MJD31 (NPN), MJD32 (PNP)
Complementary Power
Transistors
DPAK For Surface Mount Applications
Designed for general purpose amplifier and low speed switching
applications.
Features
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•
•
•
•
•
•
Lead Formed for Surface Mount Applications in Plastic Sleeves
Straight Lead Version in Plastic Sleeves (“1” Suffix)
Lead Formed Version in 16 mm Tape and Reel (“T4” Suffix)
Electrically Similar to Popular TIP31 and TIP32 Series
Epoxy Meets UL 94, V−0 @ 0.125 in
NJV Prefix for Automotive and Other Applications Requiring
Unique Site and Control Change Requirements; AEC−Q101
Qualified and PPAP Capable
•
These Devices are Pb−Free and are RoHS Compliant
MAXIMUM RATINGS
Rating
Collector−Emitter Voltage
MJD31, MJD32
MJD31C, MJD32C
Collector−Base Voltage
MJD31, MJD32
MJD31C, MJD32C
Emitter−Base Voltage
Collector Current − Continuous
Collector Current − Peak
Base Current
Total Power Dissipation
@ T
C
= 25°C
Derate above 25°C
Total Power Dissipation
@ T
A
= 25°C
Derate above 25°C
Operating and Storage Junction Temperature
Range
ESD − Human Body Model
ESD − Machine Model
Symbol
V
CEO
40
100
V
CB
40
100
V
EB
I
C
I
CM
I
B
P
D
15
0.12
P
D
1.56
0.012
T
J
, T
stg
HBM
MM
−65 to
+ 150
3B
C
5.0
3.0
5.0
1.0
Vdc
Adc
Adc
Adc
W
W/°C
W
W/°C
°C
V
V
Vdc
Max
Unit
Vdc
SILICON
POWER TRANSISTORS
3 AMPERES
40 AND 100 VOLTS
15 WATTS
COMPLEMENTARY
COLLECTOR
2,4
COLLECTOR
2,4
1
BASE
3
EMITTER
1
BASE
3
EMITTER
4
4
1 2
3
DPAK
CASE 369C
STYLE 1
1
3
IPAK
CASE 369D
STYLE 1
2
MARKING DIAGRAMS
AYWW
J3xxG
DPAK
A
Y
WW
xx
G
YWW
J3xxG
IPAK
= Site Code
= Year
= Work Week
= 1, 1C, 2, or 2C
= Pb−Free Package
Stresses exceeding those listed in the Maximum Ratings table may damage
the device. If any of these limits are exceeded, device functionality should not
be assumed, damage may occur and reliability may be affected.
THERMAL CHARACTERISTICS
Characteristic
Thermal Resistance, Junction−to−Case
Thermal Resistance, Junction−to−Ambient*
Lead Temperature for Soldering Purposes
Symbol
R
qJC
R
qJA
T
L
Max
8.3
80
260
Unit
°C/W
°C/W
°C
ORDERING INFORMATION
See detailed ordering and shipping information in the package
dimensions section on page 8 of this data sheet.
*These ratings are applicable when surface mounted on the minimum pad sizes recommended.
©
Semiconductor Components Industries, LLC, 2016
1
September, 2016 − Rev. 16
Publication Order Number:
MJD31/D
MJD31 (NPN), MJD32 (PNP)
ELECTRICAL CHARACTERISTICS
(T
C
= 25_C unless otherwise noted)
Characteristic
OFF CHARACTERISTICS
Collector−Emitter Sustaining Voltage (Note 1)
(I
C
= 30 mAdc, I
B
= 0)
MJD31, MJD32
MJD31C, MJD32C
Collector Cutoff Current
(V
CE
= 40 Vdc, I
B
= 0)
MJD31, MJD32
(V
CE
= 60 Vdc, I
B
= 0)
MJD31C, MJD32C
Collector Cutoff Current
(V
CE
= Rated V
CEO
, V
EB
= 0)
Emitter Cutoff Current
(V
BE
= 5 Vdc, I
C
= 0)
ON CHARACTERISTICS
(Note 1)
DC Current Gain
(I
C
= 1 Adc, V
CE
= 4 Vdc)
(I
C
= 3 Adc, V
CE
= 4 Vdc)
Collector−Emitter Saturation Voltage
(I
C
= 3 Adc, I
B
= 375 mAdc)
Base−Emitter On Voltage
(I
C
= 3 Adc, V
CE
= 4 Vdc)
DYNAMIC CHARACTERISTICS
Current Gain − Bandwidth Product (Note 2)
(I
C
= 500 mAdc, V
CE
= 10 Vdc, f
test
= 1 MHz)
Small−Signal Current Gain
(I
C
= 0.5 Adc, V
CE
= 10 Vdc, f = 1 kHz)
f
T
3
h
fe
20
−
−
MHz
h
FE
25
10
V
CE(sat)
−
V
BE(on)
−
1.8
1.2
Vdc
−
50
Vdc
V
CEO(sus)
40
100
I
CEO
−
−
ICES
−
I
EBO
−
1
20
mAdc
50
50
mAdc
−
−
mAdc
Vdc
Symbol
Min
Max
Unit
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.
1. Pulse Test: Pulse Width
v
300
ms,
Duty Cycle
v
2%.
2. f
T
=
⎪h
fe
⎪•
f
test
.
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2
MJD31 (NPN), MJD32 (PNP)
TYPICAL CHARACTERISTICS
T
A
T
C
2.5 25
PD, POWER DISSIPATION (WATTS)
25
ms
2 20
+11 V
0
1.5 15
T
A
(SURFACE MOUNT)
T
C
-9 V
t
r
, t
f
≤
10 ns
DUTY CYCLE = 1%
51
-4 V
D
1
R
B
V
CC
+ 30 V
R
C
SCOPE
1 10
0.5
5
0
0
25
50
75
100
T, TEMPERATURE (°C)
125
150
R
B
and R
C
VARIED TO OBTAIN DESIRED CURRENT LEVELS
D
1
MUST BE FAST RECOVERY TYPE, e.g.:
1N5825 USED ABOVE I
B
≈
100 mA
MSD6100 USED BELOW I
B
≈
100 mA
REVERSE ALL POLARITIES FOR PNP.
Figure 1. Power Derating
Figure 2. Switching Time Test Circuit
2
1
0.7
0.5
t, TIME (
μ
s)
0.3
t
r
@ V
CC
= 30 V
I
C
/I
B
= 10
T
J
= 25°C
3
2
t
s
′
1
t, TIME (
μ
s)
0.7
0.5
0.3
0.2
0.1
0.07
0.05
0.03
0.03
0.05 0.07 0.1
0.2
0.3
0.5 0.7
t
f
@ V
CC
= 10 V
t
f
@ V
CC
= 30 V
I
B1
= I
B2
I
C
/I
B
= 10
t
s
′
= t
s
- 1/8 t
f
T
J
= 25°C
t
r
@ V
CC
= 10 V
0.1
0.07
0.05
0.03
0.02
0.03
t
d
@ V
BE(off)
= 2 V
0.05 0.07 0.1
0.3
0.5 0.7
1
1
2
3
I
C
, COLLECTOR CURRENT (AMPS)
I
C
, COLLECTOR CURRENT (AMPS)
Figure 3. Turn−On Time
100
Duty Cycle = 0.5
0.2
10
R
qJA
(°C/W)
0.1
0.05
0.02
1
0.01
Figure 4. Turn−Off Time
0.1
Single Pulse
0.01
0.000001
0.00001
0.0001
0.001
0.01
0.1
1
10
100
1000
t, PULSE TIME (sec)
Figure 5. Thermal Response
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MJD31 (NPN), MJD32 (PNP)
TYPICAL CHARACTERISTICS − MJD31, MJD31C (NPN)
1000
150°C
h
FE
, DC CURRENT GAIN
V
CE
= 4 V
h
FE
, DC CURRENT GAIN
1000
150°C
V
CE
= 2 V
100
25°C
−55°C
100
25°C
−55°C
10
10
1
0.01
1
0.1
1
10
0.01
0.1
1
10
I
C
, COLLECTOR CURRENT (A)
I
C
, COLLECTOR CURRENT (A)
Figure 6. DC Current Gain at V
CE
= 4 V
0.6
V
CE(sat)
, COLL−EMITT SATURATION
VOLTAGE (V)
0.5
0.4
150°C
0.3
0.2
0.1
0
0.001
25°C
−55°C
0.01
0.1
1
10
V
BE(sat)
, BASE−EMITT SATURATION VOLTAGE (V)
1.2
1.1
1.0
0.9
0.8
0.7
0.6
0.5
0.4
0.3
0.2
0.001
Figure 7. DC Current Gain at V
CE
= 2 V
I
C
/I
B
= 10
I
C
/I
B
= 10
−55°C
25°C
150°C
I
C
, COLLECTOR CURRENT (A)
0.01
0.1
1
I
C
, COLLECTOR CURRENT (A)
10
Figure 8. Collector−Emitter Saturation Voltage
V
BE(on)
, BASE−EMITTER ON VOLTAGE (V)
1.2
1.1
1.0
0.9
0.8
0.7
0.6
0.5
0.4
0.3
0.2
0.001
0.01
0.1
1
10
150°C
−55°C
25°C
V
CE
, COLLECTOR−EMITTER VOLTAGE (V)
2
Figure 9. Base−Emitter Saturation Voltage
V
CE
= 5 V
T
A
=
25°C
1.6
1.2
100 mA
500 mA
I
C
= 3 A
1A
0.8
0.4
10 mA
0
0.01
0.1
1
10
100
1000
I
C
, COLLECTOR CURRENT (A)
I
B
, BASE CURRENT (mA)
Figure 10. Base-Emitter “On” Voltage
Figure 11. Collector Saturation Region
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MJD31 (NPN), MJD32 (PNP)
TYPICAL CHARACTERISTICS − MJD31, MJD31C (NPN)
1000
f
T
, CURRENT−GAIN − BANDWIDTH
PRODUCT (MHz)
T
A
= 25°C
C, CAPACITANCE (pF)
C
ib
100
C
ob
10
100
V
CE
= 5 V
T
A
= 25°C
10
1
0.1
1
10
V
R
, REVERSE VOLTAGE (V)
100
1
0.001
0.01
0.1
1
I
C
, COLLECTOR CURRENT (A)
10
Figure 12. Capacitance
10
I
C
, COLLECTOR CURRENT (A)
Figure 13. Current−Gain−Bandwidth Product
1
0.1
0.01
1
10
V
CE
, COLLECTOR−EMITTER VOLTAGE (V)
100
Figure 14. Safe Operating Area
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