BLF7G27L-150P;
BLF7G27LS-150P
Power LDMOS transistor
Rev. 3 — 1 September 2015
Product data sheet
1. Product profile
1.1 General description
150 W LDMOS power transistor for base station applications at frequencies from
2500 MHz to 2700 MHz.
Table 1.
Typical performance
Typical RF performance at T
case
= 25
C in a common source class-AB production test circuit.
Mode of operation
IS-95
f
(MHz)
2500 to 2700
Single carrier W-CDMA 2500 to 2700
[1]
[2]
I
Dq
(mA)
1200
1200
V
DS
P
L(AV)
(V)
28
28
(W)
30
45
G
p
D
ACPR
885k
ACPR
5M
(dBc)
-
38
[2]
47
[1]
-
(dB) (%) (dBc)
16.5 26
16.5 31
Single carrier IS-95 with pilot, paging, sync and 6 traffic channels (Walsh codes 8 - 13). PAR = 9.7 dB at
0.01 % probability on the CCDF. Channel bandwidth is 1.2288 MHz.
3GPP; test model 1; 64 DPCH; PAR = 7.2 dB at 0.01 % probability on CCDF. Channel bandwidth is 3.84
MHz.
1.2 Features and benefits
Excellent ruggedness
High efficiency
Low R
th
providing excellent thermal stability
Designed for broadband operation (2500 MHz to 2700 MHz)
Lower output capacitance for improved performance in Doherty applications
Designed for low memory effects providing excellent pre-distortability
Internally matched for ease of use
Integrated ESD protection
Compliant to Directive 2002/95/EC, regarding Restriction of Hazardous Substances
(RoHS)
1.3 Applications
RF power amplifiers for base stations and multi carrier applications in the 2500 MHz to
2700 MHz frequency range
BLF7G27L-150P; BLF7G27LS-150P
Power LDMOS transistor
2. Pinning information
Table 2.
Pin
1
2
3
4
5
Pinning
Description
drain1
drain2
gate1
gate2
source
[1]
Simplified outline
Graphic symbol
BLF7G27L-150P (SOT539A)
1
2
5
3
3
4
4
5
1
2
sym117
BLF7G27LS-150P (SOT539B)
1
2
3
4
5
drain1
drain2
gate1
gate2
source
[1]
1
2
5
1
3
4
3
5
4
2
sym117
[1]
Connected to flange.
3. Ordering information
Table 3.
Ordering information
Package
Name Description
BLF7G27L-150P
BLF7G27LS-150P
-
-
flanged balanced LDMOST ceramic package;
2 mounting holes; 4 leads
earless flanged balanced LDMOST ceramic package;
4 leads
Version
SOT539A
SOT539B
Type number
4. Limiting values
Table 4.
Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol
V
DS
V
GS
I
D
T
stg
T
j
Parameter
drain-source voltage
gate-source voltage
drain current
storage temperature
junction temperature
Conditions
Min
-
0.5
-
65
-
Max
65
+13
37
+150
225
Unit
V
V
A
C
C
BLF7G27L-150P_7G27LS-150P#3
All information provided in this document is subject to legal disclaimers.
© Ampleon The Netherlands B.V. 2015. All rights reserved.
Product data sheet
Rev. 3 — 1 September 2015
2 of 14
BLF7G27L-150P; BLF7G27LS-150P
Power LDMOS transistor
5. Thermal characteristics
Table 5.
Symbol
R
th(j-c)
Thermal characteristics
Parameter
thermal resistance from junction to case
Conditions
T
case
= 80
C;
P
L
= 30 W
Typ
0.25
Unit
K/W
6. Characteristics
Table 6.
Characteristics
T
j
= 25
C unless otherwise specified.
Symbol Parameter
V
GS(th)
I
DSS
I
DSX
I
GSS
g
fs
R
DS(on)
gate-source threshold voltage
drain leakage current
drain cut-off current
gate leakage current
forward transconductance
Conditions
V
DS
= 10 V; I
D
= 100 mA
V
GS
= 0 V; V
DS
= 28 V
V
GS
= V
GS(th)
+ 3.75 V;
V
DS
= 10 V
V
GS
= 11 V; V
DS
= 0 V
V
DS
= 10 V; I
D
= 3.57 A
Min
65
1.3
-
Typ
-
1.9
-
Max Unit
-
2.3
5
-
500
-
-
V
V
A
A
nA
S
V
(BR)DSS
drain-source breakdown voltage V
GS
= 0 V; I
D
= 1 mA
16.75 19
-
-
-
-
0.86
0.14
drain-source on-state resistance V
GS
= V
GS(th)
+ 3.75 V;
I
D
= 3.5 A
7. Test information
Remark:
All testing performed in a class-AB production test circuit.
Table 7.
Functional test information
Mode of operation: 1-carrier N-CDMA, single carrier IS-95 with pilot, paging, sync and 6 traffic
channels (Walsh codes 8 - 13). PAR = 9.7 dB at 0.01 % probability on the CCDF, channel bandwidth
is 1.2288 MHz; f
1
= 2500 MHz; f
2
= 2700 MHz; RF performance at V
DS
= 28 V; I
Dq
= 1200 mA;
T
case
= 25
C; unless otherwise specified.
Symbol
P
L(AV)
G
p
RL
in
D
ACPR
885k
Parameter
average output power
power gain
input return loss
drain efficiency
adjacent channel power ratio (885 kHz)
Conditions
Min Typ Max Unit
-
-
22
30
-
W
dB
dB
%
dBc
14.8 16.5 -
10
-
26
-
43 47
-
7.1 Ruggedness in class-AB operation
The BLF7G27L-150P and BLF7G27LS-150P are capable of withstanding a load
mismatch corresponding to VSWR = 20 : 1 through all phases under the following
conditions: V
DS
= 28 V; I
Dq
= 1200 mA; P
L
= 35 W (IS-95); f = 2500 MHz.
BLF7G27L-150P_7G27LS-150P#3
All information provided in this document is subject to legal disclaimers.
© Ampleon The Netherlands B.V. 2015. All rights reserved.
Product data sheet
Rev. 3 — 1 September 2015
3 of 14
BLF7G27L-150P; BLF7G27LS-150P
Power LDMOS transistor
7.2 Single carrier IS-95
Single carrier IS-95 with pilot, paging, sync and 6 traffic channels (Walsh codes 8 - 13).
PAR = 9.7 dB at 0.01 % probability on the CCDF. Channel bandwidth is 1.2288 MHz.
17
G
p
(dB)
16
(1)
(2)
(3)
001aam987
50
η
D
(%)
40
001aam988
(1)
(3)
(2)
30
20
15
10
14
0
20
40
60
80
100
P
L
(W)
0
0
20
40
60
80
100
P
L
(W)
V
DS
= 28 V; I
Dq
= 1200 mA.
(1) f = 2500 MHz
(2) f = 2600 MHz
(3) f = 2700 MHz
V
DS
= 28 V; I
Dq
= 1200 mA.
(1) f = 2500 MHz
(2) f = 2600 MHz
(3) f = 2700 MHz
Fig 1.
Single carrier IS-95 power gain as a function of
load power; typical values
Fig 2.
Single carrier IS-95 drain efficiency as a
function of load power; typical values
BLF7G27L-150P_7G27LS-150P#3
All information provided in this document is subject to legal disclaimers.
© Ampleon The Netherlands B.V. 2015. All rights reserved.
Product data sheet
Rev. 3 — 1 September 2015
4 of 14
BLF7G27L-150P; BLF7G27LS-150P
Power LDMOS transistor
0
ACPR
885
(dBc)
−10
−20
−30
−40
−50
−60
−70
(3)
(2)
(1)
001aam989
0
ACPR
1980
(dBc)
−20
001aam990
−40
(3)
(2)
(1)
−60
0
20
40
60
80
100
P
L
(W)
−80
0
20
40
60
80
100
P
L
(W)
V
DS
= 28 V; I
Dq
= 1200 mA.
(1) f = 2500 MHz
(2) f = 2600 MHz
(3) f = 2700 MHz
V
DS
= 28 V; I
Dq
= 1200 mA.
(1) f = 2500 MHz
(2) f = 2600 MHz
(3) f = 2700 MHz
Fig 3.
Single carrier IS-95 ACPR at 885 kHz as a
function of load power; typical values
Fig 4.
Single carrier IS-95 ACPR at 1980 kHz as a
function of load power; typical values
12
PAR
001aam991
250
P
L(M)
(W)
200
(1)
(2)
(3)
001aam992
8
150
4
(1)
(2)
(3)
100
50
0
0
20
40
60
80
100
P
L
(W)
0
0
20
40
60
80
100
P
L
(W)
V
DS
= 28 V; I
Dq
= 1200 mA.
(1) f = 2500 MHz
(2) f = 2600 MHz
(3) f = 2700 MHz
V
DS
= 28 V; I
Dq
= 1200 mA.
(1) f = 2500 MHz
(2) f = 2600 MHz
(3) f = 2700 MHz
Fig 5.
Single carrier IS-95 peak-to-average power
ratio as a function of load power;
typical values
Fig 6.
Single carrier IS-95 peak power as a function
of load power; typical values
BLF7G27L-150P_7G27LS-150P#3
All information provided in this document is subject to legal disclaimers.
© Ampleon The Netherlands B.V. 2015. All rights reserved.
Product data sheet
Rev. 3 — 1 September 2015
5 of 14
FPGA/CPLD
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