SHINDENGEN
VX-2 Series Power MOSFET
N-Channel Enhancement type
2SK2182
(F3F50VX2)
500V 3A
FEATURES
●
Input capacitance (Ciss) is small.
OUTLINE DIMENSIONS
Case
E-pack
Case
:
:
FTO-220
(Unit : mm)
Especially, input capacitance
at 0 biass is small.
●
The static Rds(on) is small.
●
The switching time is fast.
APPLICATION
●
Switching power supply of AC 100V input
●
High voltage power supply
●
Inverter
RATINGS
●Absolute
Maximum Ratings
（Tc
= 25℃）
Item
Symbol
Conditions
Storage Temperature
T
stg
T
ch
Channel Temperature
V
DSS
Drain-Source Voltage
V
GSS
Gate-Source Voltage
I
D
Continuous Drain Current（DC）
I
DP
Continuous Drain Current（Peak)
Continuous Source Current（DC）
I
S
Total Power Dissipation
P
T
I
AS
Single Pulse Avalanche Current
T
ch
= 25℃
V
dis
Terminals to case, AC
1
minute
Dielectric Strength
TOR
（
Recommended torque : 0.3 N½m
）
Mounting Torque
Ratings
-55½150
150
500
±30
3
9
3
25
3
2
0.5
Unit
℃
V
A
W
A
kV
N½m
Copyright & Copy;2000 Shindengen Electric Mfg.Co.Ltd
VX-2 Series Power MOSFET
●Electrical
Characteristics Tc = 25℃
Item
Symbol
V
(BR)DSS
Drain-Source Breakdown Voltage
I
DSS
Zero Gate Voltage Drain Current
I
GSS
Gate-Source Leakage Current
Forward Tran½conductance
g
fs
Static Drain-Source On-½tate Resistance
R
DS(ON)
Gate Threshold Voltage
V
TH
V
SD
Source-Drain Diode Forwade Voltage
θjc
The½mal Resistance
Q
g
Total Gate Charge
C
iss
Input Capacitance
Reverse Transfer Capacitance
C
rss
Output Capacitance
C
oss
Turn-On Time
t
on
t
off
Turn-Off Time
Conditions
I
D
=
1mA,
V
GS
= 0V
V
DS
= 500V, V
GS
= 0V
V
GS
=
±30V,
V
DS
= 0V
I
D
=
1.5A,
V
DS
=
10V
I
D
=
1.5A,
V
GS
=
10V
I
D
= 0.3mA, V
DS
=
10V
I
S
=
1.5A,
V
GS
= 0V
junction to case
V
DD
= 400V, V
GS =
10
V,
I
D =
3A
V
DS
=
10V,
V
GS
= 0V, f =
1MH
Z
2SK2182( F3F50VX2 )
Min.
500
Typ.
Max.
250
±0.1
0.9
2.5
2.1
1.8
3.0
2.3
3.5
1.5
5.0
Unit
V
μA
S
Ω
V
℃/Ｗ
nC
pF
80
140
ns
I
D
=
1.5A,
V
GS
=
10V,
R
L
=
100Ω
15
400
30
90
45
90
Copyright & Copy;2000 Shindengen Electric Mfg.Co.Ltd
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