电子工程世界电子工程世界电子工程世界

关键词

搜索

型号

搜索

1N4004G-TB-LF

产品描述Rectifier Diode, 1 Element, 1A, 400V V(RRM), Silicon, DO-41, ROHS COMPLIANT, PLASTIC PACKAGE-2
产品类别分立半导体    二极管   
文件大小60KB,共4页
制造商Won-Top Electronics Co., Ltd.
官网地址https://www.wontop.com/
标准
下载文档 详细参数 全文预览

1N4004G-TB-LF概述

Rectifier Diode, 1 Element, 1A, 400V V(RRM), Silicon, DO-41, ROHS COMPLIANT, PLASTIC PACKAGE-2

1N4004G-TB-LF规格参数

参数名称属性值
是否无铅不含铅
是否Rohs认证符合
厂商名称Won-Top Electronics Co., Ltd.
零件包装代码DO-41
包装说明O-PALF-W2
针数2
Reach Compliance Codecompliant
ECCN代码EAR99
Is SamacsysN
其他特性HIGH RELIABILITY
外壳连接ISOLATED
配置SINGLE
二极管元件材料SILICON
二极管类型RECTIFIER DIODE
JEDEC-95代码DO-41
JESD-30 代码O-PALF-W2
湿度敏感等级2
元件数量1
端子数量2
最高工作温度175 °C
最低工作温度-65 °C
最大输出电流1 A
封装主体材料PLASTIC/EPOXY
封装形状ROUND
封装形式LONG FORM
峰值回流温度(摄氏度)260
最大重复峰值反向电压400 V
表面贴装NO
端子形式WIRE
端子位置AXIAL
处于峰值回流温度下的最长时间NOT SPECIFIED
Base Number Matches1

文档预览

下载PDF文档
WTE
POWER SEMICONDUCTORS
1N4001G – 1N4007G
Pb
1.0A GLASS PASSIVATED STANDARD DIODE
Features
!
!
!
!
!
Glass Passivated Die Construction
Low Forward Voltage Drop
High Current Capability
High Reliability
High Surge Current Capability
A
B
A
Mechanical Data
!
!
!
!
!
!
!
Case: DO-41, Molded Plastic
Terminals: Plated Leads Solderable per
MIL-STD-202, Method 208
Polarity: Cathode Band
Weight: 0.35 grams (approx.)
Mounting Position: Any
Marking: Type Number
Lead Free: For RoHS / Lead Free Version,
Add “-LF” Suffix to Part Number, See Page 4
D
DO-41
Dim
Min
Max
25.4
A
4.06
5.21
B
0.71
0.864
C
2.00
2.72
D
All Dimensions in mm
C
Maximum Ratings and Electrical Characteristics
Single Phase, half wave, 60Hz, resistive or inductive load.
For capacitive load, derate current by 20%.
1N
4001G
50
35
@T
A
=25°C unless otherwise specified
Characteristic
Peak Repetitive Reverse Voltage
Working Peak Reverse Voltage
DC Blocking Voltage
RMS Reverse Voltage
Average Rectified Output Current
(Note 1)
@T
A
= 75°C
Non-Repetitive Peak Forward Surge Current
8.3ms Single half sine-wave superimposed on
rated load (JEDEC Method)
Forward Voltage
Peak Reverse Current
At Rated DC Blocking Voltage
@I
F
= 1.0A
@T
A
= 25°C
@T
A
= 100°C
Symbol
V
RRM
V
RWM
V
R
V
R(RMS)
I
O
1N
4002G
100
70
1N
4003G
200
140
1N
4004G
400
280
1.0
1N
4005G
600
420
1N
4006G
800
560
1N
4007G
1000
700
Unit
V
V
A
I
FSM
V
FM
I
RM
C
j
R
JA
T
j
T
STG
30
1.0
5.0
50
8.0
50
-65 to +175
-65 to +175
A
V
µA
pF
°C/W
°C
°C
Typical Junction Capacitance (Note 2)
Typical Thermal Resistance Junction to Ambient
(Note 1)
Operating Temperature Range
Storage Temperature Range
Note: 1. Leads maintained at ambient temperature at a distance of 9.5mm from the case
2. Measured at 1.0 MHz and Applied Reverse Voltage of 4.0V D.C.
1N4001G – 1N4007G
1 of 4
© 2006 Won-Top Electronics

 
EEWorld订阅号

 
EEWorld服务号

 
汽车开发圈

 
机器人开发圈

About Us 关于我们 客户服务 联系方式 器件索引 网站地图 最新更新 手机版

站点相关: 大学堂 TI培训 Datasheet 电子工程 索引文件: 257  720  395  1266  373  11  25  33  49  58 

器件索引   0 1 2 3 4 5 6 7 8 9 A B C D E F G H I J K L M N O P Q R S T U V W X Y Z

北京市海淀区中关村大街18号B座15层1530室 电话:(010)82350740 邮编:100190

电子工程世界版权所有 京B2-20211791 京ICP备10001474号-1 电信业务审批[2006]字第258号函 京公网安备 11010802033920号 Copyright © 2005-2026 EEWORLD.com.cn, Inc. All rights reserved