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MT47H128M8BT-5E: 产品描述DDR DRAM, 128MX8, 0.6ns, CMOS, PBGA92, 11 X 19 MM, LEAD FREE, FBGA-92; 产品类别存储存储; 文件大小9MB，共131页; 制造商Micron Technology; 官网地址http://www.mdtic.com.tw/; 标准

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MT47H128M8BT-5E概述

DDR DRAM, 128MX8, 0.6ns, CMOS, PBGA92, 11 X 19 MM, LEAD FREE, FBGA-92

MT47H128M8BT-5E规格参数

参数名称	属性值
是否Rohs认证	符合
厂商名称	Micron Technology
零件包装代码	BGA
包装说明	TFBGA, BGA92,9X21,32
针数	92
Reach Compliance Code	unknown
ECCN代码	EAR99
Is Samacsys	N
访问模式	MULTI BANK PAGE BURST
最长访问时间	0.6 ns
其他特性	AUTO/SELF REFRESH
最大时钟频率 (fCLK)	200 MHz
I/O 类型	COMMON
交错的突发长度	4,8
JESD-30 代码	R-PBGA-B92
JESD-609代码	e1
长度	19 mm
内存密度	1073741824 bit
内存集成电路类型	DDR DRAM
内存宽度	8
功能数量	1
端口数量	1
端子数量	92
字数	134217728 words
字数代码	128000000
工作模式	SYNCHRONOUS
最高工作温度	85 °C
最低工作温度
组织	128MX8
输出特性	3-STATE
封装主体材料	PLASTIC/EPOXY
封装代码	TFBGA
封装等效代码	BGA92,9X21,32
封装形状	RECTANGULAR
封装形式	GRID ARRAY, THIN PROFILE, FINE PITCH
峰值回流温度（摄氏度）	260
电源	1.8 V
认证状态	Not Qualified
刷新周期	8192
座面最大高度	1.2 mm
自我刷新	YES
连续突发长度	4,8
最大供电电压 (Vsup)	1.9 V
最小供电电压 (Vsup)	1.7 V
标称供电电压 (Vsup)	1.8 V
表面贴装	YES
技术	CMOS
温度等级	OTHER
端子面层	Tin/Silver/Copper (Sn/Ag/Cu)
端子形式	BALL
端子节距	0.8 mm
端子位置	BOTTOM
处于峰值回流温度下的最长时间	30
宽度	11 mm
Base Number Matches	1

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1Gb: x4, x8, x16 DDR2 SDRAM

Features

DDR2 SDRAM

MT47H256M4 – 32 Meg x 4 x 8 banks

MT47H128M8 – 16 Meg x 8 x 8 banks

MT47H64M16 – 8 Meg x 16 x 8 banks

Features

•

= +1.8V ±0.1V, V

DDQ

= +1.8V ±0.1V

JEDEC-standard 1.8V I/O (SSTL_18-compatible)

Differential data strobe (DQS, DQS#) option

4n-bit prefetch architecture

Duplicate output strobe (RDQS) option for x8

DLL to align DQ and DQS transitions with CK

8 internal banks for concurrent operation

Programmable CAS latency (CL)

Posted CAS additive latency (AL)

WRITE latency = READ latency - 1

Selectable burst lengths (BL): 4 or 8

Adjustable data-output drive strength

64ms, 8192-cycle refresh

On-die termination (ODT)

Industrial temperature (IT) option

RoHS-compliant

Supports JEDEC clock jitter specification

Options

•

Configuration

–

256 Meg x 4 (32 Meg x 4 x 8 banks)

–

128 Meg x 8 (16 Meg x 8 x 8 banks)

–

64 Meg x 16 (8 Meg x 16 x 8 banks)

•

FBGA package (Pb-free) – x16

–

84-ball FBGA (8mm x 12.5mm)

Rev. G, H

•

FBGA package (Pb-free) – x4, x8

–

60-ball FBGA (8mm x 11.5mm)

Rev. G

•

FBGA package (Pb-free) – x4, x8

–

60-ball FBGA (8mm x 10mm) Rev. H

•

FBGA package (lead solder) – x16

–

84-ball FBGA (8mm x 12.5mm)

Rev. G, H

•

FBGA package (lead solder) – x4, x8

–

60-ball FBGA (8mm x 11.5mm)

Rev. G

•

FBGA package (lead solder) – x4, x8

–

60-ball FBGA (8mm x 10mm) Rev. H

•

Timing – cycle time

–

1.875ns @ CL = 7 (DDR2-1066)

–

2.5ns @ CL = 5 (DDR2-800)

–

2.5ns @ CL = 6 (DDR2-800)

–

3.0ns @ CL = 4 (DDR2-667)

–

3.0ns @ CL = 5 (DDR2-667)

–

3.75ns @ CL = 4 (DDR2-533)

•

Self refresh

–

Standard

–

Low-power

•

Operating temperature

–

Commercial (0°C

≤

85°C)

–

Industrial (–40°C

≤

95°C;

–40°C

≤

85°C)

–

Automotive (–40°C

≤

, T

≤

105ºC)

•

Revision

Note:

Marking

256M4

128M8

64M16

-187E

-25E

-25

-3E

-3

-37E

None

:G/:H

1. Not all options listed can be combined to

define an offered product. Use the Part

Catalog Search on

www.micron.com

for

product offerings and availability.

PDF: 09005aef821ae8bf

1GbDDR2.pdf – Rev. T 02/10 EN

Products and specifications discussed herein are subject to change by Micron without notice.

Micron Technology, Inc. reserves the right to change products or specifications without notice.

1Gb: x4, x8, x16 DDR2 SDRAM

State Diagram .................................................................................................................................................. 9

Functional Description ................................................................................................................................... 10

Industrial Temperature .............................................................................................................................. 10

Automotive Temperature ........................................................................................................................... 11

General Notes ............................................................................................................................................ 11

Functional Block Diagrams ............................................................................................................................. 12

Ball Assignments and Descriptions ................................................................................................................. 15

Packaging ...................................................................................................................................................... 19

Package Dimensions .................................................................................................................................. 19

FBGA Package Capacitance ......................................................................................................................... 22

Electrical Specifications – Absolute Ratings ..................................................................................................... 23

Temperature and Thermal Impedance ........................................................................................................ 23

Electrical Specifications – I

Parameters ........................................................................................................ 26

Specifications and Conditions ............................................................................................................... 26

DD7

Conditions .......................................................................................................................................... 27

AC Timing Operating Specifications ................................................................................................................ 31

AC and DC Operating Conditions .................................................................................................................... 41

ODT DC Electrical Characteristics ................................................................................................................... 42

Input Electrical Characteristics and Operating Conditions ............................................................................... 43

Output Electrical Characteristics and Operating Conditions ............................................................................. 46

Output Driver Characteristics ......................................................................................................................... 48

Power and Ground Clamp Characteristics ....................................................................................................... 52

AC Overshoot/Undershoot Specification ......................................................................................................... 53

Input Slew Rate Derating ................................................................................................................................ 55

Commands .................................................................................................................................................... 68

Truth Tables ............................................................................................................................................... 68

DESELECT ................................................................................................................................................. 72

NO OPERATION (NOP) .............................................................................................................................. 73

LOAD MODE (LM) ..................................................................................................................................... 73

ACTIVATE .................................................................................................................................................. 73

READ ......................................................................................................................................................... 73

WRITE ....................................................................................................................................................... 73

PRECHARGE .............................................................................................................................................. 74

REFRESH ................................................................................................................................................... 74

SELF REFRESH ........................................................................................................................................... 74

Mode Register (MR) ........................................................................................................................................ 74

Burst Length .............................................................................................................................................. 75

Burst Type ................................................................................................................................................. 76

Operating Mode ......................................................................................................................................... 76

DLL RESET ................................................................................................................................................. 76

Write Recovery ........................................................................................................................................... 77

Power-Down Mode .................................................................................................................................... 77

CAS Latency (CL) ........................................................................................................................................ 78

Extended Mode Register (EMR) ....................................................................................................................... 79

DLL Enable/Disable ................................................................................................................................... 80

Output Drive Strength ................................................................................................................................ 80

DQS# Enable/Disable ................................................................................................................................. 80

RDQS Enable/Disable ................................................................................................................................. 80

Output Enable/Disable ............................................................................................................................... 80

On-Die Termination (ODT) ........................................................................................................................ 81

Contents

PDF: 09005aef821ae8bf

1GbDDR2.pdf – Rev. T 02/10 EN

Micron Technology, Inc. reserves the right to change products or specifications without notice.

1Gb: x4, x8, x16 DDR2 SDRAM

Off-Chip Driver (OCD) Impedance Calibration ............................................................................................ 81

Posted CAS Additive Latency (AL) ............................................................................................................... 81

Extended Mode Register 2 (EMR2) .................................................................................................................. 83

Extended Mode Register 3 (EMR3) .................................................................................................................. 84

Initialization .................................................................................................................................................. 85

ACTIVATE ...................................................................................................................................................... 88

READ ............................................................................................................................................................. 90

READ with Precharge ................................................................................................................................. 94

READ with Auto Precharge .......................................................................................................................... 96

WRITE .......................................................................................................................................................... 101

PRECHARGE ................................................................................................................................................. 111

REFRESH ...................................................................................................................................................... 112

SELF REFRESH .............................................................................................................................................. 113

Power-Down Mode ....................................................................................................................................... 115

Precharge Power-Down Clock Frequency Change .......................................................................................... 122

Reset ............................................................................................................................................................. 123

CKE Low Anytime ...................................................................................................................................... 123

ODT Timing .................................................................................................................................................. 125

MRS Command to ODT Update Delay ........................................................................................................ 127

PDF: 09005aef821ae8bf

1GbDDR2.pdf – Rev. T 02/10 EN

Micron Technology, Inc. reserves the right to change products or specifications without notice.

MT47H128M8BT-5E相似产品对比

	MT47H128M8BT-5E	MT47H64M16BT-37E	MT47H256M4BT-5E	MT47H256M4BT-37E	MT47H64M16HR-3 IT:H	MT47H128M8BT-37E	MT47H64M16HR-25E	MT47H64M16HR-3	MT47H64M16BT-5E
描述	DDR DRAM, 128MX8, 0.6ns, CMOS, PBGA92, 11 X 19 MM, LEAD FREE, FBGA-92	DDR DRAM, 64MX16, 0.5ns, CMOS, PBGA92, 11 X 19 MM, LEAD FREE, FBGA-92	DDR DRAM, 256MX4, 0.6ns, CMOS, PBGA92, 11 X 19 MM, LEAD FREE, FBGA-92	DDR DRAM, 256MX4, 0.5ns, CMOS, PBGA92, 11 X 19 MM, LEAD FREE, FBGA-92	IC 64M X 16 DDR DRAM, 0.45 ns, PBGA84, 8 X 12.50 MM, ROHS COMPLIANT, FBGA-84, Dynamic RAM	DDR DRAM, 128MX8, 0.5ns, CMOS, PBGA92, 11 X 19 MM, LEAD FREE, FBGA-92	DDR DRAM,	DDR DRAM,	DDR DRAM, 64MX16, 0.6ns, CMOS, PBGA92, 11 X 19 MM, LEAD FREE, FBGA-92
是否Rohs认证	符合	符合	符合	符合	符合	符合	符合	符合	符合
Reach Compliance Code	unknown	unknown	unknown	unknown	unknown	unknown	unknown	compliant	unknow
内存集成电路类型	DDR DRAM	DDR DRAM	DDR DRAM	DDR DRAM	DDR DRAM	DDR DRAM	DDR DRAM	DDR DRAM	DDR DRAM
厂商名称	Micron Technology	Micron Technology	Micron Technology	-	Micron Technology	Micron Technology	Micron Technology	Micron Technology	Micron Technology
零件包装代码	BGA	BGA	BGA	BGA	-	BGA	-	-	BGA
包装说明	TFBGA, BGA92,9X21,32	TFBGA, BGA92,9X21,32	TFBGA, BGA92,9X21,32	TFBGA, BGA92,9X21,32	TFBGA, BGA84,9X15,32	TFBGA, BGA92,9X21,32	-	-	TFBGA, BGA92,9X21,32
针数	92	92	92	92	-	92	-	-	92
ECCN代码	EAR99	EAR99	EAR99	EAR99	3A991	EAR99	-	-	EAR99
访问模式	MULTI BANK PAGE BURST	MULTI BANK PAGE BURST	MULTI BANK PAGE BURST	MULTI BANK PAGE BURST	MULTI BANK PAGE BURST	MULTI BANK PAGE BURST	-	-	MULTI BANK PAGE BURST
最长访问时间	0.6 ns	0.5 ns	0.6 ns	0.5 ns	0.45 ns	0.5 ns	-	-	0.6 ns
其他特性	AUTO/SELF REFRESH	AUTO/SELF REFRESH	AUTO/SELF REFRESH	AUTO/SELF REFRESH	AUTO/SELF REFRESH	AUTO/SELF REFRESH	-	-	AUTO/SELF REFRESH
最大时钟频率 (fCLK)	200 MHz	267 MHz	200 MHz	267 MHz	333 MHz	267 MHz	-	-	200 MHz
I/O 类型	COMMON	COMMON	COMMON	COMMON	COMMON	COMMON	-	-	COMMON
交错的突发长度	4,8	4,8	4,8	4,8	4,8	4,8	-	-	4,8
JESD-30 代码	R-PBGA-B92	R-PBGA-B92	R-PBGA-B92	R-PBGA-B92	R-PBGA-B84	R-PBGA-B92	-	-	R-PBGA-B92
JESD-609代码	e1	e1	e1	e1	e1	e1	-	-	e1
长度	19 mm	19 mm	19 mm	19 mm	12.5 mm	19 mm	-	-	19 mm
内存密度	1073741824 bit	1073741824 bit	1073741824 bit	1073741824 bit	1073741824 bit	1073741824 bit	-	-	1073741824 bi
内存宽度	8	16	4	4	16	8	-	-	16
功能数量	1	1	1	1	1	1	-	-	1
端口数量	1	1	1	1	1	1	-	-	1
端子数量	92	92	92	92	84	92	-	-	92
字数	134217728 words	67108864 words	268435456 words	268435456 words	67108864 words	134217728 words	-	-	67108864 words
字数代码	128000000	64000000	256000000	256000000	64000000	128000000	-	-	64000000
工作模式	SYNCHRONOUS	SYNCHRONOUS	SYNCHRONOUS	SYNCHRONOUS	SYNCHRONOUS	SYNCHRONOUS	-	-	SYNCHRONOUS
最高工作温度	85 °C	85 °C	85 °C	85 °C	85 °C	85 °C	-	-	85 °C
组织	128MX8	64MX16	256MX4	256MX4	64MX16	128MX8	-	-	64MX16
输出特性	3-STATE	3-STATE	3-STATE	3-STATE	3-STATE	3-STATE	-	-	3-STATE
封装主体材料	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY	-	-	PLASTIC/EPOXY
封装代码	TFBGA	TFBGA	TFBGA	TFBGA	TFBGA	TFBGA	-	-	TFBGA
封装等效代码	BGA92,9X21,32	BGA92,9X21,32	BGA92,9X21,32	BGA92,9X21,32	BGA84,9X15,32	BGA92,9X21,32	-	-	BGA92,9X21,32
封装形状	RECTANGULAR	RECTANGULAR	RECTANGULAR	RECTANGULAR	RECTANGULAR	RECTANGULAR	-	-	RECTANGULAR
封装形式	GRID ARRAY, THIN PROFILE, FINE PITCH	GRID ARRAY, THIN PROFILE, FINE PITCH	GRID ARRAY, THIN PROFILE, FINE PITCH	GRID ARRAY, THIN PROFILE, FINE PITCH	GRID ARRAY, THIN PROFILE, FINE PITCH	GRID ARRAY, THIN PROFILE, FINE PITCH	-	-	GRID ARRAY, THIN PROFILE, FINE PITCH
峰值回流温度（摄氏度）	260	260	260	260	260	260	-	NOT SPECIFIED	260
电源	1.8 V	1.8 V	1.8 V	1.8 V	1.8 V	1.8 V	-	-	1.8 V
认证状态	Not Qualified	Not Qualified	Not Qualified	Not Qualified	Not Qualified	Not Qualified	-	-	Not Qualified
刷新周期	8192	8192	8192	8192	8192	8192	-	-	8192
座面最大高度	1.2 mm	1.2 mm	1.2 mm	1.2 mm	1.2 mm	1.2 mm	-	-	1.2 mm
自我刷新	YES	YES	YES	YES	YES	YES	-	-	YES
连续突发长度	4,8	4,8	4,8	4,8	4,8	4,8	-	-	4,8
最大供电电压 (Vsup)	1.9 V	1.9 V	1.9 V	1.9 V	1.9 V	1.9 V	-	-	1.9 V
最小供电电压 (Vsup)	1.7 V	1.7 V	1.7 V	1.7 V	1.7 V	1.7 V	-	-	1.7 V
标称供电电压 (Vsup)	1.8 V	1.8 V	1.8 V	1.8 V	1.8 V	1.8 V	-	-	1.8 V
表面贴装	YES	YES	YES	YES	YES	YES	-	-	YES
技术	CMOS	CMOS	CMOS	CMOS	CMOS	CMOS	-	-	CMOS
温度等级	OTHER	OTHER	OTHER	OTHER	INDUSTRIAL	OTHER	-	-	OTHER
端子面层	Tin/Silver/Copper (Sn/Ag/Cu)	Tin/Silver/Copper (Sn/Ag/Cu)	Tin/Silver/Copper (Sn/Ag/Cu)	Tin/Silver/Copper (Sn/Ag/Cu)	Tin/Silver/Copper (Sn96.5Ag3.0Cu0.5)	Tin/Silver/Copper (Sn/Ag/Cu)	-	-	Tin/Silver/Copper (Sn/Ag/Cu)
端子形式	BALL	BALL	BALL	BALL	BALL	BALL	-	-	BALL
端子节距	0.8 mm	0.8 mm	0.8 mm	0.8 mm	0.8 mm	0.8 mm	-	-	0.8 mm
端子位置	BOTTOM	BOTTOM	BOTTOM	BOTTOM	BOTTOM	BOTTOM	-	-	BOTTOM
处于峰值回流温度下的最长时间	30	30	30	30	30	30	-	NOT SPECIFIED	30
宽度	11 mm	11 mm	11 mm	11 mm	8 mm	11 mm	-	-	11 mm

MT47H128M8BT-5E

MT47H128M8BT-5E概述

MT47H128M8BT-5E规格参数

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MT47H128M8BT-5E相似产品对比

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