PRELIMINARY
MX29LV800T/B & MX29LV800AT/AB
8M-BIT [1Mx8/512K x16] CMOS SINGLE VOLTAGE
3V ONLY FLASH MEMORY
• Ready/Busy pin (RY/BY)
- Provides a hardware method of detecting program or
erase operation completion.
• Sector protection
- Hardware method to disable any combination of
sectors from program or erase operations
- Temporary sector unprotect allows code changes in
previously locked sectors.
• CFI (Common Flash Interface) compliant (for
MX29LV800AT/AB)
- Flash device parameters stored on the device and
provide the host system to access
• 100,000 minimum erase/program cycles
• Latch-up protected to 100mA from -1V to VCC+1V
• Boot Sector Architecture
- T = Top Boot Sector
- B = Bottom Boot Sector
• Package type:
- 44-pin SOP
- 48-pin TSOP
- 48-pin CSP (8x9mm for MX29LV800T/B; 6x8mm for
MX29LV800AT/AB)
• Compatibility with JEDEC standard
- Pinout and software compatible with single-power
supply Flash
• 20 years data retention
ister allows for 100% TTL level control inputs and fixed
power supply levels during erase and programming, while
maintaining maximum EPROM compatibility.
MXIC Flash technology reliably stores memory contents
even after 100,000 erase and program cycles. The MXIC
cell is designed to optimize the erase and programming
mechanisms. In addition, the combination of advanced
tunnel oxide processing and low internal electric fields
for erase and program operations produces reliable cy-
cling. The MX29LV800T/B & MX29LV800AT/AB uses a
2.7V~3.6V VCC supply to perform the High Reliability
Erase and auto Program/Erase algorithms.
The highest degree of latch-up protection is achieved
with MXIC's proprietary non-epi process. Latch-up pro-
tection is proved for stresses up to 100 milliamps on
address and data pin from -1V to VCC + 1V.
Part Name
Difference
MX29LV800T/B
1.Without CFI compliant
2. CSP dimension:8x9mm
MX29LV800AT/AB 1.With CFI compliant
2. CSP dimension:6x8mm
REV. 1.7, MAY 31, 2002
FEATURES
• Extended single - supply voltage range 2.7V to 3.6V
• 1,048,576 x 8/524,288 x 16 switchable
• Single power supply operation
- 3.0V only operation for read, erase and program
operation
• Fast access time: 70/90ns
• Low power consumption
- 20mA maximum active current
- 0.2uA typical standby current
• Command register architecture
- Byte/word Programming (9us/11us typical)
- Sector Erase (Sector structure 16K-Bytex1,
8K-Bytex2, 32K-Bytex1, and 64K-Byte x15)
• Auto Erase (chip & sector) and Auto Program
- Automatically erase any combination of sectors with
Erase Suspend capability.
- Automatically program and verify data at specified
address
• Erase suspend/Erase Resume
- Suspends sector erase operation to read data from,
or program data to, any sector that is not being erased,
then resumes the erase.
• Status Reply
- Data polling & Toggle bit for detection of program and
erase operation completion.
GENERAL DESCRIPTION
The MX29LV800T/B & MX29LV800AT/AB is a 8-mega
bit Flash memory organized as 1M bytes of 8 bits or
512K words of 16 bits. MXIC's Flash memories offer
the most cost-effective and reliable read/write non-vola-
tile random access memory. The MX29LV800T/B &
MX29LV800AT/AB is packaged in 44-pin SOP, 48-pin
TSOP, and 48-ball CSP. It is designed to be repro-
grammed and erased in system or in standard EPROM
programmers.
The standard MX29LV800T/B & MX29LV800AT/AB of-
fers access time as fast as 70ns, allowing operation of
high-speed microprocessors without wait states. To elimi-
nate bus contention, the MX29LV800T/B &
MX29LV800AT/AB has separate chip enable (CE) and
output enable (OE) controls.
MXIC's Flash memories augment EPROM functionality
with in-circuit electrical erasure and programming. The
MX29LV800T/B & MX29LV800AT/AB uses a command
register to manage this functionality. The command reg-
P/N:PM0709
1
嵌入式系统
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