Freescale Semiconductor
Technical Data
Document Number: MRF5S19130H
Rev. 2, 5/2006
RF Power Field Effect Transistors
N - Channel Enhancement - Mode Lateral MOSFETs
Designed for PCN and PCS base station applications at frequencies from
1900 to 2000 MHz. Suitable for TDMA, CDMA and multicarrier amplifier
applications.
•
Typical 2 - Carrier N - CDMA Performance for V
DD
= 28 Volts, I
DQ
=
1200 mA, P
out
= 26 Watts Avg., Full Frequency Band, IS - 95 CDMA (Pilot,
Sync, Paging, Traffic Codes 8 Through 13) Channel Bandwidth =
1.2288 MHz. PAR = 9.8 dB @ 0.01% Probability on CCDF.
Power Gain — 13 dB
Drain Efficiency — 25%
IM3 @ 2.5 MHz Offset — - 37 dBc in 1.2288 MHz Bandwidth
ACPR @ 885 kHz Offset — - 51 dB in 30 kHz Bandwidth
•
Capable of Handling 10:1 VSWR, @ 28 Vdc, 1960 MHz, 110 Watts CW
Output Power
Features
•
Characterized with Series Equivalent Large - Signal Impedance Parameters
•
Internally Matched for Ease of Use
•
Qualified Up to a Maximum of 32 V Operation
•
Integrated ESD Protection
•
Lower Thermal Resistance Package
•
Low Gold Plating Thickness on Leads, 40
μ
″
Nominal.
•
RoHS Compliant
•
In Tape and Reel. R3 Suffix = 250 Units per 56 mm, 13 inch Reel.
MRF5S19130HR3
MRF5S19130HSR3
1930- 1990 MHz, 26 W AVG., 28 V
2 x N - CDMA
LATERAL N - CHANNEL
RF POWER MOSFETs
CASE 465B - 03, STYLE 1
NI - 880
MRF5S19130HR3
CASE 465C - 02, STYLE 1
NI - 880S
MRF5S19130HSR3
Table 1. Maximum Ratings
Rating
Drain- Source Voltage
Gate- Source Voltage
Total Device Dissipation @ T
C
= 25°C
Derate above 25°C
Storage Temperature Range
Case Operating Temperature
Operating Junction Temperature
CW Operation @ T
C
= 25°C
Derate above 25°C
Symbol
V
DSS
V
GS
P
D
T
stg
T
C
T
J
CW
Value
- 0.5, +65
- 0.5, +15
438
2.50
- 65 to +150
150
200
160
1
Unit
Vdc
Vdc
W
W/°C
°C
°C
°C
W
W/°C
Table 2. Thermal Characteristics
Characteristic
Thermal Resistance, Junction to Case
Case Temperature 80°C, 115 W CW
Case Temperature 78°C, 26 W CW
Symbol
R
θJC
Value
(1,2)
0.40
0.46
Unit
°C/W
1. MTTF calculator available at http://www.freescale.com/rf. Select Tools/Software/Application Software/Calculators to access
the MTTF calculators by product.
2. Refer to AN1955,
Thermal Measurement Methodology of RF Power Amplifiers.
Go to http://www.freescale.com/rf.
Select Documentation/Application Notes - AN1955.
©
Freescale Semiconductor, Inc., 2006. All rights reserved.
MRF5S19130HR3 MRF5S19130HSR3
1
RF Device Data
Freescale Semiconductor
Table 3. ESD Protection Characteristics
Test Conditions
Human Body Model
Machine Model
Charge Device Model
Class
2 (Minimum)
M4 (Minimum)
C7 (Minimum)
Table 4. Electrical Characteristics
(T
C
= 25°C unless otherwise noted)
Characteristic
Off Characteristics
Zero Gate Voltage Drain Leakage Current
(V
DS
= 65 Vdc, V
GS
= 0 Vdc)
Zero Gate Voltage Drain Leakage Current
(V
DS
= 28 Vdc, V
GS
= 0 Vdc)
Gate- Source Leakage Current
(V
GS
= 5 Vdc, V
DS
= 0 Vdc)
On Characteristics
Gate Threshold Voltage
(V
DS
= 10 Vdc, I
D
= 200
μAdc)
Gate Quiescent Voltage
(V
DS
= 28 Vdc, I
D
= 1200 mAdc)
Drain- Source On - Voltage
(V
GS
= 10 Vdc, I
D
= 3 Adc)
Forward Transconductance
(V
DS
= 10 Vdc, I
D
= 3 Adc)
Dynamic Characteristics
Reverse Transfer Capacitance
(1)
(V
DS
= 28 Vdc
±
30 mV(rms)ac @ 1 MHz, V
GS
= 0 Vdc)
C
rss
—
2.7
—
pF
V
GS(th)
V
GS(Q)
V
DS(on)
g
fs
2.5
—
—
—
2.8
3.8
0.26
7.5
3.5
—
—
—
Vdc
Vdc
Vdc
S
I
DSS
I
DSS
I
GSS
—
—
—
—
—
—
10
1
1
μAdc
μAdc
μAdc
Symbol
Min
Typ
Max
Unit
Functional Tests
(In Freescale Test Fixture, 50 ohm system) V
DD
= 28 Vdc, I
DQ
= 1200 mA, P
out
= 26 W Avg., f1 = 1930 MHz,
f2 = 1932.5 MHz and f1 = 1987.5 MHz, f2 = 1990 MHz, 2 - Carrier N - CDMA, 1.2288 MHz Channel Bandwidth Carriers. ACPR measured in
30 kHz Channel Bandwidth @
±885
kHz Offset. IM3 measured in 1.2288 MHz Channel Bandwidth @
±2.5
MHz Offset. PAR = 9.8 dB @
0.01% Probability on CCDF.
Power Gain
Drain Efficiency
Intermodulation Distortion
Adjacent Channel Power Ratio
Input Return Loss
1. Part internally matched both on input and output.
G
ps
η
D
IM3
ACPR
IRL
12
23
—
—
—
13
25
- 37
- 51
- 15
—
—
- 35
- 48
-9
dB
%
dBc
dBc
dB
MRF5S19130HR3 MRF5S19130HSR3
2
RF Device Data
Freescale Semiconductor
B1
R1
V
BIAS
+
C10
R2
+
C9
C6
C7
C8
C15
Z13
RF
INPUT
Z10
Z1
C1
C2
C3
C4
C5
B2
+
C11
C12
C14
R4
C13
C26
C27
C28
C29
C30
+
C31
+
C32
+
C33
+
C34
Z11
Z2
Z3
Z4 Z5 Z6 Z7
Z8 Z9
Z14
DUT
Z12
Z15 Z16 Z17 Z18 Z19 Z20 Z21
C25
RF
Z22 Z23 Z24 OUTPUT
R3
+
C16
C17
C18
C19
C20
+
C21
+
C22
+
C23
V
SUPPLY
+
C24
Z1
Z2
Z3
Z4
Z5
Z6
Z7
Z8
Z9
Z10, Z11
Z12
0.200″ x 0.085″ Microstrip
0.170″ x 0.085″ Microstrip
0.480″ x 0.085″ Microstrip
0.926″ x 0.085″ Microstrip
0.590″ x 0.085″ Microstrip
0.519″ x 0.955″ x 0.160″ Taper
0.022″ x 0.955″ Microstrip
0.046″ x 0.955″ Microstrip
0.080″ x 0.955″ Microstrip
1.280″ x 0.046″ Microstrip
0.053″ x 1.080″ Microstrip
Z13, Z14
Z15
Z16
Z17
Z18
Z19
Z20
Z21
Z22
Z23
PCB
1.125″ x 0.068″ Microstrip
0.071″ x 1.080″ Microstrip
0.060″ x 1.080″ Microstrip
0.290″ x 1.080″ Microstrip
1.075″ x 0.825″ x 0.125″ Taper
0.635″ x 0.120″ Microstrip
0.185″ x 0.096″ Microstrip
0.414″ x 0.084″ Microstrip
0.040″ x 0.084″ Microstrip
0.199″ x 0.057″ Microstrip
Arlon GX0300 - 55- 22, 0.03″,
ε
r
= 2.55
Figure 1. MRF5S19130HR3(SR3) Test Circuit Schematic
Table 5. MRF5S19130HR3(SR3) Test Circuit Component Designations and Values
Part
B1, B2
C1
C2, C4
C3
C5
C8, C13
C9, C11
C10
C6, C14, C17, C18, C19, C28, C29, C30
C7, C12, C16, C27
C15, C26
C20, C21, C22, C23, C31, C32, C33, C34
C24
C25
R1
R2
R3, R4
Description
Short RF Bead
0.8 pF Chip Capacitor
0.6 – 4.5 pF Gigatrim Variable Capacitors
2.2 pF Chip Capacitor
1.7 pF Chip Capacitor
9.1 pF Chip Capacitors
1
μF,
25 V Tantalum Capacitors
47
μF,
50 V Electrolytic Capacitor
0.1
μF
Chip Capacitors
1000 pF Chip Capacitors
8.2 pF Chip Capacitors
22
μF,
35 V Tantalum Capacitors
470
μF,
63 V Electrolytic Capacitor
6.2 pF Chip Capacitor
1 kW Chip Resistor
560 kW Chip Resistor
12
W
Chip Resistors
Part Number
95F786
100B0R8BP 500X
44F3358
100B2R2BP 500X
100B1R7BP 500X
100B9R1CP 500X
92F1845
51F2913
CDR33BX104AKWS
100B102JP 500X
100B8R2CP 500X
92F1853
95F4579
100B6R2CP 500X
D5534M07B1K00R
CR1206 564JT
RM73B2B120JT
Manufacturer
Newark
ATC
Newark
ATC
ATC
ATC
Newark
Newark
Kemet
ATC
ATC
Newark
Newark
ATC
Newark
Newark
Garrett Electtonics
MRF5S19130HR3 MRF5S19130HSR3
RF Device Data
Freescale Semiconductor
3
C18
C10
R1
V
GG
C16
R2
C9
C7
B1
R3
C8
MRF5S19130
Rev 5
C15
C19
C20 C21
C24
V
DD
C17
C6
C22 C23
C1
C2
C3
C4
C5
C11
C14
C12
CUT OUT AREA
C25
C28
C27
C33 C34
B2
R4
C13
C26
C29 C30
C31 C32
Freescale has begun the transition of marking Printed Circuit Boards (PCBs) with the Freescale Semiconductor
signature/logo. PCBs may have either Motorola or Freescale markings during the transition period. These changes will have
no impact on form, fit or function of the current product.
Figure 2. MRF5S19130HR3(SR3) Test Circuit Component Layout
MRF5S19130HR3 MRF5S19130HSR3
4
RF Device Data
Freescale Semiconductor
TYPICAL CHARACTERISTICS
η
D
, DRAIN
EFFICIENCY (%)
IM3 (dBc), ACPR (dBc)
−5
−10
−15
−20
−25
−30
IRL, INPUT RETURN LOSS (dB)
1500 mA
1200 mA
10
P
out
, OUTPUT POWER (WATTS) PEP
15
14
G ps , POWER GAIN (dB)
13
12
11
10
9
8
7
6
ACPR
IM3
IRL
G
ps
η
D
V
DD
= 28 Vdc, P
out
= 26 W (Avg.), I
DQ
= 1200 mA
2−Carrier N−CDMA, 2.5 MHz Carrier Spacing
1.2288 MHz Channel Bandwidth
PAR = 9.8 dB @ 0.01% Probability (CCDF)
40
35
30
25
20
−10
−20
−30
−40
−50
5
−60
1900 1910 1920 1930 1940 1950 1960 1970 1980 1990 2000
f, FREQUENCY (MHz)
Figure 3. 2 - Carrier N - CDMA Broadband Performance
@ P
out
= 26 Watts Avg.
16
IMD, THIRD ORDER
INTERMODULATION DISTORTION (dBc)
15
G ps , POWER GAIN (dB)
14
1500 mA
13
12
11
600 mA
10
1
10
P
out
, OUTPUT POWER (WATTS) PEP
100
200
1200 mA
900 mA
V
DD
= 28 Vdc, f1 = 1958.75 MHz, f2 = 1961.25 MHz
Two−Tone Measurement, 2.5 MHz Tone Spacing
I
DQ
= 1800 mA
−25
−30
−35
I
DQ
= 1800 mA
−40
600 mA
−45
−50
−55
900 mA
−60
1
100
200
V
DD
= 28 Vdc, f1 = 1958.75 MHz, f2 = 1961.25 MHz
Two−Tone Measurement, 2.5 MHz Tone Spacing
Figure 4. Two - Tone Power Gain versus
Output Power
Figure 5. Third Order Intermodulation
Distortion versus Output Power
IMD, INTERMODULATION DISTORTION (dBc)
−20
−25
−30
−35
−40
−45
−50
−55
−60
0.1
7th Order
V
DD
= 28 Vdc, P
out
= 130 W (PEP), I
DQ
= 1200 mA
Two−Tone Measurements
(f1 + f2)/2 = Center Frequency of 1960 MHz
1
TWO−TONE SPACING (MHz)
10
5th Order
3rd Order
Pout , OUTPUT POWER (dBm)
60
59
58
57
56
55
54
53
52
51
50
49
48
35
36
37
38
P3dB = 53.11 dBm (205.57 W)
P1dB = 52.54 dBm (179.61 W)
Actual
V
DD
= 28 Vdc, I
DQ
= 1200 mA
Pulsed CW, 8
μsec
(on), 1 msec (off)
f = 1960 MHz
39
40
41
42
43
44
45
Ideal
P
in
, INPUT POWER (dBm)
Figure 6. Intermodulation Distortion Products
versus Tone Spacing
Figure 7. Pulse CW Output Power versus
Input Power
MRF5S19130HR3 MRF5S19130HSR3
RF Device Data
Freescale Semiconductor
5
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