.
2. CL = 50pF, RL = 200K, Input TR, TF < 20ns.
3. See Table 2 for +25
o
C limit.
4. Read and Record
TABLE 5. BURN-IN AND LIFE TEST DELTA PARAMETERS +25
O
C
PARAMETER
Supply Current - SSI
Output Current (Sink)
Output Current (Source)
SYMBOL
IDD
IOL5
IOH5A
±0.1µA
±
20% x Pre-Test Reading
±
20% x Pre-Test Reading
DELTA LIMIT
TABLE 6. APPLICABLE SUBGROUPS
CONFORMANCE GROUP
Initial Test (Pre Burn-In)
Interim Test 1 (Post Burn-In)
Interim Test 2 (Post Burn-In)
PDA (Note 1)
Interim Test 3 (Post Burn-In)
PDA (Note 1)
Final Test
Group A
MIL-STD-883
METHOD
100% 5004
100% 5004
100% 5004
100% 5004
100% 5004
100% 5004
100% 5004
Sample 5005
GROUP A SUBGROUPS
1, 7, 9
1, 7, 9
1, 7, 9
1, 7, 9, Deltas
1, 7, 9
1, 7, 9, Deltas
2, 3, 8A, 8B, 10, 11
1, 2, 3, 7, 8A, 8B, 9, 10, 11
IDD, IOL5, IOH5A
READ AND RECORD
IDD, IOL5, IOH5A
IDD, IOL5, IOH5A
IDD, IOL5, IOH5A
7-437
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