MJD127(PNP)
TO-252-2L Transistor
1. BASE
2. COLLECTOR
3 .EMITTER
TO-252-2L
Features
High DC current gain
Electrically similar to popular TIP127
Built-in a damper diode at E-C
MAXIMUM RATINGS (T
A
=25℃ unless otherwise noted)
Symbol
V
CBO
V
CEO
V
EBO
I
C
P
C
T
J
T
stg
Parameter
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current -Continuous
Collector Power Dissipation
Junction Temperature
Storage Temperature
Value
-100
-100
-5
-8
1.5
150
-55-150
Units
V
V
V
A
W
℃
℃
Dimensions in inches and (millimeters)
ELECTRICAL CHARACTERISTICS (Tamb=25℃ unless otherwise specified)
Parameter
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cut-off current
Collector-emitter cut-off current
Emitter cut-off current
DC current gain
Symbol
V
(BR)CBO
V
(BR)CEO
V
(BR)EBO
I
CBO
I
CEX
I
EBO
h
FE(1)
h
FE(2)
Collector-emitter saturation voltage
Base-emitter saturation voltage
Base-emitter voltage
Collector output capacitance
V
CE(sat) 1*
V
CE(sat) 2
V
BE(sat)
V
BE
*
*
Test
conditions
MIN
-100
-100
-5
TYP
MAX
UNIT
V
V
V
I
C
=-1mA,I
E
=0
I
C
=-30mA,I
B
=0
I
E
=-1mA,I
C
=0
V
CB
=-100V,I
E
=0
V
CE
=-100V,V
BE(off)
=-1.5V
V
EB
=-5V,I
C
=0
V
CE
=-4V,I
C
=-4A
V
CE
=-4V,I
C
=-8A
I
C
=-4A,I
B
=-16mA
I
C
=-8A,I
B
=-80mA
I
C
=-8A,I
B
=-80mA
V
CE
=-4V,I
C
=-4A
V
CB
=-10V,I
E
=0,f=0.1MHz
-10
-10
-2
1000
100
-2
-4
-4.5
-2.8
300
12000
µA
µA
mA
V
V
V
V
pF
*
C
ob
*Pulse
Test: Pulse Width≤380µs, Duty Cycle≤2%
Revision:20170701-P1
ht
t
p
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