®
MJ802
SILICON NPN POWER TRANSISTOR
s
STMicroelectronics PREFERRED
SALESTYPE
DESCRIPTION
The MJ802 is a silicon Epitaxial-Base power
transistor mounted in Jedec TO-3 metal case. It
is intended for general purpose power amplifier
and switching applications.
1
bs
O
I
C
I
B
P
tot
T
stg
T
j
et
l
o
ro
P
e
uc
d
s)
t(
O
-
so
b
te
le
ro
P
2
TO-3
uc
d
s)
t(
INTERNAL SCHEMATIC DIAGRAM
ABSOLUTE MAXIMUM RATINGS
Symbol
V
CEO
V
CBO
V
EBO
Parameter
Collector-emitter Voltage (I
B
= 0)
Collector-base Voltage (I
E
= 0)
Emitter-Base Voltage (I
C
= 0)
Collector Current
Base Current
Total Dissipation at T
c
≤
25
o
C
Storage Temperature
Max. Operating Junction Temperature
Value
90
100
4
30
7.5
200
-65 to 200
200
Unit
V
V
V
A
A
W
o
o
C
C
October 2003
1/4
MJ802
THERMAL DATA
R
thj-case
Thermal Resistance Junction-case
Max
0.875
o
C/W
ELECTRICAL CHARACTERISTICS
(T
case
= 25
o
C unless otherwise specified)
Symbol
I
CBO
I
EBO
Parameter
Collector Cut-off
Current (I
E
= 0)
Emitter Cut-off Current
(I
C
= 0)
Test Conditions
V
CB
= 100 V
V
CB
= 100 V
V
EB
= 4 V
I
C
= 200 mA
90
T
case
= 150 C
o
Min.
Typ.
Max.
1
5
1
Unit
mA
mA
mA
V
CEO(sus)
∗
Collector-Emitter
Sustaining Voltage
(I
B
= 0)
V
CER(sus)
∗
Collector-emitter
Sustaining Voltage
(R
BE
= 100
Ω)
V
CE(sat)
∗
V
BE(sat)
∗
V
BE
∗
h
FE
∗
f
T
Collector-Emitter
Saturation Voltage
Base-Emitter
Saturation Voltage
Base-Emitter Voltage
DC Current Gain
Transition Frequency
I
C
= 200 mA
100
I
C
= 7.5 A
I
C
= 7.5 A
I
C
= 7.5 A
I
C
= 7.5 A
I
C
= 1 A
f = 1 MHz
I
B
= 0.75 A
I
B
= 0.75 A
V
CE
= 2 V
V
CE
= 2 V
∗
Pulsed: Pulse duration = 300
µs,
duty cycle 1.5 %
bs
O
et
l
o
ro
P
e
uc
d
s)
t(
O
-
V
CE
= 10 V
so
b
t
le
P
e
25
2
ro
uc
d
s)
t(
V
V
V
V
V
0.8
1.3
1.3
100
MHz
2/4
MJ802
bs
O
et
l
o
ro
P
e
uc
d
s)
t(
O
-
so
b
te
le
ro
P
uc
d
s)
t(
Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences
of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is
granted by implication or otherwise under any patent or patent rights of STMicroelectronics. Specification mentioned in this publication are
subject to change without notice. This publication supersedes and replaces all information previously supplied. STMicroelectronics products
are not authorized for use as critical components in life support devices or systems without express written approval of STMicroelectronics.
The ST logo is a trademark of STMicroelectronics.
All other names are the property of their respective owners.
© 2003 STMicroelectronics – All Rights reserved
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