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MT46HC16M32LGCM-6IT:B

产品描述DDR DRAM, 16MX32, 6ns, CMOS, PBGA90, 10 X 13 MM, GREEN, PLASTIC, VFBGA-90
产品类别存储    存储   
文件大小3MB,共98页
制造商Micron Technology
官网地址http://www.mdtic.com.tw/
标准
下载文档 详细参数 全文预览

MT46HC16M32LGCM-6IT:B概述

DDR DRAM, 16MX32, 6ns, CMOS, PBGA90, 10 X 13 MM, GREEN, PLASTIC, VFBGA-90

MT46HC16M32LGCM-6IT:B规格参数

参数名称属性值
是否无铅不含铅
是否Rohs认证符合
厂商名称Micron Technology
零件包装代码BGA
包装说明VFBGA,
针数90
Reach Compliance Codecompliant
ECCN代码EAR99
Is SamacsysN
访问模式FOUR BANK PAGE BURST
最长访问时间6 ns
其他特性AUTO/SELF REFRESH
JESD-30 代码R-PBGA-B90
JESD-609代码e1
长度13 mm
内存密度536870912 bit
内存集成电路类型DDR DRAM
内存宽度32
功能数量1
端口数量1
端子数量90
字数16777216 words
字数代码16000000
工作模式SYNCHRONOUS
最高工作温度85 °C
最低工作温度-40 °C
组织16MX32
封装主体材料PLASTIC/EPOXY
封装代码VFBGA
封装形状RECTANGULAR
封装形式GRID ARRAY, VERY THIN PROFILE, FINE PITCH
峰值回流温度(摄氏度)260
认证状态Not Qualified
座面最大高度1 mm
自我刷新YES
最大供电电压 (Vsup)1.95 V
最小供电电压 (Vsup)1.7 V
标称供电电压 (Vsup)1.8 V
表面贴装YES
技术CMOS
温度等级INDUSTRIAL
端子面层Tin/Silver/Copper (Sn/Ag/Cu)
端子形式BALL
端子节距0.8 mm
端子位置BOTTOM
处于峰值回流温度下的最长时间30
宽度10 mm
Base Number Matches1

文档预览

下载PDF文档
512Mb: x16, x32 Mobile LPDDR SDRAM
Features
Mobile Low-Power DDR SDRAM
MT46H32M16LF – 8 Meg x 16 x 4 Banks
MT46H16M32LF – 4 Meg x 32 x 4 Banks
Features
V
DD
/V
DDQ
= 1.70–1.95V
1.2V I/O option V
DDQ
= 1.14–1.30V
Bidirectional data strobe per byte of data (DQS)
Internal, pipelined double data rate (DDR)architec-
ture; two data accesses per clock cycle
Differential clock inputs (CK and CK#)
Commands entered on each positive CK edge
DQS edge-aligned with data for READs;center-
aligned with data for WRITEs
4 internal banks for concurrent operation
Data masks (DM) for masking write data—one mask
per byte
Programmable burst lengths (BL): 2, 4, 8, or 16
Concurrent auto precharge option is supported
Auto refresh and self refresh modes
1.8V LVCMOS-compatible inputs
On-chip temp sensor to control self refresh rate
Partial-array self refresh (PASR)
Deep power-down (DPD)
Status read register (SRR)
Selectable output drive strength (DS)
Clock stop capability
64ms refresh
Table 1: Key Timing Parameters (CL = 3)
Speed Grade
-5
-54
-6
-75
Clock Rate (MHz)
200
185
166
133
Access Time
5.0ns
5.0ns
5.0ns
6.0ns
Options
V
DD
/V
DDQ
1.8V/1.8V
1.8V/1.2V
1
Configuration
32 Meg x 16 (8 Meg x 16 x 4 banks)
16 Meg x 32 (4 Meg x 32 x 4 banks)
Row-size option
JEDEC-standard option
Reduced page-size option
1
Plastic green package
60-ball VFBGA (8mm x 9mm)
2
90-ball VFBGA (10mm x 13mm)
3
90-ball VFBGA (9mm x 13mm)
3
Timing – cycle time
5ns @ CL = 3
5.4ns @ CL = 3
6ns @ CL = 3
7.5ns @ CL = 3
Power
Standard I
DD2
/I
DD6
Low-power I
DD2
/I
DD61
Operating temperature range
Commercial (0˚ to +70˚C)
Industrial (–40˚C to +85˚C)
Design revision
Notes:
Marking
H
HC
32M16
16M32
LF
LG
BF
CM
CX
-5
-54
-6
-75
None
L
None
IT
:B
1. Contact factory for availability.
2. Only available for x16 configuration.
3. Only available for x32 configuration.
PDF: 09005aef82d5d305
512mb_ddr_mobile_sdram_t47m.pdf – Rev. I 12/09 EN
1
Products and specifications discussed herein are subject to change by Micron without notice.
Micron Technology, Inc. reserves the right to change products or specifications without notice.
©
2004 Micron Technology, Inc. All rights reserved.

 
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