MUBW 50-12 T8
Converter - Brake - Inverter Module
(CBI3)
with Trench IGBT technology
2
D11
NTC
8
9
D12
D14
2
D16
3
T7
4
0
23
24
T2
7
D13
D15
22
D7
T1
6
5
6
T4
2
D1
T3
8
7
5
T6
3
D6
D3
T5
20
9
4
D5
D2
D4
Three Phase
Rectifier
Brake
Chopper
=
55 A
Three Phase
Inverter
V
CES
= 200 V
I
C25
=
80 A
V
CE(sat)
= .7 V
V
RRM
= 600
V V
CES
= 200 V
I
FAVM
= 50 A I
C25
I
FSM
= 850 A V
CE(sat)
= .7 V
Input Rectifier Bridge D11 - D16
Symbol
V
RRM
I
FAV
I
DAVM
I
FSM
P
tot
T
C
= 80°C; sine 80°
T
C
= 80°C; rectangular; d =
/
3
; bridge
T
C
= 25°C; t = 0 ms; sine 50 Hz
T
C
= 25°C
Conditions
Maximum Ratings
600
50
40
850
25
V
A
A
A
W
Application: AC motor drives with
• Input from single or three phase grid
• Three phase synchronous or
asynchronous motor
• electric braking operation
Features
• High level of integration - only one
power semiconductor module
required for the whole drive
• IGBT technology with low saturation
voltage, low switching losses and tail
current, high RBSOA and short circuit
ruggedness
• Epitaxial free wheeling diodes with
Hiperfast and soft reverse recovery
• Industry standard package with
insulated copper base plate and
soldering pins for PCB mounting
• Temperature sense included
Symbol
Conditions
Characteristic Values
(T
VJ
= 25°C, unless otherwise specified)
min.
typ.
.5
.05
0.8
.0
max.
.3
0.05
V
V
mA
mA
K/W
V
F
I
R
R
thJC
I
F
= 50 A;
V
R
= V
RRM
;
(per diode)
T
VJ
= 25°C
T
VJ
= 25°C
T
VJ
= 25°C
T
VJ
= 25°C
IXYS reserves the right to change limits, test conditions and dimensions.
© 2006 IXYS All rights reserved
-7
0646
MUBW 50-12 T8
Output Inverter T1 - T6
Symbol
V
CES
V
GES
I
C25
I
C80
I
CM
P
tot
Symbol
Conditions
T
VJ
= 25°C to 50°C
Continuous
T
C
= 25°C
T
C
= 80°C
T
C
= 80°C; t
p
= ms
T
C
= 25°C
Conditions
Maximum Ratings
200
±
20
80
50
00
270
V
V
A
A
A
W
Characteristic Values
(T
VJ
= 25°C, unless otherwise specified)
min.
typ.
.7
2.0
5
T
VJ
= 25°C
T
VJ
= 25°C
5.8
0.7
400
3.5
470
90
50
520
90
5
6.5
V
CEK
< V
CES
- L
S
di/dt
200
0.46
max.
2.5
6.5
2.7
V
V
V
mA
mA
nA
nF
nC
ns
ns
ns
ns
mJ
mJ
V
A
K/W
V
CE(sat)
V
GE(th)
I
CES
I
GES
C
ies
Q
Gon
t
d(on)
t
r
t
d(off)
t
f
E
on
E
off
RBSOA
t
SC
(SCSOA)
R
thJC
I
C
= 50 A; V
GE
= 5 V
I
C
= 2 mA; V
GE
= V
CE
V
CE
= V
CES
; V
GE
= 0 V
V
CE
= 0 V; V
GE
=
±
20 V
T
VJ
= 25°C
T
VJ
= 25°C
V
CE
= 25 V; V
GE
= 0 V; f = MHz
V
CE
= 600 V; V
GE
= 5 V; I
C
= 50 A
Inductive load, T
VJ
= 25°C
V
CE
= 600 V; I
C
= 50 A
V
GE
= ±5 V; R
G
= 8
Ω
I
C
= I
CM
; V
GE
= 5 V
R
G
= 8
Ω;
T
VJ
= 25°C
V
CE
= 720 V; V
GE
=
±
5 V; R
G
= 8
Ω
t
P
< 0 µs; non-repetitive; T
VJ
= 25°C
Output Inverter D1 - D6
Symbol
I
F25
I
F80
Symbol
V
F
I
RM
Q
rr
t
rr
E
rec
R
thJC
Conditions
T
C
= 25°C
T
C
= 80°C
Conditions
I
F
= 50 A;
T
VJ
= 25°C
T
VJ
= 25°C
Maximum Ratings
00
50
A
A
Characteristic Values
min.
typ.
2.
.6
90
0
60
4
0.65
max.
2.6
V
V
A
µC
ns
mJ
K/W
I
F
= 60 A; di
F
/dt = -200 A/µs;
T
VJ
= 25°C; V
R
= 600 V; V
GE
= 0 V
(per diode)
IXYS reserves the right to change limits, test conditions and dimensions.
© 2006 IXYS All rights reserved
2-7
0646
MUBW 50-12 T8
Brake Chopper T7
Symbol
V
CES
V
GES
I
C25
I
C80
I
CM
P
tot
Symbol
Conditions
T
VJ
= 25°C to 50°C
Continuous
T
C
= 25°C
T
C
= 80°C
T
C
= 80°C; t
p
= ms
T
C
= 25°C
Conditions
Maximum Ratings
200
±
20
55
35
70
200
V
V
A
A
A
W
Characteristic Values
(T
VJ
= 25°C, unless otherwise specified)
min.
typ.
.7
2.0
5
T
VJ
= 25°C
T
VJ
= 25°C
5.8
0.3
400
2.5
330
90
50
520
90
4.8
V
CEK
< V
CES
- L
S
di/dt
40
0.62
max.
2.5
6.5
0.25
V
V
V
mA
mA
nA
nF
nC
ns
ns
ns
ns
mJ
V
A
K/W
V
CE(sat)
V
GE(th)
I
CES
I
GES
C
ies
Q
Gon
t
d(on)
t
r
t
d(off)
t
f
E
off
RBSOA
t
SC
(SCSOA)
R
thJC
I
C
= 35 A; V
GE
= 5 V
I
C
= .5 mA; V
GE
= V
CE
V
CE
= V
CES
; V
GE
= 0 V
V
CE
= 0 V; V
GE
=
±
20 V
T
VJ
= 25°C
T
VJ
= 25°C
V
CE
= 25 V; V
GE
= 0 V; f = MHz
V
CE
= 600 V; V
GE
= 5 V; I
C
= 35 A
Inductive load, T
VJ
= 25°C
V
CE
= 600 V; I
C
= 35 A
V
GE
= ±5 V; R
G
= 27
Ω
I
C
= I
CM
; V
GE
= 5 V
R
G
= 27
Ω;
T
VJ
= 25°C
V
CE
= 720 V; V
GE
=
±
5 V; R
G
= 27
Ω
t
P
< 0 µs; non-repetitive; T
VJ
= 25°C
Brake Chopper D7
Symbol
V
RRM
I
F25
I
F80
Symbol
V
F
I
R
R
thJC
Conditions
T
VJ
= 25°C to 50°C
T
C
= 25°C
T
C
= 80°C
Conditions
I
F
= 35 A;
V
R
= V
RRM
;
(per diode)
T
VJ
= 25°C
T
VJ
= 25°C
T
VJ
= 25°C
T
VJ
= 25°C
Maximum Ratings
200
48
30
V
A
A
Characteristic Values
min.
typ.
2.5
2.0
0.5
.2
max.
3.3
0.25
V
V
mA
mA
K/W
IXYS reserves the right to change limits, test conditions and dimensions.
© 2006 IXYS All rights reserved
3-7
0646
MUBW 50-12 T8
Temperature Sensor NTC
Symbol
R
25
B
25/50
Module
Symbol
T
VJ
T
JM
T
stg
V
ISO
M
d
Symbol
R
therm-chip
Conditions
operating
Maximum Ratings
-40...+25
+50
-40...+25
2500
3-6
°C
°C
°C
V~
Nm
Conditions
T = 25°C
Characteristic Values
min.
4.75
typ.
5.0
3375
max.
5.25
kΩ
K
I
ISOL
< mA; 50/60 Hz
Mounting torque (M5)
Conditions
Characteristic Values
min.
typ.
max.
Resistance terminal to chip
Creepage distance on surface
Strike distance in air
with heatsink compound
6
6
5
mΩ
mm
mm
d
S
d
A
R
thCH
Weight
0.0
300
K/W
g
Dimensions in mm (1 mm = 0.0394")
IXYS reserves the right to change limits, test conditions and dimensions.
© 2006 IXYS All rights reserved
4-7
0646
MUBW 50-12 T8
Input Rectifier Bridge D11 - D16
100
80
60
I
F
40
[A]
20
0
0.4
T
VJ
= 125°C
T
VJ
= 25°C
100
200
500
A
400
T
VJ
= 45°C
2
10
4
As
It
T
VJ
= 45°C
2
I
FSM
300
T
VJ
= 150°C
10
3
T
VJ
= 150°C
0.6
0.8
1.0
1.2
1.4
0
0.001
50Hz, 80% V
RRM
0.01
0.1
s
t
1
10
2
1
2
3
4
5 6 7 8 910
V
F
[V]
t
ms
Fig. Typ. forward current vs.
voltage drop per diode
450
400
160
A
W
140
350
P
tot
300
250
200
150
100
50
0
0
20
40
60
80 100 120 140 160 180 0
A
20
40
60
R
thA
:
0.05 K/W
0.15 K/W
0.3 K/W
0.5 K/W
1 K/W
2 K/W
5 K/W
120
I
d(AV)
100
80
60
40
20
80 100 120 140
C
T
amb
0
0
20
40
60
I
d(AV)M
80 100 120 140
C
T
C
1
Z
thJC
0.1
[K/W]
0.01
0.001
0.01
0.1
t
[s]
1
10
Fig. 2 Transient thermal impedance junction to case
0646
IXYS reserves the right to change limits, test conditions and dimensions.
© 2006 IXYS All rights reserved
5-7
京公网安备 11010802033920号
Copyright © 2005-2026 EEWORLD.com.cn, Inc. All rights reserved
电子工程世界
