Not Recommended for New Design
Please Use ZTX458
NPN SILICON PLANAR
HIGH VOLTAGE TRANSISTOR
ISSUE 2 MARCH 94
FEATURES
* High voltage
APPLICATIONS
* Telephone dialler circuit
MPSA44
E
B
C
TO92
ABSOLUTE MAXIMUM RATINGS.
PARAMETER
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Continuous Collector Current
Power Dissipation at T
amb
=25°C
Operating and Storage Temperature Range
SYMBOL
V
CBO
V
CEO
V
EBO
I
C
P
tot
T
j
:T
stg
VALUE
400
400
6
300
625
-55 to +150
UNIT
V
V
V
mA
mW
°C
ELECTRICAL CHARACTERISTICS (at T
amb
= 25°C).
PARAMETER
Collector-Base
Breakdown Voltage
Collector-Emitter
Breakdown Voltage
Collector-Emitter
Breakdown Voltage
Emitter-Base
Breakdown Voltage
Collector Cut-Off
Current
Collector Cut-Off
Current
Collector-Emitter
Saturation Voltage
Base-Emitter
Saturation Voltage
SYMBOL
V
(BR)CBO
V
(BR)CEO
V
(BR)CES
V
(BR)EBO
I
CBO
I
CES
MIN.
400
400
400
6
0.1
500
0.1
0.4
0.5
0.75
0.75
40
50
45
40
TYP.
MAX.
UNIT
V
V
V
V
µ
A
CONDITIONS.
I
C
=100
µ
A, I
E
=0
I
C
=1mA, I
B
=0*
IC=100
µ
A, I
E
=0
I
E
=10
µ
A, I
C
=0
V
CB
=400V, I
E
=0
VCE=400V
V
EB
=4V, I
C
=0
I
C
=1mA, I
B
=0.1mA*
I
C
=10mA, I
B
=1mA*
I
C
=50mA, I
B
=5mA*
I
C
=10mA, I
B
=1mA*
I
C
=1mA, V
CE
=10V*
I
C
=10mA, V
CE
=10V*
I
C
=50mA, V
CE
=10V*
I
C
=100mA, V
CE
=10V*
nA
µ
A
Emitter Cut-Off Current I
EBO
V
CE(sat)
V
BE(sat)
V
V
Static Forward Current h
FE
Transfer Ratio
300
*Measured under pulsed conditions. Pulse width=300
µ
s. Duty cycle
≤
2%
3-80