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MMBZ5257ELT3G

产品描述Zener Voltage Regulators 225 mW SOT−23 Surface Mount
产品类别分立半导体    二极管   
文件大小68KB,共6页
制造商ON Semiconductor(安森美)
官网地址http://www.onsemi.cn
标准
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MMBZ5257ELT3G概述

Zener Voltage Regulators 225 mW SOT−23 Surface Mount

MMBZ5257ELT3G规格参数

参数名称属性值
是否无铅不含铅
是否Rohs认证符合
厂商名称ON Semiconductor(安森美)
零件包装代码SOT-23
包装说明R-PDSO-G3
针数3
制造商包装代码CASE 318-08
Reach Compliance Codecompli
ECCN代码EAR99
配置SINGLE
二极管元件材料SILICON
二极管类型ZENER DIODE
最大动态阻抗58 Ω
JEDEC-95代码TO-236
JESD-30 代码R-PDSO-G3
JESD-609代码e3
湿度敏感等级1
元件数量1
端子数量3
最高工作温度150 °C
最低工作温度-65 °C
封装主体材料PLASTIC/EPOXY
封装形状RECTANGULAR
封装形式SMALL OUTLINE
峰值回流温度(摄氏度)260
极性UNIDIRECTIONAL
最大功率耗散0.225 W
认证状态Not Qualified
标称参考电压33 V
表面贴装YES
技术ZENER
端子面层Tin (Sn)
端子形式GULL WING
端子位置DUAL
处于峰值回流温度下的最长时间NOT SPECIFIED
最大电压容差5%
工作测试电流3.8 mA

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MMBZ5221ELT1 Series
Preferred Device
Zener Voltage Regulators
225 mW SOT−23 Surface Mount
This series of Zener diodes is offered in the convenient, surface
mount plastic SOT−23 package. These devices are designed to provide
voltage regulation with minimum space requirement. They are well
suited for applications such as cellular phones, hand held portables,
and high density PC boards.
Features
http://onsemi.com
3
Cathode
1
Anode
225 mW Rating on FR−4 or FR−5 Board
Zener Voltage Range − 2.4 V to 91 V
Package Designed for Optimal Automated Board Assembly
Small Package Size for High Density Applications
ESD Rating of Class 3 (>16 kV) per Human Body Model
Peak Power − 225 W (8 x 20
ms)
Pb−Free Packages are Available
MARKING
DIAGRAM
3
1
2
SOT−23
CASE 318
STYLE 8
1
Bxx M
G
G
Mechanical Characteristics:
CASE:
Void-free, transfer-molded, thermosetting plastic case
FINISH:
Corrosion resistant finish, easily solderable
MAXIMUM CASE TEMPERATURE FOR SOLDERING PURPOSES:
260°C for 10 Seconds
POLARITY:
Cathode indicated by polarity band
FLAMMABILITY RATING:
UL 94 V−0
MAXIMUM RATINGS
Rating
Peak Power Dissipation @ 20
ms
(Note 1)
@ T
L
25°C
Total Power Dissipation on FR−5 Board,
(Note 2) @ T
A
= 25°C
Derated above 25°C
Thermal Resistance, Junction−to−Ambient
Total Power Dissipation on Alumina
Substrate, (Note 3) @ T
A
= 25°C
Derated above 25°C
Thermal Resistance, Junction−to−Ambient
Junction and Storage Temperature Range
Symbol
P
pk
P
D
225
1.8
R
qJA
P
D
300
2.4
R
qJA
T
J
, T
stg
417
−65 to
+150
mW
mW/°C
°C/W
°C
556
mW
mW/°C
°C/W
Max
225
Unit
W
Bxx
xx
M
G
= Device Code
= (Refer to page 2)
= Date Code*
= Pb−Free Package
(Note: Microdot may be in either location)
*Date Code orientation may vary depending
upon manufacturing location.
ORDERING INFORMATION
Device
MMBZ52xxELT1
MMBZ52xxELT1G
MMBZ52xxELT3
MMBZ52xxELT3G
Package
SOT−23
Shipping
3000/Tape & Reel
SOT−23 3000/Tape & Reel
(Pb−Free)
SOT−23
10000/Tape & Reel
SOT−23 10000/Tape & Reel
(Pb−Free)
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specifications
Brochure, BRD8011/D.
Maximum ratings are those values beyond which device damage can occur.
Maximum ratings applied to the device are individual stress limit values (not
normal operating conditions) and are not valid simultaneously. If these limits are
exceeded, device functional operation is not implied, damage may occur and
reliability may be affected.
1. Nonrepetitive current pulse per Figure 9.
2. FR−5 = 1.0 X 0.75 X 0.62 in.
3. Alumina = 0.4 X 0.3 X 0.024 in., 99.5% alumina.
DEVICE MARKING INFORMATION
See specific marking information in the device marking
column of the Electrical Characteristics table on page 2 of
this data sheet.
Devices listed in
bold, italic
are ON Semiconductor
Preferred
devices.
Preferred
devices are recommended
choices for future use and best overall value.
©
Semiconductor Components Industries, LLC, 2005
1
August, 2005 − Rev. 6
Publication Order Number:
MMBZ5221ELT1/D
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