PD - 96045A
Applications
l
High Frequency Synchronous Buck
Converters for Computer Processor Power
l
High Frequency Isolated DC-DC
Converters with Synchronous Rectification
for Telecom and Industrial Use
l
Lead-Free
Benefits
l
Very Low R
DS(on)
at 4.5V V
GS
l
Ultra-Low Gate Impedance
l
Fully Characterized Avalanche Voltage
and Current
IRFR3707ZCPbF
IRFU3707ZCPbF
HEXFET
®
Power MOSFET
V
DSS
R
DS(on)
max
30V
9.5m
:
Qg
9.6nC
D-Pak
IRFR3707ZCPbF
I-Pak
IRFU3707ZCPbF
Absolute Maximum Ratings
Parameter
V
DS
V
GS
I
D
@ T
C
= 25°C
I
D
@ T
C
= 100°C
I
DM
P
D
@T
C
= 25°C
P
D
@T
C
= 100°C
T
J
T
STG
Drain-to-Source Voltage
Gate-to-Source Voltage
Continuous Drain Current, V
GS
@ 10V
Continuous Drain Current, V
GS
@ 10V
Pulsed Drain Current
Max.
30
± 20
Units
V
A
f
39
f
56
220
50
25
0.33
Maximum Power Dissipation
Maximum Power Dissipation
Linear Derating Factor
Operating Junction and
Storage Temperature Range
Soldering Temperature, for 10 seconds
W
W/°C
°C
-55 to + 175
300 (1.6mm from case)
Thermal Resistance
Parameter
R
θJC
R
θJA
R
θJA
Junction-to-Case
Junction-to-Ambient (PCB Mount)
Junction-to-Ambient
Typ.
Max.
3.0
50
110
Units
°C/W
gÃ
–––
–––
–––
Notes
through
are on page 11
www.irf.com
1
05/14/08
IRFR/U3707ZCPbF
Static @ T
J
= 25°C (unless otherwise specified)
Parameter
BV
DSS
∆ΒV
DSS
/∆T
J
R
DS(on)
V
GS(th)
∆V
GS(th)
/∆T
J
I
DSS
I
GSS
gfs
Q
g
Q
gs1
Q
gs2
Q
gd
Q
godr
Q
sw
Q
oss
t
d(on)
t
r
t
d(off)
t
f
C
iss
C
oss
C
rss
Drain-to-Source Breakdown Voltage
Breakdown Voltage Temp. Coefficient
Static Drain-to-Source On-Resistance
Gate Threshold Voltage
Gate Threshold Voltage Coefficient
Drain-to-Source Leakage Current
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
Forward Transconductance
Total Gate Charge
Pre-Vth Gate-to-Source Charge
Post-Vth Gate-to-Source Charge
Gate-to-Drain Charge
Gate Charge Overdrive
Switch Charge (Q
gs2
+ Q
gd
)
Output Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Parameter
Single Pulse Avalanche Energy
Avalanche Current
Repetitive Avalanche Energy
Min. Typ. Max. Units
30
–––
–––
–––
1.35
–––
–––
–––
–––
–––
71
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
0.023
7.5
10
1.80
-5.0
–––
–––
–––
–––
–––
9.6
2.6
0.90
3.5
2.6
4.4
5.8
8.0
11
12
3.3
1150
260
120
–––
–––
9.5
12.5
2.25
–––
1.0
150
100
-100
–––
14
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
Typ.
–––
–––
–––
pF
nC
nC
V
Conditions
V
GS
= 0V, I
D
= 250µA
V/°C Reference to 25°C, I
D
= 1mA
mΩ V
GS
= 10V, I
D
= 15A
V
V
GS
= 4.5V, I
D
V
DS
= V
GS
, I
D
= 25µA
e
= 12A
e
mV/°C
µA V
DS
= 24V, V
GS
= 0V
nA
S
V
DS
= 24V, V
GS
= 0V, T
J
= 125°C
V
GS
= 20V
V
GS
= -20V
V
DS
= 15V, I
D
= 12A
V
DS
= 15V
V
GS
= 4.5V
I
D
= 12A
See Fig. 16
V
DS
= 15V, V
GS
= 0V
V
DD
= 16V, V
GS
= 4.5V
ns
I
D
= 12A
Clamped Inductive Load
V
GS
= 0V
V
DS
= 15V
ƒ = 1.0MHz
Max.
42
12
5.0
e
Avalanche Characteristics
E
AS
I
AR
E
AR
Ã
d
–––
–––
–––
–––
–––
–––
–––
–––
25
17
Units
mJ
A
mJ
Diode Characteristics
Parameter
I
S
I
SM
V
SD
t
rr
Q
rr
t
on
Continuous Source Current
(Body Diode)
Pulsed Source Current
(Body Diode)
Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge
Forward Turn-On Time
Min. Typ. Max. Units
56
f
Conditions
MOSFET symbol
D
A
220
1.0
38
26
V
ns
nC
Ã
showing the
integral reverse
G
S
p-n junction diode.
T
J
= 25°C, I
S
= 12A, V
GS
= 0V
T
J
= 25°C, I
F
= 12A, V
DD
= 15V
di/dt = 100A/µs
e
e
Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)
2
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IRFR/U3707ZCPbF
10000
TOP
1000
VGS
10V
6.0V
4.5V
4.0V
3.3V
2.8V
2.5V
2.2V
TOP
VGS
10V
6.0V
4.5V
4.0V
3.3V
2.8V
2.5V
2.2V
1000
ID, Drain-to-Source Current (A)
ID, Drain-to-Source Current (A)
100
BOTTOM
100
BOTTOM
10
1
0.1
10
2.2V
1
2.2V
0.01
20µs PULSE WIDTH
Tj = 25°C
0.1
20µs PULSE WIDTH
Tj = 175°C
10
0.1
1
10
0.001
0.1
1
VDS, Drain-to-Source Voltage (V)
VDS, Drain-to-Source Voltage (V)
Fig 1.
Typical Output Characteristics
Fig 2.
Typical Output Characteristics
1000
2.0
100
T J = 175°C
RDS(on) , Drain-to-Source On Resistance
(Normalized)
ID, Drain-to-Source Current
(Α)
ID = 30A
VGS = 10V
1.5
10
1
1.0
0.1
TJ = 25°C
VDS = 10V
20µs PULSE WIDTH
0.01
0
2
4
6
8
0.5
-60 -40 -20 0
20 40 60 80 100 120 140 160 180
VGS, Gate-to-Source Voltage (V)
T J , Junction Temperature (°C)
Fig 3.
Typical Transfer Characteristics
Fig 4.
Normalized On-Resistance
vs. Temperature
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3
IRFR/U3707ZCPbF
10000
VGS = 0V,
f = 1 MHZ
C iss = C gs + C gd, C ds SHORTED
C rss = C gd
C oss = C ds + C gd
6.0
ID= 12A
VGS, Gate-to-Source Voltage (V)
5.0
4.0
3.0
2.0
1.0
0.0
VDS= 24V
VDS= 15V
C, Capacitance(pF)
1000
Ciss
Coss
Crss
100
1
10
100
0
2
4
6
8
10
12
VDS, Drain-to-Source Voltage (V)
QG Total Gate Charge (nC)
Fig 5.
Typical Capacitance vs.
Drain-to-Source Voltage
Fig 6.
Typical Gate Charge vs.
Gate-to-Source Voltage
1000.00
1000
OPERATION IN THIS AREA
LIMITED BY R DS(on)
100.00
T J = 175°C
10.00
ID, Drain-to-Source Current (A)
ISD, Reverse Drain Current (A)
100
10
100µsec
1msec
1.00
TJ = 25°C
1
Tc = 25°C
Tj = 175°C
Single Pulse
0.1
0
1
10
10msec
0.10
VGS = 0V
0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0 2.2
VSD, Source-to-Drain Voltage (V)
100
1000
VDS, Drain-to-Source Voltage (V)
Fig 7.
Typical Source-Drain Diode
Forward Voltage
Fig 8.
Maximum Safe Operating Area
4
www.irf.com
IRFR/U3707ZCPbF
60
50
ID, Drain Current (A)
2.5
Limited By Package
VGS(th) Gate threshold Voltage (V)
40
30
20
10
0
25
50
75
100
125
150
175
T C , Case Temperature (°C)
2.0
ID = 250µA
1.5
1.0
-75 -50 -25
0
25
50
75 100 125 150 175 200
T J , Temperature ( °C )
Fig 9.
Maximum Drain Current vs.
Case Temperature
Fig 10.
Threshold Voltage vs. Temperature
10
Thermal Response ( Z thJC )
1
D = 0.50
0.20
0.10
0.05
R
1
R
1
τ
J
τ
1
τ
2
R
2
R
2
R
3
R
3
τ
3
τ
C
τ
τ
3
0.1
0.02
0.01
SINGLE PULSE
( THERMAL RESPONSE )
τ
J
Ri (°C/W)
τi
(sec)
0.823
0.000128
1.698
0.481
0.000845
0.016503
τ
1
τ
2
0.01
Ci=
τi/Ri
Ci=
τi/Ri
Notes:
1. Duty Factor D = t1/t2
2. Peak Tj = P dm x Zthjc + Tc
0.0001
0.001
0.01
0.1
0.001
1E-006
1E-005
t1 , Rectangular Pulse Duration (sec)
Fig 11.
Maximum Effective Transient Thermal Impedance, Junction-to-Case
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