QS.IS.E.IJ ^s.m.l-C.oruL.ckoi ZPtoductd, tfne.
20 STERN AVE.
SPRINGFIELD, NEW JERSEY 07081
U.S.A.
TELEPHONE: (973) 376-2922
(212)227-6005
FAX: (973) 378-8960
BDT65; 65A
BDT65B; 65C
SILICON DARLINGTON POWER TRANSISTORS
NPN epitaxial base transistors in monolithic Darlington circuit for audio output stages and general
purpose amplifier and switching applications. TO-220 plastic envelope. PNP complements are
BDT64; BDT64A; BDT64B and BDT64C.
QUICK REFERENCE DATA
BDT65
Collector-base voltage (open emitter)
Collector-emitter voltage (open base)
Emitter-base voltage (open collector)
Collector current (d.c.)
Total power dissipation up to T
m
j, = 25 °C
Junction temperature
D.C. current gain
I
C
-5A;V
C E
= 4V
MECHANICAL DATA
Fig. 1 TO-220.
Collector connected
to mounting base.
J(J3
65A
80
80
5
658
100
100
5
12
125
150
65C
120 V
120 V
5V
A
W
<>C
VCBO
V
CEO
VEBO
\
?t
o
t
Tj
h
FE
rnax
-
max
-
max
-
max
-
max
-
60
60
5
max.
>
1000
Dimensions in mm
"
max"*"
"*"
m
ax
1.3-**
4
5
-•• 3.7 ^-
»—•
f
4
^^\l
^4^
^'"
1
1
1
1
;
5.9
mln
.
(Y\
\tv
I
t,
L.^-J
158
max
-J
W" T
1
j
T
i
f
m$x
(3x)
-~-2A
USA060 1
2.64
2.5*
NJ Semi-Conductors reserves the right to change test conditions, parameters limits and package dimensions without
notice information famished by NJ Semi-Conductors is believed to be both accurate and reliable at the time of going to
press. However NJ Semi-Conductors assumes no responsibility for any errors or omissions discovered in its use. N J
Semi-Conductors encourages customers to verily that datasheets are current before placing orders.
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