PD-94299E
IRHNA67160
JANSR2N7579U2
RADIATION HARDENED
POWER MOSFET
SURFACE MOUNT (SMD-2)
Product Summary
Part Number
IRHNA67160
IRHNA63160
Radiation Level
100 kRads(Si)
300 kRads(Si)
RDS(on)
0.010
0.010
I
D
56A*
56A*
QPL Part Number
JANSR2N7579U2
JANSF2N7579U2
SMD-2
100V, N-CHANNEL
REF: MIL-PRF-19500/760
R
TECHNOLOGY
6
Description
IRHNA67160 is part of the International Rectifier HiRel
family of products. IR HiRel R6 technology provides high
performance power MOSFETs for space applications.
These devices have been characterized for both Total
Dose and Single Event Effect (SEE) with useful
performance up to LET of 90 (MeV/(mg/cm
2
). The
combination of low R
DS
(on) and low gate charge reduces
the power losses in switching applications such as DC-DC
converters and motor controllers. These devices retain all
of the well established advantages of MOSFETs such as
voltage control, fast switching and temperature stability of
electrical parameters.
Features
Single Event Effect (SEE) Hardened
Low RDS(on)
Low Total Gate Charge
Simple Drive Requirements
Hermetically Sealed
Ceramic Package
Light Weight
Surface Mount
ESD Rating: Class 3A per MIL-STD-750,
Method 1020
Absolute Maximum Ratings
Symbol
I
D1
@ V
GS
= 12V, T
C
= 25°C
I
DM
@ T
C
= 25°C
P
D
@T
C
= 25°C
V
GS
E
AS
I
AR
E
AR
dv/dt
T
J
T
STG
Pre-Irradiation
Parameter
Value
56*
56*
224
250
2.0
±20
462
56
25
5.0
-55 to + 150
300 (for 5s)
3.3 (Typical)
g
W
W/°C
V
mJ
A
mJ
V/ns
°C
A
Units
Continuous Drain Current
Pulsed Drain Current
Maximum Power Dissipation
Linear Derating Factor
Gate-to-Source Voltage
Single Pulse Avalanche Energy
Avalanche Current
Repetitive Avalanche Energy
Peak Diode Recovery dv/dt
Operating Junction and
Storage Temperature Range
Lead Temperature
Weight
I
D2
@ V
GS
= 12V, T
C
= 100°C Continuous Drain Current
* Current is limited by package
For Footnotes, refer to the page 2.
1
International Rectifier HiRel Products, Inc.
2018-07-30
IRHNA67160
JANSR2N7579U2
Pre-Irradiation
Electrical Characteristics @ Tj = 25°C (Unless Otherwise Specified)
Symbol
BV
DSS
BV
DSS
/T
J
R
DS(on)
V
GS(th)
V
GS(th)
/T
J
Gfs
I
DSS
I
GSS
Q
G
Q
GS
Q
GD
t
d(on)
Tr
t
d(off)
Tf
Ls +L
D
C
iss
C
oss
C
rss
R
G
Parameter
Drain-to-Source Breakdown Voltage
Breakdown Voltage Temp. Coefficient
Static Drain-to-Source On-Resistance
Gate Threshold Voltage
Gate Threshold Voltage Coefficient
Forward Transconductance
Zero Gate Voltage Drain Current
Gate-to-Source Leakage Forward
Gate-to-Source Leakage Reverse
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain (‘Miller’) Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Total Inductance
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Gate Resistance
Min. Typ. Max. Units
100
–––
–––
––– –––
0.11 –––
––– 0.010
V
V/°C
Test Conditions
V
GS
= 0V, I
D
= 1.0mA
Reference to 25°C, I
D
= 1.0mA
V
GS
= 12V, I
D2
= 56A*
2.0
–––
4.0
––– -10.12 –––
60
––– –––
––– –––
10
––– –––
25
––– ––– 100
––– ––– -100
––– ––– 170
––– –––
60
––– –––
80
––– –––
50
––– ––– 150
––– ––– 100
––– –––
50
–––
–––
–––
–––
–––
2.8
8690
1600
20
0.45
–––
–––
–––
–––
–––
V
V
DS
= V
GS
, I
D
= 1.0mA
mV/°C
S
V
DS
= 15V, I
D2
= 56A
V
DS
= 80V, V
GS
= 0V
µA
V
DS
= 80V,V
GS
= 0V,T
J
=125°C
V
GS
= 20V
nA
V
GS
= -20V
I
D1
= 56A
nC
V
DS
= 50V
V
GS
= 12V
V
DD
= 50V
I
D1
= 56A
ns
R
G
= 2.35
V
GS
= 12V
nH
Measured from center of Drain
pad to center of Source pad
V
GS
= 0V
V
DS
= 25V
ƒ = 1.0MHz
ƒ = 1.0MHz, open drain
pF
Source-Drain Diode Ratings and Characteristics
Symbol
I
S
I
SM
V
SD
t
rr
Q
rr
t
on
Parameter
Continuous Source Current (Body Diode)
Pulsed Source Current (Body Diode)
Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge
Forward Turn-On Time
Min. Typ. Max. Units
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
56*
224
1.2
500
5.5
A
V
ns
µC
Test Conditions
T
J
=25°C, I
S
= 56A, V
GS
=0V
T
J
=25°C, I
F
= 56A,V
DD
≤
25V
di/dt = 100A/µs
Intrinsic turn-on time is negligible (turn-on is dominated by L
S
+L
D
)
* Current is limited by package
Thermal Resistance
Symbol
R
JC
R
J-PCB
Junction-to-Case
Junction-to-PC Board (Soldered to 2” sq copper clad board)
Parameter
Min.
–––
–––
Typ.
–––
1.6
Max.
0.5
–––
Units
°C/W
Footnotes:
Repetitive Rating; Pulse width limited by maximum junction temperature.
DD
= 25V, starting T
J
= 25°C, L = 0.29mH, Peak I
L
= 56A, V
GS
= 12V
V
I
SD
56A, di/dt
640A/µs, V
DD
100V, T
J
150°C
Pulse width
300 µs; Duty Cycle
2%
Total Dose Irradiation with V
GS
Bias.
12 volt V
GS
applied and V
DS
= 0 during irradiation per MIL-STD-750, Method 1019, condition A.
Total Dose Irradiation with V
DS
Bias.
80 volt V
DS
applied and V
GS
= 0 during irradiation per MlL-STD-750, Method 1019, condition A.
2
International Rectifier HiRel Products, Inc.
2018-07-30
IRHNA67160
JANSR2N7579U2
Radiation Characteristics
Pre-Irradiation
IR HiRel radiation hardened MOSFETs are tested to verify their radiation hardness capability. The hardness assurance
program at IR Hirel is comprised of two radiation environments. Every manufacturing lot is tested for total ionizing dose
(per notes 5 and 6) using the TO-3 package. Both pre- and post-irradiation performance are tested and specified using
the same drive circuitry and test conditions in order to provide a direct comparison.
Table1. Electrical Characteristics @ Tj = 25°C, Post Total Dose Irradiation
Symbol
BV
DSS
V
GS(th)
I
GSS
I
GSS
I
DSS
R
DS(on)
R
DS(on)
V
SD
Parameter
Drain-to-Source Breakdown Voltage
Gate Threshold Voltage
Gate-to-Source Leakage Forward
Gate-to-Source Leakage Reverse
Zero Gate Voltage Drain Current
Static Drain-to-Source
On-State Resistance (TO-3)
Static Drain-to-Source
On-State Resistance (SMD-2)
Diode Forward Voltage
Up to 300 kRads (Si)
1
Min.
100
2.0
–––
–––
–––
–––
–––
–––
Max.
–––
4.0
100
-100
10
0.011
0.010
1.2
V
V
nA
nA
µA
V
V
GS
= 0V, I
D
= 1.0mA
V
DS
= V
GS
, I
D
= 1.0mA
V
GS
= 20V
V
GS
= -20V
V
DS
= 80V, V
GS
= 0V
V
GS
= 12V, I
D2
= 56A
V
GS
= 12V, I
D2
= 56A
V
GS
= 0V, I
S
= 56A
Units
Test Conditions
1. Part numbers IRHNA67160 (JANSR2N7579U2) and IRHNA63160 (JANSF2N7579U2)
IR HiRel radiation hardened MOSFETs have been characterized in heavy ion environment for Single Event Effects
(SEE). Single Event Effects characterization is illustrated in Fig. a and Table 2.
Table 2. Typical Single Event Effect Safe Operating Area
LET
(MeV/(mg/cm
2
))
39 ± 5%
61 ± 5%
90 ± 5%
Energy
(MeV)
315 ± 7.5%
345 ± 7.5%
375 ± 7.5%
Range
(µm)
40 ± 7.5%
32 ± 7.5%
29 ± 7.5%
VDS (V)
@ VGS = @ VGS = @ VGS = @ VGS = @ VGS = @ VGS =
0V
-5V
-10V
-15V
-19V
-20V
100
100
100
100
100
100
100
100
–––
100
30
–––
100
–––
–––
40
–––
–––
120
100
80
60
40
20
0
0
-5
-10
Bias VGS (V)
-15
-20
Bias VDS (V)
LET=39 ± 5%
LET=61 ± 5%
LET=90 ± 5%
Fig a.
Typical Single Event Effect, Safe Operating Area
For Footnotes, refer to the page 2.
3
International Rectifier HiRel Products, Inc.
2018-07-30
IRHNA67160
JANSR2N7579U2
Pre-Irradiation
1000
VGS
15V
12V
10V
9.0V
8.0V
7.0V
6.0V
BOTTOM 5.0V
TOP
ID, Drain-to-Source Current (A)
100
5.0V
10
60s PULSE WIDTH
Tj = 150°C
1
0.1
1
10
100
VDS , Drain-to-Source Voltage (V)
Fig 1.
Typical Output Characteristics
1000
R DS(on) , Drain-to-Source On Resistance
(Normalized)
2.5
Fig 2.
Typical Output Characteristics
ID = 56A
2.0
ID, Drain-to-Source Current (A)
100
T J = 150°C
1.5
T J = 25°C
10
1.0
0.5
1.0
5
5.5
6
6.5
VDS = 25V
6s PULSE WIDTH
7
7.5
8
8.5
9
VGS = 12V
0.0
-60 -40 -20
0
20
40
60
80 100 120 140 160
VGS, Gate-to-Source Voltage (V)
T J , Junction Temperature (°C)
Fig 3.
Typical Transfer Characteristics
RDS(on) , Drain-to -Source On Resistance (m
)
Fig 4.
Normalized On-Resistance Vs.
Temperature
R DS(on), Drain-to -Source On Resistance (m
)
30
25
20
15
10
5
0
4
6
8
10
12
14
16
18
20
T J = 150°C
T J = 25°C
ID = 56A
20
T J = 150°C
15
10
T J = 25°C
5
VGS = 12V
0
0
40
80
120
160
200
240
ID, Drain Current (A)
VGS, Gate -to -Source Voltage (V)
Fig 5.
Typical On-Resistance Vs Gate Voltage
4
Fig 6.
Typical On-Resistance Vs Drain Current
2018-07-30
International Rectifier HiRel Products, Inc.
IRHNA67160
JANSR2N7579U2
Pre-Irradiation
V(BR)DSS, Drain-to-Source Breakdown Voltage (V)
130
5.5
ID = 1.0mA
5.0
VGS(th) Gate threshold Voltage (V)
125
4.5
4.0
3.5
3.0
2.5
2.0
1.5
1.0
0.5
0.0
120
115
110
105
ID = 50µA
ID = 250µA
ID = 1.0mA
ID = 150mA
-60 -40 -20
0
20
40
60
80 100 120 140 160
100
-60 -40 -20
0
20
40
60
80 100 120 140 160
T J , Temperature ( °C )
T J , Temperature ( °C )
Fig 7.
Typical Drain-to-Source
Breakdown Voltage Vs Temperature
14000
12000
10000
8000
6000
4000
2000
0
1
10
100
VGS = 0V,
f = 1 MHz
C iss = C gs + Cgd, C ds SHORTED
C rss = C gd
C oss = Cds + Cgd
Fig 8.
Typical Threshold Voltage Vs
Temperature
C, Capacitance (pF)
C iss
C oss
C rss
VDS, Drain-to-Source Voltage (V)
Fig 9.
Typical Capacitance Vs.
Drain-to-Source Voltage
1000
120
Fig 10.
Typical Gate Charge Vs.
Gate-to-Source Voltage
LIMIT ED BY PACKAGE
ISD, Reverse Drain Current (A)
100
100
I
D
, D rain C urrent (A)
T J = 150°C
80
T J = 25°C
60
10
40
20
VGS = 0V
1.0
0.4
0.6
0.8
1.0
1.2
1.4
VSD , Source-to-Drain Voltage (V)
0
25
50
75
100
125
150
T
C
, Case Temperature
( °C)
Fig 11.
Typical Source-Drain Diode Forward Voltage
5
Fig 12.
Maximum Drain Current Vs.Case Temperature
2018-07-30
International Rectifier HiRel Products, Inc.
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