BD840概述

TRANSISTOR 1.5 A, 45 V, PNP, Si, POWER TRANSISTOR, TO-202, BIP General Purpose Power

BD840规格参数

	BD840	BD842	BD844
描述	TRANSISTOR 1.5 A, 45 V, PNP, Si, POWER TRANSISTOR, TO-202, BIP General Purpose Power	TRANSISTOR 1.5 A, 60 V, PNP, Si, POWER TRANSISTOR, TO-202, BIP General Purpose Power	TRANSISTOR 1.5 A, 80 V, PNP, Si, POWER TRANSISTOR, TO-202, BIP General Purpose Power
厂商名称	NXP(恩智浦)	NXP(恩智浦)	NXP(恩智浦)
包装说明	FLANGE MOUNT, R-PSFM-T3	FLANGE MOUNT, R-PSFM-T3	FLANGE MOUNT, R-PSFM-T3
Reach Compliance Code	unknown	compliant	unknown
ECCN代码	EAR99	EAR99	EAR99
外壳连接	COLLECTOR	COLLECTOR	COLLECTOR
最大集电极电流 (IC)	1.5 A	1.5 A	1.5 A
集电极-发射极最大电压	45 V	60 V	80 V
配置	SINGLE	SINGLE	SINGLE
最小直流电流增益 (hFE)	25	25	25
JEDEC-95代码	TO-202	TO-202	TO-202
JESD-30 代码	R-PSFM-T3	R-PSFM-T3	R-PSFM-T3
元件数量	1	1	1
端子数量	3	3	3
最高工作温度	150 °C	150 °C	150 °C
封装主体材料	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY
封装形状	RECTANGULAR	RECTANGULAR	RECTANGULAR
封装形式	FLANGE MOUNT	FLANGE MOUNT	FLANGE MOUNT
极性/信道类型	PNP	PNP	PNP
功耗环境最大值	10 W	10 W	10 W
认证状态	Not Qualified	Not Qualified	Not Qualified
表面贴装	NO	NO	NO
端子形式	THROUGH-HOLE	THROUGH-HOLE	THROUGH-HOLE
端子位置	SINGLE	SINGLE	SINGLE
晶体管应用	AMPLIFIER	AMPLIFIER	AMPLIFIER
晶体管元件材料	SILICON	SILICON	SILICON
标称过渡频率 (fT)	50 MHz	50 MHz	50 MHz
VCEsat-Max	0.8 V	0.8 V	0.8 V

器件捷径: E0 E1 E2 E3 E4 E5 E6 E7 E8 E9 EA EB EC ED EE EF EG EH EI EJ EK EL EM EN EO EP EQ ER ES ET EU EV EW EX EY EZ F0 F1 F2 F3 F4 F5 F6 F7 F8 F9 FA FB FC FD FE FF FG FH FI FJ FK FL FM FN FO FP FQ FR FS FT FU FV FW FX FY FZ G0 G1 G2 G3 G4 G5 G6 G7 G8 G9 GA GB GC GD GE GF GG GH GI GJ GK GL GM GN GO GP GQ GR GS GT GU GV GW GX GZ H0 H1 H2 H3 H4 H5 H6 H7 H8 HA HB HC HD HE HF HG HH HI HJ HK HL HM HN HO HP HQ HR HS HT HU HV HW HX HY HZ I1 I2 I3 I4 I5 I6 I7 IA IB IC ID IE IF IG IH II IK IL IM IN IO IP IQ IR IS IT IU IV IW IX J0 J1 J2 J6 J7 JA JB JC JD JE JF JG JH JJ JK JL JM JN JP JQ JR JS JT JV JW JX JZ K0 K1 K2 K3 K4 K5 K6 K7 K8 K9 KA KB KC KD KE KF KG KH KI KJ KK KL KM KN KO KP KQ KR KS KT KU KV KW KX KY KZ