NTMFS5C430NL
Power MOSFET
40 V, 1.4 mW, 200 A, Single N−Channel
Features
•
•
•
•
Small Footprint (5x6 mm) for Compact Design
Low R
DS(on)
to Minimize Conduction Losses
Low Q
G
and Capacitance to Minimize Driver Losses
These Devices are Pb−Free and are RoHS Compliant
V
(BR)DSS
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R
DS(ON)
MAX
1.4 mW @ 10 V
I
D
MAX
200 A
MAXIMUM RATINGS
(T
J
= 25°C unless otherwise noted)
Parameter
Drain−to−Source Voltage
Gate−to−Source Voltage
Continuous Drain
Current R
qJC
(Notes 1, 3)
Power Dissipation
R
qJC
(Note 1)
Continuous Drain
Current R
qJA
(Notes 1, 2, 3)
Power Dissipation
R
qJA
(Notes 1 & 2)
Pulsed Drain Current
T
C
= 25°C
Steady
State
T
C
= 100°C
T
C
= 25°C
T
C
= 100°C
T
A
= 25°C
Steady
State
T
A
= 100°C
T
A
= 25°C
T
A
= 100°C
T
A
= 25°C, t
p
= 10
ms
I
DM
T
J
, T
stg
I
S
E
AS
V
DSM
T
L
P
D
I
D
P
D
Symbol
V
DSS
V
GS
I
D
Value
40
±20
200
140
110
53
38
27
3.8
1.9
900
−55 to
+175
120
493
48
260
A
°C
A
mJ
V
°C
1
Unit
V
V
A
40 V
2.2 mW @ 4.5 V
D (5)
W
G (4)
A
S (1,2,3)
W
N−CHANNEL MOSFET
Operating Junction and Storage Temperature
Source Current (Body Diode)
Single Pulse Drain−to−Source Avalanche
Energy (I
L(pk)
= 15 A)
Single Pulse Drain−to−Source Voltage
(t
p
= 10
ms)
Lead Temperature for Soldering Purposes
(1/8″ from case for 10 s)
MARKING
DIAGRAM
D
DFN5
(SO−8FL)
CASE 488AA
STYLE 1
S
S
S
G
D
5C430L
AYWZZ
D
D
Stresses exceeding those listed in the Maximum Ratings table may damage the
device. If any of these limits are exceeded, device functionality should not be
assumed, damage may occur and reliability may be affected.
5C430L = Specific Device Code
A
= Assembly Location
Y
= Year
W
= Work Week
ZZ
= Lot Traceability
THERMAL RESISTANCE MAXIMUM RATINGS
Parameter
Junction−to−Case − Steady State
Junction−to−Ambient − Steady State (Note 2)
Symbol
R
qJC
R
qJA
Value
1.4
40
Unit
°C/W
ORDERING INFORMATION
See detailed ordering, marking and shipping information on
page 5 of this data sheet.
1. The entire application environment impacts the thermal resistance values shown,
they are not constants and are only valid for the particular conditions noted.
2. Surface−mounted on FR4 board using a 650 mm
2
, 2 oz. Cu pad.
3. Maximum current for pulses as long as 1 second is higher but is dependent
on pulse duration and duty cycle.
©
Semiconductor Components Industries, LLC, 2016
1
June, 2017 − Rev. 3
Publication Order Number:
NTMFS5C430NL/D
NTMFS5C430NL
ELECTRICAL CHARACTERISTICS
(T
J
= 25°C unless otherwise specified)
Parameter
OFF CHARACTERISTICS
Drain−to−Source Breakdown Voltage
Drain−to−Source Breakdown Voltage
Temperature Coefficient
Zero Gate Voltage Drain Current
V
(BR)DSS
V
(BR)DSS
/
T
J
I
DSS
V
GS
= 0 V,
V
DS
= 40 V
T
J
= 25
°C
T
J
= 125°C
V
GS
= 0 V, I
D
= 250
mA
40
1.3
10
250
100
V
mV/°C
mA
nA
Symbol
Test Condition
Min
Typ
Max
Unit
Gate−to−Source Leakage Current
ON CHARACTERISTICS
(Note 4)
Gate Threshold Voltage
Threshold Temperature Coefficient
Drain−to−Source On Resistance
I
GSS
V
DS
= 0 V, V
GS
= 20 V
V
GS(TH)
V
GS(TH)
/T
J
R
DS(on)
V
GS
= V
DS
, I
D
= 250
mA
1.2
−5.6
2.0
V
mV/°C
V
GS
= 10 V
V
GS
= 4.5 V
I
D
= 50 A
I
D
= 50 A
1.2
1.7
180
1.4
2.2
mW
S
Forward Transconductance
g
FS
V
DS
= 15 V, I
D
= 50 A
CHARGES, CAPACITANCES & GATE RESISTANCE
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Total Gate Charge
Total Gate Charge
Threshold Gate Charge
Gate−to−Source Charge
Gate−to−Drain Charge
Plateau Voltage
SWITCHING CHARACTERISTICS
(Note 5)
Turn−On Delay Time
Rise Time
Turn−Off Delay Time
Fall Time
DRAIN−SOURCE DIODE CHARACTERISTICS
Forward Diode Voltage
V
SD
V
GS
= 0 V,
I
S
= 50 A
T
J
= 25°C
T
J
= 125°C
0.81
0.68
61
V
GS
= 0 V, dI
s
/dt = 100 A/ms,
I
S
= 50 A
29
32
80
77
38
50
92
nC
ns
1.2
V
t
d(ON)
t
r
t
d(OFF)
t
f
V
GS
= 4.5 V, V
DS
= 20 V,
I
D
= 50 A, R
G
= 1.0
W
15
140
31
9
28
273
67
19
ns
C
ISS
C
OSS
C
RSS
Q
G(TOT)
Q
G(TOT)
Q
G(TH)
Q
GS
Q
GD
V
GP
V
GS
= 4.5 V, V
DS
= 20 V; I
D
= 50 A
V
GS
= 4.5 V, V
DS
= 20 V; I
D
= 50 A
V
GS
= 10 V, V
DS
= 20 V; I
D
= 50 A
V
GS
= 0 V, f = 1 MHz, V
DS
= 20 V
4300
1900
72
32
70
7.0
12
9.0
2.9
4942
2850
144
45
82
10
15
16
5.0
V
nC
pF
Reverse Recovery Time
Charge Time
Discharge Time
Reverse Recovery Charge
t
RR
t
a
t
b
Q
RR
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.
4. Pulse Test: pulse width
v
300
ms,
duty cycle
v
2%.
5. Switching characteristics are independent of operating junction temperatures.
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NTMFS5C430NL
TYPICAL CHARACTERISTICS
280
240
I
D
, DRAIN CURRENT (A)
200
3.2 V
160
120
80
40
0
0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0 2.2 2.4 2.6 2.8 3.0
V
DS
, DRAIN−TO−SOURCE VOLTAGE (V)
3.0 V
2.8 V
2.6 V
3.6 V to
10 V
3.4 V
I
D
, DRAIN CURRENT (A)
280
V
DS
= 5 V
240
200
160
120
80
40
0
1
1.5
2
2.5
3
3.5
4
V
GS
, GATE−TO−SOURCE VOLTAGE (V)
T
J
= 25°C
T
J
= 125°C
T
J
= −55°C
Figure 1. On−Region Characteristics
R
DS(on)
, DRAIN−TO−SOURCE RESISTANCE (mW)
5.0
4.5
4.0
3.5
3.0
2.5
2.0
1.5
1.0
0.5
0.0
2.0
3.0
4.0
5.0
6.0
7.0
8.0
9.0
10.0
V
GS
, GATE VOLTAGE (V)
T
J
= 25°C
I
D
= 50 A
R
DS(on)
, DRAIN−TO−SOURCE RESISTANCE (mW)
3.0
Figure 2. Transfer Characteristics
T
J
= 25°C
2.5
2.0
1.5
V
GS
= 10 V
1.0
0.5
0
20
V
GS
= 4.5 V
60
100
140
180
220
260
I
D
, DRAIN CURRENT (A)
Figure 3. On−Resistance vs. Gate−to−Source
Voltage
100000
R
DS(on)
, NORMALIZED DRAIN−TO−
SOURCE RESISTANCE
1.9
1.7
1.5
1.3
1.1
0.9
0.7
10
V
GS
= 10 V
I
D
= 50 A
I
DSS
, LEAKAGE (nA)
10000
Figure 4. On−Resistance vs. Drain Current and
Gate Voltage
T
J
= 175°C
T
J
= 125°C
1000
T
J
= 85°C
100
−50
−25
0
25
50
75
100
125
150
175
0
10
20
30
40
T
J
, JUNCTION TEMPERATURE (°C)
V
DS
, DRAIN−TO−SOURCE VOLTAGE (V)
Figure 5. On−Resistance Variation with
Temperature
Figure 6. Drain−to−Source Leakage Current
vs. Voltage
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NTMFS5C430NL
TYPICAL CHARACTERISTICS
10000
C
ISS
C, CAPACITANCE (pF)
C
OSS
1000
V
GS
, GATE−TO−SOURCE VOLTAGE (V)
10
8
6
4
2
0
0
10
20
Q
GS
Q
GD
Q
T
C
RSS
100
V
GS
= 0 V
T
J
= 25°C
f = 1 MHz
10
0
10
20
30
40
V
DS
, DRAIN−TO−SOURCE VOLTAGE (V)
V
DS
= 20 V
T
J
= 25°C
I
D
= 50 A
30
40
50
60
70
Q
G
, TOTAL GATE CHARGE (nC)
Figure 7. Capacitance Variation
1000.0
t
r
t
f
100.0
t, TIME (ns)
t
d(off)
t
d(on)
100.0
I
S
, SOURCE CURRENT (A)
Figure 8. Gate−to−Source Voltage vs. Total
Charge
T
J
= 125°C
10.0
T
J
= 25°C
10.0
V
GS
= 4.5 V
V
DD
= 20 V
I
D
= 50 A
1.0
1
10
R
G
, GATE RESISTANCE (W)
100
T
J
= −55°C
1.0
0.4
0.5
0.6
0.7
0.8
0.9
1.0
V
SD
, SOURCE−TO−DRAIN VOLTAGE (V)
Figure 9. Resistive Switching Time Variation
vs. Gate Resistance
1000
100
Figure 10. Diode Forward Voltage vs. Current
I
D
, DRAIN CURRENT (A)
100
I
PEAK
, (A)
T
J
= 25°C
T
J
= 100°C
10
10
T
C
= 25°C
V
GS
≤
10 V
Single Pulse
R
DS(on)
Limit
Thermal Limit
Package Limit
1
V
DS
(V)
10
500
ms
1 ms
1
10 ms
1
100
1E−4
1E−3
TIME IN AVALANCHE (s)
10E−2
0.1
0.1
Figure 11. Safe Operating Area
Figure 12. I
PEAK
vs. Time in Avalanche
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NTMFS5C430NL
TYPICAL CHARACTERISTICS
100
50% Duty Cycle
10
R
qJA
(°C/W)
20%
10%
5%
2%
1%
1
0.1
Single Pulse
0.01
0.000001
0.00001
0.0001
0.001
0.01
0.1
1
10
100
1000
PULSE TIME (sec)
Figure 13. Thermal Characteristics
DEVICE ORDERING INFORMATION
Device
NTMFS5C430NLT1G
NTMFS5C430NLT3G
Marking
5C430L
5C430L
Package
DFN5
(Pb−Free)
DFN5
(Pb−Free)
Shipping
†
1500 / Tape & Reel
5000 / Tape & Reel
†For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging
Specifications Brochure, BRD8011/D.
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