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70V7339S133BCGI8: 产品描述Dual-Port SRAM, 512KX18, 4.2ns, CMOS, PBGA256, 17 X 17 MM, 1.4 MM HEIGHT, 1 MM PITCH, GREEN, BGA-256; 产品类别存储存储; 文件大小739KB，共22页; 制造商IDT (Integrated Device Technology)

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70V7339S133BCGI8概述

Dual-Port SRAM, 512KX18, 4.2ns, CMOS, PBGA256, 17 X 17 MM, 1.4 MM HEIGHT, 1 MM PITCH, GREEN, BGA-256

70V7339S133BCGI8规格参数

参数名称	属性值
厂商名称	IDT (Integrated Device Technology)
包装说明	LBGA,
Reach Compliance Code	compliant
Is Samacsys	N
最长访问时间	4.2 ns
其他特性	PIPELINED ARCHITECTURE OR FLOW-THROUGH
JESD-30 代码	S-PBGA-B256
长度	17 mm
内存密度	9437184 bit
内存集成电路类型	DUAL-PORT SRAM
内存宽度	18
功能数量	1
端子数量	256
字数	524288 words
字数代码	512000
工作模式	SYNCHRONOUS
最高工作温度	85 °C
最低工作温度	-40 °C
组织	512KX18
封装主体材料	PLASTIC/EPOXY
封装代码	LBGA
封装形状	SQUARE
封装形式	GRID ARRAY, LOW PROFILE
并行/串行	SERIAL
座面最大高度	1.4 mm
最大供电电压 (Vsup)	3.45 V
最小供电电压 (Vsup)	3.15 V
标称供电电压 (Vsup)	3.3 V
表面贴装	YES
技术	CMOS
温度等级	INDUSTRIAL
端子形式	BALL
端子节距	1 mm
端子位置	BOTTOM
宽度	17 mm
Base Number Matches	1

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HIGH-SPEED 3.3V 512K x 18

SYNCHRONOUS

BANK-SWITCHABLE

DUAL-PORT STATIC RAM

WITH 3.3V OR 2.5V INTERFACE

Features:

◆

IDT70V7339S

◆

512K x 18 Synchronous Bank-Switchable Dual-ported SRAM

Architecture

–

64 independent 8K x 18 banks

– 9 megabits of memory on chip

Bank access controlled via bank address pins

High-speed data access

– Commercial: 3.4ns (200MHz)/3.6ns (166MHz)/

4.2ns (133MHz) (max.)

– Industrial: 3.6ns (166MHz)/4.2ns (133MHz) (max.)

Selectable Pipelined or Flow-Through output mode

Counter enable and repeat features

Dual chip enables allow for depth expansion without

additional logic

Full synchronous operation on both ports

– 5ns cycle time, 200MHz operation (14Gbps bandwidth)

– Fast 3.4ns clock to data out

◆

– 1.5ns setup to clock and 0.5ns hold on all control, data, and

address inputs @ 200MHz

– Data input, address, byte enable and control registers

– Self-timed write allows fast cycle time

Separate byte controls for multiplexed bus and bus match-

ing compatibility

LVTTL- compatible, 3.3V (±150mV) power supply

for core

LVTTL compatible, selectable 3.3V (±150mV) or 2.5V

(±100mV) power supply for I/Os and control signals on each

port

Industrial temperature range (-40°C to +85°C) is

available at 166MHz and 133MHz

Available in 208-pin fine pitch Ball Grid Array (fpBGA) and

256-pin Ball Grid Array (BGA)

Supports JTAG features compliant with IEEE 1149.1

Green parts available, see ordering information

Functional Block Diagram

PL/FT

OPT

CLK

ADS

CNTEN

REPEAT

R/W

PL/FT

OPT

CLK

ADS

CNTEN

REPEAT

R/W

CONTROL

LOGIC

MUX

8Kx18

MEMORY

ARRAY

(BANK 0)

MUX

CONTROL

LOGIC

I/O

0L-17L

I/O

CONTROL

MUX

8Kx18

MEMORY

ARRAY

(BANK 1)

MUX

I/O

CONTROL

I/O

0R-17R

12L

ADDRESS

DECODE

ADDRESS

DECODE

12R

BANK

DECODE

MUX

8Kx18

MEMORY

ARRAY

(BANK 63)

BANK

DECODE

NOTE:

1. The Bank-Switchable dual-port uses a true SRAM core

instead of the traditional dual-port SRAM core. As a result, it

has unique operating characteristics. Please refer to the

functional description on page 18 for details.

MUX

TDI

TDO

JTAG

TMS

TCK

TRST

5628 drw 01

AUGUST 2015

DSC 5628/10

70V7339S133BCGI8相似产品对比

	70V7339S133BCGI8	70V7339S200BCG8	70V7339S133BCG8	70V7339S133BFG8	70V7339S133BFGI8	70V7339S166BCG8	70V7339S166BCGI8
描述	Dual-Port SRAM, 512KX18, 4.2ns, CMOS, PBGA256, 17 X 17 MM, 1.4 MM HEIGHT, 1 MM PITCH, GREEN, BGA-256	Dual-Port SRAM, 512KX18, 3.4ns, CMOS, PBGA256, 17 X 17 MM, 1.4 MM HEIGHT, 1 MM PITCH, GREEN, BGA-256	Dual-Port SRAM, 512KX18, 4.2ns, CMOS, PBGA256, 17 X 17 MM, 1.4 MM HEIGHT, 1 MM PITCH, GREEN, BGA-256	Dual-Port SRAM, 512KX18, 4.2ns, CMOS, PBGA208, 15 X 15 MM, 1.40MM HEIGHT, 0.80 MM PITCH, GREEN, FPBGA-208	Dual-Port SRAM, 512KX18, 4.2ns, CMOS, PBGA208, 15 X 15 MM, 1.40MM HEIGHT, 0.80 MM PITCH, GREEN, FPBGA-208	Dual-Port SRAM, 512KX18, 3.6ns, CMOS, PBGA256, 17 X 17 MM, 1.4 MM HEIGHT, 1 MM PITCH, GREEN, BGA-256	Dual-Port SRAM, 512KX18, 3.6ns, CMOS, PBGA256, 17 X 17 MM, 1.4 MM HEIGHT, 1 MM PITCH, GREEN, BGA-256
厂商名称	IDT (Integrated Device Technology)	IDT (Integrated Device Technology)	IDT (Integrated Device Technology)	IDT (Integrated Device Technology)	IDT (Integrated Device Technology)	IDT (Integrated Device Technology)	IDT (Integrated Device Technology)
包装说明	LBGA,	LBGA,	LBGA,	LFBGA,	LFBGA,	LBGA,	LBGA,
Reach Compliance Code	compliant	compliant	compliant	compliant	compliant	compliant	compliant
最长访问时间	4.2 ns	3.4 ns	4.2 ns	4.2 ns	4.2 ns	3.6 ns	3.6 ns
其他特性	PIPELINED ARCHITECTURE OR FLOW-THROUGH	PIPELINED ARCHITECTURE OR FLOW-THROUGH	PIPELINED ARCHITECTURE OR FLOW-THROUGH	PIPELINED ARCHITECTURE OR FLOW-THROUGH	PIPELINED ARCHITECTURE OR FLOW-THROUGH	PIPELINED ARCHITECTURE OR FLOW-THROUGH	PIPELINED ARCHITECTURE OR FLOW-THROUGH
JESD-30 代码	S-PBGA-B256	S-PBGA-B256	S-PBGA-B256	S-PBGA-B208	S-PBGA-B208	S-PBGA-B256	S-PBGA-B256
长度	17 mm	17 mm	17 mm	15 mm	15 mm	17 mm	17 mm
内存密度	9437184 bit	9437184 bit	9437184 bit	9437184 bit	9437184 bit	9437184 bit	9437184 bit
内存集成电路类型	DUAL-PORT SRAM	DUAL-PORT SRAM	DUAL-PORT SRAM	MULTI-PORT SRAM	MULTI-PORT SRAM	MULTI-PORT SRAM	MULTI-PORT SRAM
内存宽度	18	18	18	18	18	18	18
功能数量	1	1	1	1	1	1	1
端子数量	256	256	256	208	208	256	256
字数	524288 words	524288 words	524288 words	524288 words	524288 words	524288 words	524288 words
字数代码	512000	512000	512000	512000	512000	512000	512000
工作模式	SYNCHRONOUS	SYNCHRONOUS	SYNCHRONOUS	SYNCHRONOUS	SYNCHRONOUS	SYNCHRONOUS	SYNCHRONOUS
最高工作温度	85 °C	70 °C	70 °C	70 °C	85 °C	70 °C	85 °C
组织	512KX18	512KX18	512KX18	512KX18	512KX18	512KX18	512KX18
封装主体材料	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY
封装代码	LBGA	LBGA	LBGA	LFBGA	LFBGA	LBGA	LBGA
封装形状	SQUARE	SQUARE	SQUARE	SQUARE	SQUARE	SQUARE	SQUARE
封装形式	GRID ARRAY, LOW PROFILE	GRID ARRAY, LOW PROFILE	GRID ARRAY, LOW PROFILE	GRID ARRAY, LOW PROFILE, FINE PITCH	GRID ARRAY, LOW PROFILE, FINE PITCH	GRID ARRAY, LOW PROFILE	GRID ARRAY, LOW PROFILE
并行/串行	SERIAL	SERIAL	SERIAL	SERIAL	SERIAL	SERIAL	SERIAL
座面最大高度	1.4 mm	1.4 mm	1.4 mm	1.4 mm	1.4 mm	1.4 mm	1.4 mm
最大供电电压 (Vsup)	3.45 V	3.45 V	3.45 V	3.45 V	3.45 V	3.45 V	3.45 V
最小供电电压 (Vsup)	3.15 V	3.15 V	3.15 V	3.15 V	3.15 V	3.15 V	3.15 V
标称供电电压 (Vsup)	3.3 V	3.3 V	3.3 V	3.3 V	3.3 V	3.3 V	3.3 V
表面贴装	YES	YES	YES	YES	YES	YES	YES
技术	CMOS	CMOS	CMOS	CMOS	CMOS	CMOS	CMOS
温度等级	INDUSTRIAL	COMMERCIAL	COMMERCIAL	COMMERCIAL	INDUSTRIAL	COMMERCIAL	INDUSTRIAL
端子形式	BALL	BALL	BALL	BALL	BALL	BALL	BALL
端子节距	1 mm	1 mm	1 mm	0.8 mm	0.8 mm	1 mm	1 mm
端子位置	BOTTOM	BOTTOM	BOTTOM	BOTTOM	BOTTOM	BOTTOM	BOTTOM
宽度	17 mm	17 mm	17 mm	15 mm	15 mm	17 mm	17 mm

70V7339S133BCGI8

70V7339S133BCGI8概述

70V7339S133BCGI8规格参数

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70V7339S133BCGI8相似产品对比

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