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LY626416MN-70LL

产品描述SRAM,
产品类别存储    存储   
文件大小192KB,共14页
制造商Lyontek
官网地址http://www.lyontek.com.tw/index.html
下载文档 详细参数 全文预览

LY626416MN-70LL概述

SRAM,

LY626416MN-70LL规格参数

参数名称属性值
Objectid108136429
包装说明,
Reach Compliance Codecompliant
ECCN代码EAR99

LY626416MN-70LL文档预览

®
LY626416
Rev. 1.1
64K X 16 BIT LOW POWER CMOS SRAM
REVISION HISTORY
Revision
Rev. 1.0
Rev. 1.1
Description
Initial Issue
Revised typos in page 1,4,5(35ns to 45ns)
Issue Date
Oct.30.2007
Nov.2.2007
Lyontek Inc.
reserves the rights to change the specifications and products without notice.
40 Hsuch-Fu Rd., Hsinchu, Taiwan.
TEL: 886-3-5165511
FAX: 886-3-5165522
0
®
LY626416
Rev. 1.1
64K X 16 BIT LOW POWER CMOS SRAM
GENERAL DESCRIPTION
The LY626416 is a 1,048,576-bit low power CMOS
static random access memory organized as 65,536
words by 16 bits. It is fabricated using very high
performance, high reliability CMOS technology. Its
standby current is stable within the range of
operating temperature.
The LY626416 is well designed for low power
application, and particularly well suited for battery
back-up nonvolatile memory application.
The LY626416 operates from a single power
supply of 4.5V ~ 5.5V and all inputs and outputs are
fully TTL compatible
FEATURES
Fast access time : 45/55/70ns
Low power consumption:
Operating current : 50/40/30mA (TYP.)
Standby current : 3μA (TYP.)
Single 4.5V ~ 5.5V power supply
All inputs and outputs TTL compatible
Fully static operation
Tri-state output
Data byte control : LB# (DQ0 ~ DQ7)
UB# (DQ8 ~ DQ15)
Data retention voltage : 2.0V (MIN.)
Lead free and green package available
Package : 44-pin 400 mil TSOP-II
48-ball 6mm x 8mm TFBGA
PRODUCT FAMILY
Product
Family
LY626416(LL)
LY626416(LLE)
LY626416(LLI)
LY626416(SL)
LY626416(SLE)
LY626416(SLI)
Operating
Temperature
0 ~ 70℃
-20 ~ 80℃
-40 ~ 85℃
0 ~ 70℃
-20 ~ 80℃
-40 ~ 85℃
Vcc Range
4.5 ~ 5.5V
4.5 ~ 5.5V
4.5 ~ 5.5V
4.5 ~ 5.5V
4.5 ~ 5.5V
4.5 ~ 5.5V
Speed
45/55/70ns
45/55/70ns
45/55/70ns
45/55/70ns
45/55/70ns
45/55/70ns
Power Dissipation
Standby(I
SB1,
TYP.) Operating(Icc,TYP.)
3µA
50/40/30mA
3µA
50/40/30mA
3µA
50/40/30mA
3µA
50/40/30mA
3µA
50/40/30mA
3µA
50/40/30mA
Lyontek Inc.
reserves the rights to change the specifications and products without notice.
40 Hsuch-Fu Rd., Hsinchu, Taiwan.
TEL: 886-3-5165511
FAX: 886-3-5165522
1
®
LY626416
Rev. 1.1
64K X 16 BIT LOW POWER CMOS SRAM
PIN DESCRIPTION
SYMBOL
DESCRIPTION
Address Inputs
Chip Enable Input
Write Enable Input
Output Enable Input
Lower Byte Control
Upper Byte Control
Power Supply
Ground
FUNCTIONAL BLOCK DIAGRAM
Vcc
Vss
A0 - A15
CE#
WE#
OE#
LB#
UB#
V
CC
DQ0 – DQ15 Data Inputs/Outputs
DECODER
64Kx16
MEMORY ARRAY
A0-A15
DQ0-DQ7
Lower Byte
DQ8-DQ15
Upper Byte
V
SS
I/O DATA
CIRCUIT
COLUMN I/O
CE#
WE#
OE#
LB#
UB#
CONTROL
CIRCUIT
Lyontek Inc.
reserves the rights to change the specifications and products without notice.
40 Hsuch-Fu Rd., Hsinchu, Taiwan.
TEL: 886-3-5165511
FAX: 886-3-5165522
2
®
LY626416
Rev. 1.1
64K X 16 BIT LOW POWER CMOS SRAM
PIN CONFIGURATION
A4
A3
A2
A1
A0
CE#
DQ0
DQ1
DQ2
DQ3
Vcc
Vss
DQ4
DQ5
DQ6
DQ7
WE#
A15
A14
A13
A12
NC
1
2
3
4
5
6
7
8
44
43
42
41
40
39
38
37
A5
A6
A7
OE#
UB#
LB#
DQ15
DQ14
DQ13
DQ12
Vss
Vcc
DQ11
DQ10
DQ9
DQ8
NC
A8
A9
A10
A11
NC
LY626416
9
10
11
12
13
14
15
16
17
18
19
20
21
22
36
35
34
33
32
31
30
29
28
27
26
25
24
23
A
B
C
D
E
F
G
H
LB# OE#
DQ8 UB#
A0
A3
A1
A4
A6
A7
NC
A2
NC
CE# DQ0
DQ1 DQ2
DQ3 Vcc
DQ4 Vss
DQ9 DQ10 A5
Vss DQ11 NC
Vcc DQ12 NC
DQ14 DQ13 A14
DQ15 NC
NC
A8
A12
A9
A15 DQ5 DQ6
A13 WE# DQ7
A10
A11
NC
1
TSOP II
2
3
4
TFBGA
5
6
ABSOLUTE MAXIMUN RATINGS*
PARAMETER
Voltage on V
CC
relative to V
SS
Voltage on any other pin relative to V
SS
Operating Temperature
Storage Temperature
Power Dissipation
DC Output Current
Soldering Temperature (under 10 sec)
SYMBOL
V
T1
V
T2
T
A
T
STG
P
D
I
OUT
T
SOLDER
RATING
-0.5 to 6.5
-0.5 to V
CC
+0.5
0 to 70(C grade)
-20 to 80(E grade)
-40 to 85(I grade)
-65 to 150
1
50
260
UNIT
V
V
W
mA
*Stresses greater than those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress
rating only and functional operation of the device or any other conditions above those indicated in the operational sections of this
specification is not implied. Exposure to the absolute maximum rating conditions for extended period may affect device reliability.
Lyontek Inc.
reserves the rights to change the specifications and products without notice.
40 Hsuch-Fu Rd., Hsinchu, Taiwan.
TEL: 886-3-5165511
FAX: 886-3-5165522
3
®
LY626416
Rev. 1.1
64K X 16 BIT LOW POWER CMOS SRAM
TRUTH TABLE
MODE
Standby
Output Disable
Read
CE#
H
X
L
L
L
L
L
L
L
L
OE#
X
X
H
H
L
L
L
X
X
X
WE# LB#
X
X
H
H
H
H
H
L
L
L
X
H
L
X
L
H
L
L
H
L
UB#
X
H
X
L
H
L
L
H
L
L
I/O OPERATION
DQ0-DQ7
DQ8-DQ15
High – Z
High – Z
High – Z
High – Z
High – Z
High – Z
High – Z
High – Z
D
OUT
High – Z
High – Z
D
OUT
D
OUT
D
OUT
D
IN
High – Z
High – Z
D
IN
D
IN
D
IN
SUPPLY CURRENT
I
SB1
I
CC
,I
CC1
I
CC
,I
CC1
Write
Note:
I
CC
,I
CC1
H = V
IH
, L = V
IL
, X = Don't care.
DC ELECTRICAL CHARACTERISTICS
SYMBOL
TEST CONDITION
PARAMETER
Supply Voltage
V
CC
*1
Input High Voltage
V
IH
*2
Input Low Voltage
V
IL
Input Leakage Current
I
LI
V
CC
V
IN
V
SS
Output Leakage
V
CC
V
OUT
V
SS
,
I
LO
Current
Output Disabled
Output High Voltage
V
OH
I
OH
= -1mA
Output Low Voltage
V
OL
I
OL
= 2mA
- 45
Cycle time = Min.
I
CC
CE# = V
IL
, I
I/O
= 0mA
- 55
Other pins at V
IL
or V
IH
Average Operating
- 70
Power supply Current
Cycle time = 1µs
I
CC1
CE# = 0.2V , I
I/O
= 0mA
Other pins at 0.2V or V
CC
- 0.2V
-SL
Standby Power
CE#
V
CC
- 0.2V
I
SB1
Supply Current
Others at 0.2V or V
CC
- 0.2V -LL
Notes:
1. V
IH
(max) = V
CC
+ 3.0V for pulse width less than 10ns.
2. V
IL
(min) = V
SS
- 3.0V for pulse width less than 10ns.
3. Over/Undershoot specifications are characterized, not 100% tested.
4. Typical values are included for reference only and are not guaranteed or tested.
Typical valued are measured at V
CC
= V
CC
(TYP.) and T
A
= 25℃
MIN.
4.5
2.4
- 0.2
-1
-1
2.4
-
-
-
-
-
-
-
TYP.
5.0
-
-
-
-
-
-
50
40
30
4
3
3
*4
MAX.
5.5
V
CC
+0.3
0.6
1
1
-
0.4
80
60
50
10
25
50
UNIT
V
V
V
µA
µA
V
V
mA
mA
mA
mA
µA
µA
CAPACITANCE
(T
A
= 25
, f = 1.0MHz)
PARAMETER
Input Capacitance
Input/Output Capacitance
SYMBOL
C
IN
C
I/O
MIN.
-
-
MAX
6
8
UNIT
pF
pF
Note : These parameters are guaranteed by device characterization, but not production tested.
Lyontek Inc.
reserves the rights to change the specifications and products without notice.
40 Hsuch-Fu Rd., Hsinchu, Taiwan.
TEL: 886-3-5165511
FAX: 886-3-5165522
4
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