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IDT70V3599S133BFI

产品描述64K X 36 DUAL-PORT SRAM, 15 ns, PBGA256
产品类别存储   
文件大小356KB,共23页
制造商IDT(艾迪悌)
官网地址http://www.idt.com/
下载文档 详细参数 全文预览

IDT70V3599S133BFI概述

64K X 36 DUAL-PORT SRAM, 15 ns, PBGA256

IDT70V3599S133BFI规格参数

参数名称属性值
最大时钟频率133 MHz
功能数量1
端子数量256
最小工作温度0.0 Cel
最大工作温度70 Cel
额定供电电压3.3 V
最小供电/工作电压3.15 V
最大供电/工作电压3.45 V
加工封装描述17 X 17 MM, 1.40 MM HEIGHT, 1 MM PITCH, BGA-256
each_compliYes
状态Active
sub_categorySRAMs
ccess_time_max15 ns
i_o_typeCOMMON
jesd_30_codeS-PBGA-B256
jesd_609_codee0
存储密度2.36E6 bi
内存IC类型DUAL-PORT SRAM
内存宽度36
moisture_sensitivity_level3
端口数2
位数65536 words
位数64K
操作模式SYNCHRONOUS
组织64KX36
输出特性3-STATE
包装材料PLASTIC/EPOXY
ckage_codeLBGA
ckage_equivalence_codeBGA256,16X16,40
包装形状SQUARE
包装尺寸GRID ARRAY, LOW PROFILE
串行并行PARALLEL
eak_reflow_temperature__cel_225
wer_supplies__v_2.5/3.3,3.3
qualification_statusCOMMERCIAL
seated_height_max1.7 mm
standby_current_max0.0300 Am
standby_voltage_mi3.15 V
最大供电电压0.4000 Am
表面贴装YES
工艺CMOS
温度等级COMMERCIAL
端子涂层TIN LEAD
端子形式BALL
端子间距1 mm
端子位置BOTTOM
ime_peak_reflow_temperature_max__s_20
length17 mm
width17 mm
dditional_featureFLOW-THROUGH OR PIPELINED ARCHITECTURE

文档预览

下载PDF文档
HIGH-SPEED 3.3V
128/64K x 36
SYNCHRONOUS
IDT70V3599/89S
DUAL-PORT STATIC RAM
WITH 3.3V OR 2.5V INTERFACE
Features:
True Dual-Port memory cells which allow simultaneous
access of the same memory location
High-speed data access
– Commercial: 3.6ns (166MHz)/4.2ns (133MHz) (max.)
– Industrial: 4.2ns (133MHz) (max.)
Selectable Pipelined or Flow-Through output mode
Counter enable and repeat features
Dual chip enables allow for depth expansion without
additional logic
Full synchronous operation on both ports
– 6ns cycle time, 166MHz operation (12Gbps bandwidth)
– Fast 3.6ns clock to data out
– 1.7ns setup to clock and 0.5ns hold on all control, data, and
address inputs @ 166MHz
– Data input, address, byte enable and control registers
– Self-timed write allows fast cycle time
Separate byte controls for multiplexed bus and bus
matching compatibility
Dual Cycle Deselect (DCD) for Pipelined Output mode
LVTTL- compatible, 3.3V (±150mV) power supply
for core
LVTTL compatible, selectable 3.3V (±150mV) or 2.5V
(±100mV) power supply for I/Os and control signals on
each port
Industrial temperature range (-40°C to +85°C) is
available at 133MHz.
Available in a 208-pin Plastic Quad Flatpack (PQFP),
208-pin fine pitch Ball Grid Array (fpBGA), and 256-pin Ball
Grid Array (BGA)
Supports JTAG features compliant with IEEE 1149.1
Functional Block Diagram
BE
3L
BE
2L
BE
1L
BE
0L
BE
3R
BE
2R
BE
1R
BE
0R
FT/PIPE
L
1/0
0a 1a
a
0b 1b
b
0c 1c
c
0d 1d
d
1d 0d
d
1c 0c
c
1b 0b
b
1a 0a
a
1/0
FT/PIPE
R
R/W
L
R/W
R
CE
0L
CE
1L
1
0
1/0
B
W
0
L
B
W
1
L
B B B
WWW
2 3 3
L L R
B
W
2
R
B B
WW
1 0
R R
1
0
1 /0
CE
0R
CE
1R
OE
L
OE
R
Dout0-8_L
Dout9-17_L
Dout18-26_L
Dout27-35_L
Dout0-8_R
Dout9-17_R
Dout18-26_R
Dout27-35_R
1d 0d
1c 0c 1b 0b 1a 0a
a b cd
0a 1a 0b 1b
0c 1c 0d 1d
0/1
FT/PIPE
L
0/1
FT/PIPE
R
d cba
128K x 36
MEMORY
ARRAY
I/O
0L
- I/O
35 L
Din_L
Din_R
I/O
0R
- I/O
35R
CLK
L
A
16L (1)
A
0L
REPEAT
L
ADS
L
CNTEN
L
CLK
R
,
A
16R
(1)
Counter/
Address
Reg.
ADDR_L
ADDR_R
Counter/
Address
Reg.
A
0R
REPEAT
R
ADS
R
CNTEN
R
5617 tbl 01
TDI
NOTE:
1. A
16
is a NC for IDT70V3589.
JTAG
TDO
TCK
TMS
TRST
MAY 2003
1
DSC 5617/6
©2003 Integrated Device Technology, Inc.

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