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OM6501ST: 产品描述Insulated Gate Bipolar Transistor, 5A I(C), 500V V(BR)CES, N-Channel, TO-257AA, HERMETIC SEALED, METAL, TO-257AA, 3 PIN; 产品类别分立半导体晶体管; 文件大小19KB，共2页; 制造商International Rectifier （ Infineon ）; 官网地址http://www.irf.com/

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OM6501ST概述

Insulated Gate Bipolar Transistor, 5A I(C), 500V V(BR)CES, N-Channel, TO-257AA, HERMETIC SEALED, METAL, TO-257AA, 3 PIN

OM6501ST规格参数

参数名称	属性值
是否无铅	含铅
是否Rohs认证	不符合
厂商名称	International Rectifier （ Infineon ）
零件包装代码	TO-257AA
包装说明	FLANGE MOUNT, S-MSFM-P3
针数	3
Reach Compliance Code	compliant
Is Samacsys	N
其他特性	LOW CONDUCTION LOSS
外壳连接	ISOLATED
最大集电极电流 (IC)	5 A
集电极-发射极最大电压	500 V
配置	SINGLE
门极发射器阈值电压最大值	4 V
JEDEC-95代码	TO-257AA
JESD-30 代码	S-MSFM-P3
JESD-609代码	e0
元件数量	1
端子数量	3
最高工作温度	150 °C
封装主体材料	METAL
封装形状	SQUARE
封装形式	FLANGE MOUNT
峰值回流温度（摄氏度）	NOT SPECIFIED
极性/信道类型	N-CHANNEL
最大功率耗散 (Abs)	35 W
认证状态	Not Qualified
表面贴装	NO
端子面层	TIN LEAD
端子形式	PIN/PEG
端子位置	SINGLE
处于峰值回流温度下的最长时间	NOT SPECIFIED
晶体管应用	POWER CONTROL
晶体管元件材料	SILICON
标称接通时间 (ton)	187 ns
Base Number Matches	1

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OM6501ST

OM6502ST

INSULATED GATE BIPOLAR TRANSISTOR

(IGBT) IN A HERMETIC TO-257AA PACKAGE

500 Volt, 5 And 10 Amp, N-Channel IGBT

In A Hermetic Metal Package

FEATURES

•

Isolated Hermetic Metal Package

High Input Impedance

Low On-Voltage

High Current Capability

Fast Turn-Off

Low Conductive Losses

Available Screened to MIL-S-19500, TX, TXV And S Levels

DESCRIPTION

The IGBT power transistor features a high impedance insulated gate and a low

on-resistance characteristic of bipolar transistors. These devices are ideally suited

for motor drives, UPS converters, power supplies and resonant power converters.

MAXIMUM RATINGS

@ 25°C Unless Specified Otherwise

PART

NUMBER

OM6501ST

OM6502ST

(Cont.)

@ 90°C, A

(BR)CES

500

CE (sat)

(Typ.)

2.8

(Typ.)

400

°C/W

3.8

3.0

°C

150

3.1

SCHEMATIC

Collector

MECHANICAL OUTLINE

.420

.410

.200

.190

.045

.035

.665

.645

PACKAGE OPTIONS

.150

.140

1 2 3

C E G

.537

.527

.430

.410

.038 MAX.

Gate

.750

.500

MOD PAK

.005

Emitter

.035

.025

.100 TYP.

.120 TYP.

Pin 1: Collector

Pin 2: Emitter

Pin 3: Gate

6 PIN SIP

Note: IGBTs are also available in Z-Tab, dual and quad pak styles - Please call the factory for more information.

4 11 R2

Supersedes 2 07 R1

3.1 - 139

OM6501ST相似产品对比

	OM6501ST	OM6502ST	OM6502STT	OM6501STT
描述	Insulated Gate Bipolar Transistor, 5A I(C), 500V V(BR)CES, N-Channel, TO-257AA, HERMETIC SEALED, METAL, TO-257AA, 3 PIN	Insulated Gate Bipolar Transistor, 10A I(C), 500V V(BR)CES, N-Channel, TO-257AA, HERMETIC SEALED, METAL, TO-257AA, 3 PIN	Insulated Gate Bipolar Transistor, 10A I(C), 500V V(BR)CES, N-Channel, TO-257AA, HERMETIC SEALED, METAL, TO-257AA, 3 PIN	Insulated Gate Bipolar Transistor, 5A I(C), 500V V(BR)CES, N-Channel, TO-257AA, HERMETIC SEALED, METAL, TO-257AA, 3 PIN
是否无铅	含铅	含铅	含铅	含铅
是否Rohs认证	不符合	不符合	不符合	不符合
厂商名称	International Rectifier （ Infineon ）	International Rectifier （ Infineon ）	International Rectifier （ Infineon ）	International Rectifier （ Infineon ）
零件包装代码	TO-257AA	TO-257AA	TO-257AA	TO-257AA
包装说明	FLANGE MOUNT, S-MSFM-P3	FLANGE MOUNT, S-MSFM-P3	FLANGE MOUNT, S-MSFM-P3	FLANGE MOUNT, S-MSFM-P3
针数	3	3	3	3
Reach Compliance Code	compliant	compliant	compliant	compliant
其他特性	LOW CONDUCTION LOSS	LOW CONDUCTION LOSS	LOW CONDUCTION LOSS	LOW CONDUCTION LOSS
外壳连接	ISOLATED	ISOLATED	ISOLATED	ISOLATED
最大集电极电流 (IC)	5 A	10 A	10 A	5 A
集电极-发射极最大电压	500 V	500 V	500 V	500 V
配置	SINGLE	SINGLE	SINGLE	SINGLE
JEDEC-95代码	TO-257AA	TO-257AA	TO-257AA	TO-257AA
JESD-30 代码	S-MSFM-P3	S-MSFM-P3	S-MSFM-P3	S-MSFM-P3
JESD-609代码	e0	e0	e0	e0
元件数量	1	1	1	1
端子数量	3	3	3	3
最高工作温度	150 °C	150 °C	150 °C	150 °C
封装主体材料	METAL	METAL	METAL	METAL
封装形状	SQUARE	SQUARE	SQUARE	SQUARE
封装形式	FLANGE MOUNT	FLANGE MOUNT	FLANGE MOUNT	FLANGE MOUNT
峰值回流温度（摄氏度）	NOT SPECIFIED	NOT SPECIFIED	NOT SPECIFIED	NOT SPECIFIED
极性/信道类型	N-CHANNEL	N-CHANNEL	N-CHANNEL	N-CHANNEL
认证状态	Not Qualified	Not Qualified	Not Qualified	Not Qualified
表面贴装	NO	NO	NO	NO
端子面层	TIN LEAD	TIN LEAD	TIN LEAD	TIN LEAD
端子形式	PIN/PEG	PIN/PEG	PIN/PEG	PIN/PEG
端子位置	SINGLE	SINGLE	SINGLE	SINGLE
处于峰值回流温度下的最长时间	NOT SPECIFIED	NOT SPECIFIED	NOT SPECIFIED	NOT SPECIFIED
晶体管应用	POWER CONTROL	POWER CONTROL	POWER CONTROL	POWER CONTROL
晶体管元件材料	SILICON	SILICON	SILICON	SILICON
标称接通时间 (ton)	187 ns	150 ns	150 ns	187 ns

OM6501ST

OM6501ST概述

OM6501ST规格参数

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OM6501ST相似产品对比

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