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MX1N6508: 产品描述Trans Voltage Suppressor Diode, 60V V(RWM), Unidirectional, 16 Element, Silicon, HERMETIC SEALED, CERAMIC, DIP-14; 产品类别分立半导体二极管; 文件大小80KB，共2页; 制造商Microsemi; 官网地址https://www.microsemi.com

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MX1N6508概述

Trans Voltage Suppressor Diode, 60V V(RWM), Unidirectional, 16 Element, Silicon, HERMETIC SEALED, CERAMIC, DIP-14

MX1N6508规格参数

参数名称	属性值
是否Rohs认证	不符合
厂商名称	Microsemi
零件包装代码	DIP
包装说明	R-CDIP-T14
针数	14
Reach Compliance Code	compliant
ECCN代码	EAR99
Is Samacsys	N
其他特性	HIGH RELIABILITY, LOW CAPACITANCE
最小击穿电压	60 V
配置	COMPLEX
二极管元件材料	SILICON
二极管类型	TRANS VOLTAGE SUPPRESSOR DIODE
最大正向电压 (VF)	1 V
JESD-30 代码	R-CDIP-T14
JESD-609代码	e0
元件数量	16
端子数量	14
最高工作温度	150 °C
最低工作温度	-65 °C
封装主体材料	CERAMIC, METAL-SEALED COFIRED
封装形状	RECTANGULAR
封装形式	IN-LINE
峰值回流温度（摄氏度）	NOT SPECIFIED
极性	UNIDIRECTIONAL
最大功率耗散	0.6 W
认证状态	Not Qualified
最大重复峰值反向电压	60 V
最大反向电流	0.1 µA
最大反向恢复时间	0.02 µs
反向测试电压	40 V
表面贴装	NO
技术	AVALANCHE
端子面层	TIN LEAD
端子形式	THROUGH-HOLE
端子位置	DUAL
处于峰值回流温度下的最长时间	NOT SPECIFIED
Base Number Matches	1

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1N6508

Isolated Diode Array with

HiRel MQ, MX, MV, and MSP Screening Options

SCOTTSDALE DIVISION

DESCRIPTION

These low capacitance diode arrays are multiple, discrete, isolated junctions fabricated

by a planar process and mounted in a 14-PIN ceramic DIP package for use as steering

diodes protecting up to eight I/O ports from ESD, EFT, or surge by directing them to the

positive side of the power supply line and to ground (see Figure 1). An external TVS

diode may be added between the positive supply line and ground to prevent over-

voltage on the supply rail. They may also be used in fast switching core-driver

applications. This includes computers and peripheral equipment such as magnetic

cores, thin-film memories, plated-wire memories, etc., as well as decoding or encoding

applications. These arrays offer many advantages of integrated circuits such as high-

density packaging and improved reliability. This is a result of fewer pick and place

operations, smaller footprint, smaller weight, and elimination of various discrete

packages that may not be as user friendly in PC board mounting.

IMPORTANT:

For the most current data, consult

MICROSEMI’s

website:

http://www.microsemi.com

APPEARANCE

WWW .

Microsemi

14-PIN Ceramic DIP

FEATURES

•

Hermetic Ceramic Package

Isolated Diodes to Eliminate Cross-Talk Voltages

High Breakdown Voltage V

> 60 V at 10

μA

Low Leakage I

< 100nA at 40 V

Low Capacitance C < 8.0 pF

Switching Speeds less than 20 ns

Options for screening in accordance with MIL-PRF-

19500/474 for JAN, JANTX, JANTXV, and JANS are

available by adding MQ, MX, MV, or MSP prefixes

respectively to part numbers. For example, designate

MX1N6508 for a JANTX screen.

•

APPLICATIONS / BENEFITS

High Frequency Data Lines

RS-232 & RS-422 Interface Networks

Ethernet: 10 Base T

Computer I/O Ports

LAN

Switching Core Drivers

IEC 61000-4 Compatible (see circuit in figure 1)

61000-4-2 ESD: Air 15 kV, contact 8 kW

61000-4-4 (EFT): 40 A – 5/50 ns

61000-4-5 (surge): 12 A 8/20

μs

MAXIMUM RATINGS

•

Reverse Breakdown Voltage of 60 Vdc (Note 1 & 2)

Continuous Forward Current of 300 mA dc (Note 1 & 3)

Peak Surge Current (tp=1/120 s) of 500 mA dc (Note 1)

400 mW Power Dissipation per Junction @ 25 C

600 mW Power Dissipation per Package @ 25

C (Note 4)

Operating Junction Temperature range –65 to +150

Storage Temperature range of –65 to +200 C

NOTE 1:

NOTE 2:

NOTE 3:

NOTE 4:

Each Diode

Pulsed: P

= 100 ms max; duty cycle <20%

Derate at 2.4 mA/ C above +25 C

Derate at 4.8 mW/ C above +25 C

MECHANICAL AND PACKAGING

•

14-PIN Ceramic DIP

Weight 2.05 grams (approximate)

Marking: Logo, part number, date code

Pin #1 to the left of the indent on top of package

Carrier Tubes; 25 pcs (standard)

ELECTRICAL CHARACTERISTICS (Per Diode) @ 25

C unless otherwise specified

MAXIMUM

FORWARD

VOLTAGE

= 100 mA

(Note 1)

MAXIMUM

FORWARD

VOLTAGE

= 500 mA

(Note 1)

MAXIMUM

REVERSE

CURRENT

= 40 V

μA

MAXIMUM

CAPACITANCE

(PIN TO PIN)

MAXIMUM

FORWARD

RECOVERY TIME

= 500 mA

MAXIMUM

REVERSE

RECOVERY TIME

trr

= 200 mA

= 20 mA

= 100 ohms

1N6508

= 0 V

F = 1 MHz

PART

NUMBER

1N6508

2005

6-9-2005 REV B

1.7

0.1

8.0

NOTE 1:

Pulsed: P

= 300 us +/- 50 µs, duty cycle <2%, 90 µs after leading edge.

Microsemi

Scottsdale Division

8700 E. Thomas Rd. PO Box 1390, Scottsdale, AZ 85252 USA, (480) 941-6300, Fax: (480) 947-1503

Page 1

MX1N6508相似产品对比

	MX1N6508	MQ1N6508	MV1N6508	MSP1N6508	RG1P-2083-AT201	PAC50002701FAC0
描述	Trans Voltage Suppressor Diode, 60V V(RWM), Unidirectional, 16 Element, Silicon, HERMETIC SEALED, CERAMIC, DIP-14	Trans Voltage Suppressor Diode, Unidirectional, 16 Element, Silicon, HERMETIC SEALED, CERAMIC, DIP-14	Trans Voltage Suppressor Diode, Unidirectional, 16 Element, Silicon, HERMETIC SEALED, CERAMIC, DIP-14	Trans Voltage Suppressor Diode, Unidirectional, 16 Element, Silicon, HERMETIC SEALED, CERAMIC, DIP-14	Fixed Resistor, Metal Glaze/thick Film, 1W, 208000ohm, 2000V, 0.05% +/-Tol, 200ppm/Cel,	RESISTOR, WIRE WOUND, 5 W, 1 %, 100 ppm, 2700 ohm, THROUGH HOLE MOUNT, AXIAL LEADED, ROHS COMPLIANT
Reach Compliance Code	compliant	unknow	unknow	unknow	compliant	unknown
ECCN代码	EAR99	EAR99	EAR99	EAR99	EAR99	EAR99
端子数量	14	14	14	14	2	2
最高工作温度	150 °C	150 °C	150 °C	150 °C	155 °C	275 °C
封装形状	RECTANGULAR	RECTANGULAR	RECTANGULAR	RECTANGULAR	CYLINDRICAL PACKAGE	TUBULAR PACKAGE
技术	AVALANCHE	AVALANCHE	AVALANCHE	AVALANCHE	METAL GLAZE/THICK FILM	WIRE WOUND
是否Rohs认证	不符合	不符合	不符合	不符合	-	符合
零件包装代码	DIP	DIP	DIP	DIP	-	-
包装说明	R-CDIP-T14	R-CDIP-T14	R-CDIP-T14	R-CDIP-T14	-	,
针数	14	14	14	14	-	-
其他特性	HIGH RELIABILITY, LOW CAPACITANCE	HIGH RELIABILITY, LOW CAPACITANCE	HIGH RELIABILITY, LOW CAPACITANCE	HIGH RELIABILITY, LOW CAPACITANCE	-	PRECISION
最小击穿电压	60 V	60 V	60 V	60 V	-	-
配置	COMPLEX	COMPLEX	COMPLEX	COMPLEX	-	-
二极管元件材料	SILICON	SILICON	SILICON	SILICON	-	-
二极管类型	TRANS VOLTAGE SUPPRESSOR DIODE	TRANS VOLTAGE SUPPRESSOR DIODE	TRANS VOLTAGE SUPPRESSOR DIODE	TRANS VOLTAGE SUPPRESSOR DIODE	-	-
JESD-30 代码	R-CDIP-T14	R-CDIP-T14	R-CDIP-T14	R-CDIP-T14	-	-
JESD-609代码	e0	e0	e0	e0	-	e3
元件数量	16	16	16	16	-	-
最低工作温度	-65 °C	-65 °C	-65 °C	-65 °C	-55 °C	-
封装主体材料	CERAMIC, METAL-SEALED COFIRED	CERAMIC, METAL-SEALED COFIRED	CERAMIC, METAL-SEALED COFIRED	CERAMIC, METAL-SEALED COFIRED	-	-
封装形式	IN-LINE	IN-LINE	IN-LINE	IN-LINE	Axial	-
峰值回流温度（摄氏度）	NOT SPECIFIED	NOT SPECIFIED	NOT SPECIFIED	NOT SPECIFIED	-	-
极性	UNIDIRECTIONAL	UNIDIRECTIONAL	UNIDIRECTIONAL	UNIDIRECTIONAL	-	-
最大功率耗散	0.6 W	0.6 W	0.6 W	0.6 W	-	-
认证状态	Not Qualified	Not Qualified	Not Qualified	Not Qualified	-	-
表面贴装	NO	NO	NO	NO	-	NO
端子面层	TIN LEAD	TIN LEAD	TIN LEAD	TIN LEAD	-	Matte Tin (Sn)
端子形式	THROUGH-HOLE	THROUGH-HOLE	THROUGH-HOLE	THROUGH-HOLE	-	-
端子位置	DUAL	DUAL	DUAL	DUAL	-	-
处于峰值回流温度下的最长时间	NOT SPECIFIED	NOT SPECIFIED	NOT SPECIFIED	NOT SPECIFIED	-	-
Base Number Matches	1	1	1	1	-	-

MX1N6508

MX1N6508概述

MX1N6508规格参数

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MX1N6508相似产品对比

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