DISCRETE SEMICONDUCTORS
DATA SHEET
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M3D087
BDL32
PNP BISS-transistor
Product specification
Supersedes data of 1998 Aug 03
1999 Apr 29
Philips Semiconductors
Product specification
PNP BISS-transistor
BDL32
FEATURES
•
High current (max. 5 A)
•
Low voltage (max. 10 V)
•
Low collector-emitter saturation voltage ensures
reduced power consumption.
APPLICATIONS
•
Battery powered units where high current and low power
consumption are important.
DESCRIPTION
PNP BISS (Breakthrough In Small Signal) transistor in a
SOT223 plastic package. NPN complement: BDL31.
PINNING
PIN
1
2
3
4
base
not connected
emitter
collector
DESCRIPTION
handbook, halfpage
4
4
1
3
1
Top view
2
3
MAM373
Fig.1 Simplified outline (SOT223) and symbol.
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
SYMBOL
V
CBO
V
CEO
V
EBO
I
C
I
CM
I
BM
P
tot
T
stg
T
j
T
amb
Note
1. Device mounted on a printed-circuit board, single-sided copper, tinplated, mounting pad for collector 1 cm
2
.
For other mounting conditions, see
“Thermal considerations for SOT223 in the General Part of associated
Handbook”.
PARAMETER
collector-base voltage
collector-emitter voltage
emitter-base voltage
collector current (DC)
peak collector current
peak base current
total power dissipation
storage temperature
junction temperature
operating ambient temperature
T
amb
≤
25
°C;
note 1
CONDITIONS
open emitter
open base
open collector
−
−
−
−
−
−
−
−65
−
−65
MIN.
MAX.
−15
−10
−5
−5
−10
−1
1.35
+150
150
+150
V
V
V
A
A
A
W
°C
°C
°C
UNIT
1999 Apr 29
2
Philips Semiconductors
Product specification
PNP BISS-transistor
BDL32
THERMAL CHARACTERISTICS
SYMBOL
R
th j-a
R
th j-s
Note
1. Device mounted on a printed-circuit board, single-sided copper, tinplated, mounting pad for collector 1 cm
2
.
For other mounting conditions, see
“Thermal considerations for SOT223 in the General Part of associated
Handbook”.
CHARACTERISTICS
T
amb
= 25
°C
unless otherwise specified.
SYMBOL
I
CBO
I
EBO
h
FE
PARAMETER
collector cut-off current
emitter cut-off current
DC current gain
CONDITIONS
I
E
= 0; V
CB
=
−10
V
I
E
= 0; V
CB
=
−10
V; T
j
= 150
°C
I
C
= 0; V
EB
=
−5
V
V
CE
=
−2
V; note 1
I
C
=
−0.5
A
I
C
=
−1
A
I
C
=
−3
A
I
C
=
−5
A
V
CE
=
−1
V; I
C
=
−2
A; note 1
V
CEsat
collector-emitter saturation voltage note 1
I
C
=
−1
A; I
B
=
−20
mA
I
C
=
−2
A; I
B
=
−200
mA
I
C
=
−3
A; I
B
=
−60
mA
I
C
=
−5
A; I
B
=
−100
mA
C
c
f
T
Note
1. Pulse test: t
p
≤
300
µs; δ ≤
0.02.
collector capacitance
transition frequency
I
E
= i
e
= 0; V
CB
=
−5
V; f = 1 MHz
I
C
=
−500
mA; V
CE
=
−10
V;
f = 100 MHz
−
−
−
−
−
100
−250
−400
−600
−1
150
−
mV
mV
mV
V
pF
MHz
200
180
120
50
120
−
−
−
−
−
−
−
−
MIN.
MAX.
−50
−50
−50
UNIT
nA
µA
nA
PARAMETER
thermal resistance from junction to ambient
thermal resistance from junction to soldering point
CONDITIONS
note 1
VALUE
92
10
UNIT
K/W
K/W
1999 Apr 29
3
Philips Semiconductors
Product specification
PNP BISS-transistor
BDL32
PACKAGE OUTLINE
Plastic surface mounted package; collector pad for good heat transfer; 4 leads
SOT223
D
B
E
A
X
c
y
H
E
b
1
v
M
A
4
Q
A
A
1
1
e
1
e
2
b
p
3
w
M
B
detail X
L
p
0
2
scale
4 mm
DIMENSIONS (mm are the original dimensions)
UNIT
mm
A
1.8
1.5
A
1
0.10
0.01
b
p
0.80
0.60
b
1
3.1
2.9
c
0.32
0.22
D
6.7
6.3
E
3.7
3.3
e
4.6
e
1
2.3
H
E
7.3
6.7
L
p
1.1
0.7
Q
0.95
0.85
v
0.2
w
0.1
y
0.1
OUTLINE
VERSION
SOT223
REFERENCES
IEC
JEDEC
EIAJ
EUROPEAN
PROJECTION
ISSUE DATE
96-11-11
97-02-28
1999 Apr 29
4
Philips Semiconductors
Product specification
PNP BISS-transistor
BDL32
DEFINITIONS
Data sheet status
Objective specification
Preliminary specification
Product specification
Limiting values
Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one or
more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation
of the device at these or at any other conditions above those given in the Characteristics sections of the specification
is not implied. Exposure to limiting values for extended periods may affect device reliability.
Application information
Where application information is given, it is advisory and does not form part of the specification.
LIFE SUPPORT APPLICATIONS
These products are not designed for use in life support appliances, devices, or systems where malfunction of these
products can reasonably be expected to result in personal injury. Philips customers using or selling these products for
use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such
improper use or sale.
This data sheet contains target or goal specifications for product development.
This data sheet contains preliminary data; supplementary data may be published later.
This data sheet contains final product specifications.
1999 Apr 29
5
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