电子工程世界电子工程世界电子工程世界

关键词

搜索

型号

搜索

MX29LV320ATXBC-70

产品描述32M-BIT [4M x 8 / 2M x 16] SINGLE VOLTAGE 3V ONLY FLASH MEMORY
产品类别存储    存储   
文件大小616KB,共60页
制造商Macronix
官网地址http://www.macronix.com/en-us/Pages/default.aspx
下载文档 详细参数 全文预览

MX29LV320ATXBC-70概述

32M-BIT [4M x 8 / 2M x 16] SINGLE VOLTAGE 3V ONLY FLASH MEMORY

MX29LV320ATXBC-70规格参数

参数名称属性值
是否Rohs认证不符合
厂商名称Macronix
零件包装代码BGA
包装说明TFBGA, BGA48,6X8,32
针数48
Reach Compliance Codeunknow
ECCN代码3A991.B.1.A
最长访问时间70 ns
备用内存宽度8
启动块TOP
命令用户界面YES
通用闪存接口YES
数据轮询YES
JESD-30 代码R-PBGA-B48
JESD-609代码e0
长度8 mm
内存密度33554432 bi
内存集成电路类型FLASH
内存宽度16
功能数量1
部门数/规模8,63
端子数量48
字数2097152 words
字数代码2000000
工作模式ASYNCHRONOUS
最高工作温度70 °C
最低工作温度
组织2MX16
封装主体材料PLASTIC/EPOXY
封装代码TFBGA
封装等效代码BGA48,6X8,32
封装形状RECTANGULAR
封装形式GRID ARRAY, THIN PROFILE, FINE PITCH
并行/串行PARALLEL
峰值回流温度(摄氏度)NOT SPECIFIED
电源3/3.3 V
编程电压3 V
认证状态Not Qualified
就绪/忙碌YES
座面最大高度1.2 mm
部门规模8K,64K
最大待机电流0.000015 A
最大压摆率0.03 mA
最大供电电压 (Vsup)3.6 V
最小供电电压 (Vsup)2.7 V
标称供电电压 (Vsup)3 V
表面贴装YES
技术CMOS
温度等级COMMERCIAL
端子面层Tin/Lead (Sn/Pb)
端子形式BALL
端子节距0.8 mm
端子位置BOTTOM
处于峰值回流温度下的最长时间NOT SPECIFIED
切换位YES
类型NOR TYPE
宽度6 mm

文档预览

下载PDF文档
MX29LV320AT/B
32M-BIT [4M x 8 / 2M x 16] SINGLE VOLTAGE
3V ONLY FLASH MEMORY
FEATURES
GENERAL FEATURES
• 4,194,304 x 8 / 2,097,152 x 16 switchable
• Sector Structure
- 8K-Byte x 8 and 64K-Byte x 63
• Extra 64K-Byte sector for security
- Features factory locked and identifiable, and cus-
tomer lockable
• Twenty-Four Sector Groups
- Provides sector group protect function to prevent pro-
gram or erase operation in the protected sector group
- Provides chip unprotect function to allow code chang-
ing
- Provides temporary sector group unprotect function
for code changing in previously protected sector groups
• Single Power Supply Operation
- 2.7 to 3.6 volt for read, erase, and program opera-
tions
• Latch-up protected to 250mA from -1V to Vcc + 1V
• Low Vcc write inhibit is equal to or less than 1.4V
• Compatible with JEDEC standard
- Pinout and software compatible to single power sup-
ply Flash
2nd generation of 3V/32M Flash product
- Fully compatible with MX29LV320T/B device
PERFORMANCE
• High Performance
- Fast access time: 70/90ns
- Fast program time: 7us/word typical utilizing acceler-
ate function
- Fast erase time: 0.9s/sector, 35s/chip (typical)
• Low Power Consumption
- Low active read current: 10mA (typical) at 5MHz
- Low standby current: 200nA (typical)
• Minimum 100,000 erase/program cycle
• 10 years data retention
SOFTWARE FEATURES
• Erase Suspend/ Erase Resume
- Suspends sector erase operation to read data from
or program data to another sector which is not being
erased
• Status Reply
- Data polling & Toggle bits provide detection of pro-
gram and erase operation completion
• Support Common Flash Interface (CFI)
HARDWARE FEATURES
• Ready/Busy (RY/BY) Output
- Provides a hardware method of detecting program
and erase operation completion
• Hardware Reset (RESET) Input
- Provides a hardware method to reset the internal state
machine to read mode
• WP/ACC input pin
- Provides accelerated program capability
PACKAGE
• 48-Pin TSOP
• 48-Ball CSP
GENERAL DESCRIPTION
The MX29LV320AT/B is a 32-mega bit Flash memory
organized as 4M bytes of 8 bits and 2M words of 16 bits.
MXIC's Flash memories offer the most cost-effective and
reliable read/write non-volatile random access memory.
The MX29LV320AT/B is packaged in 48-pin TSOP and
48-ball CSP. It is designed to be reprogrammed and
erased in system or in standard EPROM programmers.
The standard MX29LV320AT/B offers access time as
fast as 70ns, allowing operation of high-speed micropro-
cessors without wait states. To eliminate bus conten-
tion, the MX29LV320AT/B has separate chip enable (CE)
and output enable (OE) controls.
P/N:PM1008
MXIC's Flash memories augment EPROM functionality
with in-circuit electrical erasure and programming. The
MX29LV320AT/B uses a command register to manage
this functionality.
MXIC Flash technology reliably stores memory
contents even after 100,000 erase and program
cycles. The MXIC cell is designed to optimize the
erase and program mechanisms. In addition, the
combination of advanced tunnel oxide processing
and low internal electric fields for erase and
programming operations produces reliable cycling.
REV. 1.1, MAY 28, 2004
1
如何计算FPGA设计频率
我们的设计需要多大容量的芯片?我们的设计能跑多快?这是经常困扰工程师的两个问题.对于前一个问题,我们可能还能先以一个比较大的芯片实现原型,待原型完成再选用大小合适的芯片实现.对于后者,我 ......
eeleader FPGA/CPLD
5324 flash 檫除疑问
5324falsh 檫除,falsh64k,我用后面32k作为升级程序区,在串口下载升级代码时,要先檫除, 在檫除地址0x10000以后,就出错了,具体地址没详细查询,请论坛的专家指点一下。急盼你的回答与支持 ......
newnew0601 微控制器 MCU
论坛能不能把这些人屏蔽了?
154032 ...
dontium 为我们提建议&公告
如何在 QFN 封装芯片的 PCB 的设计上得到尽可能好的串扰性能
本帖最后由 qwqwqw2088 于 2016-5-2 08:30 编辑 如何在 QFN 封装芯片的 PCB 的设计上得到尽可能好的串扰性能 http://player.youku.com/player.php/sid/XMTQ4MTYwNzg3Mg==/v.swf...
qwqwqw2088 PCB设计
高压包引脚和匝数比如何区分
我是想做一个高压直流发生器 手里刚好有一个高压包 我的想法是通过555产生方波信号来驱动MOS管来开关高压包,然后在高压包次级通过滤波来产生高压静电 不过这个高压包有10个脚,我想应该 ......
程序会不会 电源技术
关于ADS8556死机的问题~!
最近在用ADS8556,虽然它采样很准确,但存在死机问题。不知道怎么回事,跪求各位大侠给点建议。谢谢!...
yxg_541 工业自动化与控制

 
EEWorld订阅号

 
EEWorld服务号

 
汽车开发圈

 
机器人开发圈

About Us 关于我们 客户服务 联系方式 器件索引 网站地图 最新更新 手机版

站点相关: 大学堂 TI培训 Datasheet 电子工程 索引文件: 1772  1960  878  565  450  31  32  50  6  3 

器件索引   0 1 2 3 4 5 6 7 8 9 A B C D E F G H I J K L M N O P Q R S T U V W X Y Z

北京市海淀区中关村大街18号B座15层1530室 电话:(010)82350740 邮编:100190

电子工程世界版权所有 京B2-20211791 京ICP备10001474号-1 电信业务审批[2006]字第258号函 京公网安备 11010802033920号 Copyright © 2005-2026 EEWORLD.com.cn, Inc. All rights reserved