MJE5850, MJE5851,
MJE5852
Switch-mode Series PNP
Silicon Power Transistors
The MJE5850, MJE5851 and the MJE5852 transistors are designed
for high−voltage, high−speed, power switching in inductive circuits
where fall time is critical. They are particularly suited for line operated
switch−mode applications.
Features
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•
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•
•
•
•
•
•
Switching Regulators
Inverters
Solenoid and Relay Drivers
Motor Controls
Deflection Circuits
Fast Turn−Off Times
Operating Temperature Range −65 to + 150_C
100_C Performance Specified for:
♦
Reversed Biased SOA with Inductive Loads
♦
Switching Times with Inductive Loads
♦
Saturation Voltages
♦
Leakage Currents
•
Complementary to the MJE13007 Series
•
These Devices are Pb−Free and are RoHS Compliant*
MAXIMUM RATINGS
Rating
Collector−Emitter Voltage
MJE5850
MJE5851
MJE5852
Collector−Emitter Voltage
MJE5850
MJE5851
MJE5852
Emitter Base Voltage
Collector Current − Continuous (Note 1)
Collector Current − Peak (Note 1)
Base Current − Continuous (Note 1)
Base Current − Peak (Note 1)
Total Power Dissipation
@ T
C
= 25_C
Derate above 25_C
Operating and Storage Junction
Temperature Range
Symbol
V
CEO(sus)
300
350
400
V
CEV
350
400
450
V
EB
I
C
I
CM
I
B
I
BM
P
D
80
0.640
T
J
, T
stg
– 65 to 150
W
W/_C
_C
6.0
8.0
16
4.0
8.0
Vdc
Adc
Adc
Adc
Adc
Vdc
Value
Unit
Vdc
8 AMPERE
PCP SILICON
POWER TRANSISTORS
300−350−400 VOLTS
80 WATTS
COLLECTOR
2, 4
1
BASE
3
EMITTER
4
TO−220
CASE 221A−09
STYLE 1
1
2
3
MARKING DIAGRAM
MJE585xG
AY WW
MJE585x =
G
A
Y
WW
=
=
=
=
Stresses exceeding those listed in the Maximum Ratings table may damage the
device. If any of these limits are exceeded, device functionality should not be
assumed, damage may occur and reliability may be affected.
1. Pulse Test: Pulse Width = 5 ms, Duty Cycle
≤
10%.
*For additional information on our Pb−Free strategy and soldering details, please
download the ON Semiconductor Soldering and Mounting Techniques
Reference Manual, SOLDERRM/D.
Device Code
x = 0, 1, or 2
Pb−Free Package
Assembly Location
Year
Work Week
ORDERING INFORMATION
See detailed ordering and shipping information in the package
dimensions section on page 7 of this data sheet.
©
Semiconductor Components Industries, LLC, 2015
1
January, 2015 − Rev. 7
Publication Order Number:
MJE5850/D
MJE5850, MJE5851, MJE5852
THERMAL CHARACTERISTICS
Rating
Thermal Resistance, Junction−to−Case
Maximum Lead Temperature for Soldering Purposes: 1/8″ from Case for 5 Seconds
Symbol
R
qJC
T
L
Max
1.25
275
Unit
_C/W
_C
ELECTRICAL CHARACTERISTICS
(T
C
= 25_C unless otherwise noted)
Characteristic
OFF CHARACTERISTICS
Collector−Emitter Sustaining Voltage
(I
C
= 10 mA, I
B
= 0)
MJE5850
MJE5851
MJE5852
Collector Cutoff Current
(V
CEV
= Rated Value, V
BE(off)
= 1.5 Vdc)
(V
CEV
= Rated Value, V
BE(off)
= 1.5 Vdc, T
C
= 100_C)
Collector Cutoff Current
(V
CE
= Rated V
CEV
, R
BE
= 50
W,
T
C
= 100_C)
Emitter Cutoff Current
(V
EB
= 6.0 Vdc, I
C
= 0)
SECOND BREAKDOWN
Second Breakdown Collector Current with base forward biased
Clamped Inductive SOA with base reverse biased
ON CHARACTERISTICS
(Note 2)
DC Current Gain
(I
C
= 2.0 Adc, V
CE
= 5 Vdc)
(I
C
= 5.0 Adc, V
CE
= 5 Vdc)
Collector−Emitter Saturation Voltage
(I
C
= 4.0 Adc, I
B
= 1.0 Adc)
(I
C
= 8.0 Adc, I
B
= 3.0 Adc)
(I
C
= 4.0 Adc, I
B
= 1.0 Adc, T
C
= 100_C)
Base−Emitter Saturation Voltage
(I
C
= 4.0 Adc, I
B
= 1.0 Adc)
(I
C
= 4.0 Adc, I
B
= 1.0 Adc, T
C
= 100_C)
DYNAMIC CHARACTERISTICS
Output Capacitance
(V
CB
= 10 Vdc, I
E
= 0, f
test
= 1.0 kHz)
SWITCHING CHARACTERISTICS
Resistive Load (Table 1)
Delay Time
Rise Time
Storage Time
Fall Time
(V
CC
= 250 Vdc, I
C
= 4.0 A, I
B1
= 1.0 A,
t
p
= 50
ms,
Duty Cycle
≤
2%)
(V
CC
= 250 Vdc, I
C
= 4.0 A, I
B1
= 1.0 A,
V
BE(off)
= 5 Vdc, t
p
= 50
ms,
Duty Cycle
≤
2%)
t
d
t
r
t
s
t
f
−
−
−
−
0.025
0.100
0.60
0.11
0.1
0.5
2.0
0.5
ms
ms
ms
ms
ms
ms
ms
ms
ms
ms
C
ob
−
270
−
pF
h
FE
15
5
V
CE(sat)
−
−
−
V
BE(sat)
−
−
−
−
1.5
1.5
−
−
−
2.0
5.0
2.5
Vdc
−
−
−
−
Vdc
−
I
S/b
RBSOA
See Figure 12
See Figure 13
V
CEO(sus)
300
350
400
I
CEV
−
−
I
CER
−
I
EBO
−
−
1.0
−
3.0
mAdc
−
−
0.5
2.5
mAdc
−
−
−
−
−
−
mAdc
Vdc
Symbol
Min
Typ
Max
Unit
Inductive Load, Clamped (Table 1)
Storage Time
Crossover Time
Fall Time
Storage Time
Crossover Time
Fall Time
(I
CM
= 4 A, V
CEM
= 250 V, I
B1
= 1.0 A,
V
BE(off)
= 5 Vdc, T
C
= 25_C)
(I
CM
= 4 A, V
CEM
= 250 V, I
B1
= 1.0 A,
V
BE(off)
= 5 Vdc, T
C
= 100_C)
t
sv
t
c
t
fi
t
sv
t
c
t
fi
−
−
−
−
−
−
0.8
0.4
0.1
0.5
0.125
0.1
3.0
1.5
−
−
−
−
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.
2. Pulse Test: PW = 300
ms.
Duty Cycle
≤
2%
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MJE5850, MJE5851, MJE5852
TYPICAL ELECTRICAL CHARACTERISTICS
200
100
hFE , DC CURRENT GAIN
70
50
30
20
V
CE
= 5 V
10
7.0
5.0
3.0
2.0
0.1
T
J
= 150°C
T
J
= 25°C
VCE , COLLECTOR-EMITTER VOLTAGE (VOLTS)
2.0
1.6
I
C
= 0.25 A
1.2
1.0 A
2.5 A
5.0 A
0.8
T
J
= 25°C
0.4
0.2
0.5 0.7 1.0
2.0 3.0
0.3
I
C
, COLLECTOR CURRENT (AMPS)
5.0 7.0
10
0
0.01
0.02
0.05
2.0
0.1
0.2
0.5 1.0
I
B
, BASE CURRENT (AMPS)
5.0
10
Figure 1. DC Current Gain
Figure 2. Collector Saturation Region
VCE , COLLECTOR-EMITTER VOLTAGE (VOLTS)
2.0
2.0
1.6
I
C
/I
B
= 4
1.2
V, VOLTAGE (VOLTS)
1.6
I
C
/I
B
= 4
1.2
0.8
T
J
= 150°C
0.8
T
J
= 25°C
0.4
0
0.1
T
J
= 25°C
0.2 0.3
0.5 0.7 1.0
2.0 3.0
5.0 7.0
10
0.4
0
0.1
T
J
= 150°C
0.2 0.3
0.5 0.7 1.0
2.0 3.0
5.0 7.0
10
I
C
, COLLECTOR CURRENT (AMPS)
I
C
, COLLECTOR CURRENT (AMPS)
Figure 3. Collector−Emitter Saturation Voltage
Figure 4. Base−Emitter Voltage
10
5
IC, COLLECTOR CURRENT (nA)
3000
2000
T
J
= 25°C
T
J
= 150°C
C, CAPACITANCE (pF)
1000
500
C
ob
200
100
50
- 0.4
0
- 0.1
- 0.2
- 0.3
V
BE
, BASE-EMITTER VOLTAGE (VOLTS)
- 0.5
30
0.1 0.2
0.5 1.0
5.0 10 20 50 100 200 500 1000
V
R
, REVERSE VOLTAGE (VOLTS)
C
ib
10
4
10
3
100°C
10
2
REVERSE
25°C
10
0
+ 0.2
+ 0.1
FORWARD
V
CE
= 200 V
10
1
Figure 5. Collector Cutoff Region
Figure 6. Capacitance
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MJE5850, MJE5851, MJE5852
Table 1. TEST CONDITIONS FOR DYNAMIC PERFORMANCE
V
CEO(sus)
RBSOA AND INDUCTIVE SWITCHING
RESISTIVE SWITCHING
+V
50
mF
+ -
0.0025
mF
0.2
mF
500
W
1/2 W
500
W
1/2 W
1N4934
I
B1
-10 V
20
1
0.1
mF
MJE15029
TURN−ON TIME
1
2
INPUT
CONDITIONS
0
0.1
mF
2
INPUT
+V
0
50
W
2W
500
W
1/2 W
0.2
mF
0.0033
mF
1
500
W
1/2 W
1
W
2
MJE15028W
0.1
mF
-
+
2
PW Varied to Attain
I
C
= 100 mA
I
B1
adjusted to
obtain the forced
h
FE
desired
TURN−OFF TIME
Use inductive switching
driver as the input to
the resistive test circuit.
−V adjusted to obtain desired I
B1
+ V adjusted to obtain desired V
BE(off)
CIRCUIT
VALUES
L
coil
= 180
mH
R
coil
= 0.05
W
V
CC
= 20 V
50
mF
-V
V
CC
= 250 V
R
L
= 62
W
Pulse Width = 10
ms
RESISTIVE TEST CIRCUIT
t
1
Adjusted to
Obtain I
C
L
coil
= 80 mH, V
CC
= 10 V
R
coil
= 0.7
W
V
clamp
= 250 V
R
B
adjusted to attain desired I
B1
INDUCTIVE TEST CIRCUIT
OUTPUT WAVEFORMS
I
C
TEST CIRCUITS
TUT
1
IN
PUT
SEE ABOVE FOR
DETAILED CONDITIONS
1N4937
OR
EQUIVALENT
V
clamp
RS =
0.1
W
R
coil
L
coil
V
CC
V
CE
I
CM
t
1
t
f
t
f
Clamped
t
t
1
≈
t
2
≈
L
coil
(I
CM
)
V
CC
L
coil
(I
CM
)
V
Clamp
1
2
TUT
R
L
V
CC
V
CEM
TIM
E
t
2
V
clamp
t
Test Equipment
Scope — Tektronix
475 or Equivalent
1.0
t
c
100°C
t c , CROSSOVER TIME (
μs)
0.8
t
sv
100°C
I
C
= 4 A
I
C
/I
B
= 4
T
J
= 25°C
t
sv
25°C
3.0
2.7
t sv, VOLTAGE STORAGE TIME (μs)
2.4
2.1
I
B
V
CE
10%
90% I
B1
V
CEM
t
sr
t
rv
t
c
t
fi
10% 2%
I
CM
I
CM
t
ti
0.6
1.8
1.5
I
C
90%
I
CM
I
CM
TIME
V
CEM
0.4
1.2
0.9
0.2
t
c
25°C
0.6
0.3
V
clamp
0
0
1
2
3
4
5
6
7
8
V
BE
, BASE-EMITTER VOLTAGE (VOLTS)
0
Figure 7. Inductive Switching Measurements
Figure 8. Inductive Switching Times
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MJE5850, MJE5851, MJE5852
SWITCHING TIMES NOTE
In resistive switching circuits, rise, fall, and storage times
have been defined and apply to both current and voltage
waveforms since they are in phase. However, for inductive
loads which are common to SWITCHMODE power
supplies and hammer drivers, current and voltage
waveforms are not in phase. Therefore, separate
measurements must be made on each waveform to
determine the total switching time. For this reason, the
following new terms have been defined.
t
sv
= Voltage Storage Time, 90% I
B1
to 10% V
CEM
t
rv
= Voltage Rise Time, 10 −90% V
CEM
t
fi
= Current Fall Time, 90 −10% I
CM
t
ti
= Current Tail, 10 −2% I
CM
t
c
= Crossover Time,10% V
CEM
to 10% I
CM
An enlarged portion of the inductive switching waveform
is shown in Figure 7 to aid on the visual identity of these
terms.
1.0
0.7
0.5
0.3
0.2
t, TIME (
μ
s)
0.1
0.07
0.05
0.03
0.02
0.01
0.1
t
d
t
f
0.1
0.2
0.3
0.5 0.7 1.0
2.0
3.0
5.0 7.0
10
0.1
0.3
0.5 0.7 1.0
2.0
4.0
7.0 10
I
C
, COLLECTOR CURRENT (AMPS)
I
C
, COLLECTOR CURRENT (AMPS)
t
r
t, TIME (
μ
s)
For the designer, there is minimal switching loss during
storage time and the predominant switching power losses
occur during the crossover interval and can be obtained
using the standard equation from AN−222A:
P
SWT
= 1/2 V
CC
I
C
(t
c
)f
In general, t
rv
+ t
fi
]
t
c
. However, at lower test currents
this relationship may not be valid.
As is common with most switching transistors, resistive
switching is specified at 25°C and has become a benchmark
for designers. However, for designers of high frequency
converter circuits, the user oriented specifications which
make this a “SWITCHMODE” transistor are the inductive
switching speeds (t
c
and t
sv
) which are guaranteed at 100_C.
10
V
CC
= 250 V
I
C
/I
B
= 4
T
J
= 25°C
0.7
t
s
0.4
0.3
0.2
V
CC
= 250 V
I
C
/I
B
= 4
V
BE(off)
= 5 V
T
J
= 25°C
Figure 9. Turn−On Switching Times
Figure 10. Turn−Off Switching Time
r(t), TRANSIENT THERMAL RESISTANCE
(NORMALIZED)
1
0.7
0.5
0.3
0.2
0.1
0.07
0.05
0.03
0.02
D = 0.5
0.2
0.1
0.05
0.02
0.01
SINGLE PULSE
0.02
0.05
0.1
0.2
0.5
1
Z
qJC(t)
= r(t) R
qJC
R
qJC
= 1.25°C/W MAX
D CURVES APPLY FOR POWER
PULSE TRAIN SHOWN
READ TIME AT t
1
T
J(pk)
- T
C
= P
(pk)
Z
qJC(t)
P
(pk)
t
1
t
2
DUTY CYCLE, D = t
1
/t
2
100
200
500
1k
0.01
0.01
2
5
t, TIME (ms)
10
20
50
Figure 11. Typical Thermal Response [Z
qJC
(t)]
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